High Current PN Half Bridge with

Integrated Driver
IFX007T
Industrial & Multi Purpose NovalithIC™

1 Overview
Quality Requirement Category: Industrial

Features
• Path resistance of max. 12.8 mΩ @ 25°C (typ. 10.0 mΩ @ 25°C)
High side: max. 6.5 mΩ @ 25°C (typ. 5.3 mΩ @ 25°C)
Low side: max. 6.3 mΩ @ 25°C (typ. 4.7 mΩ @ 25°C)
• Enhanced switching speed for reduced switching losses
• Capable for high PWM frequency combined with active freewheeling
• Switched mode current limitation for reduced power dissipation in overcurrent
• Current limitation level of 55 A min.
• Status flag diagnosis with current sense capability
• Overtemperature shutdown with latch behavior
• Undervoltage shutdown
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Operation up to 40 V
• Green Product (RoHS compliant)
• JESD47I Qualified

Description
The IFX007T is an integrated high current half bridge for motor drive applications. It is part of the Industrial &
Multi Purpose NovalithIC™ family containing one p-channel high-side MOSFET and one n-channel low-side
MOSFET with an integrated driver IC in one package. Due to the p-channel high-side switch the need for a
charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead
time generation and protection against overtemperature, undervoltage, overcurrent and short circuit.
The IFX007T provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption.

Preliminary Data Sheet 1 Rev. 1.0

www.infineon.com 2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Overview

Type Package Marking

IFX007T PG-TO263-7-1 IFX007T

Preliminary Data Sheet 2 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T

Table of Contents
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 Functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.3 Thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Block description and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.1 Supply characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.2 Power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2.1 Power stages - static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2.2 Switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2.3 Power stages - dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3 Protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3.1 Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3.2 Overtemperature protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.3.3 Current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.3.4 Short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.5 Electrical characteristics - protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.4 Control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.1 Input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.2 Dead time generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.3 Adjustable slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.4 Status flag diagnosis with current sense capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.5 Truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.4.6 Electrical characteristics - control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.1 Application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.2 Layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.3 PWM control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Preliminary Data Sheet 3 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Block diagram

2 Block diagram
The IFX007T is part of the Industrial & Multi Purpose NovalithIC™ family containing three separate chips in one
package: One p-channel high-side MOSFET and one n-channel low-side MOSFET together with a driver IC,
forming an integrated high current half-bridge. All three chips are mounted on one common lead frame, using
the chip-on chip and chip-by-chip technology. The power switches utilize vertical MOS technologies to ensure
optimum on state resistance. Due to the p-channel high-side switch the need for a charge pump is eliminated
thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features
logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection
against overtemperature, undervoltage, overcurrent and short circuit. The IFX007T can be combined with
other IFX007Ts to form a H-bridge or a3-phase drive configuration.

2.1 Block diagram

VS

Undervolt. Current
detection Sense

Current
Limitation
HS

Overtemp .
detection Gate Driver
IS HS
OUT
Digital Logic LS off HS off
IN
Gate Driver
LS

INH

Current
Slewrate Limitation
SR
Adjustment LS

GND

Figure 1 Block diagram

2.2 Terms
Following figure shows the terms used in this data sheet.

VS I VS , -I D (H S) V D S(H S)

IIN VS
IN
V IN
I IN H
INH I OU T , I L
VIN H OUT
ISR VD S(L S) V OU T
SR
V SR
I IS
IS
GND
VIS

I GN D , I D (L S)

Figure 2 Terms

Preliminary Data Sheet 4 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Pin configuration

3 Pin configuration

3.1 Pin assignment

1234 5 67

Figure 3 Pin assignment IFX007T (top view)

3.2 Pin definitions and functions

Table 1 Pin definitions and functions

Pin Symbol I/O Function
1 GND – Ground
2 IN I Input
Defines whether high - or low-side switch is activated
3 INH I Inhibit
When set to low device goes in sleep mode
4,8 OUT O Power output of the bridge
5 SR I Slew Rate
The slew rate of the power switches can be adjusted by connecting
a resistor between SR and GND
6 IS O Current Sense and Diagnostics
7 VS – Supply

Bold type: pin needs power wiring

Preliminary Data Sheet 5 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
General product characteristics

4 General product characteristics

The device is intended to be used in an industrial or consumer environment. The circumstances, how the
device environment must look like are described in this chapter.

4.1 Absolute maximum ratings

Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

Table 2 Absolute maximum ratings1)

Tj = 25 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
Voltages
Supply voltage VS -0.3 – 40 V – P_4.1.1
Drain-source voltage high side VDS(HS) -40 – – V Tj ≥ 25°C P_4.1.2
-38 – – V Tj < 25°C
Drain-source voltage low side VDS(LS) – – 40 V Tj ≥ 25°C P_4.1.3
– – 38 V Tj < 25°C
Logic input voltage VIN -0.3 – 5.3 V – P_4.1.4
VINH
Voltage at SR pin VSR -0.3 – 1.0 V – P_4.1.5
Voltage between VS and IS pin VS -VIS -0.3 – 40 V – P_4.1.6
Voltage at IS pin VIS -20 – 40 V – P_4.1.7
Voltage transient between VS and dVS -1 – 1 V Transient fall/rise P_4.1.8
GND pin2) time: ttrans > 85 ns.
Currents
HS/LS continuous drain current ID(HS) -50 – 50 A switch active P_4.1.9
ID(LS)
HS/LS pulsed drain current3) ID(HS) -117 – 117 A tpulse = 10 ms P_4.1.10
ID(LS) single pulse
Temperatures
Junction temperature Tj -40 – 150 °C – P_4.1.11
Storage temperature Tstg -55 – 150 °C – P_4.1.12
ESD susceptibility
ESD resistivity HBM VESD kV HBM4) P_4.1.13
IN, INH, SR, IS -2 – 2
OUT, GND, VS -6 – 6
1) Not subject to production test, specified by design.
2) “Under Voltage Shut Down” shall not be triggered.
3) Maximum reachable current may be smaller depending on current limitation level.
4) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001 (1.5 kΩ, 100 pF).

Preliminary Data Sheet 6 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
General product characteristics

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not designed for continuous repetitive operation.

4.2 Functional range

The parameters of the functional range are listed in the following table:

Table 3 Functional range

Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
Supply voltage range for normal VS(nor) 8 – 40 V Tj ≥ 25°C P_4.2.1
operation 8 – 38 V Tj < 25°C
Junction temperature Tj -40 – 150 °C – P_4.2.2

Note: Within the functional or operating range, the IC operates as described in the circuit description. The
electrical characteristics are specified within the conditions given in the Electrical Characteristics
table.

4.3 Thermal resistance

This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to
www.jedec.org

Table 4 Thermal resistance

Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
1)
Thermal resistance RthJC(HS) – 0.55 0.8 K/W P_4.3.1
Junction-case, high-side switch
Rthjc(HS) = ΔTj(HS)/ Pv(HS)
1)
Thermal resistance RthJC(LS) – 1.1 1.6 K/W P_4.3.2
Junction-case, low-side switch
Rthjc(LS) = ΔTj(LS)/ Pv(LS)
1) 2)
Thermal resistance RthJA – 19 – K/W P_4.3.3
Junction-ambient
1) Not subject to production test, specified by design.
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.

Preliminary Data Sheet 7 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

5 Block description and characteristics

5.1 Supply characteristics

Table 5 Supply characteristics

VS = 24 V, Tj = 25 °C, IL = 0 A,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
General
Supply current IVS(on) – 2.3 2.8 mA VINH = 5 V P_5.1.1
VIN = 0 V or 5 V
RSR = 0 Ω
DC-mode
normal operation
(no fault condition)
Quiescent current IVS(off) – 7 10 µA VINH = 0 V P_5.1.2
VIN = 0 V or 5 V 1)
1) Not subject to production test, specified by design.

26
24
VS = 36 V
22
20
18
16
IVS(off) [µA]

14
12
10
VS = 24 V
8
6
VS = 8 V
4
VS = 18 V
2
0
-40 -20 0 20 40 60 80 100 120 140 160
T [°C]

Figure 4 Typical quiescent current vs. junction temperature

Preliminary Data Sheet 8 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

5.2 Power stages

The power stages of the IFX007T consist of a p-channel vertical DMOS transistor for the high-side switch and
an n-channel vertical DMOS transistor for the low-side switch. All protection and diagnostic functions are
located in a separate top chip. Both switches allow active freewheeling and thus minimizing power dissipation
during PWM control.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj.
The typical on state resistance characteristics are shown in Figure 5 and Figure 6.

High Side Switch Low Side Switch

10 10

9 9

8 Tj = 150°C 8
Tj = 150°C
7 7

6 6
RON(HS) [mΩ]

RON(LS) [mΩ]

Tj = 25°C
Tj = 25°C
5 5

4 4
Tj = -40°C
Tj = -40°C
3 3

2 2

1 1

0 0
8 12 16 20 24 28 32 36 40 8 12 16 20 24 28 32 36 40
VS [V] VS [V]

Figure 5 Typical ON-state resistance vs. supply voltage

Preliminary Data Sheet 9 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

High Side Switch Low Side Switch

10 10

9 9

8 8

7 7
typ. 98 % typ. 98 %
typ.
6 6

RON(LS) [mΩ]
RON(HS) [mΩ]

typ.
5 5

4 4

3 3

2 2

1 1

0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tj [°C] Tj [°C]

Figure 6 Typical ON-state resistance vs. junction temperature; VS = 13.5 V; ID = 9 A

5.2.1 Power stages - static characteristics

Table 6 Power stages - static characteristics

VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise
specified)
Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
High-side switch - static characteristics
ON state high-side resistance RON(HS) – 5.3 6.5 mΩ IOUT = 9 A; VS = 13.5 V P_5.2.1
Leakage current high side IL(LKHS) – – 1 µA VINH = 0 V; VOUT = 0 V P_5.2.2
Reverse diode forward-voltage VDS(HS) – 0.8 0.9 V IOUT = -9 A P_5.2.3
high side1)
Low-side switch - static characteristics
ON-state low-side resistance RON(LS) – 4.7 6.3 mΩ IOUT = -9 A; VS = 13.5 V P_5.2.4
Leakage current low side IL(LKLS) – – 1 µA VINH = 0 V; VOUT = VS P_5.2.5
Reverse diode forward-voltage -VDS(LS) – 0.8 0.9 V IOUT = 9 A P_5.2.6
low side
1) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR.

Preliminary Data Sheet 10 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

5.2.2 Switching times

IN

t
td r(H S) tr(H S) td f(H S) tf(H S)
VOUT

80% 80%

ΔVOUT ΔVOUT

20% 20%

Figure 7 Definition of switching times high side (Rload to GND)

IN

t
td f(L S) tf(L S) t d r(L S) tr(L S)
VOUT

80%
80%

ΔVOUT ΔV OUT

20% 20%

Figure 8 Definition of switching times low side (Rload to VS)

Due to the timing differences for the rising and the falling edge there will be a slight difference between the
length of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
• ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
• ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)).

Preliminary Data Sheet 11 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

5.2.3 Power stages - dynamic characteristics

The slew rate resistor at the SR-pin shall not exceed the max. slew rate resistor value of RSR ≤ 51 kΩ.

Table 7 Power stages - dynamic characteristics

VS = 24 V, Tj = 25 °C, Rload = 4 Ω, single pulse,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
High-side switch dynamic characteristics
Rise-time of HS tr(HS) 0.05 0.25 0.75 µs RSR = 0 Ω P_5.2.7
0.22 1.3 4.7 RSR = 51 kΩ
Switch-ON delay time HS tdr(HS) 1.5 3.4 4.6 µs RSR = 0 Ω P_5.2.8
2 15 31 RSR = 51 kΩ
Fall-time of HS tf(HS) 0.05 0.25 0.7 µs RSR = 0 Ω P_5.2.9
0.22 1.3 4.5 RSR = 51 kΩ
Switch-OFF delay time HS tdf(HS) 0.8 2.4 4.1 µs RSR = 0 Ω P_5.2.10
1.1 9 21 RSR = 51 kΩ
Low-side switch dynamic characteristics
Rise-time of LS tr(LS) 0.05 0.25 0.7 µs RSR = 0 Ω P_5.2.11
0.22 1.3 4.5 RSR = 51 kΩ
Switch-OFF delay time LS tdr(LS) 0.2 1.5 2.5 µs RSR = 0 Ω P_5.2.12
1 7 16 RSR = 51 kΩ
Fall-time of LS tf(LS) 0.025 0.25 0.7 µs RSR = 0 Ω P_5.2.13
0.18 1.3 4.5 RSR = 51 kΩ
Switch-ON delay time LS tdf(LS) 1.6 4.2 5.9 µs RSR = 0 Ω P_5.2.14
2.0 16 36 RSR = 51 kΩ

5.3 Protection functions

The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the
current limitation (Chapter 5.3.3). In case of overtemperature the IFX007T will apply the slew rate determined
by the connected slew rate resistor. In current limitation mode the highest slew rate possible will be applied
independent of the connected slew rate resistor. Overtemperature and overcurrent are indicated by a fault
current IIS(LIM) at the IS pin as described in the paragraph “Status flag diagnosis with current sense
capability” on Page 16 and Figure 12.

5.3.1 Undervoltage shutdown

To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if
the supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis
VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON).

Preliminary Data Sheet 12 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

5.3.2 Overtemperature protection

The IFX007T is protected against overtemperature by an integrated temperature sensor. Overtemperature
leads to a shutdown of both output stages. This state is latched until the device is reset by a low signal with a
minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal
hysteresis ΔT in the meantime.
Repetitive use of the overtemperature protection impacts lifetime.

5.3.3 Current limitation

The current in the bridge is measured in both switches. As soon as the current in forward direction in one
switch (high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is
activated for tCLS. During that time all changes at the IN pin are ignored. However, the INH pin can still be used
to switch both MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin
is reset after 2 * tCLS. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by
EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay
times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current
dI/dt as shown in Figure 10.

IL
tCLS
ICLx
ICLx 0

Figure 9 Timing diagram current limitation (inductive load)

Preliminary Data Sheet 13 Rev. 1.0

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High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

High Side Switch Low Side Switch

85 85
Tj = -40°C
84 84
Tj = -40°C
83 83
82 82
Tj = 25°C
81 81
80 80
79 ICLH0 79
ICLH0 Tj = 25°C
ICLH [A]

ICLL [A]
78 78
Tj = 150°C
77 77
76 76
75 75
Tj = 150°C
74 74
73 73
72 72
71 71
70 70
0 500 1000 1500 2000 0 500 1000 1500 2000
dIL/dt [A/ms] dIL/dt [A/ms]

Figure 10 Typical current limitation detection level vs. current slew rate dIL/dt

High Side Switch Low Side Switch

85 85
84 84
Tj = -40°C
83 83
82 82
81 81
Tj = -40°C
80 80
79 79
ICLH [A]

ICLL [A]

78 78 Tj = 25°C
Tj = 25°C
77 77
76 76
75 75
Tj = 150°C
74 74
Tj = 150°C
73 73
72 72
71 71
70 70
8 12 16 20 24 28 32 36 40 8 12 16 20 24 28 32 36 40
VS [V] VS [V]

Figure 11 Typical current limitation detection levels vs. supply voltage

In combination with a typical inductive load, such as a motor, this results in a switched mode current
limitation. This method of limiting the current has the advantage of greatly reduced power dissipation in the
IFX007T compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation

Preliminary Data Sheet 14 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush
current during motor start up). However, the regular use of the current limitation is allowed as long as the
specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime
of the device.

5.3.4 Short circuit protection

The device provides embedded protection functions against
• output short circuit to ground
• output short circuit to supply voltage
• short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the
overtemperature shutdown of the device.

5.3.5 Electrical characteristics - protection functions

Table 8 Electrical characteristics - protection functions

VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
Undervoltage shutdown
Switch-ON voltage VUV(ON) – – 5.0 V VS increasing P_5.3.1
1)
Switch-OFF voltage VUV(OFF) 3.3 – 4.7 V VS decreasing, INH = 1 P_5.3.2
2)
ON/OFF hysteresis VUV(HY) – 0.3 – V P_5.3.3
Current limitation
Current limitation detection ICLH0 55 77 98 A VS = 13.5 V P_5.3.4
level HS/LS ICLL0
Current limitation timing
2)
Shut OFF time for HS and LS tCLS 70 115 210 µs P_5.3.5
Thermal shutdown
Thermal shutdown junction TjSD 155 175 200 °C – P_5.3.6
temperature
Thermal switch-ON junction TjSO 150 – 190 °C – P_5.3.7
temperature
2)
Thermal hysteresis DT – 7 – K P_5.3.8
2)
Reset pulse at INH Pin (INH low) treset 4 – – µs P_5.3.9
1) With decreasing Vs < 5.5 V activation of the current limitation mode may occur before undervoltage shutdown.
2) Not subject to production test, specified by design.

Preliminary Data Sheet 15 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

5.4 Control and diagnostics

5.4.1 Input circuit

The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control
the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition
one of the two power switches is switched on depending on the status of the IN pin. To deactivate both
switches, the INH pin has to be set to low. No external driver is needed. The IFX007T can be interfaced directly
to a microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded.

5.4.2 Dead time generation

In bridge applications it has to be assured that the high-side and low-side MOSFET are not conducting at the
same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC,
generating a so called dead time between switching off one MOSFET and switching on the other. The dead
time generated in the driver IC is automatically adjusted to the selected slew rate.

5.4.3 Adjustable slew rate

In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an
external resistor. The slew rate pin SR allows the user to optimize the balance between emission and power
dissipation within his own application by connecting an external resistor RSR to GND.

5.4.4 Status flag diagnosis with current sense capability

The sense pin IS is used as a combined current sense and error flag output.
In normal operation (current sense mode), a current source is connected to the status pin, which delivers a
current proportional to the forward load current flowing through the active high-side switch. The sense
current can be calculated out of the load current by the following equation:
1 -
I IS = --------------- ⋅ I L + I IS ( offset ) (5.1)
dk ILIS

The other way around, the load current can be calculated out of the sense current by following equation:
I L = dkILIS ⋅ ( IIS – IIS ( offset ) ) (5.2)

The differential current sense ratio dkilis is defined by:

I L2 – IL1
d k ILIS = -------------------------------------------- (5.3)
I IS ( IL2 ) – IIS ( I L1 )

If the high side drain current is zero (ISD(HS) = 0A) the offset current IIS = IIS(offset) still will be driven.
The external resistor RIS determines the voltage per IS output current. The voltage can be calculated by
VIS = RIS . IIS.
In case of a fault condition the status output is connected to a current source which is independent of the load
current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external
resistor and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS.

Preliminary Data Sheet 16 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

Normal operation: Fault condition:

current sense mode error flag mode

VS VS

IIS(offset) ESD-ZD IIS(offset) ESD-ZD

IIS~ ILoad IS IIS~ ILoad IS

Sense Sense
output RIS VIS output RIS VIS
IIS(lim) IIS(lim)
logic logic

Figure 12 Sense current and fault current

IIS
[mA]

IIS(lim)

lu e
va
LIS
dk I
er
lo w
e
valu
k IS
e r d IL
high

IIS(offset)
Current Sense Mode Error Flag Mode
(High Side)

ICLx IL [A]

Figure 13 Sense current vs. load current

Preliminary Data Sheet 17 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

5.4.5 Truth table

Table 9 Truth table

Device State Inputs Outputs Mode
INH IN HSS LSS IS
Normal operation 0 X OFF OFF 0 Stand-by mode
1 0 OFF ON IIS(offset) LSS active
1 1 ON OFF CS HSS active
Undervoltage (UV) X X OFF OFF 0 UV lockout, reset
Overtemperature (OT) 0 X OFF OFF 0 Stand-by mode, reset of latch
or short circuit of HSS or LSS 1 X OFF OFF 1 Shutdown with latch, error detected
Current limitation mode/ 1 1 OFF ON 1 Switched mode, error detected1)
overcurrent (OC) 1 0 ON OFF 1 Switched mode, error detected1)
1) Will return to normal operation after tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.3)

Table 10
Inputs Switches Current sense / status flag IS
0 = Logic LOW OFF = switched off IIS(offset) = Current sense - Offset (for
conditions see table: Current
sense)
1 = Logic HIGH ON = switched on CS = Current sense - high side (for
conditions see table: Current
sense)
X = 0 or 1 1 = Logic HIGH (error)
0 = No output

5.4.6 Electrical characteristics - control and diagnostics

Table 11 Electrical characteristics - control and diagnostics

VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
Control inputs (IN and INH)
High level voltage VINH(H) – 1.6 2 V – P_5.4.1
INH, IN VIN(H)
Low level voltage VINH(L) 1.1 1.3 – V – P_5.4.2
INH, IN VIN(L)
1)
Input voltage hysteresis VINHHY – 300 – mV P_5.4.3
VINHY
Input current high level IINH(H) 15 30 100 µA VIN = VINH = 5.3 V P_5.4.4
IIN(H)

Preliminary Data Sheet 18 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

Table 11 Electrical characteristics - control and diagnostics (cont’d)

VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note or Number
Min. Typ. Max. Test Condition
Input current low level IINH(L) 15 25 50 µA VIN = VINH = 0.4 V P_5.4.5
IIN(L)
Current sense
Differential current sense ratio dkILIS VS = 13.5 V P_5.4.6
3
in static on-condition 15 19.5 24 10 RIS = 1 kΩ
dkILIS = dIL / dIIS IL1 = 10 A
IL2 = 40 A
Maximum analog sense current, IIS(lim) 4.1 5 6.1 mA VS = 13.5 V P_5.4.7
Sense current in fault condition RIS = 1 kΩ
Isense leakage current IISL – – 1 µA VINH = 0 V P_5.4.8
Isense offset current IIS(offset) 30 170 385 µA VINH = 5 V P_5.4.9
ISD(HS) = 0 A
1) Not subject to production test, specified by design.

0.30
0.24
0.28
Tj = -40°C
0.22 0.26

0.24
0.20
0.22
IIS(offset) [mA]

IIS(offset) [mA]

0.18
0.20
Tj = 25°C
0.16 0.18

0.16
0.14
Tj = 150°C 0.14
0.12
0.12

0.10 0.10
8 12 16 20 24 28 32 36 40 -40 -20 0 20 40 60 80 100 120 140
VS [V] T [°C]

Figure 14 Typical current sense offset current

Preliminary Data Sheet 19 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics

6.0
Tj = 150°C

5.5

Tj = 25°C

5.0
IIS(lim) [mA]

Tj = -40°C

4.5

4.0

3.5
8 12 16 20 24 28 32 36 40
VS [V]

Figure 15 Typical characteristic of the maximum analog sense current in fault condition (Pos. 5.4.7.)

Preliminary Data Sheet 20 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Application information

6 Application information
Note: The following information is given as a hint for the implementation of the device only and shall not
be regarded as a description or warranty of a certain functionality, condition or quality of the device.

6.1 Application circuit

Reverse Polarity
Protection
(IPD90P03P4L-04)
I/O WO
Reset RO Voltage I VS
Microcontroller Vdd Regulator L1 DZ1
Q 10V
D GND
Vss
R3 C1
A/D I/O I/O I/O A/D 10kΩ 100nF

optional

R12
10kΩ
IFX007T IFX007T R22
10kΩ
VS C1O2V C2O2V VS
C10 R21
R11 INH 220nF 220nF INH
1000µF 10kΩ
10kΩ
OUT OUT
IN
C19
100nF
M IN

IS IS
C1OU T C2OU T C29
R112 R212
SR 220nF 220nF 100nF SR
C1 IS 1kΩ 1kΩ C2IS
1nF GND GND 1nF
C12 R111 R211 C22
100nF 0..51kΩ 0..51kΩ 100nF

Figure 16 Application circuit: H-bridge with two IFX007T

Note: This is a simplified example of an application circuit. The function must be verified in the real
application.

6.2 Layout considerations

Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray
inductances have to be minimized in the power bridge design as it is necessary in all switched high power
bridges. The IFX007T has no separate pin for power ground and logic ground. Therefore it is recommended to
assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and
ground pin of the device (GND / pin 1) is minimized. If the IFX007T is used in a H-bridge or B6 bridge design, the
voltage offset between the GND pins of the different devices should be small as well.
Due to the fast switching behavior of the device in current limitation mode a low ESR electrolytic capacitor C10
from VS to GND is necessary. This prevents destructive voltage peaks and drops on VS. This is needed for both
PWM and non PWM controlled applications. To assure efficiency of C10 and C19/ C29 the stray inductance must
be low. Therefore the capacitors must be placed very close to the device pins. The value of the capacitors must
be verified in the real application, taking care for low ripple and transients at the Vs pin of the IFX007T.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors greater than 7 kΩ.

Preliminary Data Sheet 21 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Application information

Reverse Polarity
Protection
(IPD90P03P4L-04)
I /O WO
Voltage
Micro- Reset RO
Regulator
I
L1
VS
D Z1
controller Vdd Q 10V
D GND
Vss
R3 C1
I/O I/O I/O 10kΩ 100nF

R2
10kΩ IFX007T
VS C9 C10 CO2 V
R1
100nF 1000µF 220nF
10kΩ INH
OUT
IN
COUT M
IS 220nF

CIS
1nF SR
R12
1kΩ GND
R11
C2
0..51kΩ
100nF

Figure 17 Application circuit: half-bridge with a IFX007T (load to GND)

Note: This is a simplified example of an application circuit. The function must be verified in the real
application.

6.3 PWM control

For the selection of the max. PWM frequency the choosen rise/fall-time and the requirements on the duty cycle
have to be taken into account. We recommend a PWM-period at least 10 times the rise-time.

Example:
Rise-time = fall-time = 4 µs.
=> T-PWM = 10 * 4 µs = 40 µs.
=> f-PWM = 25 kHz.
The min. and max. value of the duty cycle (PWM ON to OFF percentage) is determined by the real fall time plus
the real rise time. In this example a duty cycle make sense from approximately 20% to 80%.
If a wider duty cycle range is needed, the PWM frequency could be decreased and/or the rise/fall-time could
be accelerated.

Preliminary Data Sheet 22 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Package Outlines

7 Package Outlines

4.4
10 ±0.2
1.27 ±0.1
0...0.3
A B
8.5 1)
0.05
1±0.3

2.4

7.551)
9.25 ±0.2

0.1
(15)

2.7 ±0.3
4.7 ±0.5
0...0.15
7 x 0.6 ±0.1 0.5 ±0.1
6 x 1.27
0.25 M A B 8˚ MAX.
0.1 B

1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut. GPT09114

10.8
9.4
16.15
4.6

0.47
0.8
8.42

Figure 18 PG-TO263-7-1 (Plastic Green Transistor Single Outline Package)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant
with government regulations the device is available as a green product. Green products are RoHS-Compliant
(i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

For further information on alternative packages, please visit our website:

http://www.infineon.com/packages. Dimensions in mm

Preliminary Data Sheet 23 Rev. 1.0

2018-02-21
High Current PN Half Bridge with Integrated Driver
IFX007T
Revision History

8 Revision History

Revision Date Changes

Rev. 1.0 2018-02-21 Initial release.

Preliminary Data Sheet 24 Rev. 1.0

2018-02-21
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Trademarks updated November 2015

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All referenced product or service names and trademarks are the property of their respective owners.

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Edition 2018-02-21
event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest
Published by characteristics ("Beschaffenheitsgarantie"). Infineon Technologies Office (www.infineon.com).
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