AON6794

30V N-Channel SRFET

General Description Product Summary

• Trench Power αMOS Technology VDS 30V

• Low RDS(ON) ID (at VGS=10V) 85A
• Low Gate Charge RDS(ON) (at VGS=10V) < 2.8mΩ
• High Current Capability
• RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) < 3.5mΩ

Applications 100% UIS Tested

100% Rg Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial

DFN5X6 D
Top View Bottom View Top View

SRFETTM
S 1 8 D Soft Recovery MOSFET:
Integrated Schottky Diode
S 2 7 D
S 3 6 D
G 4 5 D G
PIN1
PIN1 S

Orderable Part Number Package Type Form Minimum Order Quantity

AON6794 DFN 5x6 Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TC=25°C 85
ID
Current G TC=100°C 60 A
Pulsed Drain Current C IDM 190
Continuous Drain TA=25°C 37
IDSM A
Current TA=70°C 30
Avalanche Current C IAS 42 A
C
Avalanche energy L=0.05mH EAS 44 mJ
VDS Spike 10μs VSPIKE 36 V
TC=25°C 42
PD W
Power Dissipation B TC=100°C 17
TA=25°C 6.2
PDSM W
Power Dissipation A TA=70°C 4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 15 20 °C/W
AD RqJA
Maximum Junction-to-Ambient Steady-State 40 50 °C/W
Maximum Junction-to-Case Steady-State RqJC 2.4 3 °C/W

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 AON6794

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 100
IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.1 1.5 1.9 V
VGS=10V, ID=20A 2.3 2.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 3.4 4.1
VGS=4.5V, ID=20A 2.8 3.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 167 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.5 0.7 V
IS Maximum Body-Diode Continuous Current 30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2150 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 710 pF
Crss Reverse Transfer Capacitance 70 pF
Rg Gate resistance f=1MHz 0.9 1.8 2.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 37.5 nC
Qg(4.5V) Total Gate Charge 17 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 5 nC
Qgd Gate Drain Charge 5 nC
tD(on) Turn-On DelayTime 7 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75W, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 36 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ms 15.5 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 33 nC

A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature T J(MAX)=150°C.
D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsin k, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE
CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY
OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS,
INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
4.5V VDS=5V
80 80
3V

60 60 125°C
10V
ID (A)

ID(A)
40 40 25°C

VGS=2.5V
20 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS (Volts) VGS(Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

5 1.8

Normalized On-Resistance
1.6 VGS=10V
4
ID=20A
RDS(ON) (mW)

VGS=4.5V
1.4
3

1.2
2 VGS=4.5V
ID=20A
VGS=10V
1
1

0.8
0 0 25 50 75 100 125 150 175
0 5 10 15 20 25 30
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage (Note E) Temperature (Note E)

10 1.0E+01
ID=20A
1.0E+00
8 125°C

1.0E-01
RDS(ON) (mW)

6 25°C
IS (A)

125°C
1.0E-02
4
1.0E-03

2
1.0E-04
25°C

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 3000
VDS=15V
ID=20A 2500
8 Ciss

Capacitance (pF)
2000
VGS (Volts)

6
1500
4
1000 Coss

2
500
Crss

0 0
0 10 20 30 40 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=150°C
TC=25°C
100.0 10ms 400
RDS(ON) 10ms
limited
Power (W)

300
ID (Amps)

10.0 100ms
DC 1ms
10ms 200
1.0

0.1 TJ(Max)=150°C 100

TC=25°C

0.0 0
0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
VGS> or equal to 4.5V Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Case (Note F)
Safe Operating Area (Note F)

10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZqJC.RqJC
ZqJC Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RqJC=3°C/W
1

0.1 Single Pulse PD

Ton
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 100

40 80
Power Dissipation (W)

Current rating ID(A)

30 60

20 40

10 20

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10 D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
ZqJA Normalized Transient

In descending order
Thermal Resistance

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

1 RqJA=50°C/W

0.1

PD
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6794

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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