BASIC

ELECTRONICS
EE 152
Q&A

©2024

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 1. A silicon sample is 2.5 cm long and has a cross-sectional
area of 0.1 cm2 . The silicon is n-type with a donor impurity
concentration of Nd 2 x 1015 cm3 . The resistance of the
sample is measured and found to be 70 Ω. What is the
electron mobility?
a. 0.208 cm2/V-s
b. 1116 cm2/V-s
c. 320 cm2/V-s
d. 1050 cm2/V-s

Answer: b. 1116 cm2/V-s

L L
R= =
σA enμn A
L 2.5 cm
μn = =
enRA (1.6 × 10−19 C)(2 × 1015 cm3 )(70 Ω)(0.1 cm2 )
= 1116 cm2 /V. s

The voltage regulator circuit above is required to maintain the

load voltage, VL at 6 V. The circuit derives its power from a supply
of Vi = 30 V. the breakdown voltage of the zener diode, Vz = 6 V
and the maximum current that can be permitted to flow through
the Zener diode is 12 mA.
(Take Izmin = 10% of Izmax)

2. Determine the minimum value of RL which will ensure this

requirement.
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 a. 500 Ω
b. 563 Ω
c. 263 Ω
d. 632 Ω

Answer: 263 Ω
Voltage through 1kΩ resistor = 30 V − 6 V = 24 V
24 V
Current through 1kΩ resistor = = 24 mA
1kΩ
At the junction, current divides into the Zener diode and resistor
RL.
For the minimum value of RL (RLmin), IZ must be minimum
∴ IZmin = 0.1IZmax = 1.2 mA
Hence, current through RL, IL = 24 mA − 1.2 mA = 22.8 mA
Voltage across RL is kept constant at 6 V.
6V
∴ RL = = 263 Ω
22.8 mA

3. Determine the maximum value of RL which will ensure this

requirement.
a. 500 Ω
b. 563 Ω
c. 263 Ω
d. 632 Ω

Answer: 500 Ω
For maximum value of RL (RLmax), IZ must be maximum
IZmax = 12 mA
Hence, current through RL, IL = 24 mA − 12 mA = 12 mA
Voltage across RL is kept constant at 6 V.
6V
∴ RL = = 500 Ω
12 mA

4. Determine the minimum value of the power drop across the

zener diode.
a. 2.350 W
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 b. 0.3156 W
c. 3.156 W
d. 4.012 W

Minimum power drop across zener diode, PZmin = IZmin × VZ =

1.2 mA × 6 V = 7.2 mW

5. Determine the maximum value of the power drop across the

zener diode.
a. 2.350 W
b. 0.3156 W
c. 3.156 W
d. 4.012 W

Minimum power drop across zener diode, PZmax = IZmax × VZ =

12 mA × 6 V = 72 mW

Use the preamble below to answer questions 6-7

A silicon crystal having a cross-sectional area of 0.001 cm2 and a
length of 10-3 cm is connected at its ends to a 10-V battery. At T
300 K, we want a current of 100 mA in the silicon
6. What is the required resistance?
a. 10 Ω
b. 1 Ω
c. 10 kΩ
d. 0.1 kΩ

Answer: d. 0.1 kΩ
(Apply Ohm’s Law)

7. Calculate the required conductivity.

a. 10 S/m
b. 0.01 S/m

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 c. 15.2 S/m
d. None of the above

Answer: 0.01 S/m

I V
Drift current density, Jd = = σE = σ
A L
I × L 100 mA × 0.001 cm
σ= = = 0.01 S/m
A×V 0.001cm2 × 10 V

8. In a semiconductor diode, the barrier offers opposition to

a. Holes in P-region only
b. Free electrons in N-region only
c. Majority carriers in both regions
d. Majority as well as minority carriers in both regions

Answer: d. Majority as well as minority carriers in both regions

9. In an ideal diode, there is no breakdown, no ………… current,

and no forward ………. Drop.
a. Reverse, voltage
b. Forward, current
c. Forward, voltage
d. Reverse, current

Answer: a. Reverse, voltage

10. For a P-N diode, the number of minority carriers

crossing the junction depends on
a. Forward bias voltage
b. Potential barrier
c. Rate of thermal generation of electron-hole pairs
d. None of the above

Answer: c. Rate of thermal generation of electron-hole pairs

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 11. In a half-wave rectifier, the load current flows
a. Only for the positive half cycle of the input signal
b. Only for the negative half cycle of the input signal
c. For full cycle
d. For less than the fourth cycle

Answer: a. Only for the positive half cycle of the input signal

12.Silicon is not suitable for the fabrication of light-emitting

diodes because it is
a. An indirect band gap semiconductor
b. Direct band gap semiconductor
c. Wideband gap semiconductor
d. Narrowband gap semiconductor

Answer: a. An indirect band gap semiconductor

13.When avalanche breakdown occurs, covalent bonds are not

affected
a. True
b. False

Answer: False

14. If too large a current passes through the diode

a. All electrons will leave
b. All holes will freeze
c. Excessive heat may damage the diode
d. Diode will emit light

Answer: c. Excessive heat may damage the diode

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 15. The ripple factor of a full-wave rectifier circuit
compared to that of a half-wave rectifier circuit without a
filter is
a. Half of that for a half-wave rectifier
b. None of the above
c. Equal to that of a half-wave rectifier
d. Less than half that for a half-wave rectifier circuit

Answer: d. Less than half that for a half-wave rectifier circuit

16.What is the necessary a.c. input power from the transformer

secondary used in a half-wave rectifier to deliver 500 W of
d.c. power to the load?
a. 308 W
b. 848 W
c. 616 W
d. 1232 W

2
P = Idc R
Ip I2p R
For half-wave, Idc = . hence, P =
π π2
Ip
For a.c. power, Pac = Iac
2
R where Iac =
2
I2p R
Hence, Pac =
4
π2 π2
∴ Pac = Pdc = × 500 = 1234 W
4 4

17.The RMS value of a half-wave rectifier current is 10 A. Its

value for full wave rectification would be
a. 10 A
b. (20/π) A
c. 14.14 A
d. 20 A

Ip
For half-wave, Irms =
2

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 Ip = 2Irms = 20 A
Ip 20
For full-wave, Irms = = = 14.14 A
√2 √2

18. Peak inverse voltage for a diode is the

a. Voltage corresponding to rated maximum voltage
b. Maximum voltage that can be applied across the diode
in the conducting direction
c. Maximum voltage that can be applied across the diode
in the non-conducting direction
d. None of the above

Answer: c. Maximum voltage that can be applied across the diode

in the non-conducting direction

19.If a 169.7 V half-wave peak has an average voltage of 54 V,

what is the average of the two full-wave peaks?
a. 119.9 V
b. 108.0 V
c. 115.7 V
d. 339.4 V

2 2
Vdc = × Vp = × 54 = 108.0 V
π π

20. In general, LEDs operate at voltage levels from …………. V

to …………. V
a. 1.0, 3.0
b. 1.7, 3.3
c. 0.5, 0.4
d. None of the above

Answer: b. 1.7, 3.3

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 21.For the same secondary voltage, the output voltage from a
centre-tap rectifier is
a. Twice
b. Thrice
c. Four times
d. One-half

Answer: a. Twice

22. A half-wave rectifier has an input voltage of 240 V

r.m.s. If the step-down transformer has a turn ratio of 8:1,
what is the peak load voltage? Ignore diode drop
a. 27.5
b. 86.5
c. 30
d. 42.5

Ns 1
Vs = Vp = × 240 V = 30 V
Np 8
Vm = Vs √2 = 42.4 V

23. Four diodes are used in a full wave rectifier circuit, the
forward resistance which may be considered constant at 1 Ω
and infinite reverse resistance. The alternating supply
voltage is 240 V r.m.s and the load resistance is 280 Ω. Find
the mean load current
a. 0.7
b. 0.45
c. 0.6
d. 0.8

Answer: d. 0.8 A
For full wave, Vm = Vrms √2 = 339 V
2
Mean/Average voltage, Vave = × Vm
π

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 2Vm 2×339
Mean/average current, Iave = = = 0.8 A
π×(R+2r) π×(280+2)

24. A resistor has 10 V across it and 1 mA flowing through

it. What is the resistance of the resistor?
a. 1 KΩ
b. 100 Ω
c. 1000 Ω
d. 10 KΩ

Answer: d. 10 KΩ

25. What is the voltage drop across an ideal diode?

a. 0.1 V
b. 0.3 V
c. 0.7 V
d. 0.0 V

Answer: d. 0.0 V

26. Three silicon diodes are placed in series in the same

direction. What is the overall voltage drop of the three
diodes?
a. 0.7 V
b. 1.9 V
c. 2.1 V
d. 2.2 V

Answer: c. 2.1 V
Series connection implied that VT = ΣV = 3(0.7) V = 2.1 V

27. The importance of including a capacitor in a rectifier is

to
a. Filter out ripple voltage
b. Store charges
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 c. Discharge charges
d. Regulate output voltage

Answer: Filter out ripple voltage

28. The Zener diode operates in the …………….. Region

a. Forward
b. Reverse-breakdown
c. Active
d. Saturation

Answer: b. Reverse-breakdown

29. The breakdown voltage of a Zener diode can be

controlled by …………..
a. Changing the type of semiconductor used
b. Controlling the voltage across the zener diode
c. Controlling the current flowing through the zener diode
d. Controlling the doping level of the zener diode

Answer: d. Controlling the doping level of the zener diode

30. Zener diodes allow current to flow in how many

directions?
a. 1
b. 2
c. 3
d. 4

Answer: a. 1

31.The major application of zener diodes is in ……………

a. Voltage regulation
b. Rectification

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 c. Amplification
d. None of the above

Answer: a. Voltage regulation

32. In designing zener diode circuits, a resistor is placed in

series with the zener diode to
a. Control the amount of regulation
b. Limit the voltage across the diode
c. Limit the current flowing through the diode to safe
levels
d. None of the above

Answer: c. Limit the current flowing through the diode to safe

levels

33. Ama Vida designed a zener diode regulator for a

circuit she is building for her basic electronics project. Upon
power on, the zener diode heats up and gets damaged
although the voltage supplied did not exceed the max
voltage for the zener diode. What is the most probable
problem with the circuit?
a. The input voltage is too low
b. The input voltage is too high
c. The series resistance is too high
d. The series resistance is too low

Answer: d. The series resistance is too low

34. The voltage across a zener diode remains constant

after which situation?
a. Reverse saturation
b. Breakdown
c. Conduction

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 d. Reaction

Answer: b. Breakdown

35. Kwame David is designing a feedback-controlled low-

dropout voltage regulator. He needs a 4.3 V reference for his
circuit. What type of zener diode should he purchase for his
circuit?
a. A high-power zener diode
b. A low power zener diode
c. A zener diode with VZ = 4.3 V
d. A zener diode with VZ = 0.5 V

Answer: c. A zener diode with VZ = 4.3 V

36. For the basic operation of a transistor, the base-

emitter junction is ………… biassed.
a. Forward-
b. Semi-
c. Reverse-
d. Not

Answer: a. Forward-

37. For the basic operation of a transistor, the collector-

base junction is …………. Biassed.
a. Semi-
b. Not
c. Reverse-
d. Forward-

Answer: Reverse-

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 38. The output or collector characteristics for a common
base transistor amplifier show that as a first approximation,
the relation between IE and IC in the active region is given by
………………
a. IE << IC
b. IE ≈ IC
c. IE = IC
d. IE >> IC

Answer: b. IE ≈ IC

39. In the saturation region, the base-emitter junction

…………..
a. And the base-collector junctions are both forward-
biassed
b. Is forward-biassed while the base-collector junction is
reverse-biassed
c. And the base-collector junctions are both reverse-
biassed
d. Is reverse-biassed while the base-collector junction is
forward-biassed

Answer: a. And the base-collector junctions are both forward-

biassed

40. In the cut-off region, the base-emitter junction ………….

a. And the base-collector junctions are both reverse-
biassed
b. Is reverse-biassed while the base-collector junction is
forward-biassed
c. And the base-collector junction are both forward
biassed
d. Is forward-biassed while the base-collector junction is
reverse-biassed

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Answer: a. And the base-collector junctions are both reverse-
biassed

41. In the active region, the base-emitter junction ………….

a. Is forward-biassed while the base-collector junction is
reverse-biassed
b. Is reverse-biassed while the base-collector junction is
forward-biassed
c. And the base-collector junctions are both reverse-
biassed
d. And the base-collector junctions are both forward-
biassed

Answer: a. Is forward-biassed while the base-collector junction is

reverse-biassed

42. In a small-signal transistor, the typical range of the

parameter α is
a. Greater than 1
b. Almost equal to 1 but less than 1
c. Almost equal to 1 but greater than 1
d. Between 0 and 1

Answer: b. Almost equal to 1 but less than 1

43. The common-base short-circuit amplification factor is

better known as …………
a. dc β
b. dc α
c. ac α
d. ac β

Answer: b. dc α

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 44. The common-emitter forward current amplification
factor is better known as ……………
a. dc β
b. dc α
c. ac α
d. ac β

Answer: a. dc β

45. In a small-signal transistor, the typical range of the

parameter β is ……..
a. Large and in the range of about 50 to 400
b. Between 0 and 100
c. Almost equal to 100 but always less than 100 (90 to
100)
d. Greater than 100

Answer: Large and in the range of about 50 to 400

46. A BJT has measured DC current values of IB = 0.1 mA

and IC = 8.0 mA. When IB is varied by 100 μA, IC changes by
100 mA. What is the value of the βac for this device
a. 800
b. 80
c. 100
d. 10

Answer: c. 100
ΔIC 100 mA
βac = = = 100
ΔIB 100 μA

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 47. A BJT has measured DC current values of IB = 0.1 mA
and IC = 8.0 mA. When IB is varied by 100 μA, IC changes by
100 mA. What is the value of the βdc for this device
a. 800
b. 80
c. 100
d. 10

Answer: b. 80
IC
βac = = 80
IB

48. When a BJT is operating in the saturation region, the

voltage drop from the collector to the emitter, VCE, is
approximately equal to ………….
a. Zero (about 0.3 V)
b. Base current times the base resistor
c. Emitter voltage
d. Base bias voltage

Answer: a. Zero (about 0.3 V)

49. When a BJT is operating in the active region, the

voltage drop from the base to the emitter, VBE is
approximately equal to the ………
a. Diode drop (about 0.7)
b. Base current times base resistance
c. Emitter voltage
d. Base bias voltage

Answer: a. Diode drop (about 0.7)

50. BJTs are commonly used as ………………

a. Series damper circuits

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 b. The primary components of rectifiers
c. The primary components of amplifiers
d. None of the above

Answer: c. The primary components of amplifiers

51. VCE is measured ……………

a. From the collector terminal to the emitter terminal
b. From the emitter terminal to ground
c. From the collector-emitter junction to ground
d. None of the above

Answer: a. From the collector terminal to the emitter terminal

52. Why is the arrow on the BJT schematic symbol

important?
a. It identifies the collector terminal and the type of BJT
b. It identifies the base terminal and the type of BJT
c. It identifies the emitter terminal and the type of BJT
d. None of the above

Answer: c. It identifies the emitter terminal and the type of BJT

53. In most cases, which two of the three BJT terminal

currents are approximately equal in value?
a. Emitter current and base current
b. Collector current and base current
c. Collector current and emitter current
d. All currents are approximately equal

Answer: c. Collector current and emitter current

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 54. Which of the following biassing combinations is not
normally associated with the three transistor operating
regions?
a. E-B junction = reverse, C-B junction = forward
b. E-B junction = forward, C-B junction = reverse
c. E-B junction = reverse, C-B junction = reverse
d. All of the above

Answer: a. E-B junction = reverse, C-B junction = forward

55. The condition where the increase in bias current will not
cause a further increase in collector current is called …………
a. Cutoff
b. Active operation
c. Saturation
d. All of the above

Answer: c. Saturation

56. β is the ratio of ……………

a. Collector current to base current
b. Emitter current to collector current
c. Collector current to emitter current
d. Base current to collector current

Answer: a. Collector current to base current

57. A given BJT has an emitter of 12 mA and a base

current of 600 μA. What is the value of βdc?
a. 200
b. 21
c. 20
d. 19

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Answer: d. 19

58. A given BJT has an emitter current of 15 mA and a

collector current of 14.95 mA. What is the value of βdc?
a. 250
b. 1.003
c. 299
d. 300

Answer: 299

59. For a given BJT, β = 400. What is the value of α for the
device?
a. 0.9975
b. 0.002
c. 1.00
d. 1.0025

Answer: a. 0.9975

60. A given BJT has α of 0.9985 and a collector current of

15 mA. What is the value of the base current?
a. 15 mA
b. 15.15 mA
c. 14.85 mA
d. None of the above

Answer: d. None of the above

61.Which transistor amplifier configuration is the most

commonly used?
a. Common-collector
b. Common-base
c. Common-emitter

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 d. None of these are used more often than the other

Answer: c. common-emitter

62. A given transistor has ratings of maximum collector

current equal to 200 mA and β that varies between 150 and
200. What is the maximum allowable value of base current?
a. 4 mA
b. 1 mA
c. 1.33 mA
d. None of the above

Answer: c. 1.33 mA

63. When a transistor is in saturation, VCE, is approximately

equal to …………….
a. 0.3 V
b. Collector current x collector resistance
c. Emitter voltage
d. Collector supply voltage

Answer: a. 0.3 V

64. Moore’s Law states that transistor counts in an

integrated circuit will double every ……………. Years
a. 4
b. 6
c. 8
d. 2

Answer: d. 2

65. The term bipolar means:

a. The use of both holes and electrons as carriers

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 b. Polarity is unimportant
c. Electrons make up the majority of carriers
d. Diodes only

Answer: a. The use of both holes and electrons as carriers

66. If the transistor is not biassed properly, it would work

……………….. and produce distortions in the output signal.
a. Inefficiently
b. Efficiently
c. As a switch
d. None of the above

Answer: a. Inefficiently

67. A transistor is biassed either with the help of …………………..

a. Battery
b. Associating a circuit
c. Both of the above
d. None of the above

Answer: c. Both of the above

68. Which of the following influences changes in the

collector current of a transistor?
a. Temperature
b. Transistor parameters
c. Both of the above
d. None of the above

Answer: c. Both of the above

69. The maintenance of the operating point stable is called

……………………..

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 a. Amplification
b. Transformation
c. Stabilisation
d. Switching circuit

Answer: c. Stabilisation

70. The selection of a proper quiescent point generally

depends on the following factors:
a. The amplitude of the signal to be handled by the
amplifier and distortion level in signal
b. The lead to which the amplifier is to work for a
corresponding supply voltage
c. Both of the above
d. None of the above

Answer: c. Both of the above

71.The operating point of a transistor amplifier shifts mainly

with changes in ……………..
a. Temperature
b. Humidity
c. Fog
d. Mist

Answer: a. Temperature

72. The input circuit of a transistor has …………………………

because of ………………….. bias
a. low resistance; reverse
b. High resistance; reverse
c. Low resistance; forward
d. High resistance; forward

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Answer: c. Low resistance; forward

73. The bias voltage, VEE, applied at the input circuit of a

transistor to keep it forward biassed is a ………………………….
source.
a. DC
b. AC
c. Can be AC or DC
d. None of the above

Answer: a. DC

74. A common base transistor amplifier has an input

resistance of 20 Ω and an output resistance of 100 kΩ. the
collector load is 1 kΩ. If a signal of 500 mV is applied between
the emitter and the base, find the voltage amplification.
Assume αac to be nearly unity.
a. 5000
b. 50
c. 2500
d. 100

Answer: c. 2500

75. The current amplification factor of a common base

transistor connection is ………………
a. Always less than 0
b. Greater than 0
c. Always less than 1
d. None of the above

Answer: c. Always less than 1

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 76. The goal is to set the …………….….. such that it does not go
into saturation or cut off when an AC signal is applied.
a. Turn-on value
b. Q point
c. Temperature
d. Amplification

Answer: b. Q-point

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