Aula 6 - Segunda Parte
Aula 6 - Segunda Parte
Piezoelectric Sensors
April 2022
Piezoelectric effect
●
The word comes from the Greek "piezo", which means pressure
●
Effect discovered in 1880 by the Curie brothers in quartz crystals.
●
It translates into the appearance of an electric voltage between the faces of some
crystals when they are pressed.
●
Conversely, when an electric voltage is applied between the faces of a piezoelectric
crystal, it undergoes mechanical deformation.
●
The effect is explained by the displacement of ions in crystals with cells of the
asymmetric type crystal structure.
●
Given the regularity of the crystalline structure, these effects accumulate, causing the
distribution of electrical charges of opposite signal in opposite faces of the crystal.
These charges can be determined by measuring the potential difference between
electrodes placed on these faces.
●
Conversely, when an external electric field is applied to the crystal, the ions in each
cell are displaced by electrostatic forces, resulting in the mechanical deformation of
the entire crystal.
PVDF 13 18.2
q x =d xy F y
a
Piezoelectric
where b is the dimension according to material
the neutral axis, a is the dimension Force
along the axis of charge generation
and dxy is the corresponding
piezoelectric coefficient.
q x =d xx F x n
Conductive
Surface
where dxx is the piezoelectric coefficient Force
q x =2 d xx F x n
+ Force kF/C
Generated
Cs Rs o F
charge
q = kF
−
● The time constant will be τ = RsCs, which is usually in the order of a few seconds
F v Amplifier
Cable
Crystal
+
Generated iAmplifier = 0
charge Rs Cs Cc Ca Ra o
q = kF
−
q=kF
iR i a= 0
+ dq dF
Generated is iC i s = =k
current C R o
dt dt
is = kdF/dt i s =i c +i R
−
1
R = Ra Rs /(Ra+ Rs ) » Ra v o =v c = ∫ i c dt
C = Cs + Cc + Ca C
Rs – sensor leakage resistance dv o dF v o
Cs – sensor capacitance
i s −i R =C =k −
dt dt R
Cc – connection cable capacitance
Ca – input amplifier capacitance
V o ( jω ) jωτ
=k s
Ra – input amplifier resistance F( jω) 1+ j ω τ
q – charge generated by piezoelectric effect
where τ=RC ; k s =k /C
M. V. Correia Piezoelectric Sensors, 10
Low frequency response
Example: Piezoelectric sensor with capacitance
|Vo/F |
Cs=500pF, leakage resistance 10GΩ and amplifier
with input resistance 5MΩ and negligible input ks
capacitance: k /√2
s
V o( j ω) jωτ
=k s
F( j ω) 1+ j ω τ
To decrease fc we can increase the input
resistance of the amplifier or use a charge
amplifier. 0 ωc ω
1 1
f c= = =64 Hz
2 π RC 2 π (10 G Ω // 5 M Ω )500 pF
Cm Cs Rt
Rm
Useful
range
fc Frequency
●
Due to the phenomenon of mechanical resonance the equivalent circuits for the high
frequencies of the piezoelectric crystals are complex.
●
A widely used model is to add an RLC resonant circuit in parallel to the previous model.
●
In the resulting frequency response curve, the operating zone is indicated.
●
In certain applications these crystals may be used in the resonance zone when it is
desired to control the frequency accurately (for example in crystal oscillator circuits).
is
Cg
is
-
iC iR
C
o
R
is = KdF/dt
+
t t
1 1 kdF −kF
If R g →∞ ; v 0=− ∫ i (t )dt =− ∫ dt =
Cg 0 s C g 0 dt Cg
●
The output voltage is proportional to the applied force F.
●
The circuit has a high-pass behavior with a time constant τ = RgCg
controlled by the circuit designer t
−k F − R Cg
v 0 (t )= e g
Cg
M. V. Correia Piezoelectric Sensors, 13
Piezoelectric force sensor
●
A disc of piezoelectric material is placed
between two plates and the assembly is
tightened rigidly and subjected to a pre-
stress.
●
In addition to ensuring the intimate contact
between the plates and the piezo crystal,
prestressing ensures the operation of the
system either by compression or by traction.