ATF-54143

Low Noise Enhancement Mode Pseudomorphic HEMT

in a Surface Mount Plastic Package

Data Sheet

Description Features
Avago Technologies’ ATF-54143 is a high dynamic range,  High linearity performance
low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343)  Enhancement Mode Technology [1]
surface mount plastic package.  Low noise figure
The combination of high gain, high linearity and low  Excellent uniformity in product specifications
noise makes the ATF-54143 ideal for cellular/PCS base  800 micron gate width
stations, MMDS, and other systems in the 450 MHz to 6
GHz frequency range.  Low cost surface mount small plastic package SOT-
343 (4 lead SC-70)
Surface Mount Package SOT-343  Tape-and-Reel packaging option available
 Lead-free option available.
Specifications
 2 GHz; 3V, 60 mA (Typ.)
 36.2 dBm output 3rd order intercept
Pin Connections and Package Marking  20.4 dBm output power at 1 dB gain compression
 0.5 dB noise figure
DRAIN  16.6 dB associated gain
4Fx

SOURCE

Applications
SOURCE GATE
 Low noise amplifier for cellular/PCS base stations
 LNA for WLAN, WLL/RLL and MMDS applications
Note:
Top View. Package marking provides orientation and identification  General purpose discrete E-PHEMT for other ultra low
noise applications
“4F” = Device Code Note:
“x” = Date code character 1. Enhancement mode technology requires positive Vgs, thereby
identifies month of manufacture. eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.

Attention: Observe precautions for

handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
ATF-54143 Absolute Maximum Ratings [1]
Absolute
Symbol Parameter Units Maximum
VDS Drain - Source Voltage [2] V 5
VGS Gate - Source Voltage [2] V -5 to 1
VGD Gate Drain Voltage [2] V -5 to 1
IDS Drain Current[2] mA 120
Pdiss Total Power Dissipation[3] mW 725
Pin max. (ON mode) RF Input Power (Vds=3V, Ids=60mA) dBm 20 [5]
Pin max. (OFF mode) RF Input Power (Vd=0, Ids=0A) dBm 20
IGS Gate Source Current mA 2 [5]
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
θjc Thermal Resistance [4] °C/W 162
Notes: 120
1. Operation of this device in excess of any one of these parameters 0.7V
may cause permanent damage. 100
2. Assumes DC quiescent conditions.
0.6V
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for TL > 33°C. 80
IDS (mA)

4. Thermal resistance measured using 150°C Liquid Crystal Measure-

ment method. 60
5. The device can handle +20 dBm RF Input Power provided IGS is 0.5V
limited to 2 mA. IGS at P1dB drive level is bias circuit dependent. 40
See application section for additional information.
20 0.4V
0.3V
0
0 1 2 3 4 5 6 7
VDS (V)

Figure 1. Typical I-V Curves.

(VGS = 0.1 V per step)

Product Consistency Distribution Charts [6, 7]

160 200 160
Cpk = 0.77 Cpk = 1.35 Cpk = 1.67
Stdev = 1.41 Stdev = 0.4 Stdev = 0.073
160
120 120

120
-3 Std -3 Std +3 Std +3 Std
80 80
80

40 40
40

0 0 0
30 32 34 36 38 40 42 14 15 16 17 18 19 0.25 0.45 0.65 0.85 1.05
OIP3 (dBm) GAIN (dB) NF (dB)

Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA. Figure 3. Gain @ 2 GHz, 3 V, 60 mA. Figure 4. NF @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575 USL = 18.5, LSL = 15, Nominal = 16.6 USL = 0.9, Nominal = 0.49

Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.

2
ATF-54143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition Units Min. Typ.[2] Max.

Vgs Operational Gate Voltage Vds = 3V, Ids = 60 mA V 0.4 0.59 0.75
Vth Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52
Idss Saturated Drain Current Vds = 3V, Vgs = 0V μA — 1 5
Gm Transconductance Vds = 3V, gm = ΔIdss/ΔVgs; mmho 230 410 560
ΔVgs = 0.75 - 0.7 = 0.05V
Igss Gate Leakage Current Vgd = Vgs = -3V μA — — 200
NF Noise Figure[1] f = 2 GHz Vds = 3V, Ids = 60 mA dB — 0.5 0.9
f = 900 MHz Vds = 3V, Ids = 60 mA dB — 0.3 —
Ga Associated Gain[1] f = 2 GHz Vds = 3V, Ids = 60 mA dB 15 16.6 18.5
f = 900 MHz Vds = 3V, Ids = 60 mA dB — 23.4 —
OIP3 Output 3rd Order f = 2 GHz Vds = 3V, Ids = 60 mA dBm 33 36.2 —
Intercept Point[1] f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 35.5 —
P1dB 1dB Compressed f = 2 GHz Vds = 3V, Ids = 60 mA dBm — 20.4 —
Output Power[1] f = 900 MHz Vds = 3V, Ids = 60 mA dBm — 18.4 —
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.

Input 50 Ohm Input Output 50 Ohm Output

Transmission Matching Circuit Matching Circuit Transmission
Line Including Γ_mag = 0.30 DUT Γ_mag = 0.035 Line Including
Gate Bias T Γ_ang = 150° Γ_ang = -71° Drain Bias T
(0.3 dB loss) (0.3 dB loss) (0.4 dB loss) (0.3 dB loss)

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measure-
ments.

3
ATF-54143 Typical Performance Curves
0.7 0.6 19

18
0.5
0.6
17
0.4

GAIN (dB)
Fmin (dB)

Fmin (dB)
0.5
16
0.3
0.4 15
0.2
14
0.3 3V
3V 3V
4V 0.1 13
4V 4V

0.2 0 12
0 20 40 60 80 100 0 20 40 60 80 100 0 20 40 60 80 100
Ids (mA) Ids (mA) Ids (mA)

Figure 6. Fmin vs. Ids and Vds Tuned for Figure 7. Fmin vs. Ids and Vds Tuned for Figure 8. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz. Max OIP3 and Min NF at 900 MHz. Max OIP3 and Fmin at 2 GHz.

25 42 40

24 37
35
23
32
OIP3 (dBm)

OIP3 (dBm)
GAIN (dB)

30
22
27
21 25
22
20
3V 20 3V
3V 17 4V 4V
19 4V

18 12 15
0 20 40 60 80 100 0 20 40 60 80 100 0 20 40 60 80 100
Ids (mA) Ids (mA) Ids (mA)

Figure 9. Gain vs. Ids and Vds Tuned for Figure 10. OIP3 vs. Ids and Vds Tuned for Figure 11. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz. Max OIP3 and Fmin at 2 GHz. Max OIP3 and Fmin at 900 MHz.

24 23 35

22 25 C
22 30 -40 C
21 85 C
20 25
P1dB (dBm)

P1dB (dBm)

20
GAIN (dB)

18 19 20

18
16 15
3V
17 4V
3V
14 4V
10
16

12 15 5
0 20 40 60 80 100 0 20 40 60 80 100 0 1 2 3 4 5 6
Idq (mA)[1] Idq (mA)[1] FREQUENCY (GHz)

Figure 12. P1dB vs. Idq and Vds Tuned for Figure 13. P1dB vs. Idq and Vds Tuned for Figure 14. Gain vs. Frequency and Temp
Max OIP3 and Fmin at 2 GHz. Max OIP3 and Fmin at 900 MHz. Tuned for Max OIP3 and Fmin at 3V, 60 mA.

Notes:
1. Idq represents the quiescent drain current without RF drive applied. Under low values of Ids, the application of RF drive will cause Id to increase
substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.

4
ATF-54143 Typical Performance Curves, continued
2 45 21
25 C
-40 C 40 20.5
85 C
1.5 20
35

P1dB (dBm)
OIP3 (dBm)
19.5
Fmin (dB)

30
1.0 19
25
18.5
20
0.5 25 C
18
25 C
-40 C -40 C
15 17.5
85 C 85 C
0 10 17
0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 1 2 3 4 5 6
FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz)

Figure 15. Fmin[2] vs. Frequency and Temp Figure 16. OIP3 vs. Frequency and Temp Figure 17. P1dB vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA. Tuned for Max OIP3 and Fmin at 3V, 60 mA. Tuned for Max OIP3 and Fmin at 3V, 60 mA.

1.4

1.2

1.0
Fmin (dB)

0.8

0.6

0.4 60 mA
40 mA
0.2 80 mA

0
0 1 2 3 4 5 6 7
FREQUENCY (GHz)

Figure 18. Fmin[1] vs. Frequency and Ids

at 3V.

ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3, VDS = 3V, IDS = 60 mA
Freq ΓOut_Mag.[1] ΓOut_Ang.[2] OIP3 P1dB
(GHz) (Mag) (Degrees) (dBm) (dBm)
0.9 0.017 115 35.54 18.4
2.0 0.026 -85 36.23 20.38
3.9 0.013 173 37.54 20.28
5.8 0.025 102 35.75 18.09
Note:
1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.

5
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 40 mA
Freq. S11 S21 S12 S22 MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.99 -17.6 27.99 25.09 168.5 0.009 80.2 0.59 -12.8 34.45
0.5 0.83 -76.9 25.47 18.77 130.1 0.036 52.4 0.44 -54.6 27.17
0.9 0.72 -114 22.52 13.37 108 0.047 40.4 0.33 -78.7 24.54
1.0 0.70 -120.6 21.86 12.39 103.9 0.049 38.7 0.31 -83.2 24.03
1.5 0.65 -146.5 19.09 9.01 87.4 0.057 33.3 0.24 -99.5 21.99
1.9 0.63 -162.1 17.38 7.40 76.6 0.063 30.4 0.20 -108.6 20.70
2.0 0.62 -165.6 17.00 7.08 74.2 0.065 29.8 0.19 -110.9 20.37
2.5 0.61 178.5 15.33 5.84 62.6 0.072 26.6 0.15 -122.6 19.09
3.0 0.61 164.2 13.91 4.96 51.5 0.080 22.9 0.12 -137.5 17.92
4.0 0.63 138.4 11.59 3.80 31 0.094 14 0.10 176.5 15.33
5.0 0.66 116.5 9.65 3.04 11.6 0.106 4.2 0.14 138.4 12.99
6.0 0.69 97.9 8.01 2.51 -6.7 0.118 -6.1 0.17 117.6 11.50
7.0 0.71 80.8 6.64 2.15 -24.5 0.128 -17.6 0.20 98.6 10.24
8.0 0.72 62.6 5.38 1.86 -42.5 0.134 -29.3 0.22 73.4 8.83
9.0 0.76 45.2 4.20 1.62 -60.8 0.145 -40.6 0.27 52.8 8.17
10.0 0.83 28.2 2.84 1.39 -79.8 0.150 -56.1 0.37 38.3 8.57
11.0 0.85 13.9 1.42 1.18 -96.9 0.149 -69.3 0.45 25.8 7.47
12.0 0.88 -0.5 0.23 1.03 -112.4 0.150 -81.6 0.51 12.7 7.50
13.0 0.89 -15.1 -0.86 0.91 -129.7 0.149 -95.7 0.54 -4.1 6.60
14.0 0.87 -31.6 -2.18 0.78 -148 0.143 -110.3 0.61 -20.1 4.57
15.0 0.88 -46.1 -3.85 0.64 -164.8 0.132 -124 0.65 -34.9 3.47
16.0 0.87 -54.8 -5.61 0.52 -178.4 0.121 -134.6 0.70 -45.6 2.04
17.0 0.87 -62.8 -7.09 0.44 170.1 0.116 -144.1 0.73 -55.9 1.05
18.0 0.92 -73.6 -8.34 0.38 156.1 0.109 -157.4 0.76 -68.7 1.90

Typical Noise Parameters, VDS = 3V, IDS = 40 mA

40
Freq Fmin Γopt Γopt Rn/50 Ga 35
GHz dB Mag. Ang. dB 30
MSG/MAG and S21 (dB)

0.5 0.17 0.34 34.80 0.04 27.83 25 MSG

20
0.9 0.22 0.32 53.00 0.04 23.57
15 MAG
1.0 0.24 0.32 60.50 0.04 22.93
10
1.9 0.42 0.29 108.10 0.04 18.35 5
S21
2.0 0.45 0.29 111.10 0.04 17.91 0
2.4 0.51 0.30 136.00 0.04 16.39 -5
10
3.0 0.59 0.32 169.90 0.05 15.40
-15
3.9 0.69 0.34 -151.60 0.05 13.26 0 5 10 15 20
5.0 0.90 0.45 -119.50 0.09 11.89 FREQUENCY (GHz)

5.8 1.14 0.50 -101.60 0.16 10.95 Figure 19. MSG/MAG and |S21|2 vs.
6.0 1.17 0.52 -99.60 0.18 10.64 Frequency at 3V, 40 mA.
7.0 1.24 0.58 -79.50 0.33 9.61
8.0 1.57 0.60 -57.90 0.56 8.36
9.0 1.64 0.69 -39.70 0.87 7.77
10.0 1.8 0.80 -22.20 1.34 7.68
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

6
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA
Freq. S11 S21 S12 S22 MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.99 -18.9 28.84 27.66 167.6 0.01 80.0 0.54 -14.0 34.42
0.5 0.81 -80.8 26.04 20.05 128.0 0.03 52.4 0.40 -58.8 28.25
0.9 0.71 -117.9 22.93 14.01 106.2 0.04 41.8 0.29 -83.8 25.44
1.0 0.69 -124.4 22.24 12.94 102.2 0.05 40.4 0.27 -88.5 24.13
1.5 0.64 -149.8 19.40 9.34 86.1 0.05 36.1 0.21 -105.2 22.71
1.9 0.62 -164.9 17.66 7.64 75.6 0.06 33.8 0.17 -114.7 21.05
2.0 0.62 -168.3 17.28 7.31 73.3 0.06 33.3 0.17 -117.0 20.86
2.5 0.60 176.2 15.58 6.01 61.8 0.07 30.1 0.13 -129.7 19.34
3.0 0.60 162.3 14.15 5.10 51.0 0.08 26.5 0.11 -146.5 18. 04
4.0 0.62 137.1 11.81 3.90 30.8 0.09 17.1 0.10 165.2 1 4.87
5.0 0.66 115.5 9.87 3.11 11.7 0.11 6.8 0.14 131.5 13.27
6.0 0.69 97.2 8.22 2.58 -6.4 0.12 -3.9 0.18 112.4 11.72
7.0 0.70 80.2 6.85 2.20 -24.0 0.13 -15.8 0.20 94.3 10.22
8.0 0.72 62.2 5.58 1.90 -41.8 0.14 -28.0 0.23 70.1 9.02
9.0 0.76 45.0 4.40 1.66 -59.9 0.15 -39.6 0.29 50.6 8.38
10.0 0.83 28.4 3.06 1.42 -78.7 0.15 -55.1 0.38 36.8 8.71
11.0 0.85 13.9 1.60 1.20 -95.8 0.15 -68.6 0.46 24.4 7.55
12.0 0.88 -0.2 0.43 1.05 -111.1 0.15 -80.9 0.51 11.3 7.55
13.0 0.89 -14.6 -0.65 0.93 -128.0 0.15 -94.9 0.55 -5.2 6.70
14.0 0.88 -30.6 -1.98 0.80 -146.1 0.14 -109.3 0.61 -20.8 5.01
15.0 0.88 -45.0 -3.62 0.66 -162.7 0.13 -122.9 0.66 -35.0 3.73
16.0 0.88 -54.5 -5.37 0.54 -176.6 0.12 -133.7 0.70 -45.8 2.54
17.0 0.88 -62.5 -6.83 0.46 171.9 0.12 -143.2 0.73 -56.1 1.57
18.0 0.92 -73.4 -8.01 0.40 157.9 0.11 -156.3 0.76 -68.4 2.22

Typical Noise Parameters, VDS = 3V, IDS = 60 mA

40
Freq Fmin Γopt Γopt Rn/50 Ga 35
GHz dB Mag. Ang. dB 30
MSG/MAG and S21 (dB)

25 MSG
0.5 0.15 0.34 42.3 0.04 28.50
20
0.9 0.20 0.32 62.8 0.04 24.18 15 MAG
1.0 0.22 0.32 67.6 0.04 23.47 10
1.9 0.42 0.27 116.3 0.04 18.67 5
S21
2.0 0.45 0.27 120.1 0.04 18.29 0
-5
2.4 0.52 0.26 145.8 0.04 16.65
10
3.0 0.59 0.29 178.0 0.05 15.56 -15
3.9 0.70 0.36 -145.4 0.05 13.53 0 5 10 15 20
FREQUENCY (GHz)
5.0 0.93 0.47 -116.0 0.10 12.13
5.8 1.16 0.52 -98.9 0.18 11.10 Figure 20. MSG/MAG and |S21|2 vs.
Frequency at 3V, 60 mA.
6.0 1.19 0.55 -96.5 0.20 10.95
7.0 1.26 0.60 -77.1 0.37 9.73
8.0 1.63 0.62 -56.1 0.62 8.56
9.0 1.69 0.70 -38.5 0.95 7.97
10.0 1.73 0.79 -21.5 1.45 7.76
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

7
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 80 mA
Freq. S11 S21 S12 S22 MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.98 -20.4 28.32 26.05 167.1 0.01 79.4 0.26 -27.6 34.16
0.5 0.80 -85.9 25.32 18.45 126.8 0.04 53.3 0.29 -104.9 26.64
0.9 0.72 -123.4 22.10 12.73 105.2 0.05 43.9 0.30 -138.8 24.06
1.0 0.70 -129.9 21.40 11.75 101.3 0.05 42.7 0.30 -144.3 23.71
1.5 0.66 -154.6 18.55 8.46 85.4 0.06 38.6 0.30 -165.0 21.49
1.9 0.65 -169.5 16.81 6.92 74.9 0.07 35.7 0.29 -177.6 19.95
2.0 0.64 -172.8 16.42 6.62 72.6 0.07 35.0 0.29 179.4 19.76
2.5 0.64 172.1 14.69 5.42 61.1 0.09 30.6 0.29 164.4 17.80
3.0 0.63 158.5 13.24 4.59 50.1 0.10 25.5 0.29 150.2 16.62
4.0 0.66 133.8 10.81 3.47 29.9 0.12 13.4 0.33 126.1 14.61
5.0 0.69 112.5 8.74 2.74 11.1 0.13 1.2 0.39 107.8 12.03
6.0 0.72 94.3 7.03 2.25 -6.5 0.14 -11.3 0.42 91.8 10.52
7.0 0.73 77.4 5.63 1.91 -23.5 0.15 -24.5 0.44 75.5 9.12
8.0 0.74 59.4 4.26 1.63 -41.1 0.16 -38.1 0.47 55.5 7.78
9.0 0.78 42.1 2.98 1.41 -58.7 0.17 -51.1 0.52 37.8 7.12
10.0 0.84 25.6 1.51 1.19 -76.4 0.16 -66.8 0.59 24.0 6.96
11.0 0.86 11.4 0.00 1.00 -92.0 0.16 -79.8 0.64 11.8 6.11
12.0 0.88 -2.6 -1.15 0.88 -105.9 0.16 -91.7 0.68 -0.8 5.67
13.0 0.89 -17.0 -2.18 0.78 -121.7 0.15 -105.6 0.70 -16.7 5.08
14.0 0.87 -33.3 -3.48 0.67 -138.7 0.14 -119.5 0.73 -31.7 3.67
15.0 0.87 -47.3 -5.02 0.56 -153.9 0.13 -132.3 0.76 -44.9 2.65
16.0 0.86 -55.6 -6.65 0.47 -165.9 0.12 -141.7 0.78 -54.9 1.48
17.0 0.86 -63.4 -7.92 0.40 -175.9 0.11 -150.4 0.79 -64.2 0.49
18.0 0.91 -74.2 -8.92 0.36 171.2 0.10 -163.0 0.81 -76.2 1.29

Typical Noise Parameters, VDS = 3V, IDS = 80 mA

40
Freq Fmin Γopt Γopt Rn/50 Ga 35
GHz dB Mag. Ang. dB 30
MSG
MSG/MAG and S21 (dB)

25
0.5 0.19 0.23 66.9 0.04 27.93
20
0.9 0.24 0.24 84.3 0.04 24.13 15
MAG
1.0 0.25 0.25 87.3 0.04 23.30 10
S21
1.9 0.43 0.28 134.8 0.04 18.55 5
0
2.0 0.42 0.29 138.8 0.04 18.15
-5
2.4 0.51 0.30 159.5 0.03 16.44 10
3.0 0.61 0.35 -173 0.03 15.13 -15
0 5 10 15 20
3.9 0.70 0.41 -141.6 0.06 12.97
FREQUENCY (GHz)
5.0 0.94 0.52 -113.5 0.13 11.42
Figure 21. MSG/MAG and |S21|2 vs.
5.8 1.20 0.56 -97.1 0.23 10.48
Frequency at 3V, 80 mA.
6.0 1.26 0.58 -94.8 0.26 10.11
7.0 1.34 0.62 -75.8 0.46 8.86
8.0 1.74 0.63 -55.5 0.76 7.59
9.0 1.82 0.71 -37.7 1.17 6.97
10.0 1.94 0.79 -20.8 1.74 6.65
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-54143 Typical Scattering Parameters, VDS = 4V, IDS = 60 mA
Freq. S11 S21 S12 S22 MSG/MAG
GHz Mag. Ang. dB Mag. Ang. Mag. Ang. Mag. Ang. dB
0.1 0.99 -18.6 28.88 27.80 167.8 0.01 80.1 0.58 -12.6 34.44
0.5 0.81 -80.2 26.11 20.22 128.3 0.03 52.4 0.42 -52.3 28.29
0.9 0.71 -117.3 23.01 14.15 106.4 0.04 41.7 0.31 -73.3 25.49
1.0 0.69 -123.8 22.33 13.07 102.4 0.04 40.2 0.29 -76.9 25.14
1.5 0.64 -149.2 19.49 9.43 86.2 0.05 36.1 0.22 -89.4 22.76
1.9 0.62 -164.5 17.75 7.72 75.7 0.06 34.0 0.18 -95.5 21.09
2.0 0.61 -167.8 17.36 7.38 73.3 0.06 33.5 0.18 -97.0 20.90
2.5 0.60 176.6 15.66 6.07 61.9 0.07 30.7 0.14 -104.0 19.38
3.0 0.60 162.6 14.23 5.15 51.1 0.07 27.3 0.11 -113.4 18.67
4.0 0.62 137.4 11.91 3.94 30.9 0.09 18.7 0.07 -154.7 15.46
5.0 0.65 115.9 10.00 3.16 11.7 0.10 9.0 0.09 152.5 13.20
6.0 0.68 97.6 8.36 2.62 -6.6 0.11 -1.4 0.12 127.9 11.73
7.0 0.70 80.6 7.01 2.24 -24.3 0.12 -12.9 0.15 106.9 10.47
8.0 0.72 62.6 5.76 1.94 -42.3 0.13 -24.7 0.17 78.9 9.31
9.0 0.76 45.4 4.60 1.70 -60.5 0.14 -36.1 0.23 56.8 8.69
10.0 0.83 28.5 3.28 1.46 -79.6 0.15 -51.8 0.32 42.1 9.88
11.0 0.86 14.1 1.87 1.24 -97.0 0.15 -65.4 0.41 29.4 9.17
12.0 0.88 -0.4 0.69 1.08 -112.8 0.15 -78.0 0.47 16.0 8.57
13.0 0.90 -14.9 -0.39 0.96 -130.2 0.15 -92.2 0.51 -1.1 8.06
14.0 0.87 -31.4 -1.72 0.82 -148.8 0.15 -107.3 0.58 -17.6 4.90
15.0 0.88 -46.0 -3.38 0.68 -166.0 0.14 -121.2 0.63 -32.6 3.86
16.0 0.88 -54.8 -5.17 0.55 179.8 0.13 -132.2 0.69 -43.7 2.65
17.0 0.87 -62.8 -6.73 0.46 168.4 0.12 -142.3 0.72 -54.2 1.33
18.0 0.92 -73.7 -7.93 0.40 154.3 0.11 -155.6 0.75 -67.2 2.26

Typical Noise Parameters, VDS = 4V, IDS = 60 mA

40
Freq Fmin Γopt Γopt Rn/50 Ga 35
GHz dB Mag. Ang. dB 30
MSG/MAG and S21 (dB)

25 MSG
0.5 0.17 0.33 34.30 0.03 28.02
20
0.9 0.25 0.31 60.30 0.04 24.12 15 MAG
MSG
1.0 0.27 0.31 68.10 0.04 23.43 10
S21 MAG
1.9 0.45 0.27 115.00 0.04 18.72 5

2.0 0.49 0.27 119.80 0.04 18.35 0

-5
2.4 0.56 0.26 143.50 0.04 16.71
10
3.0 0.63 0.28 176.80 0.04 15.58 -15
3.9 0.73 0.35 -145.90 0.05 13.62 0 5 10 15 20
FREQUENCY (GHz)
5.0 0.96 0.47 -116.20 0.11 12.25
5.8 1.20 0.52 -98.80 0.19 11.23 Figure 22. MSG/MAG and |S21|2 vs.
Frequency at 4V, 60 mA.
6.0 1.23 0.54 -96.90 0.21 11.02
7.0 1.33 0.60 -77.40 0.38 9.94
8.0 1.66 0.63 -56.20 0.64 8.81
9.0 1.71 0.71 -38.60 0.99 8.22
10.0 1.85 0.82 -21.30 1.51 8.12
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.

9
ATF-54143 Applications Information also provide a termination for low frequency mixing
products. These mixing products are as a result of two
Introduction or more in-band signals mixing and producing third
Avago Technologies’ ATF-54143 is a low noise order in-band distortion products. The low frequency or
enhancement mode PHEMT designed for use in low difference mixing products are bypassed by C3 and C6.
cost commercial applications in the VHF through 6 GHz For best suppression of third order distortion products
frequency range. As opposed to a typical depletion based on the CDMA 1.25 MHz signal spacing, C3 and C6
mode PHEMT where the gate must be made negative should be 0.1 μF in value. Smaller values of capacitance
with respect to the source for proper operation, an will not suppress the generation of the 1.25 MHz differ-
enhancement mode PHEMT requires that the gate ence signal and as a result will show up as poorer two
be made more positive than the source for normal tone IP3 results.
operation. Therefore a negative power supply voltage is Bias Networks
not required for an enhancement mode device. Biasing
an enhancement mode PHEMT is much like biasing the One of the major advantages of the enhancement mode
typical bipolar junction transistor. Instead of a 0.7V base technology is that it allows the designer to be able to dc
to emitter voltage, the ATF-54143 enhancement mode ground the source leads and then merely apply a positive
PHEMT requires about a 0.6V potential between the voltage on the gate to set the desired amount of quiescent
gate and source for a nominal drain current of 60 mA. drain current Id.

Matching Networks Whereas a depletion mode PHEMT pulls maximum

drain current when Vgs = 0V, an enhancement mode
The techniques for impedance matching an en- PHEMT pulls only a small amount of leakage current
hancement mode device are very similar to those for when Vgs=0V. Only when Vgs is increased above Vto,
matching a depletion mode device. The only difference the device threshold voltage, will drain current start to
is in the method of supplying gate bias. S and Noise flow. At a Vds of 3V and a nominal Vgs of 0.6V, the drain
Parameters for various bias conditions are listed in current Id will be approximately 60 mA. The data sheet
this data sheet. The circuit shown in Figure 23 shows a suggests a minimum and maximum Vgs over which
typical LNA circuit normally used for 900 and 1900 MHz the desired amount of drain current will be achieved.
applications (Consult the Avago Technologies website It is also important to note that if the gate terminal is
for application notes covering specific applications). left open circuited, the device will pull some amount of
High pass impedance matching networks consisting drain current due to leakage current creating a voltage
of L1/C1 and L4/C4 provide the appropriate match for differential between the gate and source terminals.
noise figure, gain, S11 and S22. The high pass structure
also provides low frequency gain reduction which can Passive Biasing
be beneficial from the standpoint of improving out-of- Passive biasing of the ATF-54143 is accomplished by
band rejection at lower frequencies. the use of a voltage divider consisting of R1 and R2. The
C4 OUTPUT
INPUT C1 voltage for the divider is derived from the drain voltage
Q1 Zo
Zo
which provides a form of voltage feedback through the
L4 J2
use of R3 to help keep drain current constant. Resistor
J1
L1 R5 (approximately 10k) provides current limiting for
L2 L3
the gate of enhancement mode devices such as the
R4
C2 C5 ATF-54143. This is especially important when the device
R3
is driven to P1dB or PSAT.
R5 C3 C6 Resistor R3 is calculated based on desired Vds, Ids and
R1 R2
available power supply voltage.
Vdd

Figure 23. Typical ATF-54143 LNA with Passive Biasing. R3 = VDD – Vds (1)
p
Capacitors C2 and C5 provide a low impedance in-band Ids + IBB
RF bypass for the matching networks. Resistors R3 and
R4 provide a very important low frequency termina- VDD is the power supply voltage.
tion for the device. The resistive termination improves Vds is the device drain to source voltage.
low frequency stability. Capacitors C3 and C6 provide Ids is the desired drain current.
the low frequency RF bypass for resistors R3 and R4.
Their value should be chosen carefully as C3 and C6

10
IBB is the current flowing through the R1/R2 resistor combined series value of these resistors also sets the
voltage divider network. amount of extra current consumed by the bias network.
The values of resistors R1 and R2 are calculated with the The equations that describe the circuit’s operation are
following formulas as follows.

R1 = Vgs (2) VE = Vds + (Ids • R4) (1)

IBB p

VDD – VE (2)
R3 =
Ids p

R2 = (Vds – Vgs) R1 (3)

Vgs VB = VE – VBE (3)

R1 (4)
Example Circuit VB = VDD
R1 + R2 p

VDD = 5 V
Vds = 3V VDD = IBB (R1 + R2) (5)
Ids = 60 mA
Vgs = 0.59V Rearranging equation (4) provides the following
formula:
Choose IBB to be at least 10X the normal expected gate
leakage current. IBB was chosen to be 2 mA for this
example. Using equations (1), (2), and (3) the resistors R1 (VDD – VB) (4A)
R2 =
are calculated as follows VB
R1 = 295
and rearranging equation (5) provides the following
R2 = 1205
formula:
R3 = 32.3

Active Biasing VDD (5A)

R1 =
Active biasing provides a means of keeping the
( )
9

quiescent bias point constant over temperature and IBB 1 + VDD – VB

p

constant over lot to lot variations in device dc per- VB

formance. The advantage of the active biasing of an
enhancement mode PHEMT versus a depletion mode Example Circuit
PHEMT is that a negative power source is not required.
The techniques of active biasing an enhancement VDD = 5V
mode device are very similar to those used to bias a Vds = 3V
bipolar junction transistor. Ids = 60 mA
INPUT C1 C4 OUTPUT R4 = 10
Q1 Zo
Zo
VBE = 0.7 V
L1 L4
L2 L3
Equation (1) calculates the required voltage at the
R5
C2
C5 emitter of the PNP transistor based on desired Vds and
R4 Ids through resistor R4 to be 3.6V. Equation (2) calcu-
C3
lates the value of resistor R3 which determines the
R6
C7 C6 drain current Ids. In the example R3=23.3. Equation
R7
Q2
R3
Vdd (3) calculates the voltage required at the junction of
R1 R2 resistors R1 and R2. This voltage plus the step-up of
the base emitter junction determines the regulated
Figure 24. Typical ATF-54143 LNA with Active Biasing. Vds. Equations (4) and (5) are solved simultaneously
An active bias scheme is shown in Figure 24. R1 and to determine the value of resistors R1 and R2. In the
R2 provide a constant voltage source at the base of a example R1=1450 and R2=1050. R7 is chosen to
PNP transistor at Q2. The constant voltage at the base be 1k. This resistor keeps a small amount of current
of Q2 is raised by 0.7 volts at the emitter. The constant flowing through Q2 to help maintain bias stability. R6 is
emitter voltage plus the regulated VDD supply are chosen to be 10k. This value of resistance is necessary
present across resistor R3. Constant voltage across R3 to limit Q1 gate current in the presence of high RF drive
provides a constant current supply for the drain current. level (especially when Q1 is driven to P1dB gain com-
Resistors R1 and R2 are used to set the desired Vds. The pression point).

11
ATF-54143 Die Model

Advanced_Curtice2_Model
MESFETM1
NFET=yes Rf= Crf=0.1 F N=
PFET=no Gscap=2 Gsfwd= Fnc=1 MHz
Vto=0.3 Cgs=1.73 pF Gsrev= R=0.08
Beta=0.9 Cgd=0.255 pF Gdfwd= P=0.2
Lambda=82e-3
Gdcap=2 Gdrev= C=0.1
Alpha=13
Tau= Fc=0.65 R1= Taumdl=no
Tnom=16.85 Rgd=0.25 Ohm R2= wVgfwd=
Idstc= Rd=1.0125 Ohm Vbi=0.8 wBvgs=
Ucrit=-0.72 Rg=1.0 Ohm Vbr= wBvgd=
Vgexp=1.91 Rs=0.3375 Ohm Vjr= wBvds=
Gamds=1e-4 Ld= Is= wldsmax=
Vtotc= Lg=0.18 nH Ir= wPmax=
Betatce=
Ls= Imax= AllParams=
Rgs=0.25 Ohm
Cds=0.27 pF Xti=
Rc=250 Ohm Eg=

ATF-54143 curtice ADS Model

INSIDE Package

Var VAR
Egn VAR1
K=5 TLINP TLINP
Z2=85 TL1 TL2
Z1=30 Z=Z2/2 Ohm Z=Z2/2 Ohm
L=20 0 mil L=20 0 mil
K=K K=K
C A=0.0000 A=0.0000
C1 GaAsFET
F=1 GHz FET1 F=1 GHz
GATE C=0.13 pF TanD=0.001 Mode1=MESFETM1 TanD=0.001 SOURCE
Mode=Nonlinear
Port L L TLINP TLINP
TLINP TLINP L6 Port
G TL4 TL3 L1 TL7 TL8 S2
Num=1 L=0.477 nH L=0.175 nH Z=Z2/2 Ohm Z=Z1 Ohm
Z=Z1 Ohm Z=Z2 Ohm R=0.001 Num=4
L=15 mil L=25 mil R=0.001 L=5.0 mil L=15.0 mil
K=1 K=K C K=K K=1
A=0.000 A=0.000 C2 A=0.0000 A=0.0000
F=1 GHz F=1 GHz C=0.159 pF F=1 GHz F=1 GHz
TanD=0.001 TanD=0.001 TanD=0.001 TanD=0.001 DRAIN
SOURCE L
L7 TLINP TLINP Port
L=0.746 nH TL5 TL6 D
Port TLINP L
TLINP R=0.001 Z=Z2 Ohm Z=Z1 Ohm Num=3
S1 TL9 L4 MSub
TL10 L=26.0 mil L=15.0 mil
Num=2 Z=Z2 Ohm L=0.4 nH
Z=Z1 Ohm MSUB K=K K=1
L=10.0 mil R=0.001
L=15 mil MSub1 A=0.0000 A=0.0000
K=1 K=K H=25.0 mil F=1 GHz F=1 GHz
A=0.000 A=0.000 Er=9.6 TanD=0.001 TanD=0.001
F=1 GHz F=1 GHz Mur=1
TanD=0.001 TanD=0.001 Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil

12
Designing with S and Noise Parameters and the Non-Linear For Further Information
Model The information presented here is an introduction
The non-linear model describing the ATF-54143 to the use of the ATF-54143 enhancement mode
includes both the die and associated package model. PHEMT. More detailed application circuit information
The package model includes the effect of the pins but is available from Avago Technologies. Consult the web
does not include the effect of the additional source page or your local Avago Technologies sales representa-
inductance associated with grounding the source leads tive.
through the printed circuit board. The device S and
Noise Parameters do include the effect of 0.020 inch
thickness printed circuit board vias. When comparing
simulation results between the measured S parameters
and the simulated non-linear model, be sure to include
the effect of the printed circuit board to get an accurate
comparison. This is shown schematically in Figure 25.

VIA2
V3
D=20.0 mil
H=25.0 mil
VIA2 T=0.15 mil
V1 DRAIN SOURCE Rho=1.0
D=20.0 mil W=40.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0 ATF-54143
W=40.0 mil

VIA2 MSub
V4
D=20.0 mil MSUB
SOURCE GATE H=25.0 mil MSub1
VIA2 T=0.15 mil H=25.0 mil
V2 Rho=1.0 Er=9.6
D=20.0 mil W=40.0 mil Mur=1
H=25.0 mil Cond=1.0E+50
T=0.15 mil Hu=3.9e+034 mil
Rho=1.0 T=0.15 mil
W=40.0 mil TanD=0
Rough=0 mil

Figure 25. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters.

13
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on measure- Typically for FETs, the higher Go usually infers that an
ments while the Fmins below 2 GHz have been extrapo- impedance much higher than 50ý is required for the
lated. The Fmin values are based on a set of 16 noise device to produce Fmin. At VHF frequencies and even
figure measurements made at 16 different impedances lower L Band frequencies, the required impedance can
using an ATN NP5 test system. From these measure- be in the vicinity of several thousand ohms. Matching
ments, a true Fmin is calculated. Fmin represents the true to such a high impedance requires very hi-Q compo-
minimum noise figure of the device when the device is nents in order to minimize circuit losses. As an example
presented with an impedance matching network that at 900 MHz, when airwwound coils (Q>100) are used for
transforms the source impedance, typically 50ý, to an matching networks, the loss can still be up to 0.25 dB
impedance represented by the reflection coefficient Go. which will add directly to the noise figure of the device.
The designer must design a matching network that will Using muiltilayer molded inductors with Qs in the 30
present Go to the device with minimal associated circuit to 50 range results in additional loss over the airwound
losses. The noise figure of the completed amplifier is coil. Losses as high as 0.5 dB or greater add to the
equal to the noise figure of the device plus the losses typical 0.15 dB Fmin of the device creating an amplifier
of the matching network preceding the device. The noise figure of nearly 0.65 dB. A discussion concerning
noise figure of the device is equal to Fmin only when calculated and measured circuit losses and their effect
the device is presented with Go. If the reflection coef- on amplifier noise figure is covered in Avago Technolo-
ficient of the matching network is other than Go, then gies Application 1085.
the noise figure of the device will be greater than Fmin
based on the following equation.

NF = Fmin + 4 Rn |s – o | 2
Zo (|1 + o| 2)(1 - |s| 2)

Where Rn/Zo is the normalized noise resistance, Go is

the optimum reflection coefficient required to produce
Fmin and Gs is the reflection coefficient of the source
impedance actually presented to the device. The losses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. Go is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower Go as compared to narrower gate width devices.

14
Ordering Information
Part Number No. of Devices Container
ATF-54143-TR1G 3000 7” Reel
ATF-54143-TR2G 10000 13”Reel
ATF-54143-BLKG 100 antistatic bag

Package Dimensions Recommended PCB Pad Layout for

Outline 43 (SO%-343/SC70 4 lead) Avago’s SC70 4L/SOT-343 Products
1.30 (.051) 1.30
BSC (0.051)

1.00
(0.039)

HE E
2.00
0.60 (0.079)
(0.024)

1.15 (.045) BSC

b1 0.9
D (0.035)
1.15
(0.045)
mm
A A2 Dimensions in
(inches)

A1
b C
L

DIMENSIONS (mm)
SYMBOL MIN. MAX.
E 1.15 1.35
D 1.85 2.25 NOTES:
HE 1.80 2.40 1. All dimensions are in mm.
A 0.80 1.10 2. Dimensions are inclusive of plating.
A2 0.80 1.00 3. Dimensions are exclusive of mold flash & metal burr.
A1 0.00 0.10 4. All specifications comply to EIAJ SC70.
b 0.15 0.40 5. Die is facing up for mold and facing down for trim/form,
b1 0.55 0.70 ie: reverse trim/form.
c 0.10 0.20 6. Package surface to be mirror finish.
L 0.10 0.46

15
Device Orientation
REEL

4 mm

CARRIER
TAPE 8 mm
4Fx 4Fx 4Fx 4Fx
USER
FEED
DIRECTION TOP VIEW END VIEW
COVER TAPE

Tape Dimensions For Outline 4T

P Po D P2

F
W
C

D1
t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)

10 MAX. Ko 10 MAX.

Ao Bo

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

CAVITY LENGTH Ao 2.40 ± 0.10 0.094 ± 0.004
WIDTH Bo 2.40 ± 0.10 0.094 ± 0.004
DEPTH Ko 1.20 ± 0.10 0.047 ± 0.004
PITCH P 4.00 ± 0.10 0.157 ± 0.004
BOTTOM HOLE DIAMETER D1 1.00 + 0.25 0.039 + 0.010
PERFORATION DIAMETER D 1.55 ± 0.10 0.061 + 0.002
PITCH Po 4.00 ± 0.10 0.157 ± 0.004
POSITION E 1.75 ± 0.10 0.069 ± 0.004
CARRIER TAPE WIDTH W 8.00 + 0.30 - 0.10 0.315 + 0.012
THICKNESS t1 0.254 0.02 0.0100 ± 0.0008
COVER TAPE WIDTH C 5.40 ± 0.10 0.205 + 0.004
TAPE THICKNESS Tt 0.062 ± 0.001 0.0025 ± 0.0004
DISTANCE CAVITY TO PERFORATION F 3.50 ± 0.05 0.138 ± 0.002
(WIDTH DIRECTION)
CAVITY TO PERFORATION P2 2.00 ± 0.05 0.079 ± 0.002
(LENGTH DIRECTION)

For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes AV01-0620EN
AV02-0488EN - June 8, 2012