FIELD EFFECT TRANSISTOR

The field effect transistor (FET) is a three-terminal device similar to the

bipolar junction transistor. The FET, however, is a unipolar device that depends
on only one type of charge carrier, either free electrons or holes. There are
basically two types of FETs: the junction field effect transistor, abbreviated JFET,
and the metal-oxide-semiconductor field effect transistor, abbreviated MOSFET.

Unlike bipolar transistors, which are current-controlled devices, FETs are

voltage-controlled devices, i.e., an input voltage controls an output current. The
input impedance is extremely high (of the order of megohms) for FETs and
therefore they require very little power from the driving source. Their high input
impedance is one reason that FETs are sometimes preferred over bipolar
transistors.
 JFETs and Their Characteristics
The figure (a) in the right shows the construction of
an N -channel JFET. Notice there are four leads: the drain,
source, and two gates. The area between the source and
drain terminals is called the channel. Because n -type
semiconductor material is used for the channel, the device is
called an N -channel JFET. Embedded on each side of the N -
channel are two smaller P-typeregions. Each p-region is
called a gate. When the manufacturer connects a separate
lead to each gate, the device is called a dual-gate JFET. Dual-
gate JFETs are most commonly used in frequency mixers,
circuits that are frequently encountered in communications
electronics. In most cases, the gates are internally connected
and the device acts like a single-gate JFET.
 JFETs and Their Characteristics

In a P-channel JFET (b) both sides of the P-

channel are two n-type gate regions. Again, these
are normally connected together to form a single
gate lead. The current flow is between the drain
and source terminals in a JFET. For the JFET, the
majority current carriers in the channel are free
electrons. Conversely, for the P-channel JFET, the
majority current carriers in the channel are holes.
 Schematic Symbols for a JFET
Figure (a) is the schematic symbol for the N-channel JFET, and
Figure (b) shows the symbol for the P-channel JFET. Notice that the only
difference is the direction of the arrow on the gate lead. In (a) , the arrow
points in toward the n -type channel, whereas in (b) the arrow points
outward from the P-type channel. In each symbol, the thin vertical line
connecting the drain and source is a reminder that these terminals are
connected to each end of the channel. One more point: When the gate
regions of a JFET are located in the center of the channel, the JFET is said
to be symmetrical, meaning that the drain and source leads may be
interchanged without affecting its operation. If the construction of a JFET
is such that the gate regions are offset from center, the JFET is called
asymmetrical. The drain and source leads may not be interchanged in an
asymmetrical JFET. Figure (c) represents the schematic symbol of an
asymmetrical JFET, and Fig. (a) and (b) show the schematic symbols of a
symmetrical JFET. Note that when the gates are offset from center in an
asymmetrical JFET, they are placed close to the source terminal as seen
on (c).
 JFET Operation
The figure illustrates the current flow in an N-
channel JFET with the P-type gates left disconnected.
Here the amount of current flow depends upon two
factors: the value of the drain-source voltage, VDS , and
the drain-source resistance, designated rDS.
Furthermore, the ohmic value of rDS is
dependent on the doping level, cross- sectional area,
and length of the doped semiconductor material used
for the channel. The electrons flow in the channel
between the two P-type gate regions. Because the drain
is made positive relative to the source, electrons flow
through the channel from source to drain. In a JFET, the
source current, IS , and the drain current, ID , are the
same. In most cases, therefore, the current flow in the
channel of a JFET is considered to be only the drain
current, ID.
 MOSFETs and Their Characteristics
The metal-oxide-semiconductor field effect transistor has a gate,
source, and drain just like the JFET. Like a JFET, the drain current in a
MOSFET is controlled by the gate source voltage VGS . There are two
basic types of MOSFETs: the enhancement-type and the depletion-
type. The enhancement-type MOSFET is usually referred to as an E-
MOSFET, and the depletion-type MOSFET is referred to as a D-MOSFET.
The key difference between JFETs and MOSFETs is that the gate
terminal in a MOSFET is insulated from the channel. Because of this,
MOSFETs are sometimes referred to as insulated gate FETs or IGFETs.
Because of the insulated gate, the input impedance of a MOSFET is
many times higher than that of a JFET.
 Depletion-Type MOSFET
Figure (a) shows the construction of an N-channel
depletion-type MOSFET, and Figure (b) shows the
schematic symbol. In (a) , the drain terminal is at the top
of the N-material and the source terminal is at the
bottom. The block of P-type material forms the
substrate into which the n -type material is embedded.
The N-type material forms the channel. Along the N-
channel, a thin layer of silicon dioxide (SiO2) is
deposited to isolate the gate from the channel. From
gate to channel are the metal, silicon dioxide, and N-
type semiconductor materials, in that order, which give
the MOSFET its name. Notice in (b) that the substrate is
connected to the source. This results in a three-terminal
device. The solid line connecting the source and drain
terminals indicates that depletion-type MOSFETs are
“normally on ” devices, which means that drain current
flows when the gate-source voltage is zero.
 Enhancement-Type MOSFETs
Figure (a) shows the construction of an N-channel
enhancement-type MOSFET. Notice that the P-type substrate
makes contact with the SiO2 insulator. Because of this, there is
no channel for conduction between the drain and source
terminals. Notice the polarities of the supply voltages in (a).
The drain and gate are made positive with respect to the
source. With VGS 0v, there is no channel between the source
and drain and so the drain current, ID, is zero. To produce
drain current, the positive gate voltage must be increased.
This attracts electrons along the right edge of the SiO2
insulator, as shown in ( b) . The minimum gate-source voltage
that makes drain current flow is called the threshold voltage ,
designated VGS(th) . When the gate voltage is less than
VGS(th) , the drain current, ID , is zero. The value of VGS(th)
varies from one E-MOSFET to the next. Figure (c) shows the
schematic symbol for the N-channel enhancement type
MOSFET. Notice the broken channel line. The broken line
represents the “ off ” condition that exists with zero gate
voltage. Because of this characteristic, enhancement-type
MOSFETs are called “normally off” devices.
Depletion-Type MOSFET Applications Depletion-type MOSFETs are
frequently used as small signal amplifiers and frequency mixers. A
depletion-type MOSFET used as a small signal amplifier is often biased
so that the Q point has the following values: ID =IDSS and VDS =VDD/2.

Enhancement-Type MOSFET Application E-MOSFETs have many

applications in electronics. The most important application is in digital
computer electronics. E-MOSFETs are used because they take up very
little space on a chip (an integrated circuit) compared to the space used
by an equivalent circuit with bipolar transistors. Thus, when packaging
hundreds or even thousands of transistors onto an IC, MOSFETs are
used. Another big reason that enhancement-type MOSFETs are used
frequently is that they consume extremely little power.
Handling MOSFETs
One disadvantage of MOSFET devices is their extreme sensitivity to
electrostatic discharge (ESD) due to their insulated gate-source regions. The
SiO2 insulating layer is extremely thin and can be easily punctured by an
electrostatic
discharge.
Because MOSFETs can be easily damaged from electrostatic discharge,
extreme caution is recommended when handling them. The following is a list
of precautions:

1. Never insert or remove MOSFETs from a circuit with the power on .

2. Never apply input signals when the dc power supply is off .
3. Wear a grounding strap on your wrist when handling MOSFET devices.
This keeps the body at ground potential by bleeding off any buildup
of static electric charge.
4. When storing MOSFETs, keep the device leads in contact with
conductive foam, or connect a shorting ring around the leads.
It is extremely important to observe these precautions to avoid
possible damage to the MOSFET device.

Many manufacturers put protective Zener diodes across the gate-

source region to protect against ESD .The diodes are arranged so that
they will conduct for either polarity of gate-source voltage, VGS . The
breakdown voltage of the diodes is much higher than any voltage
normally applied between the gate source region but less than the
breakdown voltage of the insulating material. One drawback of using
the protective diodes is that the input impedance of the device is
lowered considerably.