EL

JA EC
D TR
AV I A
C
PU A ITM
R L E AV
U N A
N G C
IV IN H
ER E A
SI ER TTE
TY IN R

Amitava Chatterjee
, K G D JE
O E E
LK PA
AT R
A , TM
IN EN
D T
IA
Department of Electrical Engg., Jadavpur University, Kolkata, India
Piezoelectric Transducers

1
 Piezoelectric Transducers

D T
IN EN
IA
A , TM
Piezoelectric Effect:

AT R
O E E
, K G D JE
LK PA
TY IN R
SI ER TTE
Mechanical Electrical Charge

ER E A
Deformation

IV IN H
Generation

N G C
U N A
R L E AV
PU A ITM

 Piezoelectric Transducers employ the principle of electromechanical

AV I A

energy conversion, in both directions.

C

 The mechanical input/electrical output direction is the basis of many

D TR

instruments used for measuring acceleration, force, and pressure.

JA EC
EL

Amitava Chatterjee
2
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Transducers

D T
IN EN
IA
A , TM
Piezoelectric Materials:

AT R
O E E
, K G D JE
LK PA
Natural crystals (quartz, rochelle salt, etc.)

TY IN R
SI ER TTE
Synthetic crystals (lithium sulphate, ammonium
dihydrogen phosphate,
phosphate etc.)
etc )

ER E A
IV IN H
Polarized ferroelectric ceramics (barium titanate etc.)
N G C
U N A
R L E AV

 Because of their natural asymmetric structure, the crystal materials

PU A ITM

exhibit this effect without further processing.

AV I A

 The ferroelectric ceramics must be artificially polarized by applying a strong

C

electric field to the material (while it is heated to a temperature above the

D TR

Curie point of that material) and then slowly cooling with the field still applied.
JA EC
EL

Amitava Chatterjee
3
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Transducers

D T
IN EN
IA
A , TM
Different Modes of Mechanical Deformations:

AT R
O E E
, K G D JE
LK PA
 Thickness-expansion

TY IN R
SI ER TTE
 Transverse-expansion

ER E A
 Thickness-shear

IV IN H
 Face-shear
N G C
U N A
R L E AV
PU A ITM

 The piezoelectric effect is direction sensitive. Here tension produces

AV I A

a definite
d fi i voltage
l polarity
l i whilehil compressioni produces
d the
h opposite.
i
C
D TR
JA EC
EL

Amitava Chatterjee
4
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Transducers

D T
Piezoelectric Effect under Thickness-Expansion Mode

IN EN
IA
(e.g. Barium Titanate):

A , TM
AT R
O E E
Force (F)

, K G D JE
LK PA
3
electrode

TY IN R
6

SI ER TTE b
output
p

ER E A
e
voltage

IV IN H
4

N G C
1 t

U N A l
R L E AV
F
PU A IT

5
M

2
AV I A

A i System
Axis S t Pi
Piezoelectric
l t i Transducer
T d
C

 Mechanical deformation generates a charge and this charge appears as a

D TR

g across the electrodes  E   .

Q
voltage
JA EC

 C
EL

Amitava Chatterjee
5
Department of Electrical Engg., Jadavpur University, Kolkata, India
Piezoelectric Effect under Thickness-Expansion Mode

D T
(e.g. Barium Titanate):

IN EN
IA
Force (F)

A , TM
3
electrode
6

AT R
O E E
output

, K G D JE
LK PA
e
voltage
4
1 t

TY IN R
l

SI ER TTE
F

5
2

‘g’ constant:

ER E A
IV IN H
N G C
 U N A
electric field g
generated in direction 3
e
t
R L E AV
g 33
 mechanical stress applied in direction 3

F
PU A IT

lb
M

F
AV I A

Voltage Output = e  g 33   t  g 33  stress  thickness

lb
C

12  10-3 (V/m) / (N/m2) for barium titanate

D TR

Typical Values
JA EC

50  10-3 (V/m) / (N/m2) for quartz

EL

Amitava Chatterjee
6
Department of Electrical Engg., Jadavpur University, Kolkata, India
Piezoelectric Effect under Thickness-Expansion Mode

D T
(e.g. Barium Titanate):

IN EN
IA
Force (F)

A , TM
3
electrode
6

AT R
O E E
output

, K G D JE
LK PA
e
voltage
4
1 t

TY IN R
l

SI ER TTE
F

5
2

‘d’ constant:

ER E A
IV IN H
N G C
 charge
g g U N A
generated in direction 3 Q Q 1
R L E AV
d 33  
 Force applied in direction 3 F lb  F lb 
PU A ITM

d 33  g 33 ,
AV I A

 = permittivity of the material

C

Permittivity of barium titanate: 12.5  10-9 F/m.

D TR

Typical Values
JA EC

Permittivity
i i i off quartz 4 06  10-11
: 4.06 11 F/m.
/
EL

Amitava Chatterjee
Department of Electrical Engg., Jadavpur University, Kolkata, India 7
 Piezoelectric Displacement Transducers

D T
IN EN
IA
A , TM
 For displacement transducers, the pertinent quantity is output voltage

AT R
O E E
, K G D JE
LK PA
(or charge) per unit deflection (instead of stress or force). This is because

TY IN R
it is really the “deflection” that causes the charge generation. Hence a

SI ER TTE
knowledge of modulus of elasticity is also needed.

ER E A
IV IN H
N G C
U N A Typical Values
R L E AV
PU A ITM
AV I A

M d l off elasticity
Modulus l ti it off quartz 8 6  1010 N/m
t = 8.6 N/ 2
C

Modulus of elasticity of barium titanate = 12  1010 N/m2

D TR
JA EC
EL

Amitava Chatterjee
8
Department of Electrical Engg., Jadavpur University, Kolkata, India
Piezoelectric Displacement Transducers

D T
IN EN
IA
A , TM
Cable Ramp Rleak
R   Ramp

AT R
O E E
eo
xi
Ramp  Rleak

, K G D JE
LK PA
l k

TY IN R
SI ER TTE
Amplifier
Piezoelectric crystal C  Ccrystal  Ccable  Camp
+

ER E A
charge

IV IN H
eo
To amplifier:
Input current
q  K q xi

N G C
 K q  charge sensitivity (c/m)
assumed zero
q = Kqxi
generator
U N A 
 xi  displacement (m)
R L E AV
_

Rleak Ccrystal Ccable Camp Ramp

PU A IT

dq dxi
icr   Kq
+
M

iC iR
AV I A

current
dt dt
C
R eo
C

icr  kq xi icr  ic  iR

D TR

generator
_
JA EC
EL

Amitava Chatterjee
9
Department of Electrical Engg., Jadavpur University, Kolkata, India
Piezoelectric Displacement Transducers

D T
IN EN
IA
 i dt  i  i dt

A , TM
Cable

xi
eo e e 
o c
c
 cr R

AT R
O E E
C C

, K G D JE
LK PA
Amplifier

TY IN R
Piezoelectric crystal

SI ER TTE
+

charge Kq
Eo s 
eo
To amplifier:
s

ER E A
Input current K q sR
R C Ks
K
  

IV IN H
assumed zero

X i s  1  sRC s  1
generator q = Kqxi
1

N G C
_
s
U N A
Rleak Ccrystal Ccable Camp Ramp RC T
R L E AV
+   Kq
iC iR
K
  voltage sensitivity  (V/m)
PU A IT

current
C
 
M

C
R eo
T time constant  RC (s)
AV I A

generator icr  k q xi  

_
C
D TR

The steady state response to a constant xi is zero.

JA EC

Thus we cannot measure static displacements.

EL

Amitava Chatterjee
10
Department of Electrical Engg., Jadavpur University, Kolkata, India
Piezoelectric Displacement Transducers

D T
IN EN
Frequency Response

IA
Cable

E  j 

A , TM
jK jKT
eo
xi

o
 
X  j  j  1 jT  1

AT R
O E E
Amplifier
Piezoelectric crystal

, K G D JE
LK PA
+
i
charge

TY IN R
To amplifier:
eo
Input current
assumed zero

SI ER TTE
generator q = Kqxi
_

Rleak Ccrystal Ccable Camp Ramp

ER E A
iC iR

E o  j 
current

IV IN H
K T
C
R eo

N G C
icr  k q x i
 S
X i  j 
generator

U N A 1  T
_
2 2
R L E AV
S
PU A ITM

K
AV I A

T3  T2  T1
K T3 T2
C

T1
2
D TR


JA EC

1
T
EL

Amitava Chatterjee
11
Department of Electrical Engg., Jadavpur University, Kolkata, India
Piezoelectric Displacement Transducers

D T
IN EN
Static Response

IA
A , TM
Cable

Steady state response for constant or static xi = 0.

eo
xi

AT R
O E E
Amplifier
Piezoelectric crystal

Dynamic Response

, K G D JE
LK PA
+

charge
To amplifier:

TY IN R
eo

For vibratory xi (sinusoidal), flat amplitude

Input current
assumed zero

SI ER TTE
generator q = Kqxi
_

Rleak Ccrystal Ccable Camp Ramp

response, within a specified percentage, restricts
+
iC iR
the lowest frequency possible.
possible

ER E A
current

IV IN H
C
R eo

N G C
generator icr  k q x i
_

U N A For 5% basis, the frequency must exceed 1

R L E AV
given by:
PU A IT

T
M

2
3.04
1  1  0.05 
2
AV I A

T  T   1
1
2
C
D TR

The low frequency limit is set by the time constant T – higher the T, lower the 1.
JA EC
EL

Amitava Chatterjee
12
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Displacement Transducers

D T
IN EN
Pulse Response

IA
xi

A , TM
Let the input be a pulse excitation:
A

AT R
O E E
xi  Au t   Au t  Tc 

, K G D JE
LK PA
TY IN R
A  sT A
X i s  

SI ER TTE
e 
t
c TC

s s

ER E A
eo Kq A
The differential equation describing

IV IN H
C

N G C
the response:
 dx 
U N A
R L E AV
de e t
C o  o  Kq  i 
dt R  dt 
PU A IT

increasing T increasing T
M

deo  dx   K 
 eo  KT  i   K 
AV I A

T and T  RC 
q

d
dt  dt
d  C 
C

1  e  sT 1  e  sT
Eo s   AKT
c c
D TR

 AK  t Tc 
sT  1
eo t   AKe
AK u t   AKe u t  Tc 
1 t
 
s
JA EC

T AK
T T
EL

Amitava Chatterjee
13
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Displacement Transducers
Pulse Response

D T
xi

IN EN
Conclusion:

IA
A

A , TM
 A large T is desirable for faithful

AT R
O E E
, K G D JE
LK PA
t
reproduction
d ti off xi. TC

TY IN R
 If the decay and undershoot at t = Tc are to Kq A

SI ER TTE
eo
C
be kept within 5% of the true value (i.e. the

ER E A
pulse height), T must be at least 20Tc.

IV IN H
t

N G C
T can be increased by increasing either or
U N A increasing T increasing T
R L E AV
both R and C.
C
Increasing C: Price Paid ??
PU A ITM

By connecting an external shunt capacitor across

AV I A

the transducer terminals . K

A loss in sensitivity as K  q .
C

Increasing R: C
D TR
JA EC

B connecting
By ti a series
i resistance
it Rs external
t l to
t the
th amplifier.
lifi
EL

Amitava Chatterjee
14
Department of Electrical Engg., Jadavpur University, Kolkata, India
Connecting Series Resistance External to the Amplifier

D T
IN EN
IA
A , TM
RS

AT R
O E E
PZE Cable

, K G D JE
LK PA
Amplifier
C
Crystal
t l

TY IN R
SI ER TTE
K q  Ramp 
K   
C  Ramp  Rs 


ER E A
IV IN H
T  Ramp  Rs  C

N G C C  Ccrystal  Ccable 
U N A RS
R L E AV
y

+
PU A ITM
AV I A

eo
Ramp
Ccrystal + Ccable
C
D TR

_
JA EC
EL

Amitava Chatterjee
15
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Accelerometers

D T
General Description
p off Accelerometers

IN EN
IA
Md 2  y  x  Force equation of the system:

A , TM
dy
f
d 2  y  x
Ky
dt 2 dt dy

AT R
O E E
M f  Kyy  0

, K G D JE
LK PA
2
dt dt

TY IN R
SI ER TTE
d2y dy d 2x
M
M 2 f  Ky  M 2  Ma
dt dt dt

ER E A
K f
x = displacement of the moving

IV IN H
N G C
object (or frame) with respect to a
U N A fixed reference frame,
R L E AV
x
+ y = displacement
di l t off the
th mass M with
ith
y
PU A IT

0
+
0
_ respect to accelerometer frame,
M

a = input acceleration.
AV I A

Simplified Diagram of an Accelerometer

(a spring-mass-dashpot system) xi and xM are absolute
C

displacements, and xo is chosen

D TR

For our system: K x  Bx  Mx  M x  x 

s o o Mzero when gravity force is acting
i o
JA EC

along the x-axis statically.

EL

Amitava Chatterjee
16
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Accelerometers

D T
General Description p off Accelerometers

IN EN
K s xo  Bxo  MxM  M xi  xo 

IA
A , TM
Md  y  x  2
dy
Ky f
dt 2 dt

AT R
O E E
, K G D JE
LK PA
K s X o s   BsX o s   s 2 M  X i s   X o s 

TY IN R
SI ER TTE
M
K f

X o s 

ER E A
K
 2

IV IN H
s X i  s  s  2 s  1
N G C
2
x
+
y U N A 2n n
R L E AV
+ _
0 0
PU A IT

and K  2 cm/cm/s 2 
Ks B 1
n  ,  
M

M 2 KsM n
AV I A

E o s  KK e
C

Output: eo  K e xo Acceleration to Voltage T.F. : 2  2

s X i s  s 2
D TR

 s 1
n n
JA EC

2
EL

Amitava Chatterjee
17
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Accelerometers

D T
 Kq  1 

IN EN
  s  
Eo s   C 

IA
2

 2 

A , TM
The T.F. of our system: 2  n

s X i s   s  1  s 2 
 2  s  1 

AT R
O E E

   n  n

, K G D JE
LK PA

 Kq 

TY IN R
  s 

SI ER TTE
 C  appears due to cable, buffer amplifier etc.
 s 1
1 

ER E A
 
 

IV IN H
N G C
U N A
R L E AV
 The low frequency response of this accelerometer is limited by the piezoelectric
s .
PU A IT

characteristic
s  1
M
AV I A

 The high frequency response is limited by mechanical resonance.

C
D TR
JA EC
EL

Amitava Chatterjee
18
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Accelerometers

D T
IN EN
IA
 The accurate frequency range of such accelerometers, for flat amplitude
response within a specified percentage, is 3     n .

A , TM


AT R
O E E
5

, K G D JE
LK PA
(5% high at high frequency end and 5% low at low frequency end)

TY IN R
SI ER TTE
Using magnitude response of the piezoelectric transducer:

ER E A
IV IN H
N G C
U N A
R L E AV
3.04 3
1  
PU A IT

or
 
M
AV I A
C

 The damping ratio  of piezoelectric accelerometers is extremely low (almost

D TR

zero for most practical purposes).

JA EC
EL

Amitava Chatterjee
19
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Accelerometers

D T
IN EN
The Construction: Frequency Response:

IA
A , TM
AT R
O E E
, K G D JE
LK PA
top
p cover
(cap)

TY IN R
SI ER TTE
eo
 j 
lead wire attached to the
hemispherical
upper plated surface of
the crystal
spring 
xi Flat + 5%

ER E A
IV IN H
crystal used in usable range

N G C
Mass compression

U N A 3 n n

R L E AV
5
output
eo
 j 
PU A IT

outer
metal frame

xi 90o
M


AV I A

xi
C

- 180o
metallic case serves as
rigidly fastened
D TR

one of the electrodes

and lead wires
JA EC
EL

Amitava Chatterjee
20
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Piezoelectric Accelerometers

D T
IN EN
 Accurate low frequency response requires large , which

IA
is usually

A , TM
achieved by use of high impedance amplifiers (e.g. instrumentation

AT R
O E E
amplifiers or charge amplifiers)
amplifiers).

, K G D JE
LK PA
TY IN R
SI ER TTE
Use of a Buffer Amplifier Stage:

ER E A
IV IN H
N G C
U N A
R L E AV
PU A ITM

PZE emitter
AV I A

amplifier
Input transducer f
follower Output
C

signal
D TR

signal
JA EC
EL

Amitava Chatterjee
21
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Charge Amplifier
current
c f eo
current
cf
K q xi ia  0

Fig (a) gives the ideal form:

D T
_

IN EN
charge +
 q  K q xi
Assumption: input voltage eai and

IA
C
eai  0

A , TM
ic  0 eo
current
current ia of the op-amp ≈ 0.  i  K q xi  eai  0 

AT R
O E E
, K G D JE
LK PA
CC =capacitance of
dx
d de
d K x capacitance
p of

K q i  C f o eo   q i
crystal and and
crystal cablecable

TY IN R
dt dt Cf Rf

SI ER TTE
cf

Fig (b) gives the practical ckt.:

ckt : _

ER E A
+

IV IN H
E o s  sK
C

N G C
sK
  , eo

X i s  1  s U N A 1
s
R L E AV

PU A IT

K
M

K  q (V/m),   R f C f (sec) eo
 j 
AV I A

Cf xi
C

Amplitude response:
D TR


JA EC
EL

Amitava Chatterjee
22
Department of Electrical Engg., Jadavpur University, Kolkata, India
 Charge Amplifier
An Alternate Representation:

D T
IN EN
equivalent circuit
for PZE transducer

IA
Cf

A , TM
 Here, the output of the capacitive _
eo
transducer is represented by an

AT R
O E E
Ct +
Ct


, K G D JE
LK PA
equivalent circuit,
circuit consisting of a voltage Cf
et

TY IN R
et
source et in series with a capacitance Ct.

SI ER TTE
stray capacitance
is uncharged

 Ct 

ER E A
The amplifier output: eo   et

IV IN H
C 
 f 
N G C
to prevent drift into
Rf saturation

U N A
R L E AV
R1
 The presence of Rf limits the lower cf
_
PU A IT

bandwidth limit of the charge amplifier eo

M

Ct +
to the frequency: jCt R f
AV I A

eo   et
1 et 1  jC f R f
fL  1  j  Ct  C f  R f
C

2C f R f 1

D TR

 1  j R f C f
JA EC
EL

Amitava Chatterjee
23
Department of Electrical Engg., Jadavpur University, Kolkata, India
 EL
JA EC
D TR
AV I A
C
PU A ITM
R L E AV
U N A
N G C
IV IN H
ER E A
SI ER TTE
TY IN R
, K G D JE
O E E
LK PA
AT R
A , TM
IN EN
D T
IA
24