AON7932

30V Dual Asymmetric N-Channel MOSFET

General Description Product Summary

The AON7932 is designed to provide a high efficiency Q1 Q2

synchronous buck power stage with optimal layout and VDS 30V 30V
board space utilization. It includes two specialized ID (at VGS=10V) 26A 35A
MOSFETs in a dual Power DFN3x3A package. The Q1
RDS(ON) (at VGS=10V) <20mΩ <12mΩ
"High Side" MOSFET is designed to minimize switching
losses. The Q2 "Low Side" MOSFET use advance trench RDS(ON) (at VGS = 4.5V) <30mΩ <15mΩ
technology with a monolithically integrated Schotty to
provide excellent RDS(ON) and low gate charge. The
AON7932 is well suited for use in compact DC/DC 100% UIS Tested
converter applications. 100% Rg Tested

Power DFN3x3A Top View Bottom View

Top View Bottom View

G2
S2
S2
S2
(S1/D2)
D1

G1
D1
D1
D1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 ±12 V
Continuous Drain TC=25°C 26 35
ID
Current TC=100°C 16 22 A
Pulsed Drain Current C IDM 70 110
Continuous Drain TA=25°C 6.6 8.1
IDSM A
Current TA=70°C 5.3 6.5
Avalanche Current C IAS, IAR 18 17 A
Avalanche Energy L=0.1mH C EAS, EAR 16 14 mJ
TC=25°C 23 25
PD W
Power Dissipation B TC=100°C 9 10
TA=25°C 1.4 1.4
A
PDSM W
Power Dissipation TA=70°C 0.9 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Max Q1 Typ Q2 Max Q2 Units
A
Maximum Junction-to-Ambient t ≤ 10s 40 50 40 50 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 70 90 70 90 °C/W
Maximum Junction-to-Case Steady-State RθJC 4.5 5.4 4.2 5 °C/W

Rev 2: Oct 2011 www.aosmd.com Page 1 of 11

 AON7932

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.9 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 70 A
VGS=10V, ID=6.6A 16 20
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 24 29
VGS=4.5V, ID=5.3A 23 30 mΩ
gFS Forward Transconductance VDS=5V, ID=6.6A 33 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 300 380 460 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 110 160 210 pF
Crss Reverse Transfer Capacitance 7 13 22 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.5 2.3 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 5.4 6.5 nC
Qg(4.5V) Total Gate Charge 2.3 nC
VGS=10V, VDS=15V, ID=6.6A
Qgs Gate Source Charge 1.3 nC
Qgd Gate Drain Charge 1 nC
tD(on) Turn-On DelayTime 10 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.3Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=6.6A, dI/dt=500A/µs 6.8 8.5 10.2 ns
Qrr Body Diode Reverse Recovery Charge IF=6.6A, dI/dt=500A/µs 12.8 16 19.2 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 2: Oct 2011 www.aosmd.com Page 2 of 11

 AON7932

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 25
10V VDS=5V

20
60
7V

4.5V 15
ID (A)

ID(A)
40
4V 125°C
10
3.5V
20
5
VGS=2.5V 25°C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 2
Normalized On-Resistance VGS=10V
1.8 ID=6.6A
VGS=4.5V
25
1.6
Ω)
RDS(ON) (mΩ

17
20 1.4 VGS=4.5V
5
ID=5.3A
2
1.2
15 10
VGS=10V
1

10
0.8
0 3 6 9 12 15
0 25 50 75 100 125 150 175 200
ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate 18Temperature
Figure 4: On-Resistance vs. Junction
Voltage (Note E) (Note E)

40 1.0E+02
ID=6.6A
35 1.0E+01
40
1.0E+00
30 125°C
Ω)
RDS(ON) (mΩ

1.0E-01
25
IS (A)

1.0E-02 25°C
125°C
20 1.0E-03

15 1.0E-04
25°C
1.0E-05
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 2: Oct 2011 www.aosmd.com Page 3 of 11

 AON7932

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 600
VDS=15V
ID=6.6A
500
8
Ciss

Capacitance (pF)
400
VGS (Volts)

6
300
4
200 Coss

2
100
Crss

0 0
0 1 2 3 4 5 6 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 160 TJ(Max)=150°C

10µs TC=25°C
RDS(ON)
limited
Power (W)

100us
ID (Amps)

10.0 120
1ms
1.0 DC 80

TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=5.4°C/W
1

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 2: Oct 2011 www.aosmd.com Page 4 of 11

 AON7932

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100.0 30
TA=25°C
IAR (A) Peak Avalanche Current

25

Power Dissipation (W)

TA=100°C
20

10.0 15

TA=150°C
10

TA=125°C
5

1.0 0

0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150

Time in avalanche, tA (s) °C)
TCASE (°
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

30 10000

25 TA=25°C
1000
Current rating ID(A)

20
Power (W)

17
15 100 5
2
10 10
10
5

0 1
0.00001 0.001 0.1 10
0 25 50 75 100 125 150
0 1000
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W 40

0.1

PD
0.01
Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 2: Oct 2011 www.aosmd.com Page 5 of 11

 AON7932

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 500
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 1.6 2.1 V
ID(ON) On state drain current VGS=10V, VDS=5V 110 A
VGS=10V, ID=8.1A 10 12
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 15 18
VGS=4.5V, ID=6.5A 12 15 mΩ
gFS Forward Transconductance VDS=5V, ID=8.1A 50 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.45 0.7 V
IS Maximum Body-Diode Continuous Current 30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 810 1020 1230 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 77 111 150 pF
Crss Reverse Transfer Capacitance 45 75 130 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 1 1.5 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 19 23 nC
Qg(4.5V) Total Gate Charge 9 nC
VGS=10V, VDS=15V, ID=8.1A
Qgs Gate Source Charge 4 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 11 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω, 5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 29 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=8.1A, dI/dt=500A/µs 4 5.4 7 ns
Qrr Body Diode Reverse Recovery Charge IF=8.1A, dI/dt=500A/µs 4 5.3 7 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 2: Oct 2011 www.aosmd.com Page 6 of 11

 AON7932

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
VDS=5V
10V
80 3.5V 80

60 3V 60
125°C
ID (A)

ID(A)
40 40 25°C

Vgs=2.5V
20 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 2
VGS=10V
Normalized On-Resistance
16 1.8 ID=8.1A

VGS=4.5V
1.6
Ω)
RDS(ON) (mΩ

12
17
1.4 VGS=4.5V 5
8 ID=6.5A 2
1.2
VGS=10V
10
4
1

0 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

40 1.0E+02
ID=8.1A 125°C
35
1.0E+01
30 40
25
Ω)

1.0E+00
RDS(ON) (mΩ

125°C
IS (A)

25°C
20
1.0E-01
15

10
1.0E-02
5 25°C

0 1.0E-03
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 2: Oct 2011 www.aosmd.com Page 7 of 11

 AON7932

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=8.1A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400

2 Crss Coss
200

0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200
TJ(Max)=150°C
10µs TC=25°C
100.0 160
100µs
RDS(ON)
limited
ID (Amps)

Power (W)

10.0 1ms 120

DC
1.0 80

TJ(Max)=150°C
0.1 40
TC=25°C

0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=5°C/W 40
1

PD
0.1
Single Pulse Ton
T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 2: Oct 2011 www.aosmd.com Page 8 of 11

 AON7932

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 30
TA=25°C
IAR (A) Peak Avalanche Current

TA=100°C 25

Power Dissipation (W)

20

10 15
TA=150°C
10

TA=125°C
5

1 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150

Time in avalanche, tA (s) °C)

TCASE (°
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

50 10000

TA=25°C
40 1000
Current rating ID(A)

Power (W)

30
17
100 5
2
20
10
10
10

1
0 0.00001 0.001 0.1 10 1000
0 25 50 75 100 125 150 0
°C)
TCASE (° Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)

Rev 2: Oct 2011 www.aosmd.com Page 9 of 11

 AON7932

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01 0.9
20A 10A 5A
0.8
1.0E-02 0.7
0.6
1.0E-03 VDS=30V

VSD (V)
0.5
IR (A)

0.4
1.0E-04
VDS=15V 0.3 IS=1A
0.2
1.0E-05
0.1

1.0E-06 0

0 50 100 150 200 0 50 100 150 200

Temperature (°C) Temperature (°C)
Figure 17: Diode Reverse Leakage Current vs. Figure 18: Diode Forward voltage vs. Junction
Junction Temperature Temperature

16 10 10 4
di/dt=800A/µs
di/dt=800A/µs 3.5
8 8
12 125ºC 125ºC 3

25ºC 6 2.5
6
Qrr (nC)

trr (ns)
Irm (A)

8 trr 25ºC 2

S
4 4 1.5
125ºC
Qrr
4 125ºC 1
2 2
Irm S
25ºC 0.5
25ºC
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 18: Diode Reverse Recovery Charge and Peak Figure 19: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current

8 15 10 4
Is=20A
Is=20A 3.5
125ºC 12
6 8 3
trr
9 25ºC 2.5
Qrr (nC)

trr (ns)
Irm (A)

4 25ºC 6 2
S

Qrr 6 125ºC 1.5

2 125ºC 4 125ºC 1
3 S
0.5
Irm 25ºC 25ºC
0 0 2 0
0 200
400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 20: Diode Reverse Recovery Charge and Peak Figure 21: Diode Reverse Recovery Time and
Current vs. di/dt Softness Factor vs. di/dt

Rev 2: Oct 2011 www.aosmd.com Page 10 of 11

 AON7932

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 2: Oct 2011 www.aosmd.com Page 11 of 11