Common Base (CB), Common Emitter (CE), and Common Collector (CC) Configurations in

BJT
BJT (Bipolar Junction Transistor) can be connected in three different configurations:
1. Common Base (CB)
2. Common Emitter (CE)
3. Common Collector (CC)
Each configuration determines the input and output impedance, voltage/current gain, and
applications.

1. Common Base (CB) Configuration

What is it?
• The base terminal is common to both the input and output circuits.
• Input is applied between emitter and base (VEB).
• Output is taken from collector and base (VCB).
Input Characteristics
• Shows the relationship between emitter current (IE) and emitter-base voltage (VEB)
for a fixed collector-base voltage (VCB).Low input impedance (50Ω - 500Ω).
Output Characteristics
• Relationship between collector current (ICI_CIC) and collector-base voltage
(VCBV_{CB}VCB) for different values of emitter current (IEI_EIE).
• High output impedance (100kΩ - 1MΩ).
Regions of Operation
• Active Region: Used for voltage amplification.
• Saturation: Both junctions forward biased (ON state).
• Cutoff: Both junctions reverse biased (OFF state).
Signal Amplification
• Voltage gain is high (greater than 1).
• Current gain is less than 1 (α = IC/IE ≈ 0.95 to 0.99).
• Used in RF amplifiers and high-frequency applications.

2. Common Emitter (CE) Configuration

What is it?
• The emitter terminal is common to both input and output circuits.
• Input is applied between base and emitter (VBE).
• Output is taken from collector and emitter (VCE).
Input Characteristics
• Relationship between base current (IBI_BIB) and base-emitter voltage
(VBEV_{BE}VBE) for fixed collector-emitter voltage (VCEV_{CE}VCE).Medium input
impedance (600Ω - 1kΩ).
Output Characteristics
• Relationship between collector current (ICI_CIC) and collector-emitter voltage
(VCEV_{CE}VCE) for different values of base current (IBI_BIB).High output
impedance (10kΩ - 50kΩ).
Regions of Operation
• Active Region: Used for signal amplification.
• Saturation: Both junctions forward biased (fully ON).
• Cutoff: Both junctions reverse biased (fully OFF).
Signal Amplification
• High voltage gain and high power gain.
• High current gain (β = IC / IB, typically 20 - 500).
• Most commonly used configuration in audio amplifiers, signal processing, and
switching circuits.

3. Common Collector (CC) Configuration

What is it?
• The collector terminal is common to both input and output circuits.
• Input is applied between base and collector (VBC).
• Output is taken from emitter and collector (VEC).
Input Characteristics
• Relationship between base current (IBI_BIB) and base-collector voltage
(VBCV_{BC}VBC) for fixed emitter-collector voltage (VECV_{EC}VEC).Very high input
impedance (10kΩ - 100kΩ).
Output Characteristics
 • Relationship between emitter current (IEI_EIE) and emitter-collector voltage
(VECV_{EC}VEC) for different values of base current (IBI_BIB).Low output
impedance (50Ω - 500Ω).
Regions of Operation
• Active Region: Used as a voltage buffer.
• Saturation: Both junctions forward biased.
• Cutoff: Both junctions reverse biased.
Signal Amplification
• No voltage gain (≈ 1) but high current gain (β).
• Used for impedance matching and buffering in circuits.

Comparison Table

Input Output Voltage Current Power

Configuration Application
Impedance Impedance Gain Gain Gain

RF amplifiers,
Common Base High Low
Low High Medium High-frequency
(CB) (>1) (<1)
circuits

Signal
Common Very
Medium High High High amplification,
Emitter (CE) High
Switching circuits

Impedance
Common
High Low ≈1 High Medium matching, Buffer
Collector (CC)
circuits

Conclusion
• CB is used for high-frequency applications.
• CE is the most widely used because of high gain.
• CC is used for buffering and impedance matching.
Junction Field Effect Transistor (JFET) – 16 Marks Answer
A Junction Field Effect Transistor (JFET) is a voltage-controlled semiconductor device used in
amplification and switching. It regulates current flow using an electric field applied at the
Gate terminal.

1. Construction of JFET
• The JFET consists of a semiconductor channel (either N-type or P-type) through
which current flows.
• The Gate (G) is formed by two heavily doped regions, creating a PN junction with the
channel.
• The Source (S) and Drain (D) are terminals at opposite ends of the channel.
N-Channel JFET Construction
1. Channel: A thin N-type semiconductor is sandwiched between two heavily doped P-
type regions.
2. Terminals: The Drain (D) is connected to positive voltage (V_DD), and the Source (S)
is grounded.
3. Gate (G) Control: A negative voltage is applied at the Gate (G) to control current
flow.
P-Channel JFET Construction
1. Channel: A P-type semiconductor is used, with two N-type Gate regions.
2. Voltage Polarities: The Drain is connected to a negative voltage, and the Source is at
a higher potential.
3. Gate Control: A positive voltage is applied to reduce current flow.

2. Source, Drain, and Gate Functions

Source (S)
1. Supplies charge carriers for current flow (electrons in N-channel, holes in P-channel).
2. Connected to ground or the lowest potential in most circuits.
3. Acts as the starting point for electron or hole movement.
Drain (D)
1. Collects the charge carriers from the Source.
2. Current (I_D) flows from Drain to Source in an N-channel JFET.
 3. Higher voltage is applied to the Drain to maintain current flow.
Gate (G)
1. Controls the width of the conductive channel by varying the depletion region.
2. Reverse-biased to limit current flow, increasing resistance.
3. High input impedance, meaning very little current flows into the Gate.

3. Operation of N-Channel JFET

The working of an N-channel JFET depends on the Gate-to-Source Voltage (V_GS).
1. When V_GS = 0V:
o The channel is fully open, allowing maximum current (I_DSS) to flow.
o The JFET acts like a low-resistance path (Ohmic region).
2. When V_GS is negative:
o The depletion region expands, reducing the channel width.
o Drain current (I_D) decreases as resistance increases.
3. When V_GS = V_P (Pinch-Off Voltage):
o The channel is completely closed, and I_D ≈ 0 (cutoff condition).
o The JFET acts as an open switch.

4. Ohmic Region (Linear Region)

• The JFET behaves like a resistor, where I_D increases linearly with V_DS.
• V_GS is small, so the depletion region has little effect.
• Used in voltage-controlled resistors and amplifiers.

5. Pinch-Off Region (Active Region)

• As V_GS becomes more negative, the depletion region expands, narrowing the
channel.
• When V_GS reaches the pinch-off voltage (V_P), the channel is nearly closed.
• Drain current (I_D) becomes constant, independent of V_DS.
• This region is used for JFET amplifiers.
6. Breakdown Region
• When V_DS exceeds the breakdown voltage (V_BR), avalanche breakdown occurs.
• This leads to uncontrolled current flow, possibly damaging the JFET.
• This region must be avoided in normal operation.

7. Advantages and Disadvantages of JFET

Advantages
1. High Input Impedance → Reduces power loss, making it ideal for amplifiers.
2. Low Noise Operation → Suitable for sensitive signal applications like RF and audio.
3. Low Power Consumption → Efficient in battery-powered devices.

Disadvantages
1. Low Voltage Gain → Not as efficient as BJTs for high-power applications.
2. Limited Frequency Response → Not ideal for high-frequency switching.
3. Requires Careful Handling → Excessive voltage can damage the device.

8. JFET Characteristics Parameters

1. Drain Resistance (r_d): Small-signal resistance in the active region.
2. Transconductance (g_m): Change in I_D with respect to V_GS.
3. Amplification Factor (μ): Ratio of change in V_DS to change in V_GS.
4. Input Impedance: JFET has very high input impedance, reducing power loss.

Conclusion
• JFETs are widely used in amplifiers, oscillators, and signal processing due to their
high input impedance and low noise characteristics.
• Their operation is controlled by V_GS, which regulates current flow from Drain to
Source.
• Proper biasing and voltage control are essential for effective JFET applications.
N-Channel MOSFET: Enhancement Mode & Depletion Mode (16 Marks)
Introduction
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a three-terminal
semiconductor device used for switching and amplification. It has two major types:
1. Enhancement Mode MOSFET
2. Depletion Mode MOSFET
Both types exist in N-Channel and P-Channel variations. This discussion focuses on N-
Channel MOSFETs, where electrons are the primary charge carriers.

1. N-Channel Enhancement Mode MOSFET

Construction
• The substrate (body) is made of P-type semiconductor.
• The Source (S) and Drain (D) terminals are made of N-type regions.
• A thin layer of Silicon Dioxide (SiO₂) insulates the Gate (G) terminal from the
substrate.
• There is no conducting channel between source and drain by default.
Working Principle
The N-Channel Enhancement MOSFET requires a positive gate-to-source voltage (V_GS) to
create a conductive channel between Drain and Source.
• Cut-off Region (V_GS = 0V or Negative):
o No conductive path exists.
o Drain current (IDI_D) is zero.
• Threshold Condition (V_GS = V_th):
o A small positive voltage at the gate attracts free electrons from the P-type
substrate.
o A thin conductive layer of electrons starts forming.
• Saturation Region (V_GS > V_th):
o More electrons accumulate, forming a strong conductive channel.
o Current (IDI_D) flows from Drain to Source when a voltage (VDSV_{DS}) is
applied.
Drain Current Equation
In the saturation region, the current follows the equation:
ID=12μnCoxWL(VGS−Vth)2I_D = \frac{1}{2} \mu_n C_{ox} \frac{W}{L} (V_{GS} - V_{th})^2
where,
• IDI_D = Drain Current
• VGSV_{GS} = Gate-Source Voltage
• VthV_{th} = Threshold Voltage
• W/LW/L = Width-to-Length Ratio of MOSFET Channel
• μn\mu_n = Electron Mobility
• CoxC_{ox} = Oxide Capacitance
Characteristics of N-Channel Enhancement MOSFET
• High input impedance due to the insulating oxide layer.
• Low power consumption because it only requires a voltage at the gate.
• Requires positive V_GS to turn ON.
• No drain current when V_GS = 0V (Normally OFF MOSFET).
Applications
• Used in microprocessors and digital circuits (CMOS technology).
• Power electronics (DC-DC converters, motor drivers).
• Used in Switching and Amplification in high-speed circuits.

2. N-Channel Depletion Mode MOSFET

Construction
• Similar to the Enhancement MOSFET, but it has a pre-built conductive channel
between the source and drain even when V_GS = 0V.
• The channel is already formed during manufacturing using N-type doping.
Working Principle
Unlike Enhancement MOSFETs, Depletion Mode MOSFETs are normally ON and require a
negative gate-to-source voltage (V_GS) to turn OFF the current flow.
• When V_GS = 0V:
o The MOSFET is ON by default, and current flows.
• When V_GS is Negative:
 o The negative voltage at the gate repels electrons from the channel, reducing
the conductive path.
o At a sufficiently large negative voltage, the channel gets depleted, and the
MOSFET turns OFF.
• When V_GS is Positive:
o More electrons are attracted to the channel, increasing the current (IDI_D).
Drain Current Equation
ID=IDSS(1−VGSVP)2I_D = I_{DSS} \left( 1 - \frac{V_{GS}}{V_P} \right)^2
where,
• IDI_D = Drain Current
• IDSSI_{DSS} = Maximum Drain Current (at V_GS = 0V)
• VPV_P = Pinch-off Voltage (Voltage at which the channel completely depletes and
turns OFF)
Characteristics of N-Channel Depletion MOSFET
• Normally ON at V_GS = 0V.
• Turns OFF when a negative V_GS is applied.
• Can operate in both enhancement and depletion modes.
• Higher conduction losses compared to enhancement MOSFETs.
Applications
• Used in analog circuits and amplifiers due to its ability to operate with zero gate
voltage.
• Used in voltage regulators and RF amplifiers.
• Less common in modern digital circuits compared to enhancement MOSFETs.

Comparison: Enhancement vs. Depletion Mode MOSFET

N-Channel Enhancement
Feature N-Channel Depletion MOSFET
MOSFET

Default State (V_GS

OFF ON
= 0V)

Conduction Requires positive V_GS to Channel already exists, V_GS must be

Mechanism create a channel negative to turn OFF
 N-Channel Enhancement
Feature N-Channel Depletion MOSFET
MOSFET

Control Voltage applied to turn ON Voltage applied to turn OFF

Digital circuits, power Analog applications, signal

Usage
electronics amplification

Power Consumption Low (only during switching) Higher (always ON unless turned OFF)

Requires additional gate drive

Complexity Simpler to use in certain cases
circuitry

Conclusion
• N-Channel Enhancement MOSFETs are normally OFF and require a positive V_GS to
turn ON, making them ideal for digital circuits and power electronics.
• N-Channel Depletion MOSFETs are normally ON and turn OFF with a negative V_GS,
making them useful in analog applications like amplifiers and voltage regulators.
• Both types have specific applications, but Enhancement MOSFETs are more widely
used in modern electronics due to their better efficiency and ease of control.