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Mcqs Jfet Mosfet Basics Year One 2024

Mcqs jfet

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128 views5 pages

Mcqs Jfet Mosfet Basics Year One 2024

Mcqs jfet

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6gnzq6k795
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ANALOGUE ELECTRONICS FOR YEAR ON-COLTECH-2024

SOME MCQS ON BASICS OF JFETS AND MOSFETS


1. JFET is a ______ carrier device.
a) Unipolar
b) Bipolar
c) Minority
d) Majority
2. The n-channel JFET, the pinch off voltage is ______________
a) not greater than 0
b) greater than or equal to 0
c) less than or equal to 0
d) not less than 0
3. The built-in barrier potential in a N-channel JFET is ___________
a) less than the internal pinch-off voltage
b) equal to the internal pinch-off voltage
c) greater than the internal pinch-off voltage
d) not related to the internal pinch-off voltage
4. If channel thickness increases, the internal pinch-off voltage ___________
a) Decreases
b) Increases
c) Remains the same
d) Increases logarithmically
5. If the doping concentration of the gate increases, the internal pinch-off voltage
___________
a) Increases logarithmically
b) Increases linearly
c) Increases exponentially
d) Decreases linearly
6. The cut-off frequency of a JFET is that time when the magnitude of the input current
is ___________
a) Greater than the output current
b) Less than the output current
c) Equal to the output current
d) Twice the output current
7. The cut-off frequency of a JFET is ___________
a) linearly related to the transconductance of the JFET
b) inversely proportional to the transconductance of the JFET
c) exponentially related to the transconductance of the JFET
d) logarithmically related to the transconductance of the JFET
8. How is the transconductance at saturation related to the pinch off voltage of the
JFET?
a) Inversely proportional
b) Directly proportional
c) Inverse-squarely related
d) Directly and proportional to square of the pinch-off voltage
9. When an N-channel JFET reaches pinch-off, the increase in the drain to source
voltage results in shifting of the pinch-off position towards the ___________
a) Gate
b) Drain
c) Source
d) Does not shift
10. An N-channel JFET is ___________
a) Always ON
b) Always OFF
c) Enhancement mode JFET
d) Has a p-type substrate
11. A P-channel JFET is___________
a) Always ON
b) Always OFF
c) Depletion mode JFET
d) Has an n-type substrate
12. How is the metallurgical channel thickness between the gate and the substrate
related to the doping concentration of the channel?
a) Inversely proportional to the square root of the doping concentration
b) Logarithmically related to the square root of the doping concentration
c) Directly proportional to the square root of the doping concentration
d) Exponentially related to the square root of the doping concentration
13. Which of the following statements are true?
P: JFET is biased to operate it in active region
Q: MOSFET is biased to operate it in saturation region
a) Both P and Q are correct
b) P is correct and Q is incorrect
c) P is incorrect and Q is correct
d) Both P and Q are incorrect
14. In the given situation for n-channel JFET, we get drain-to-source current is 5mA.
What is the current when VGS = – 6V?
a) 5 mA
b) 0.5A
c) 0.125 A
d) 0.5A
15. Consider the following circuit. Given that VDD = 15V, VP = 2V, and IDS = 3mA, to bias the
circuit properly, select the proper statement.

a) RD < 6kΩ
b) RD > 6kΩ
c) RD > 4kΩ
d) RD < 4kΩ
16. Consider the circuit shown. VDS=3 V. If IDS=2mA, find VDD to bias circuit.

a) -30V
b) 30V
c) 33V
d) Any value of voltage less than 12 V
17. To bias a e-MOSFET ___________
a) we can use either gate bias or a voltage divider bias circuit
b) we can use either gate bias or a self bias circuit
c) we can use either self bias or a voltage divider bias circuit
d) we can use any type of bias circuit
18. Consider the following circuit. Process transconductance parameter = 0.50 mA/V2,
W/L=1, Threshold voltage = 3V, VDD = 20V. Find the operating point of circuit.

a) 20V, 25mA
b) 13V, 22mA
c) 12.72V, 23.61mA
d) 20V, 23.61mA
19. Given VDD = 25V, VP = -3V. When VGS = -3V, IDS = 10mA. Find the operating point of the
circuit.

a) -3.83V, 0.766mA
b) -2.345V, 0.469mA
c) 3.83V, 0.469mA
d) 2.3V, 0.7mA
20.

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