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PHYS 347 Week 3 2023 - 2024

The document provides an overview of bipolar junction transistors (BJTs), including their construction, operation modes, biasing, and current-voltage characteristics. It discusses NPN and PNP BJTs, as well as common emitter configurations and circuits such as voltage divider bias.

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25 views25 pages

PHYS 347 Week 3 2023 - 2024

The document provides an overview of bipolar junction transistors (BJTs), including their construction, operation modes, biasing, and current-voltage characteristics. It discusses NPN and PNP BJTs, as well as common emitter configurations and circuits such as voltage divider bias.

Uploaded by

danyalhamzah
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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LECTURE NOTES

PHYS 347 ELECTRONICS I


2023/2024
PHYS 347 Electronics I
Bipolar junction transistors (BJTs)

Transistor provide the power gain that is needed for


most electronic applications.

They also can provide voltage gain and current gain.


There are several important types of transistors. For
now we will consider the bipolar junction transistor
(BJT).
PHYS 347 Electronics I
Bipolar junction transistors (BJTs)
PHYS 347 Electronics I
Bipolar junction transistors (BJTs)
Construction of Bipolar junction transistors

Emitter-base Base region


junction (very narrow)

Emitter region Collector

Collector region
Emitter

Base Collector-base
junction
PHYS 347 Electronics I
Bipolar junction transistors (BJTs)
Construction of Bipolar junction transistors

NPN BJT shown


• 3 terminals: emitter, base, and collector
• 2 junctions: emitter-base junction (EBJ) and collector-base
junction (CBJ)
– These junctions have capacitance (high-frequency model)
• BJTs are not symmetric devices
– doping and physical dimensions are different for emitter
and collector
PHYS 347 Electronics I
Standard bipolar junction transistor symbols

Depending on the biasing across each of the junctions, different


modes of operation are obtained – cutoff, active and saturation
PHYS 347 Electronics I
BJT in Active Mode

Two external voltage sources set the bias conditions for active
mode
– EBJ is forward biased and CBJ is reverse biased
PHYS 347 Electronics I
BJT in Active Mode

Forward bias of EBJ injects electrons from emitter into base


(small number of holes injected from base into emitter)
PHYS 347 Electronics I
BJT biasing

For normal operation, the base-emitter junction is


forward-biased and the base collector junction is reverse-
biased.

For the npn transistor, this


BC reverse-
condition requires that
biased
the base is more positive +
than the emitter and the + npn
collector is more positive BE
than the base. forward-
biased
Assume VBE = 0.7V
PHYS 347 Electronics I

BJT biasing

Assume VBE = 0.7V

For the pnp transistor, this


condition requires that the
base is more negative than BC reverse-
the emitter and the biased
collector is more negative pnp +
than the base. + BE
forward-
biased
PHYS 347 Electronics I
BJT currents

A small base current (IB) is able to control a larger collector


current (IC). Some important current relationships for a BJT
are:
IE  IC  IB IC
I
I C  αDC I E IB
I

I C  βDC I B IE
I

IC
Beta:   ---common-emitter current gain
IB
PHYS 347 Electronics I
C-E Circuits I-V Characteristics
Base-emitter Characteristic
(Input characteristic)
i B  f (v BE ) vCE  C
PHYS 347 Electronics I
C-E Circuits I-V Characteristics
Collector characteristic
(output characteristic)

iC  f (VCE ) iB C

iB = 40 μA
PHYS 347 Electronics I
C-E Circuits I-V Characteristics
Collector characteristic (output characteristic)
iC  f (VCE ) iB C
PHYS 347 Electronics I
C-E Circuits I-V Characteristics

Collector characteristic

Saturation

Saturation occurs when the


supply voltage, VCC, is
across the total resistance
of the collector circuit, RC.
IC(sat) = VCC/RC
Vsat
Once the base current is high enough to produce saturation, further increases in
base current have no effect on the collector current and the relationship IC = IB is
no longer valid. When VCE reaches its saturation value, VCE(sat), the base-collector
junction becomes forward-biased.
PHYS 347 Electronics I
C-E Circuits I-V Characteristics
Collector characteristic

When IB = 0, the transistor is in


cutoff and there is essentially no
collector current except for a
very tiny amount of collector
leakage current, ICEO, which can
usually be neglected. IC  0.

In cutoff both the base-emitter


and the base-collector junctions
are reverse-biased.
Cutoff
PHYS 347 Electronics I
Discussion of an amplification effect

vi  Ri  iB
vo  RL  iC

vBE vCE
Ri   RL 
iB iC

With iB  iC vi  vo

E.g. for common-base configuration transistor:


vo
Av   50 ~ 300
vi
PHYS 347 Electronics I
DC Load Line and Quiescent Operation Point

Q-point
VCC

ICQ .Q

VCEQ
VCC  VBE VCC
Base-emitter loop: I B    40( A)
Rb Rb
DC load line
Collector-emitter loop: vCE  VCC  iC RC  10  iC  4k
PHYS 347 Electronics I
Voltage-divider bias
Because the base current is small, the approximation
 R  is useful for calculating the base voltage.
VB   2
 VCC
 R1  R2 
After calculating VB, you can find VE by
subtracting 0.7 V for VBE.
R1 RC
Next, calculate IE by applying Ohm’s VC
law to RE: V VB
IE  E VE
RE
R2 RE
Then apply the approximation I C  I E

Finally, you can find the collector voltage


from VC  VCC  I C RC
PHYS 347 Electronics I
Voltage-divider bias
Calculate VB, VE, and VC for the circuit.
 R2   6.8 k 
VB   
 CC 
V 15 V = 3.02 V
 1
R  R2   27 k  + 6.8 k  

VE = VB  0.7 V = 2.32 V +15 V


R1 RC
V 2.32 V
IE  E   2.32 mA 27 k 2.2 k
RE 1.0 k
2N3904
I C  I E  2.32 mA
R2 RE
6.8 k 1.0 k

VC  VCC  I C RC  15 V   2.32 mA  2.2 k   9.90 V


PHYS 347 Electronics I
PHYS 347 Electronics I
PHYS 347 Electronics I
PHYS 347 Electronics I
PHYS 347 Electronics I

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