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This document contains a quiz about electronics and semiconductor devices like JFETs and MOSFETs. It has 15 multiple choice questions testing knowledge of concepts like pinch off voltage, drain current, and the differences between depletion and enhancement mode MOSFETs.

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29 views4 pages

Sheet

This document contains a quiz about electronics and semiconductor devices like JFETs and MOSFETs. It has 15 multiple choice questions testing knowledge of concepts like pinch off voltage, drain current, and the differences between depletion and enhancement mode MOSFETs.

Uploaded by

anas.hilton2004
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Misr University for Science and Technology

Faculty of Engineering
Electronics and communications Department
Electronics II (ECE 202) Sheet (3)

Select the correct Answer:


Q1- The JFET is
A. a unipolar device
B. a voltage-controlled device
C. a current-controlled device
D. answer a and c
E. answer a and b
Q2-The channel of a JFET is between the
A. drain and source
B. gate and drain
C. input and output
D. gate and source
Q3-A JFET always operates with
A. the gate connected to the source
B. the gate-to-source pn junction forward-biased
C. the gate-to-source pn junction reverse-biased
D. the drain connected to ground
Q4-For VGS = 0 V, the drain current becomes constant when VDS exceeds
A. 0 V
B. Vp
C. VDD
D. cutoff
Q5-The constant-current area of a FET lies between
A. pinch-off and breakdown
B. 0 and IDSS
C. cutoff and saturation
D. cutoff and pinch-off
Q6- IDSS is
A. the drain current at cutoff
B. the maximum possible drain current
C. the drain current with the source shorted
D. the midpoint drain current
Q7- Drain current in the constant-current area increases when
A. the drain-to-source voltage decreases
B. the gate-to-source bias voltage increases
C. the gate-to-source bias voltage decrease
D. the drain-to-source voltage increases
Q8- In a certain FET circuit, VGS = 0 V, VDD = 15 V, IDSS = 15 mA ,and RD = 470 Ω. If RD is
decreased to 330 Ω, IDSS is
A. 1 mA
B. 10.5 mA
C. 19.5 mA
D. 15 mA
Q9- At cutoff, the JFET channel is
A. completely closed by the depletion region
B. at its wide points
C. extremely narrow
D. reverse-biased
Q10- A certain JFET data sheet gives VGS (off) = - 4 V. The pinch off voltage, Vp,
A. cannot be determined
B. is –4 V
C. depends on VGS
D. is + 4 V
Q11- For a certain JFET, IGSS = 10 nA at VGS = 10 V. The input resistance is
A. 1 MΩ
B. 1000 MΩ
C. 100 MΩ
D. 1000 mΩ
Q12- For a certain p-channel JFET, VGS (off) = 8 V. The value of VGS for an approximately midpoint
bias is
A. 2.34 V
B. 0 V
C. 4 V
D. 1.25 V
Q13- A MOSFET differs from a JFET mainly because
A. of the power rating
B. the JFET has a pn junction
C. MOSFETs do not have a physical channel
D. the MOSFET has two gates
Q14- A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20 mA and
VGS (off) = - 5 V. The value of the drain current
A. is 0 A
B. cannot be determined
C. is 20 mA
Q15- An n-channel D-MOSFET with positive VGS is operating in
A. the depletion mode
B. cutoff
C. the enhancement mode
D. saturation
Q16- A certain p-channel E-MOSFET has a VGS (th) = - 2 V. If VGS = 0 V, the drain current is
A. 0 A
B. maximum
C. IDSS
D. ID (on)

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