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Tutorial Assignment 01 Diode

The document is an assignment for electronics engineering, consisting of various questions related to diodes, transformers, rectifiers, and semiconductor physics. It covers topics such as the preference of silicon diodes over germanium, transformer utilization factor, voltage regulation with Zener diodes, and characteristics of different types of diodes. Students are required to answer any five questions from the provided list.

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himanshu706048
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5 views3 pages

Tutorial Assignment 01 Diode

The document is an assignment for electronics engineering, consisting of various questions related to diodes, transformers, rectifiers, and semiconductor physics. It covers topics such as the preference of silicon diodes over germanium, transformer utilization factor, voltage regulation with Zener diodes, and characteristics of different types of diodes. Students are required to answer any five questions from the provided list.

Uploaded by

himanshu706048
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ELECTRONICS ENGINEERING

ASSIGNMENT-01
Note : Write answers for any FIVE questions
Q1. Why Silicon diode is preferred over Germanium Diode.

Q2. Define transformer utilization factor.

Q3. For a regulator circuit Resistance R is connected in between a d.c. power supply v=200V
and a Zener diode is connected with Vz =50 Volt. Resistor RL is connected across the Zener
diode.
(i) Show the circuit arrangement.
(ii)Calculate ‘R’ to allow voltage regulation from no IL=0 to IL max. What is ILmax.?
(iii) If ‘R’ is set as in part (ii) and the current through load set at IL =25mA. What are the
limits between which V may vary without loss of regulation in the circuit?

Q4. Comment on critical inductance and describe physical mechanism of avalanche


multiplication.

Q5. Consider a full wave bridge rectifier. Calculate the ripple factor for it.

Q6. Draw the circuit diagram of a full wave rectifier.

Q7. Draw the V-I characteristics of a Zener diode

Q8. Differentiate between LED and Conventional diode

Q9. Prove that built in potential at a Si PN Junction is depends on donor and acceptor ion
concentrations.

Q10. Determine 𝐼𝐷 , 𝑉𝐷2, and 𝑉𝑂 in the figure given


Que 11. What is an ideal diode. Draw the V-I characteristics of the ideal diode. Draw equivalent
model and VI characteristics for diode with practical consideration of diode resistances and diode
capacitances.

Que 12. Define the cut-in voltage and explain the effect of temperature on the volt ampere
characteristics of a diode.

Que 13. Explain the following terms:


• Bulk resistance.
• Junction resistance.
• AC or Dynamic resistance.

Que 14. Define the term transition capacitance of a reverse bias diode and proof that
CT = €A/W.

Que 15. A sample of Ge is doped to the extent of 1014 doner atom/cm3 and 7x1012 acceptor
atoms/cm3 . At the temperature of the sample the resistivity of pure Ge is 60Ω-cm.
If the applied Electric field is 2 v/cm. Find the total conduction current density.

Que 16. Define a graded semiconductor, Explain why an electric field must exist in a
graded semiconductor and prove that an open circuited step graded PN junction :
Vo = VT ln NA ND /ni2

Que 17. With neat sketch explain the working of Full wave rectifier. Derive an Expression
for the Efficiency of the Full wave Rectifier.

Que 18. Explain the avalanche multiplication and the zener breakdown mechanism for
breakdown diodes.

Que 19. What is zener diode ? Draw the V-I characteristics of zener diode and with help of
circuit diagram, Explain the working of zener diode as voltage regulator.

Que 20. Write the short notes on :


1. Ripple factor.
2. Transformer utilization factor.
3. Voltage regulation.
4. Peak inverse voltage.

Que 21. Explain LC filter.


Que 22. A fullwave rectifier circuit is fed from a transformer having the center tapped
secondary binding the rms voltage from either and of the secondary to center tap is
30 volt. If diode forward resistance is 2Ω. And that of the half secondary is 8Ω for
a load of 1 k Ω, calculate
1) Power deliver to the load .
2) % regulation at full load.
3) Next efficiency of rectification.
4) T.U.F. of secondary.

Que 23. (i) The avalanche diode regulator at 50volt over a range of diode current from 50-
40mA The supply voltage V = 200V. calculate R to allow the voltage regulation
from a load current IL= 0 up to Imax, the maximum possible value of IL , What is
Imax ?
(ii) If R is set as in the part (i) and the load current is set at 25mA, What are the
limits between which V may vary without loss of the regulation in circuit.

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