STW70N60M2

N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2

Power MOSFET in a TO-247 package
Datasheet − production data

Features
Order codes VDS @ TJmax RDS(on) max ID

STW70N60M2 650 V 0.040 Ω 68 A

3
• Extremely low gate charge
2
1 • Excellent output capacitance (Coss) profile
TO-247 • 100% avalanche tested
• Zener-protected

Applications
Figure 1. Internal schematic diagram • Switching applications
D(2)
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
G(1)
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.

S(3)
AM01476v1

Table 1. Device summary

Order codes Marking Package Packaging

STW70N60M2 70N60M2 TO-247 Tube

September 2014 DocID024327 Rev 4 1/13

This is information on a product in full production. www.st.com 13
Contents STW70N60M2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 DocID024327 Rev 4

STW70N60M2 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VGS Gate-source voltage ± 25 V

ID Drain current (continuous) at TC = 25 °C 68 A
ID Drain current (continuous) at TC = 100 °C 43 A
IDM (1) Drain current (pulsed) 272 A
PTOT Total dissipation at TC = 25 °C 450 W
dv/dt (2)
Peak diode recovery voltage slope 15 V/ns
dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns
Tstg Storage temperature
- 55 to 150 °C
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 68 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V.
3. VDS ≤ 480 V

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.28 °C/W

Rthj-amb Thermal resistance junction-ambient max 50 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not

IAR 10 A
repetitive (pulse width limited by Tjmax )
Single pulse avalanche energy (starting
EAS 1500 mJ
Tj=25°C, ID= 10 A; VDD=50)

DocID024327 Rev 4 3/13

Electrical characteristics STW70N60M2

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 600 V
breakdown voltage

Zero gate voltage VDS = 600 V 1 µA

IDSS
drain current (VGS = 0) VDS = 600 V, TC=125 °C 100 µA
Gate-body leakage
IGSS VGS = ± 25 V ±10 µA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source
RDS(on) VGS = 10 V, ID = 34 A 0.030 0.040 Ω
on-resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 5200 - pF

Coss Output capacitance VDS = 100 V, f = 1 MHz, - 250 - pF
VGS = 0
Reverse transfer
Crss - 5 - pF
capacitance
Equivalent output
Coss eq.(1) VDS = 0 to 480 V, VGS = 0 - 395 - pF
capacitance
Intrinsic gate
RG f = 1 MHz, ID = 0 - 3.3 - Ω
resistance
Qg Total gate charge VDD = 480 V, ID = 68 A, - 118 - nC
Qgs Gate-source charge VGS = 10 V - 25 - nC
Qgd Gate-drain charge (see Figure 15) - 47 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 32 - ns

VDD = 300 V, ID = 34 A,
tr Rise time RG = 4.7 Ω, VGS = 10 V - 17 - ns
td(off) Turn-off-delay time (see Figure 14 and - 155 - ns
Figure 19)
tf Fall time - 9 - ns

4/13 DocID024327 Rev 4

STW70N60M2 Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 68 A

ISDM (1)
Source-drain current (pulsed) - 272 A
VSD (2)
Forward on voltage ISD = 68 A, VGS = 0 - 0.98 1.6 V
trr Reverse recovery time - 520 ns
ISD = 68 A, di/dt = 100 A/µs
Qrr Reverse recovery charge - 12 µC
VDD = 60 V (see Figure 18)
IRRM Reverse recovery current - 45 A
trr Reverse recovery time ISD = 68 A, di/dt = 100 A/µs - 680 ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 18 µC
IRRM Reverse recovery current (see Figure 18) - 50 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

DocID024327 Rev 4 5/13

Electrical characteristics STW70N60M2

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM17966v1 AM09125v1
ID
K
(A)
δ=0.5

100 0.2
is
10µs
ea )
ar S(
on 0.1
is D
th R 100µs 0.05
n
in ax -1
io m
10 ra
t by 10
pe ed 1ms 0.02
O imit
L 0.01
Zth=k Rthj-c
10ms d=tp/t
Single pulse
1
Tj=150°C
Tc=25°C tp

Single pulse t
-2
0.1 10 -4 -2 -1
-3
0.1 1 10 100 VDS(V) 10 10 10 10 tp (s)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM17967v1 AM17968v1
ID
ID (A) (A)
VGS=7, 8, 9, 10V VDS=17V
150 6V 150

120 120

90 90
5V

60 60

30 30
4V
0 3V 0
0 4 8 12 16 VDS(V) 0 2 4 6 8 VGS(V)

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

AM17969v1 AM17970v1
VGS RDS(on)
VDS
(V) (V) (Ω)
VDD=480V VGS=10V
10 VDS ID=68A 500 0.0315

8 400 0.031

6 300 0.0305

4 200 0.03

2 100 0.0295

0 0 0.029
0 20 40 60 80 100 120 Qg(nC) 0 10 20 30 40 50 60 ID(A)

6/13 DocID024327 Rev 4

STW70N60M2 Electrical characteristics

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

AM17971v1 AM17972v1
C Eoss
(pF) (µJ)

10000
Ciss 30

1000

20
Coss
100

10
10
Crss

1 0
0.1 1 10 100 VDS(V) 0 100 200 300 400 500 VDS(V)

Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs
temperature temperature
VGS(th) AM17973v1 AM17974v1
RDS(on)
(norm) (norm)
ID=250µA ID=34A
1.1 2.2

1 1.8

0.9 1.4

0.8 1

0.7 0.6

0.6 0.2
-50 0 50 100 TJ(°C) -50 0 50 100 TJ(°C)

Figure 12. Normalized VDS vs temperature Figure 13. Source-drain diode forward
characteristics
AM15975v1 AM17976v1
VDS VSD (V)
(norm)
ID=1mA TJ=-50°C
1.09 1

1.05 0.9 TJ=25°C

1.01 0.8

0.97 0.7 TJ=150°C

0.93 0.6

0.89 0.5
-50 0 50 100 TJ(°C) 0 10 20 30 40 50 60 ISD(A)

DocID024327 Rev 4 7/13

Test circuits STW70N60M2

3 Test circuits

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
9 %5 '66 ton toff
tr tdoff tf
9' tdon

90% 90%
,'0
10%
,' 10% VDS
0

9'' 9'' 90%

VGS

$0Y 0 10% AM01473v1

8/13 DocID024327 Rev 4

STW70N60M2 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

DocID024327 Rev 4 9/13

Package mechanical data STW70N60M2

Figure 20. TO-247 drawing

0075325_G

10/13 DocID024327 Rev 4

STW70N60M2 Package mechanical data

Table 9. TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70

DocID024327 Rev 4 11/13

Revision history STW70N60M2

5 Revision history

Table 10. Document revision history

Date Revision Changes

28-Feb-2013 1 First release.

– Minor text changes
13-Mar-2013 2
– Modified: test condition in Table 7
– Modified: title
– Modified: Table 4, RDS(on) typical value in Table 5, the entire typical
values in Table 6, 7 and 8
12-Dec-2013 3
– Updated: Section 3: Test circuits
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
– Updated values inTable 4
01-Sep-2014 4 – Updated description and features in cover page
– Minor text changes

12/13 DocID024327 Rev 4

STW70N60M2

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DocID024327 Rev 4 13/13