BTH50030-1LUA

Datasheet

Power PROFET™ + 24/48V smart high-side power switch

Features
• PRO-SIL™ ISO 26262-ready for supporting the integrator in evaluation of hardware element
according to ISO 26262:2018 Clause 8-13
• One channel device
• Low stand-by current
• Ground loss protection
• Electrostatic discharge protection (ESD)
• Optimized electromagnetic compatibility (EMC)
• Integrated diagnostic functions
• Integrated protection functions
• Green product (RoHS compliant)
Potential applications
• Suitable for resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Most suitable for application with high current loads, such as heating system, fan and pump
• PWM applications with low frequency
Product validation
Qualified for Automotive Applications. Product Validation according to AEC-Q100 grade 1.

Description
The device is a 3.0 mΩ single channel smart high-side power switch, available in a PG-HSOF-8 package, providing protective
functions and diagnosis. It is especially designed to drive high current loads, for applications like heaters, glow plugs, fans and
pumps.

VBAT R/ L cable

Cvs
Logic supply VS
T1
VDD
RIN Control
GPIO IN
ROL
Microcontroller

GPIO RDEN DEN Protection Optional

R/ L cable
OUT
A/D IN RIS_PROT IS
Diagnosis

CSENSE RIS COUT RLOAD

VSS GND

Application diagram

Type Package Marking

BTH50030-1LUA PG-HSOF-8 H50030A

Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Rev. 1.10
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BTH50030-1LUA
Datasheet
Table of contents

Table of contents

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.1 Product summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
1.2 Integrated diagnosis and protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.2 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.3 Thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
5 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1 Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1.1 Output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1.2 Switching resistive loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
5.1.3 PWM switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1.4 Switching inductive loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.4.1 Output clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.1.4.2 Maximum load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
5.1.5 Advanced switch-off behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.1.6 Inverse current behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.2 Digital input pins: IN and DEN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3 Protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.3.1 Overload protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.1.1 Activation of the switch into short circuit (short circuit type 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.1.2 Short circuit appearance when the device is already on (short circuit type 2) . . . . . . . . . . . . . . . . . . . 17
5.3.1.3 Overpower shutdown (PSD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
5.3.1.4 Temperature limitation in the power MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.3.2 Ground loss protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.4 Diagnosis functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.2 Diagnosis in on state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.2.1 Sense signal variation and calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5.4.2.2 Sense signal timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.4.3 Diagnosis in off state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5.5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
6 Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
7 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36

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Table of contents

8 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

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1 Product description

1 Product description

1.1 Product summary

Table 1 Product summary
Parameter Symbol Values
Operating voltage VS(NOM) 12 V … 54 V
Extended supply voltage range VS(EXT) 8 V … 60 V
Maximum on-state resistance (TJ = 150 °C) RDS(ON) 7.0 mΩ
Minimum nominal load current (TA = 85°C, 4-layer 2s2p PCB) IL(NOM) 22.5 A
Typical current sense ratio dkILIS 34000
Minimum short circuit current threshold ICL(0) 55 A
Maximum stand-by current at TJ = 25 °C IVS(OFF_L) 7 µA

1.2 Integrated diagnosis and protection functions

Integrated diagnosis functions
• Proportional load current sense
• Open load detection in on and off state
• Diagnosis enable pin
• Latched status signal after short circuit or overtemperature detection
Integrated protection functions
• Short circuit protection with latch
• Overtemperature protection with latch
• Enhanced short circuit operation
• Smart clamping for inductive loads demagnetization

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2 Block diagram

2 Block diagram
VS

Voltage sensor
Smart clamp
Temperature
sensor
Driver
Gate control &
IN logic charge pump Overcurrent
ESD
switch off OUT
protection
DEN Load current
sense ESD protection IS

GND

Figure 2 Block diagram

VS

DEN
IN
OUT
IS
RI(PULL_DOWN)
RI(PULL_DOWN)

RGND

GND

Figure 3 Internal diodes diagram

IVS
VS

VSIS VDS

IIN IN OUT IL

IDEN DEN IS IIS

VS VIN VDEN VIS VOUT

GND
IGND

Figure 4 Voltage and current definition

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3 Pin configuration

3 Pin configuration

GND 1
IS 2 Cooling
IN 3 tab
DEN 4 VS
OUT 5
OUT 6
OUT 7
OUT 8

Figure 5 Pin assignment

Table 2 Pin definitions and function

Pin Symbol Function
1 GND Ground pin
2 IS Sense pin: analog/digital signal for diagnosis, if not used: left open
3 IN Input pin: digital signal to switch on the output (active high)
4 DEN Diagnosis enable pin: digital signal to enable the diagnosis (active high)
5, 6, 7, 8 OUT Output pin: single protected high side power output
Cooling tab VS Supply voltage: battery voltage

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4 General product characteristics

4 General product characteristics

4.1 Absolute maximum ratings

Table 3 Absolute maximum ratings
TJ = -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter Symbol Values Unit Note or condition P-Number
Min. Typ. Max.
Supply voltages
Supply voltage VS -0.3 – 70 V 1) PRQ-32
Short term overvoltage VS(STO) – – 70 V 1) Short term overvoltage PRQ-34
according to ISO
21780:2020(E), test-03
RL = RL(NOM)
RIS = 2 kΩ
Short circuit capability
Supply voltage for short VS(SC) 8 – 36 V 1) According to the test PRQ-381
circuit protection circuit defined in figure 1 of
AEC Q100-012, with
LSUPPLY = 1 to 15 µH and
LSHORT = 0 to 15 µH
Supply voltage for short VS(SC) 36 – 54 V 1) According to the test PRQ-384
circuit protection circuit defined in figure 1 of
AEC Q100-012, with
LSUPPLY = 1 to 5 µH and
LSHORT = 0 to 5 µH
Supply voltage for short VS(SC) 54 – 60 V 1) According to the test PRQ-35
circuit protection circuit defined in figure 1 of
AEC Q100-012, with
LSUPPLY + LSHORT = 1 to 5 µH
Input pin (IN)
Voltage at IN pin VIN VS - 75 – VS + V 1) PRQ-36
0.3
Current through IN pin IIN -50 – 50 mA 1) PRQ-37
Maximum input fIN – – 100 Hz 1) VS in VS(EXT) range PRQ-38
frequency
Maximum retry cycle fFAULT – – 100 Hz 1) PRQ-39
rate in fault condition
Diagnosis enable pin (DEN)
Voltage at DEN pin VDEN VS - 75 – VS + V 1) PRQ-40
0.3
(table continues...)

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4 General product characteristics

Table 3 (continued) Absolute maximum ratings

TJ = -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter Symbol Values Unit Note or condition P-Number
Min. Typ. Max.
Current through DEN IDEN -50 – 50 mA 1) PRQ-41
pin
Sense and diagnosis pin (IS)
Voltage at IS pin VIS VS - 75 – VS + V 1) PRQ-42
0.3
Current through IS pin IIS -50 – 50 mA 1) PRQ-43
Power stage
Maximum energy EAS – – 175 mJ 1) IL = 17 A, TJ(0) ≤ 150°C PRQ-313
dissipation by switching
off inductive load single
pulse over lifetime
Maximum energy EAR – – 100 mJ 1)IL = 17 A, TJ(0) ≤ 105°C, 1 PRQ-314
dissipation repetitive million cycles
pulse See Figure 6
Voltage at OUT pin VS - VOUT -0.3 – 70 V 1) PRQ-46
Temperatures
Junction temperature TJ -40 – 150 °C 1) PRQ-47
Dynamic temperature ΔTJ – – 60 K 1) PRQ-48
increase while switching
Storage temperature TSTG -55 – 150 °C 1) PRQ-49
ESD susceptibility
ESD susceptibility (all VESD(HBM) -2 – 2 kV 1) Human Body Model PRQ-50
pins) "HBM" according to the
AEC Q100-002
ESD susceptibility OUT VESD(HBM) -4 – 4 kV 1) Human Body Model PRQ-51
vs GND and VS "HBM" according to the
connected AEC Q100-002
ESD susceptibility (all VESD(CDM) -500 – 500 V 1) Charge Device Model PRQ-52
pins) "CDM" according to AEC
Q100-11
ESD susceptibility VESD(CDM) -750 – 750 V 1) Charge Device Model PRQ-53
(corner pins) "CDM" according to AEC
Q100-11
1) Not subject to production test, specified by design.

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4 General product characteristics

Figure 6 Maximum energy dissipation for inductive switch off, EAS/AR vs. IL
EAR derating

Tj(0) [°C]

Figure 7 Maximum energy dissipation repetitive pulse temperature derating

Note: 1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions
are not designed for continuous repetitive operation.

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4 General product characteristics

4.2 Functional description

Table 4 Functional range

Parameter Symbol Values Unit Note or condition P-Number

Min. Typ. Max.
Supply voltage range for VS(NOM) 12 – 54 V 1) PRQ-54
nominal operation
Supply voltage range for VS(EXT) 8 – 60 V 1) 2)
Parameter deviation PRQ-55
extended operation possible, long term
overvoltage according to
ISO 21780:2020(E), test-06
Nominal load resistor RL(NOM) – 2.8 – Ω 1) PRQ-299
Condition for accurate Min(VS-VIS) – – 8 V 1) PRQ-312
current measurement
1) Not subject to production test, specified by design.
2) Protection function still operative

Note: Within the nominal operating range, the IC behaves as described in the circuit description.
The electrical characteristics are inside the limits specified in the Electrical Characteristics table.

4.3 Thermal resistance

Note: This thermal data was generated in accordance to JEDEC JESD51 standards. For more information, go
to www.jedec.org.

Table 5 Thermal resistance

Parameter Symbol Values Unit Note or condition P-Number

Min. Typ. Max.
Junction to case RthJC – – 0.6 K/W 1) PRQ-300
Junction to ambient RthJA(2s2p) – 18 – K/W 1) PRQ-301
2)

Junction to ambient RthJA(1s0p) – 32 – K/W 1) PRQ-302

/600mm² 3)

1) Not subject to production test, specified by design.

2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; the product (chip + package) was
simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 µm Cu, 2 × 35 µm Cu). Where applicable a thermal via array
under the exposed pad contacted the first inner copper layer. Simulation done at TA = 105°C. The device is dissipating 2 W power.
3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; the product (chip + package) was
simulated on a 76.2 × 114.3 × 1.5 mm board with only one top copper layer 1 × 70 µm. Simulation done at TA = 105°C. The device is
dissipating 2 W power.

Figure 8 is showing the typical thermal impedance of BTH50030-1LUA mounted according to JEDEC JESD51-2,-5,-7 at
natural convection on FR4 1s0p and 2s2p boards.

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4 General product characteristics

100
JEDEC 1s0p / 600mm²

JEDEC 1s0p / 300mm²

JEDEC 1s0p / footprint

10
JEDEC 2s2p
ZthJA [K/W]

0.1

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
time [sec]

Figure 8 Typical transient thermal impedance Zth(JA) = f(time) for different PCB conditions

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5 Functional description

5 Functional description

5.1 Power stage

The power stage is built by a N-channel power MOSFET with a charge pump.

5.1.1 Output on-state resistance

The on-state resistance RDS(ON) depends on the supply voltage and on the junction temperature TJ. Chapter 6 shows
the dependencies in terms of temperature and supply voltage, for the typical on-state resistance.

5.1.2 Switching resistive loads

Figure 9 shows the typical timing when switching a resistive load. The power stage has a defined switching
behavior. Defined slew rates results in lowest EMC emission at minimum switching losses.

VIN

t
VOUT
tON(DELAY) tr tOFF(DELAY) tf
80% VS

50% VS
dVON/dt dVOFF/dt
25% VS
20% VS

t
Figure 9 Timings when switching a resistive load

5.1.3 PWM switching

Consider the switching losses properly during this operation (see following equation):

switcℎ_on_energy + switcℎ_off_energy + I L2 × RDS ON × tDC

PTOTAL =
Period
(1)

If a fault condition occurs, ensure that the PWM frequency does not exceed a maximum retry frequency of fFAULT.

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5 Functional description

VIN

VI(H)MAX
VI(L)MIN
t
Power
Switch_off_energy

RDS(ON)*(IL)²
tDC t
Switch_on_energy

Figure 10 Switching in PWM

5.1.4 Switching inductive loads

5.1.4.1 Output clamping

When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential, since the
voltage polarity across the inductor has to be reversed to get a decrease of the inductive load current.
To prevent the destruction of the device due to high voltages, there is a smart clamping mechanism implemented
that keeps negative output voltage to a certain level (VS - VDS(CL)). Please refer to Figure 11 and Figure 12 for details.
Nevertheless, the maximum allowed load inductance remains limited.

VS

Smart VDS
clamp
VS IN
LOGIC
OUT IL

VIN
GND VOUT L, RL

Figure 11 Output clamp

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5 Functional description

VIN

t
VOUT
VS

VS-VDS(FAST_OFF) t
VS-VDS(CL)

IL

t
TJ

TJ(0)
t
Figure 12 Switching an inductance
The device features a fast switch off when driving an inductive load in order to increase the energy capability. The fast
turn off is triggered when VDS is higher than VDS(FAST_OFF). Please refer to Figure 12 for details.
The device must not be reactivated (VIN goes from low to high) before tIN(RESETDELAY). Otherwise the device may not
turn on and can be latched.

5.1.4.2 Maximum load inductance

During the demagnetization of inductive loads, the energy stored in the inductance must be dissipated in the device.
This energy can be calculated with the following equation (2), where RL is the parasitic resistance of the inductance:

V S − V DS CL RL × I L
E = V DS CL × L × × ln 1 − + IL
RL RL V S − V DS CL
(2)

(2) can be simplified under the assumption that RL = 0 Ω. It then becomes:

VS
E = 1 × L × I L2 × 1 −
V S − V DS CL
(3)
2

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5 Functional description

The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 6 for the
maximum allowed energy dissipation as a function of the load current.

5.1.5 Advanced switch-off behavior

In order to reduce the device stress when switching off inductive and critical loads, the device provides a functionality
which results in a faster switch off behavior.
The fast switch off functionality is triggered by each of the following conditions:
• The device is turned off by applying VIN < VI(L)MIN. During the switch off operation, VOUT drops below VS-
VDS(FAST_OFF). See Figure 12.
• The device is turned on or is already in on state (VIN > VI(H)MAX). The device then detects a short circuit condition (IL
≥ ICL(0)) and initiates a protective switch off. Please refer to Chapter 5.3.1.1 and Chapter 5.3.1.2 for details.
• The device is turned on or is already in on state (VIN > VI(H)MAX). The device then detects an overpower condition.
Please refer to Chapter 5.3.1.3 for details.

5.1.6 Inverse current behavior

When VOUT > VS, a current -IL flows into the power output transistor (see Figure 13). This condition is known as inverse
current.
If the channel is in off state, the current flows through the intrinsic body diode generating high power losses and
therefore, an increase of the overall device temperature.
If the channel is in on state, RDS(INV) can be expected and power dissipation in the output stage is comparable to
normal operation in RDS(ON).
During inverse current condition, the channel remains in on or off state as long as | IL | < | IL(NOM) |.

CASE 1: inverse current happens CASE 2: inverse current happens

VIN when DMOS is on VIN when DMOS is off

ON OFF
t t
IL IL
NORMAL NORMAL NORMAL NORMAL
INVERSE t INVERSE t
DMOS state DMOS state

ON OFF
t t
Figure 13 Channel behavior in case of applied inverse current

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5 Functional description

5.2 Digital input pins: IN and DEN

This section applies to the two digital pins of the device: IN and DEN.
The input circuitry is compatible with 3.3 V and 5 V logic levels. These two pins can also be directly tied to VS.
The input circuitry tolerates negative voltages down to VS-75 V: see the limits for parameters VIN and VDEN in Table 3.
The Figure 14 below shows the electrical equivalent input circuitry.

VS

To internal
IN or logic
DEN

RI(PULL_DOWN) RGND

GND

Figure 14 Simplified schematics of the input pins circuitry

5.3 Protection functions

The device provides integrated protective functions. They are designed to prevent the destruction of the IC when it is
exposed to fault conditions described in the present datasheet. These fault conditions are considered as outside the
normal operating range. Protection functions are designed neither for continuous nor for repetitive operation.
The Figure 15 below describes the typical functionality of the diagnosis and protection blocks.

VS

IN Open load
in off
ESD Driver
protection 1 0 1
DEN
OUT

IIS(FAULT) Power Overcurrent

1 shutdown detection
1
0
0 IL
+ IISO
dkILIS ESD
IS
Temperature & protection
sensor 1 R Q
TJ >TJ(TRIP)
tIN(RESETDELAY) S Q Fault
1 &
IL>ICL(0)

Figure 15 Diagram of diagnosis and protection blocks

Datasheet 16 Rev. 1.10

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5 Functional description

5.3.1 Overload protection

In case of overload, high inrush current or short circuit to ground, the device offers several protection mechanisms.
An overcurrent, an overtemperature or an overpower shutdown switches off the output and latches the device.
There are 2 ways to reset the internal latch:
• Set VIN < VI(L)MIN for t > tIN(RESETDELAY)
• Set VS < VS(UVL) for t > tIN(RESETDELAY)
For overload (short circuit or overtemperature), the maximum retry cycle (fFAULT) under fault condition must be
considered.

5.3.1.1 Activation of the switch into short circuit (short circuit type 1)
When the switch is activated into short circuit, the current rises rapidly. When the output current reaches ICL(0) value,
the device is latched and turns off after tOFF(TRIP) which leads to an overshoot on the output current above ICL(0).

5.3.1.2 Short circuit appearance when the device is already on (short circuit type 2)
When the device is in on state and a short circuit to ground appears at the output with an overcurrent higher than
ICL(0), the device automatically turns off and latches.

5.3.1.3 Overpower shutdown (PSD)

The device integrates an overpower shutdown protection in order to limit the power dissipation. The target is to limit
the maximum junction temperature in case of:
• A soft short circuit, where the short circuit resistance is too high to trigger the overcurrent protection (IL < ICL(0))
• Repetitive short circuits
• A short circuit in applications with a high resistor and/or inductor in the battery line, where VS drops below
VS(PSD) and the load current does not reach the ICL(0)
In such conditions, the overpower shutdown protection is activated and latches the device after tPSD(UV).

Note: It also limits the maximum PWM frequency below the maximum value of fIN. See Figure 16 below:

VDEN

Input frequency Input frequency Input frequency t

VIN < max(fIN) > max(fIN) < max(fIN)

t
VOUT Normal operation Missing pulses Normal operation

t
IIS Device latches
IIS(FAULT)
IL
dkILIS + IS0
t
Figure 16 Behavior during PWM operation above the maximum value of fIN

Datasheet 17 Rev. 1.10

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5 Functional description

VIN Short-circuit type 2 Short-circuit type 1

t
VS

VS(PSD)
VS(UVL)

t
IL
ICL(0)

t
VDS

VS
VDS(PSD)
t
IIS
IIS(FAULT)

tPSD(UV) tPSD(UV) t

Figure 17 Overpower shutdown behavior during supply voltage drops

5.3.1.4 Temperature limitation in the power MOSFET

The device incorporates a temperature sensor. Triggering the overtemperature (TJ > TJ(TRIP)) switches off the power
MOSFET to prevent destruction and latches the device.

5.3.2 Ground loss protection

In case of loss of device ground, while the load remains connected to ground, the device protects itself by
automatically turning off (when it was previously on) or remains off, regardless of the voltage applied at IN pin.

Datasheet 18 Rev. 1.10

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5 Functional description

5.4 Diagnosis functions

For diagnosis purposes, the device provides on the IS pin, either an image of the output load current, or a constant
fault current.

VS

IL
+ IIS0 IIS(FAULT)
dkILIS
1
Fault
0 1
DEN IS
0
Figure 18 Diagnosis block diagram

5.4.1 Overview
Operation mode VIN VDEN VOUT Diagnosis output
Normal condition Low (OFF) High GND IIS(OFF)
Short circuit to GND GND IIS(OFF)
Overtemperature GND IIS(OFF)
Short circuit to VS VS IIS(FAULT)
Open load VOUT > VOUT(OL_OFF) 1) IIS(FAULT)
VOUT < VOUT(OL_OFF) IIS(OFF)
Normal condition High (ON) ~ VS IIS = (IL / dkILIS) + IIS0
Short circuit to GND GND IIS(FAULT)
Overtemperature GND IIS(FAULT)
Short circuit to VS VS IIS ≤ (IL / dkILIS) + IIS0
Open load VS IIS0 if positive, IIS(OFF) if
negative
All conditions N.a. Low N.a. IIS(OFF)
1) With additional pull-up resistor

5.4.2 Diagnosis in on state

A current proportional to the load current is provided at pin IS when the following conditions are fulfilled:
• The power output stage is switched on with (VS - VIS) > Min(VS-VIS)
• The diagnosis is enabled (VDEN > VI(H))
• No fault is present or was present
• The RIS recommended value is 2kΩ

Datasheet 19 Rev. 1.10

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5 Functional description

A current IIS(FAULT) is provided at IS pin when:

• The device is latched due to a previous overcurrent, overtemperature or overpower
• The diagnosis is enabled (VDEN > VI(H))
Figure 19 and Figure 21 show the current sense as a function of the load current in the power MOSFET.
Usually, a pull-down resistor RIS is connected to the current sense pin IS.
The dotted curve represents the typical sense current, assuming a typical dkILIS factor value.
The area between the two solid curves shows the current sense accuracy the device is able to provide.

IL
I IS = + I IS0 witℎ I IS ≥ 0 (4)
dkILIS

Where the definition of dkILIS is:

I L2 − I L1
dkILIS =
I IS2 − I IS1
(5)

the definition IIS0 is:

I L1
I IS0 = I IS1 − (6)
dkILIS

and the definition of IL0 is:

I L0 = I L1 − I IS1 × dkILIS (7)

1
2 dkILIS(MIN)
MAX
1
TYP dkILIS
1.5 MIN 1
dkILIS(MAX)
IIS [mA]

0.5

0
0 20 40 60
IL1 IL2
IL[A]
Figure 19 Current sense at IS pin as a function of load current

Datasheet 20 Rev. 1.10

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5 Functional description

5.0 1
MAX dkILIS(MIN)
TYP 1
2.5 dkILIS
MIN IIS0(MAX) 1
IL0(MIN)
IIS [µA]

dkILIS(MAX)
0.0
IL0(MAX)
IIS0(MIN)
-2.5

-5.0
-0.1 -0.05 0 0.05 0.1
IL[A]
Figure 20 IIS0 and IL0 definition

5.4.2.1 Sense signal variation and calibration

In some applications, an enhanced accuracy is required around the device nominal current range IL(NOM). To improve
the accuracy, a calibration in the application can be implemented; the best results are achieved using a two-point
calibration.
Once calibrated, the IIS variation over temperature and aging can be described with the parameters ∆(dkILIS(CAL)) and
the ∆IIS0(CAL).
The grey solid line in Figure 21 is the current sense ratio calculated from the two-point calibration at a given
temperature.
The slope of this line is calculated as:

I IS CAL 2 − I IS CAL 1
=
I L CAL 2 − I L CAL 1
1 (8)
dkILIS CAL

The offset is calculated as:

I L CAL 1 I L CAL 2
I IS0 CAL = I IS CAL 1 − = I IS CAL 2 − (9)
dkILIS CAL dkILIS CAL

These two parameters, slope and offset, are accurate when the device is operated at the same ambient temperature
as the one used during the calibration.
However, both parameters are temperature and lifetime dependant by a few percent, which results in an additional
inaccuracy when the ambient temperature changes or when the device has been operated for a long time.
The grey area in Figure 21 shows the range of values for these two parameters across temperature and load current.
It is visible that the accuracy of the load current sensing is improved, when compared to the darkest lines showing the
spread without calibration.

Datasheet 21 Rev. 1.10

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5 Functional description

In the application, when a sense current value IIS is measured, the corresponding load current can be calculated as
follows:

I L = dkILIS CAL × 1 + Δ dkILIS CAL × I IS − I IS0 CAL − ΔI IS0 CAL (10)

where:
• dkILIS(CAL) is the current sense ratio calculated after two-points calibration, as defined in (8)
• ∆(dkILIS(CAL)) is the additional variation of the current sense ratio over life time and temperature (in absolute
value, not in percentage)
• IIS0(CAL) is the current sense offset calculated after two points calibration, as defined in (9), and
• ∆IIS0(CAL) is the additional variation of the offset over life time and temperature (in absolute value, not in
percentage)

For a calibration at 25°C, ∆IIS0(CAL) varies over temperature and life time according to the following equations. For
positive IIS0(CAL) values (IIS0(CAL) > 0):

MaxI IS0 @T J = 150°C − MaxI IS0 @T J = 25°C ≤ ΔI IS0 CAL ≤ MaxI IS0 @T J = − 40°C − MaxI IS0 @T J = 25°C (11)

For negative IIS0(CAL) values (IIS0(CAL) < 0):

MinI IS0 @T J = 150°C − MinI IS0 @T J = 25°C ≥ ΔI IS0 CAL ≥ MinI IS0 @T J = − 40°C − MinI IS0 @T J = 25°C (12)

(10) actually provides four solutions for load current, considering that ∆(dkILIS(CAL)) and ∆IIS0(CAL) can both be positive
or negative. The load current IL corresponding to a known sense current IIS spreads between:
• A minimum IL value resulting from the combination of lowest ∆(dkILIS(CAL)) value and highest ∆IIS0(CAL) and
• A maximum IL value resulting from the combination of highest ∆(dkILIS(CAL)) value and lowest ∆IIS0(CAL)

Datasheet 22 Rev. 1.10

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5 Functional description

IIS
1
dkILIS(MIN) 1
dkILIS(CAL)-ΔdkILIS(CAL)

1
IIS(CAL)2 dkILIS(CAL)
1
dkILIS(CAL)+ΔdkILIS(CAL)
IIS
1
IIS(CAL)1 dkILIS(MAX)

IIS0(CAL)+ΔIIS0(CAL) IL IL(CAL) IL(CAL) IL(CAL) IL

IIS0(CAL) Min. Min. Typ. Max. Max. IL
IIS0(CAL)-ΔIIS0(CAL) IL(CAL)1 IL(CAL)2
Figure 21 Improved current sense accuracy after 2 points calibration

5.4.2.2 Sense signal timing

The Figure 22 below shows the timings at turn on and when enabling/disabling the current sense feature through the
DEN pin:

VIN

OFF ON OFF
VDEN t

IL t

IIS tsIS(IN_ON) tsIS(LC) tsIS(DEN_OFF) tsIS(DEN_ON) t

t
Figure 22 Current sense timing in normal operation
The Figure 23 below describes the IS pin behavior under protection conditions:

Datasheet 23 Rev. 1.10

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5 Functional description

VDEN

t > tIN(RESETDELAY) t > tIN(RESETDELAY) t

VIN

IL tOFF(TRIP) tOFF(TRIP) t
ICL(5)
ICL(0)

TJ t
TJ(TRIP)

TA
IIS t
tpIS(FAULT_OT)
IIS(FAULT)

t
short circuit 2

short circuit 1

temperature
start

latch is reset

latch is reset

over

Figure 23 IS pin behavior under protection

5.4.3 Diagnosis in off state

The device features a detection of open load when it is in off state. An internal comparator is monitoring VOUT. If
VOUT > VOUT(OL_OFF) and VDEN > VI(H)MAX, the current at IS pin is IIS(FAULT).
In order to pull-up OUT in case of open load condition, an external pull-up resistor must be connected between VS
and OUT pins. This external resistor must be switchable to keep the quiescent current as low as possible on VS pin.

VIN

ON OFF ON OFF
VDEN t

IIS tpFAULT_OL(IN_OFF) tpFAULT_OL(IN_OFF) tpFAULT_OL(DEN_OFF) tpFAULT_OL(DEN_ON) t

IIS(FAULT)
IIS(OFF) IIS(OFF) IIS(OFF)
t
VOUT tOFF(DELAY) + tf + tpFAULT_OL(IN_OFF)

VOUT(OL_OFF)
t
Regular switch off
No load connected
with load connected

Figure 24 Behavior of the open load detection in off feature with and without load connected

Datasheet 24 Rev. 1.10

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5 Functional description

5.5 Electrical characteristics

Table 6 Electrical characteristics table
VS = 12 V to 54 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical
values are specified at VS = 48 V, TJ = 25°C.

Parameter Symbol Values Unit Note or condition P-Number

Min. Typ. Max.
Operating and standby currents
Standby current on VS IVS(OFF_L) – 5 7 µA VIN = VDEN = VOUT = 0 V, PRQ-65
pin with load RIS = 2 kΩ, TJ ≤ 85°C,
7 ms after VIN ≤ VI(L)MIN
Standby current on VS IVS(OFF_L) – 10 100 µA VIN = VDEN = VOUT = 0 V, PRQ-67
pin with load RIS = 2 kΩ, TJ ≤ 150°C,
7 ms after VIN ≤ VI(L)MIN
Standby current on VS IVS(OFF_DEN) – 200 400 µA VIN = VOUT = 0 V, PRQ-66
pin with load and DEN VDEN = 5 V,
active
RIS = 2 kΩ, TJ ≤ 85°C,
7 ms after VIN ≤ VI(L)MIN
Supply current on GND IGND(ON_dig-lev) – 2.5 4.2 mA VI(H)MAX ≤ VIN ≤ 5.5 V PRQ-68
pin in on state with VI(H)MAX ≤ VDEN ≤ 5.5 V
digital level on IN pin
Supply current on GND IGND(ON_High-V) – 3 5.5 mA 5.5 V < VIN ≤ VS PRQ-324
pin in on state with high 5.5 V < VDEN ≤ VS
voltage on IN pin
Ground resistor RGND 130 180 230 Ω – PRQ-69
Power stage
On-state resistance in RDS(ON) – 3.0 – mΩ 1) TJ = 25°C PRQ-303
forward condition
On-state resistance in RDS(ON) – 5.8 7.0 mΩ TJ = 150°C PRQ-304
forward condition
On-state resistance in RDS(INV) – 3.0 7.0 mΩ – PRQ-352
inverse condition
Nominal load current IL(NOM) 22.5 25 – A 1) T
A = 85°C, TJ ≤ 150°C PRQ-310
RthJA(2s2p)
Drain to source smart VDS(CL) 70 76 – V VDS(CL) = VS - VOUT PRQ-89
clamp voltage IL = 10 mA
Drain to source smart VDS(CL_SC) – 70 – V VDS(CL_SC) = VS - VOUT after PRQ-329
clamp voltage after a activation of the short-
short-circuit detection circuit protection (IL > ICL(0))
Body diode forward VF – 0.6 0.8 V IL = -25A, TJ = 150°C PRQ-91
voltage
(table continues...)

Datasheet 25 Rev. 1.10

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5 Functional description

Table 6 (continued) Electrical characteristics table

VS = 12 V to 54 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical
values are specified at VS = 48 V, TJ = 25°C.

Parameter Symbol Values Unit Note or condition P-Number

Min. Typ. Max.
Output leakage current IOUT(OFF) – 10 20 µA VIN = VDEN = VOUT = 0 V, PRQ-92
VS = 60 V, TJ ≤ 85°C,
7 ms after VIN < VI(L)MIN
Output leakage current IOUT(OFF) – 10 50 µA VIN = VDEN = VOUT = 0 V, PRQ-93
VS = 60 V, TJ ≤ 150°C, 7 ms
after VIN < VI(L)MIN
Turn on slew rate dVON/dt 0.75 1.5 3 V/µs VOUT from 25% to 50% of VS PRQ-94
RL = RL(NOM), VS = 48 V
Turn on slew rate dVON/dt 0.22 0.5 1 V/µs 1) VOUT from 25% to 50% of PRQ-389
VS
RL = RL(NOM) / 2, VS = 24 V
Turn off slew rate -dVOFF/dt 0.75 1.5 3 V/µs VOUT from 50% to 25% of VS PRQ-97
RL = RL(NOM), VS = 48 V
Turn off slew rate -dVOFF/dt 0.22 0.5 1 V/µs 1) V
OUT from 50% to 25% of PRQ-390
VS
RL = RL(NOM) / 2, VS = 24 V
Rising time during turn tr 15 35 70 µs VOUT from 20% to 80% of VS PRQ-100
on RL = RL(NOM), VS = 48 V
Rising time during turn tr 17 45 90 µs 1) VOUT from 20% to 80% of PRQ-391
on VS
RL = RL(NOM) / 2, VS = 24 V
Falling time during turn tf 15 35 70 µs VOUT from 80% to 20% of VS PRQ-103
off RL = RL(NOM), VS = 48 V
Falling time during turn tf 17 45 90 µs 1) VOUT from 80% to 20% of PRQ-392
off VS
RL = RL(NOM) / 2, VS = 24 V
Turn on time tON(DELAY) 22 55 125 µs From (VIN > VI(H)) to PRQ-106
VOUT = (20% x VS)
RL = RL(NOM), VS = 48 V
Turn on time tON(DELAY) 22 65 150 µs 1) From (V
IN > VI(H)) to PRQ-393
VOUT = (20% x VS)
RL = RL(NOM) / 2, VS = 24 V
Turn off time tOFF(DELAY) 50 130 225 µs From (VIN < VI(L)) to PRQ-109
VOUT = (80% x VS)
RL = RL(NOM), VS = 48 V
(table continues...)

Datasheet 26 Rev. 1.10

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5 Functional description

Table 6 (continued) Electrical characteristics table

VS = 12 V to 54 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical
values are specified at VS = 48 V, TJ = 25°C.

Parameter Symbol Values Unit Note or condition P-Number

Min. Typ. Max.
Turn off time tOFF(DELAY) 40 110 200 µs 1) From (V
IN < VI(L)) to PRQ-394
VOUT = (80% x VS)
RL = RL(NOM) / 2, VS = 24 V
Switch on energy EON – 12.5 – mJ 1) RL = RL(NOM), VS = 48 V PRQ-305
Switch on energy EON – 9 – mJ 1) RL = RL(NOM) / 2, VS = 24 V PRQ-396
Switch off energy EOFF – 10 – mJ 1) RL = RL(NOM), VS = 48 V PRQ-306
Switch off energy EOFF – 7 – mJ 1) RL = RL(NOM) / 2, VS = 24 V PRQ-398
VS pin
Power supply VS(UVL) 3.0 3.7 4.4 V VS decreasing PRQ-118
undervoltage shutdown
Power supply VS(UVH) 4.2 5.0 6.0 V VS increasing PRQ-119
undervoltage turn on
Digital input pins: IN and DEN
High level input VI(H) – – 2.5 V – PRQ-120
threshold
Low level input VI(L) 0.5 – – V – PRQ-121
threshold
Input voltage hysteresis VI(HYS) – 0.2 – V – PRQ-122
Input pull-down resistor RI(PULL_DOWN) 100 200 – kΩ – PRQ-123
Protection: overload
Current trip detection ICL(0) 55 85 110 A TJ = -40°C PRQ-403
level
Current trip detection ICL(0) 55 80 100 A 1) TJ = 25°C PRQ-307
level
Current trip detection ICL(0) 55 75 90 A TJ = 150°C PRQ-404
level
Current trip maximum ICL(5) 55 100 125 A dIL/dt = 5 A/µs PRQ-407
level at 5 A/µs TJ = -40°C
Current trip maximum ICL(5) 55 95 115 A 1) dI
L/dt = 5 A/µs PRQ-308
level at 5 A/µs TJ = 25°C
Current trip maximum ICL(5) 55 90 105 A dIL/dt = 5 A/µs PRQ-408
level at 5 A/µs TJ = 150°C
Overload shutdown tOFF(TRIP) – 3.5 6 µs – PRQ-309
delay time
(table continues...)

Datasheet 27 Rev. 1.10

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5 Functional description

Table 6 (continued) Electrical characteristics table

VS = 12 V to 54 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical
values are specified at VS = 48 V, TJ = 25°C.

Parameter Symbol Values Unit Note or condition P-Number

Min. Typ. Max.
Thermal shutdown TJ(TRIP) 150 175 200 °C 1) VS in VS(EXT) range PRQ-141
temperature
Over power shutdown VDS(PSD) 1.25 1.5 1.75 V 1) PRQ-142
detection level
Over power shutdown VS(PSD) 3.25 4.25 5.25 V 1) PRQ-143
activation level
Over power shutdown tPSD(UV) 10 100 350 µs Start: when [VS < VS(PSD) PRQ-144
time and VDS > VDS(PSD)]
Stop: when IIS > 80%
IIS(FAULT)
Diagnosis function: current sense characteristics
Current sense dkILIS 31500 34000 36500 – IL0 max ≤ IL ≤ ICL(0) min PRQ-145
differential ratio VS - VIS ≥ Min(VS - VIS)
Calculated offset on IL IL0 -50 0 50 mA VS - VIS ≥ Min(VS - VIS) PRQ-316
when IS= 0 A at Tj = TJ = -40°C
-40°C
Calculated offset on IL IL0 -40 0 40 mA 1)VS - VIS ≥ Min(VS - VIS) PRQ-317
when IS= 0 A at Tj = 25°C TJ = 25°C
Calculated offset on IL IL0 -30 0 30 mA VS - VIS ≥ Min(VS - VIS) PRQ-318
when IS= 0 A at Tj = TJ = 150°C
150°C
Calculated offset on IS IIS0 -1.37 0 1.59 µA 1)VS - VIS ≥ Min(VS - VIS) PRQ-319
when IL = 0 A at Tj = TJ = -40°C
-40°C
Calculated offset on IS IIS0 -1.10 0 1.27 µA 1) V
S - VIS ≥ Min(VS - VIS) PRQ-320
when IL = 0 A at Tj = TJ = 25°C
25°C
Calculated offset on IS IIS0 -0.83 0 0.96 µA 1)VS - VIS ≥ Min(VS - VIS) PRQ-321
when IL = 0 A at Tj = TJ = 150°C
150°C
Current sense ratio Δ(dkILIS(CAL)) -5 0 +5 % 1) PRQ-168
spread over
temperature and
repetitive pulse
operation
(table continues...)

Datasheet 28 Rev. 1.10

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5 Functional description

Table 6 (continued) Electrical characteristics table

VS = 12 V to 54 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical
values are specified at VS = 48 V, TJ = 25°C.

Parameter Symbol Values Unit Note or condition P-Number

Min. Typ. Max.
Diagnosis function in normal conditions
Current sense settling tsIS(IN_ON) – 800 1700 µs RL = RL(NOM) PRQ-169
time until IIS reached
final value +/-3%
Current sense settling tsIS(DEN_ON) 0 25 85 µs VS – VIS ≥ 5V PRQ-172
time until IIS reached RL = RL(NOM)
final value +/-3% after
activation of DEN
Current sense disable tsIS(DEN_OFF) 0 10 20 µs From DEN falling edge to IIS PRQ-173
time = IIS(OFF)
Current sense settling tsIS(LC) – 40 – µs 1) IL ≥ IL0(MAX) PRQ-174
time after load change
IIS leakage current IIS(OFF) – – 1 µA VIN < VI(L) RIS = 2 kΩ PRQ-175
when IN disabled TJ ≤ 150°C
Diagnosis function in overload condition
Sense signal current in IIS(FAULT) 2.3 3.0 5.2 mA (VS - VIS) ≥ 5 V Typical value PRQ-176
fault condition for VS - VIS ≥ Min(VS - VIS)
Fault propagation time tpIS(FAULT_OT) – 2.0 3.3 ms 1) PRQ-178
for over temperature
detection
Delay time to reset fault tIN(RESETDELAY) 0.006 – 10 ms – PRQ-179
pin after turning off VIN
Diagnosis function: open load detection in off
Open load detection VOUT(OL_OFF) 2.5 3 3.5 V VIN < VI(L) and VDEN > VI(H) PRQ-180
threshold in off state
voltage control
Fault propagation time tpFAULT_OL(IN_O – 5 20 µs From falling edge on VIN to PRQ-181
for open load detection FF) IS(FAULT) on IS pin
off during turn off VDEN > VI(H)
VOUT > VOUT(OL_OFF)
Fault propagation time tpFAULT_OL(DEN_ – 5 20 µs From rising edge PRQ-182
for open load detection ON) on VDEN to IIS(FAULT) on IS
off after activation of pin
DEN VIN < VI(L)
VOUT > VOUT(OL_OFF)
(table continues...)

Datasheet 29 Rev. 1.10

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5 Functional description

Table 6 (continued) Electrical characteristics table

VS = 12 V to 54 V, TJ = -40°C to +150°C unless otherwise specified. For a given temperature or voltage range, typical
values are specified at VS = 48 V, TJ = 25°C.

Parameter Symbol Values Unit Note or condition P-Number

Min. Typ. Max.
Disable time of tpFAULT_OL(DEN_ – 5 20 µs From falling edge PRQ-183
IIS(FAULT) in off OFF) on VDEN to IIS(OFF) on IS pin
condition after VIN < VI(L)
desactivation of DEN
1) Not subject to production test, specified by design.

Datasheet 30 Rev. 1.10

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Datasheet
6 Typical performance characteristics

6 Typical performance characteristics

Standby current for whole device with load, Standby current for whole device with load,
IVS(OFF) = f(VS, TJ) IVS(OFF) = f(TJ), at VS = 48 V
20.0 12.0
-40°C
48 V
18.0 25°C

85°C
10.0
16.0 150°C

14.0
8.0
12.0

IVS(OFF) [µA]
IVS(OFF) [µA]

10.0 6.0

8.0
4.0
6.0

4.0
2.0

2.0

0.0 0.0
0 10 20 30 40 50 60 70 -40 -20 0 20 40 60 80 100 120 140 160
TJ [°C]
VS [V]

GND current when IN and DEN are biased to VS, GND current when IN and DEN are biased to 5.5 V,
IGND(ON_High-V) = f(VS, TJ) IGND(ON_dig-lev) = f(VS, TJ)

5.0 5.0
-40°C -40°C
4.5 25°C 4.5 25°C
150°C 150°C
4.0 4.0

3.5 3.5
IGND(ON_High-V) [mA]

IGND(ON_dig-lev) [mA]

3.0 3.0

2.5 2.5

2.0 2.0

1.5 1.5

1.0 1.0

0.5 0.5

0.0 0.0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

VS [V] VS [V]

Figure 25 Typical performance characteristics

Datasheet 31 Rev. 1.10

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Datasheet
6 Typical performance characteristics

On state resistance at IL = 35 A On state resistance at IL = 35 A and VS = 48 V

RDS(ON) = f(VS, TJ) RDS(ON) = f(TJ)

6.0 6.0

5.5 48 V
5.0 5.0

4.5

4.0 4.0

3.5
RDS(ON) [mΩ]

RDS(ON) [mΩ]
3.0 3.0

2.5

2.0 2.0

1.5
-40°C 0°C
1.0 25°C 85°C 1.0

0.5 105°C 150°C

0.0 0.0
0 10 20 30 40 50 60 70 -40 -20 0 20 40 60 80 100 120 140 160
VS [V] TJ [°C]

Turn on time Turn off time

tON(DELAY) = f(VS, TJ), RL = 2.5 Ω tOFF(DELAY) = f(VS, TJ), RL = 2.5 Ω

160 160
-40°C
25°C
140 150°C
140

120 120

100 100
-40°C
tON(DELAY) [µs]

25°C
tOFF(DELAY) [µs]

80 80 150°C

60 60

40 40

20 20

0 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

VS [V] VS [V]

Figure 26 Typical performance characteristics (continued)

Datasheet 32 Rev. 1.10

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Datasheet
6 Typical performance characteristics

Slew rate at turn on Slew rate at turn off

dVON/dt = f(VS, TJ), RL = 2.5 Ω -dVOFF/dt = f(VS, TJ), RL = 2.5 Ω

2.5 2.5
-40°C -40°C
25°C
25°C
150°C
150°C
2 2

1.5 1.5
dVON/dt [V/µs]

-dVOFF/dt [V/µs]
1 1

0.5 0.5

0 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70
VS [V]
VS [V]
Energy at turn on Energy at turn off
EON = f(VS, TJ), RL = 2.5 Ω EOFF = f(VS, TJ), RL = 2.5 Ω

20.0 20.0

18.0 -40°C 18.0 -40°C

25°C 25°C
16.0 16.0 150°C
150°C

14.0 14.0

12.0 12.0
EOFF [mJ]
EON [mJ]

10.0 10.0

8.0 8.0

6.0 6.0

4.0 4.0

2.0 2.0

0.0 0.0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

VS [V] VS [V]

Figure 27 Typical performance characteristics (continued)

Datasheet 33 Rev. 1.10

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Datasheet
6 Typical performance characteristics

Drain to source smart clamp voltage On resistance in inverse at IL = -35 A

VDS(CL) = f(TJ) RDS(INV) = f(VS, TJ)

80.0 7.0
-40°C

78.0 25°C

6.0 150°C

76.0

74.0 5.0

RDS(INV) [mΩ]
72.0
4.0
VDS(CL) [V]

70.0
3.0
68.0

66.0 2.0

64.0
1.0
62.0

60.0 0.0
-40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70

TJ [°C] VS [V]
Voltage on IS in fault Current sense differential ratio
VIS = f(VS, TJ), RIS = 2.0 kΩ dkILIS = f(TJ)

10 45
-40°C
25°C
150°C

8
40

6
dkILIS [k]
vIS [V]

35

30
2

0 25
0 10 20 30 40 50 60 70 -40 -20 0 20 40 60 80 100 120 140 160

VS [V] TJ [°C]

Figure 28 Typical performance characteristics (continued)

Datasheet 34 Rev. 1.10

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Datasheet
6 Typical performance characteristics

Thermal shutdown temperature Current trip detection level

TJ(TRIP) = f(VS) ICL(0) = f(VS, TJ)

200 120
-40°C
25°C
190 100 150°C

180 80
TJ(TRIP) [°C]

ICL(0) [A]
170 60

160 40

150 20

140 0
0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70

VS [V] VS [V]
Figure 29 Typical performance characteristics (continued)

Datasheet 35 Rev. 1.10

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Datasheet
7 Application information

7 Application information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device. These
are very simplified examples of an application circuit. The function must be verified in the real application.

VBAT R/ L cable

Cvs
Logic supply VS
T1
VDD
RIN Control
GPIO IN
ROL
Microcontroller

GPIO RDEN DEN Protection Optional

R/ L cable
OUT
A/D IN RIS_PROT IS
Diagnosis

CSENSE RIS COUT RLOAD

VSS GND

Figure 30 Application diagram: device controlled by a microcontroller

Table 7 Bill of material

Reference Value Purpose
RIN 4.7 kΩ Protection of the microcontroller
RDEN 4.7 kΩ Protection of the microcontroller
RIS 2.0 kΩ Sense resistor
RIS_PROT 4.7 kΩ Protection of the microcontroller
CSENSE 10 nF Sense signal filtering
CVS 100 nF Improved EMC behavior (in layout, please place close to the pins)
COUT 47 nF Protection against EMC
ROL Application specific Open load detection in off state: to have VOUT higher
than VOUT(OL_OFF). The value depends on the leakage outside the ECU
between OUT and GND

Datasheet 36 Rev. 1.10

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BTH50030-1LUA
Datasheet
7 Application information

VBAT R/ L cable
Module boundaries

VS

Control
IN

DEN Protection
OUT R/ L cable
IS
Diagnosis

Logic supply
Cvs RIS COUT RLOAD
GND

VDD
Microcontroller

R/ L cable

GPIO T
VSS

Figure 31 Application diagram: solid state relay for direct relay replacement

Table 8 Bill of material

Reference Value Purpose
RIS 2.0 kΩ Sense resistor
CVS 100 nF Improved EMC behavior (in layout, please place close to the pins)
COUT 47 nF Protection against EMC
T Bipolar or MOSFET Switch to turn on and off the device

Datasheet 37 Rev. 1.10

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Datasheet
8 Package information

8 Package information

Figure 32 PG-HSOF-8 (8-pin TO-Leadless) package dimensions

Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly
products and to be compliant with government regulations the device is available as a green product. Green products
are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Datasheet 38 Rev. 1.10

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BTH50030-1LUA
Datasheet
9 Revision history

9 Revision history
Revision Date Changes
1.00 2023-09-15 Datasheet released
1.01 2024-03-21 Maximum value of the
PRQ-93, IOUT(OFF), changed from 100
µA to 50 µA
1.10 2024-12-03 • Note and condition of
the PRQ-34 changed to
"1) Short term overvoltage
according to ISO 21780:2020(E),
test-03 RL = RL(NOM), RIS = 2 kΩ"
• Note and condition of the
PRQ-55 changed to "1) 2)
Parameter deviation possible,
long term overvoltage according
to ISO 21780:2020(E), test-06"

Datasheet 39 Rev. 1.10

2024-12-03
Trademarks
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Edition 2024-12-03 Important notice Warnings

Published by The information given in this document shall in no Due to technical requirements products may contain
event be regarded as a guarantee of conditions or dangerous substances. For information on the types
Infineon Technologies AG
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