Makan Chen, E. Tsyplokov, R. Schnell, P. Hong, H. Wang, S.

Klaka, ABB, November, 2016

Power Devices for GW VSC-HVDC Application

Development trend and status with StakPak

© ABB
November, 2016 | Slide 1
Power Device Trend for VSC-HVDC Application

 Brief Overview
 Power device development guideline
 StakPak: Design & Benefit
 IGCT: Potential Benefit
 Future Trend
 Summary

© ABB
November, 2016 | Slide 2
Overview of VSC-HVDC (simplified)
System vs device

Name HVDC Light HVDC Plus HVDC MaxSine HVDC Flex

OEM ABB Siemens Alstom CN OEMs

Rating 1000 MW 1000 MW 25 MW 1000 MW
Ref
16 links 3 links Demo(+2) 2+2…

Stack

Device

Device rating: 500-2100 A, 2500-4500 V

 Transimmitted power up, device rating challenged

© ABB
November, 2016 | Slide 3
Overview of Power Semiconductors for VSC-HVDC
Typically 3300 & 4500V, potential 3000A+

 Typically 3300 & 4500V, potential

3000A+

© ABB
November, 2016 | Slide 4
Basic Characteristic of power device
3300V & 4500V, 1200- 2000A

StakPak HiPak HiPak IEGT IGCT

ST2100GXH22A
4500V,2000A 5SNA 1200G450300 5SNA 1500E330305 “5SHY 80Y4500”
+ diode
VCES, V 4500 4500 3300 4500 4500
Ic / 0.5ITGQM, A 2000 1200 1500 2100 4000
Max turn-off I, A 4000 2400 3000 5500 8000
IFSM 16-32 kA 9 kA 13.5 kA - 48 kA
VCEsat / VF ,125C, V 3.33 3.53 2.68 4.7 3.38
Total switch losses/pulse, J 24.44 13.08 7.2 25 31.3
Conduction losses (3ms-pulse), J 20.0 12.7 12.0 29.6 40.6
Total losse (3ms pulse), J 44.4 25.8 19.2 54.6 71.9
Total losses (3300V 100%), J 127% 123% 100% 149%? 103%
Rth (Junction to case), K/kW 4.5 9.5 8.5 5.25 8.5
Chip tech SPT+ SPT+/trench SPT+/trench IEGT GCT
Integrated GU? No No No No Yes
SC current limiting Yes Yes Yes Yes No
Case rupture (explosion rating) Yes No No Yes Yes
SCFM Yes No No Yes/No Yes

 Losses increases with Vce square!

© ABB
November, 2016 | Slide 5
Power Device: System needs and device options
Pushing physical limit of semiconductors

System needs Device options

High reliability & availability Incorporate feedback, controllability

Higher current BiGT, Enhanced trench, bigger, IGCT, Tvj

Higher voltage 4500V, 6500V (but losses)

Higher surge current BiGT, more diode, IGCT

Lower losses Enhanced trench, technology curve

Higher energy density BiGT, Enhanced Trench, chip size, IGCT

Case rupture (explosion rating) PressPack/StakPak,

Design simplicity & modularity Modular type device

Series connection (DC-Breaker…) PressPack device

© ABB
November, 2016 | Slide 6
Reliability consideration -1
Reliability is key to uninterrupted operation

 Robust chip design: large/high SOA and controllability

 Robust module design: low parts count & standardization
 Manufacturing: quality designed in, economy of scale, TQM
 Gate driver: must be matched for safe operation
 Application: low Ls, safety margin for worst conditions
 Vdc: design with 100 FIT (FIT rate exponential to Vdc)…
 Field feedback: essential for matured application

© ABB
November, 2016 | Slide 7
Guideline to Device Current and Voltage
Trade-off: voltage vs losses, current vs di/dt

Voltage class: less series connection but total losses up

 7.5kV in IGBT, 10kV in IGCT demonstrated (junction termination
challenge)
 Nominal Vce-sat up with Vce, switching losses up with V^2 (3300V
 6500V)
  6500V feasible but 4500V optimal (price of passive component
up with Vce)
Current
 Current density (A/cm2): new generation, e.g. enhanced trench
 Rth: improved cooling increase current capability, e.g. Presspack
 Bigger module: more chips in parallel limited by current sharing
(asymmetric Ls),
 Over-voltage: caused by di/dt*Ls (unless Ls proportionally
reduced)
  4000 A limit?
IFSM: higher diode ratio e.g. StakPak & BiGT

© ABB
November, 2016 | Slide 8
IGCT product range –loss optimization
Moving along technology curve for optimized
application

Energy saving potential:

>1 MW/GW

 Low on-state voltage, for breakers: 5SHY 35L4522.

 Low frequency: 5SHY 55L4500.
 Medium frequency: 5SHY 35L4520
 Low switching losses: 5SHY 40L4511 (proton-irradiated)
© ABB
November, 2016 | Slide 9
Assembly Tolerant & Fail-Safe Operation
Efficient assembly & safe operation

Converter cell design and assembly

 Assembly: construction tolerance should not impact on fragile chip
 Modularity: facilitate whole power range with same device platform
 Series connection: PressPack favoured
 Maintenance: fast & easy access for replacement, low part counts

Fail-safe operation
 SCFM: device should fail into stable shorted state & last till
breaker activated
 Case rupture (explosion rating): remain mechanically intact during
fault, contain damage

© ABB
November, 2016 | Slide 10
Power Device Trend for VSC-HVDC Application

 Brief Overview
 Power device development guideline
 StakPak: Design & Benefit
 IGCT: Potential Benefit
 Future Trend
 Summary

© ABB
November, 2016 | Slide 11
StakPak 5SNA 2000K451300 –Design
VCE = 4500 V, IC = 2000 A

SPT+ technology:
 low-loss, rugged SPT+, large SOA
 High controlability
 Smooth switching SPT+ chip-set for good
EMC

Press-pack module design

 High tolerance to uneven mounting pressure
clamping operation:  Explosion resistant package
F3 > F 2
F1 F2 > F 1

springs  Direct bonding to Mo-basedplate  low Rth

 SCFM Fail-safe for series connection

F = c  x

© ABB
November, 2016 | Slide 12
StakPakTM –ABB Proprietary IGBT module technology

StakPak StakPak press-pack Semiconductor wafer

sub-module

IGBT Chip
Sub-module Cross Section

© ABB
November, 2016 | Slide 13
StakPak Innovative Clamping
Easy and Controlled Clamping
Internal construction
of the sub-module  Independent suspension for each chip
reveals the unique
ABB design: with individual spring-contact
Press-Pin with Spring
contacts for each
Chip position  Contact force for the chip is defined by
the spring and not influenced by un-
even mounting force
 Surplus external force is absorbed by
the rugged module frame
clamping operation:
F3 > F 2
 Tolerant against inhomogeneous
mounting force – the choice for large
F1 F2 > F 1

springs
stacks
 Fm = 60-75 kN

F = c  x

© ABB
November, 2016 | Slide 14
StakPak -Gate drive

 Standard gate IGBT driver can be used

 RG-on = 1.8 Ohm, RG-off = 8.2 Ohm,
CGE = 330 nF
 Active clamp available
 Standard gate driver interface
 Gate driver with small jitter needed for
series connection

© ABB
November, 2016 | Slide 15
IGBT StakPak –Modular Design

n standard submodules
+
Glass fibre reinforced frame
=

Possible current ratings

700A – 3000A
StakPak Stack

© ABB
November, 2016 | Slide 16
StakPak line-up
Product Matrix

Part Number Voltage VCEs Current IC IGBT / Diode Submodules SCFM

[V] [A] current ratio [n] rated
5SNA 3000K452300* 4500 3000 1:1 6 no

5SNA 2000K452300* 4500 2000 1:1 4 no

5SNA 2000K451300 4500 2000 1:1 4 yes

5SNA 2000K450300 4500 2000 1:2 6 yes

5SNA 1300K450300 4500 1300 1:2 4 yes

5SNR 20H2501 2500 2000 1:1 6 yes

5SNR 13H2501 2500 1300 1:1 4 yes

5SNR 10H2501 2500 1000 1:1 3 Yes

 The standard 1:1 IGBT to Diode current ratio suits most applications
 For special applications which require high diode performance, ABB offers a
1:2 IGBT to Diode current ratio

© ABB
November, 2016 | Slide 17
Phase current simulation (2 level) (250Hz, RMS)
3000K452300 (4500V / 3000A, Tj100°C)

© ABB
November, 2016 | Slide 18
StakPak 5SNA 3000K452300 (4500V, 3000A)

50 Hz 6000A transient over-current: dT=10°C per switch, dT =10°C for 3 ms

(150Hz), dT =-10°C for 3 ms off
 turn-off of 6000A (2Ic) transient over-current realistic if designed Tj =100C

© ABB
November, 2016 | Slide 19
Project references
HVDC Light technology

East West Tjæ reborg Troll, 2004 Skagerrak 4 Valhall, 2009

Interconnector, 2000,7 MW 2X40 MW 2014, 700 MW 75 MW
2012 , 500 MW
Estlink
Cross Sound 2006, 350 MW
2002, 330 MW
Hällsjön
Eagle Pass 1997, 3 MW
2000, 36 MW NordBalt
2015, 700 MW
BorWin1
2009, 400 MW Gotland
1999, 50 MW
DolWin1
2013, 800 MW Directlink
2000, 3X60 MW
DolWin2
2015, 900 MW Murraylink
2002, 220 MW
Caprivi link
2010, 300 MW
Awarded 1200 MW HVDC Light Project by Scottish Hydro Electric
© ABB
November, 2016 | Slide 20
Example: Same IGBT Chip Technology for HVDC «Light»
Off-Shore Windpark DolWin in the North See

4.5 kV/2000 A

ABB IGBT StakPak operating

165 km / ±320 kV / 800 MW in more than 10 HVDC Light
projects worldwide

© ABB
November, 2016 | Slide 21
IV Characteristic of StakPak
10 kA reached w/o desaturation -5SNA 2000K450300

© ABB
November, 2016 | Slide 22
Turning off behavior of StakPak
Safe 10 kA turn-off with snubber -5SNA 2000K451300

© ABB
November, 2016 | Slide 23
Converter topologies
DC breaker operation

 Ic = 15 kA, Vcc = 3000 V

 Cs = 7.5 µF - value depends on inductance in a main circuit to
limit the Turn off overvoltage

IGBT turn off: Vcc = 3000 V, 15000 A, Cs = 7.5 µF, RT

18000 24

15000 16

12000 8
Vce, Ice [V, A]

Vce Ice Vge

Vge [V]
9000 0

6000 -8

3000 -16

0 -24
0 10 20 30 40
t [µs]
© ABB
November, 2016 | Slide 24
Test of series connected StakPak 4500V/2000A
Uniform IGBT turn-off of 12kV

Voltage development
to 3kV on each StakPak

© ABB
November, 2016 | Slide 25
Application example of StakPak
Hybrid DC breaker tested to 80 kV, turn-off 16 kA (5ms)

© ABB
November, 2016 | Slide 26
StakPak –Summary
Most powerful device for VSC-HVDC & DC-Breaker

 StakPak is the most powerful IGBT module

电流
available (3000A, turn-off 10kA, IFSM 24kA)
StakPak模块
-控制终端
 Fail into shorted stated, long term stability
吸热设备 possible
 Flexible current rating with surge current
options
 Uniform chip pressure via individual spring
 Enable easy & controlled clamping system
for long stack
 Efficient cooling offering high rated power
 Explosion proof
 Tailor-made for T&D applications ( safe,
reliable, redundancy, uninterrupted)
 Some 14+2 HVDC projects in safe operation

© ABB
November, 2016 | Slide 27
Power Device Trend for VSC-HVDC Application

 Brief Overview
 Power device development guideline
 StakPak: Design & Benefit
 IGCT: Potential Benefit
 Future Trend
 Summary

© ABB
November, 2016 | Slide 28
What is an IGCT?

 An IGCT is...
 An Integrated Gate-Commutated Thyristor
 Based on GTO and IGBT technology and requires no turn-off
snubber
 Conducts like a thyristor but turns off like an IGBT
 turn-off loss of an IGBT
 conduction loss of a thyristor
 turn-on loss of a mechanical switch!

 Introduced in 1997
 Three manufacturing locations world-wide:
 Japan (Mitsubishi)
 Switzerland & Czech Republic(ABB)
 ZhuZhou (CSR-TEC)

© ABB
November, 2016 | Slide 29
IGCT
Integration of Gate unit and power semiconductor

Gate unit

Power semiconductor
In low inductive package

 IGCT operation requires low inductive coupling of gate unit

and power semiconductor
 Integration of
 power semiconductor

 Low inductive device package

 Gate unit
© ABB
November, 2016 | Slide 30
Product range -IGCT

Package
Part number VDRM (V) VDC (V) ITGQM (A)** ITAVM (A) MW
(mm)
Asymmetric
5SHY 35L4520 4500 2800 4000 1700 85/26 8
5SHY 35L4521 4500 2800 4000 1700 85/26 8
5SHY 35L4522 4500 2800 4000 2100 85/26 10
5SHY 40L4511 4500 2800 3600 1430 85/26 7
5SHY 55L4500 4500 2800 5000 1870 85/26 9
5SHY 50L5500 5500 3300 3600 1290 85/26 6
5SHY 42L6500 6500 4000 3800 1290 85/26 6
5SHY 30L9500 * 9500 5000 3000 1700 85/26
Reverse conducting
5SHX 26L4520 4500 2800 2200 1010 85/26 5
Diode part 390
5SHX 19L6020 5500 3300 1800 840 85/26 4
Diode part 340
…F, H… 4500-5500 2800-3300 520-1100
5SHX 80Y4500 * 4500 2800 8000 3400 150/26 16
* under development, ** max turn-off current

Confidential
© ABB
November, 2016 | Slide 31
IGCT for Wind Converter Application
Comparison Results (300Hz) - PLECS Simulation

Converter Sw. Losses Cond. Losses PClamp Pinput Losses

(kW) (kW) (kW) (kW) (%)
3 Level 13.3 20 10 8530 0.5
IGCT
Losses: -23%
3 Level 17 36 - 8100 0.65
IGBT (2 in //)

ABB PRODUCT Tj (Outer Tj (Inner position)

position) ( ᵒC)
( ᵒC)
IGCT 5SHY 55L4500 112 85
IGBT 5SNA 1200G450350 110 93

 Semiconductor losses alone reduced by 23%

 Energy saving per 10 MW power rating
2x(0.65-0.5)/100 x 10’000’000 = 30 kW
x 5 USD = 150 kUSD
 Energy saving 3 MW/GW
© ABB
November, 2016 | Slide 32
IGCT Application Benefits

 Integrated gate unit higher level integration

 Low parts count  very high reliability & low FIT
 Low on-state losses inverter efficiency >99.6%
 High rated current  no paralleling needed (2x “HiPak”)
 Very high power & density (2-side cooling)  compact
design
 High load cycling capability long term reliability
 High current turn-off capability (8kA)  high power
 Classic stable SCFM ideal for HVDC application
 Competive MW/USD  Cost effective solution
 > 50 kpcs in field  FIT rate comparable to HVDC
Thyristors
 Potential for VSC-HVDC application

© ABB
November, 2016 | Slide 33
Power Device Trend for VSC-HVDC Application

 Brief Overview
 Power device development guideline
 StakPak: Design & Benefit
 IGCT: Potential Benefit
 Future Trend
 Summary

© ABB
November, 2016 | Slide 34
Technology Drivers for Higher Power (the boundaries)

Area Increase Integration

I I
Larger Devices Termination/Active HV,
Area RC, RB Integration
Extra Paralleling

New Tech.

Loss Reduction Absolute SOA Increase

Carrier Enhancement Increasing Device Power Latch-up / Filament Protection
Thickness Reduction (Blocking) Controllability, Softness & Scale
Density
V.I Vmax.Imax
Losses New Technologies SOA

ΔT/Rth
Temperature
Traditional Focus Improved Thermal
High Temp. Operation

© ABB
Lower Package Rth
November, 2016 | Slide 35
IGBT Technologies
Next 10 Year
Technologies

Planar
Enh. 2nd Gen.
Cell Design Enh. Trench
Trench
IGBT Higher
SOA
Technology Temp

NPT
Bulk Design SPT/FS Integration
Silicon Thickness Limit (little more BIGT
PT to gain)

6500V
4500V
3300V
Ratings 2500V
1700V
1200V
600V

1990 2015
© ABB
November, 2016 | Slide 36
Enhanced Trench (EHT) for IGBT

 ABB EHT ready 2016 (1700 - 3300V)

 Current density up 20% (3300 - 4500V)
 StakPak 4500V 3000A 3600A

© ABB
November, 2016 | Slide 37
Integration: Bimode Insulated Gate Transistor (BIGT)
Integrates an IGBT & RC-IGBT in one structure to eliminate snap-back effect
BIGT Wafer
Backside

BiGT Turn-off

BiGT Reverse
Recovery

 Increased IGBT and diode area, MOS control needed for full potential
HiPak: 3300V/2000A shown, Surge current up by 2x
StakPak: 4500V/3000A demonstrated for DC-Breaker (CIGRE 2014)
© ABB
November, 2016 | Slide 38
ABB in High Power Semiconductors
Application DC Breakers based on a BIGT Chip and
StakPak package

The BIGT (Bimode Insulated Gate Transistor)

enables lower losses in both directions and a
comfortable maximum breaking current up to
16kA at operating times within 5ms.

See Munaf Rahimo, Paper B4-302, PS3, Cigré Paris, 2014

© ABB
November, 2016 | Slide 39
The New Module Standard (LinPak)

 Dual Module Concept optimized for low Ls

Applications 1 C1

 High power density, low over-voltage, low

4
C1

switching losses G1
5

 100mm x 140mm typical 3.3kV / 500A E1

6

2
C2 / E1
 Ideal for modular parallel connection
7
G2

8
E2
9
NTC 3 E2

2x4000A，400 x 140mm2
2x3000A 300 x 140mm2

2x2000A 200 x 140mm2

2x1000A
100 x 140mm2

Module Current Rating Stray Stray Module

Inductance Inductance x Over-
Current voltage
LinPak 900A 10nH 9µH 15.6%
PrimePack 1400A 10nH 14µH 24.3%
HiPak 3600A 8nH (x2) 57.6µH 100 %
© ABB
November, 2016 | Slide 40
6’’ RC-IGCT to turn off 8000 A
Most powerful semiconductor

 First prototypes of 150 mm (6”) RC-IGCT (RC = reverse

conducting) 4.5/7kA protot
© ABB Group
November 4, 2011 | Slide 22

 Product development pending application

 Voltage: 4.5 & 6.5kV
 Target spec available: VDRM=4500V, ITGQM=8000A/9000A
 loss reduction by >20%, compact & reliability (simplicity)

© ABB
November, 2016 | Slide 41
High Power IGBTs and Modules

HiPak 2
Current Rating
LinPak Trench
BIGT
3.3kV 4.5kV 6.5kV
2400A 1800A 1200A

StakPak
BIGT / Enhanced Trench
(TSPT+) 1800A 1500A 900A

HiPak

1500A 1200A 750A

Enhanced Planar
(SPT+)/ Trench

1200A 900A 600A

Planar SPT

StakPak: 2000300036004000A?

© ABB
2000 2005 2010 2015 2020
November, 2016 | Slide 42
The MAIN THREE High Power MW Devices: POWER

© ABB
November, 2016 | Slide 43
Summary

 Power device pushes physical limit for multi-GW VSC-HVDC

application
 4500V appears a good voltage, up to 3000 A shown, Ic to 4000 A
possible with StakPak, but challenge for Ls (< 100nH)
 Enhance reliability, via lower “piece count”, to ensure service
availability
 Optimise along technology curve for reduced losses
 Improves chip technology curve via Enhanced trench  +20% Ic
 Increase effective chip area via BiGT  +20% Ic
 Increase of current by 30% via combined improvements feasible
 LinPak low Ls Module platform offers compact & low over-voltage
design
 IGCT represents alternative for high power (low losses) application

© ABB
November, 2016 | Slide 44