PH3251 Materials Science Question Bank 2
PH3251 Materials Science Question Bank 2
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QUESTION BANK
UNIT – I -CRYSTALLOGRAPHY
PART-A
PART-B
1. Explain the Characteristics of BCC and FCC structures with a neat diagram (16)
2. Explain the Characteristics of Hexagonal Closely Packed Crystal System (HCP) with a
neat diagram. (16)
3. Write a short note on point defects (8)
4. Explain (i) Edge dislocation (ii) Screw dislocation (iii) Grain Boundary (iv) Twin
Boundary (16)
5. Write short note on Plastic deformation of materials.(8)
6. Write a short note on (i) Polymorphism
(ii) Phase changes
7. Explain nucleation and growth and explain about (i) Homogeneous nucleation and
(ii) Heterogeneous nucleation. (16)
PART-B
PART-B
1. Obtain an expression for carrier concentration in an intrinsic semiconductor and also
calculate the intrinsic carrier concentration. (16)
2. Derive an expression for density of electrons in the conduction band of an n – type
semiconductor and explain the variation of Fermi level with temperature and donor
concentration. (16)
3. Derive an expression for density of holes in the valence band of an p – type
semiconductor and explain the variation of Fermi level with temperature and acceptor
concentration. (16)
4. Explain the working principle of (i) Gauss Meter (ii) Electronic Multimeter and
(iii) Electronic Wattmeter (16)
5. Describe the construction and working principle of Ohmic contact diode.(12)
6. Describe the construction and working principle of Schottky diode. Give its
advantages, disadvantages and applications. (16)
PART – B
1. Explain different types of optical materials.(8)
2. Explain optical absorption and emission in semiconductors.(8)
3. Write a short note on charge injection and recombination.(8)
4. Write a short note on optical loss and optical gain.
5. Explain the principle, construction and working of (i) P-N photo diode (ii) Solar cell(16)
PART – A
PART – B