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tdf8530 Sds

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40 views41 pages

tdf8530 Sds

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Oleg OlegFV
Copyright
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TDF8530

I2C-bus controlled quad channel 45 W/2  class-D power


amplifier with full diagnostics
Rev. 3 — 20 October 2011 Product short data sheet

1. General description
The TDF8530 is a quad Bridge-Tied Load (BTL) car audio amplifier comprising an
NDMOST-NDMOST output stage based on SOI BCDMOS technology. Low power
dissipation enables the TDF8530 high-efficiency, class-D amplifier to be used with a
smaller heat sink than those normally used with standard class-AB amplifiers.

The TDF8530 can operate in either non-I2C-bus mode or I2C-bus mode. When in I2C-bus
mode, DC load detection results and fault conditions can be easily read back from the
device. Up to 12 I2C-bus addresses can be selected depending on the value of the
external resistors connected to pins ADS and MOD.

When pin ADS is short circuited to ground, the TDF8530 operates in non-I2C-bus mode.
Switching between Operating mode and Mute mode in non-I2C-bus mode is only possible
using pins EN and SEL_MUTE.

2. Features and benefits


 High-efficiency
 Low quiescent current
 Operating voltage from 6 V to 24 V
 4  or 2  capable BTL channels
 Fast-mode I2C-bus
 I2C-bus mode with 12 I2C-bus addresses or non-I2C-bus mode operation
 Clip detect selectable at 0.2 % or 10 % THD
 Independent short-circuit protection for each channel
 Advanced short-circuit protection for load, GND and supply
 Load dump protection to 50 V
 Thermal foldback and thermal protection
 DC offset protection
 Selectable AD or BD modulation
 Advanced clocking:
 Switchable oscillator clock source: internal for Master mode or external for Slave
mode
 Spread spectrum mode
 Phase staggering
 Frequency hopping
 No ‘pop noise’ caused by DC output offset voltage
 I2C-bus mode:
NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

 Load diagnostics
Speaker load, open load and shorted load
Amplifier output to ground and to supply shorts
Tweeter detection
 Thermal pre-warning diagnostic level setting
 Identification of activated protections or warnings
 Selectable diagnostic information available using DIAG pin
 Qualified in accordance with AEC-Q100

3. Applications
 Car audio
 Audio entertainment systems

4. Quick reference data


Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
General; VP = 14.4 V
VP supply voltage 6 14.4 24 V
IP supply current off state; VEN < 0.8 V - 2 10 A
Iq quiescent current no load, snubbers and output filter - 185 200 mA
connected
Quad BTL channel; VP = 14.4 V
Po output power RL = 4 ; THD = 10 % 24 26 - W
RL = 2 ; THD = 10 % 39 45 - W
Quad BTL channel; VP = 24 V
Po output power RL = 4 ; THD = 10 % - 70 - W
RL = 2 ; THD = 10 % - 100 - W

5. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
TDF8530TH HSOP44 plastic, heatsink small outline package; 44 leads; low stand-off height SOT1131-1

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 2 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

6. Block diagram

VDDA VP1 VP2

30 6 17
TDF8530
29
AGND
1
31 STABI1 VSTAB1
SVRR
28
ACGND 5, 8, BOOT1N
15, 18 BOOT2N
CHANNEL 1 OF 4 BOOT3N
PVDD
BOOT4N
DRIVER
HIGH 4, 9, OUT1N
PWM 14, 19 OUT2N
CONTROL OUT3N
26 DRIVER OUT4N
IN1P
LOW
25 2, 11, BOOT1P
IN2P PGND 12, 21 BOOT2P
24 PVDD BOOT3P
IN3P
BOOT4P
23 DRIVER
IN4P 3, 10, OUT1P
HIGH
PWM 13, 20 OUT2P
CONTROL OUT3P
DRIVER OUT4P
LOW
PGND

27
INN
41
OSCSET
42
OSCIO 22
40 OSCILLATOR STABI2 VSTAB2
SSM
36
MOD

43
VDDD 5 V STABI

33
EN
32
SEL_MUTE MODE DIAGNOSTICS PROTECTION
38 SELECT
SCL
39 + OVP, OCP, OTP
SDA I2C-BUS UVP, TFP, WP, DCP
37
ADS

44 34 35 7 16

GNDD/HW DIAG DCP PGND1 PGND2 aaa-000198

Fig 1. Block diagram

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 3 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

7. Pinning information

7.1 Pinning

GNDD/HW 44 1 VSTAB1
VDDD 43 2 BOOT1P
OSCIO 42 3 OUT1P
OSCET 41 4 OUT1N
SSM 40 5 BOOT1N
SDA 39 6 VP1
SCL 38 7 PGND1
ADS 37 8 BOOT2N
MOD 36 9 OUT2N
DCP 35 10 OUT2P
DIAG 34 11 BOOT2P
TDF8530TH
EN 33 12 BOOT3P
SEL_MUTE 32 13 OUT3P
SVRR 31 14 OUT3N
VDDA 30 15 BOOT3N
AGND 29 16 PGND2
ACGND 28 17 VP2
INN 27 18 BOOT4N
IN1P 26 19 OUT4N
IN2P 25 20 OUT4P
IN3P 24 21 BOOT4P
IN4P 23 22 VSTAB2

aaa-000199

Fig 2. Heatsink up (top view) pin configuration TDF8530TH

7.2 Pin description


Table 3. Pin description
Symbol Pin Type[1] Description
VSTAB1 1 decoupling internal stabilizer 1 for DMOST drivers
BOOT1P 2 bootstrap capacitor for channel 1 positive
OUT1P 3 O channel 1 positive PWM output
OUT1N 4 O channel 1 negative PWM output
BOOT1N 5 bootstrap capacitor for channel 1 negative
VP1 6 P channel 1 power supply voltage
PGND1 7 G channel 1 power ground
BOOT2N 8 bootstrap capacitor for channel 2 negative
OUT2N 9 O channel 2 negative PWM output
OUT2P 10 O channel 2 positive PWM output
BOOT2P 11 bootstrap capacitor for channel 2 positive
BOOT3P 12 bootstrap capacitor for channel 3 positive

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 4 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Table 3. Pin description …continued


Symbol Pin Type[1] Description
OUT3P 13 O channel 3 positive PWM output
OUT3N 14 O channel 3 negative PWM output
BOOT3N 15 bootstrap capacitor for channel 3 negative
PGND2 16 G channel 2 power ground
VP2 17 P channel 2 power supply voltage
BOOT4N 18 bootstrap capacitor for channel 4 negative
OUT4N 19 O channel 4 negative PWM output
OUT4P 20 O channel 4 positive PWM output
BOOT4P 21 bootstrap capacitor for channel 4 positive
VSTAB2 22 decoupling internal stabilizer 2 for DMOST drivers
IN4P 23 I channel 4 positive audio input
IN3P 24 I channel 3 positive audio input
IN2P 25 I channel 2 positive audio input
IN1P 26 I channel 1 positive audio input
INN 27 I common negative audio input
ACGND 28 I decoupling for input reference voltage
AGND 29 G analog supply ground
VDDA 30 P analog supply voltage
SVRR 31 I decoupling for internal half supply reference voltage
SEL_MUTE 32 I select mute or unmute
EN 33 I enable input:
non-I2C-bus mode: switch between off and Mute mode
I2C-bus mode: off and Standby mode
DIAG 34 O diagnostic output; open-drain
DCP 35 I DC protection input for the filtered output voltages
MOD 36 I modulation mode and phase shift select
ADS 37 I non-I2C-bus mode: connected to ground
I2C-bus mode: selection and address selection pin
SCL 38 I I2C-bus clock input
SDA 39 I/O I2C-bus data input and output
SSM 40 master setting: Spread spectrum mode frequency
slave setting: phase lock operation
OSCSET 41 master/slave oscillator setting
master only setting: set internal oscillator frequency
OSCIO 42 I/O external oscillator slave setting: input
internal oscillator master setting: output
VDDD 43 decoupling of the internal 5 V logic supply
GNDD/HW 44 G ground digital supply voltage and handle wafer connection

[1] I = input, O = output, I/O = input/output, G = ground and P = power supply.


[2] In this data sheet supply voltage VP describes VP1, VP2 and VDDA.

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 5 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

8. Functional description

8.1 Master and slave mode selection


In a master and slave configuration, multiple TDF8530 devices are daisy-chained together
in one audio application with a single device providing the clock frequency signal for all
other devices. In this situation, it is recommended that the oscillators of all devices are
synchronized for optimum EMI behavior as follows:

All OSCIO pins are connected together and one TDF8530 in the application is configured
as the clock-master. All other TDF8530 devices are configured as clock-slaves.

• The clock-master pin OSCIO is configured as the oscillator output. When a resistor
(Rosc) is connected between pins OSCSET and AGND, the TDF8530 is in Master
mode.
• The clock-slave pins OSCIO are configured as the oscillator inputs. When pin
OSCSET is directly connected to pin AGND, the TDF8530 is in Slave mode.

See Table 4 for all oscillator modes. IB3[D2] = 0 in non-I2C-bus mode.

Table 4. Oscillator modes


OSCSET pin OSCIO pin SSM pin IB3[D2] Oscillator modes
Rosc > 22 k output CSSM to pin AGND 0 master, spread spectrum[1]
1 master, spread spectrum[2]
shorted to pin AGND 0 master, no spread spectrum[1]
1 master, no spread spectrum[2]
Rosc = 0  input CPLL + RPLL to pin AGND 0 slave, PLL enabled[1]
1 slave, PLL enabled[2]
shorted to pin AGND 0 slave, PLL disabled[1]
no 1⁄2  phase staggering
1 slave, PLL disabled[2]

[1] fOSCIO = fosc.


[2] fOSCIO = 2  fosc.

8.2 Operation mode selection


Pin MOD is used to select specific operating modes. The resistor (RMOD) connected
between pins MOD and AGND together with the non-I2C-bus/I2C-bus mode determine the
operating mode (see Table 5). This in turn is determined by the resistor value connected
between pins ADS and AGND.

In non-I2C-bus mode, pin MOD is used to select:

• AD or BD modulation (see Section 8.2.1).


• 2⁄8  phase shift when oscillator is used in Slave mode (see Section 8.2.2).
In I2C-bus mode, pin MOD can only select the I2C-bus address range. The modulation
mode and phase shift are programmed using I2C-bus commands.

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 6 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Table 5. Operation mode selection with the MOD pin


RMOD (k) Non-I2C-bus mode[1]
0 (short to AGND) AD modulation: no phase shift in Slave mode
6.8 BD modulation: no phase shift in Slave mode
33 AD modulation: 2⁄8  phase shift in Slave mode
100 BD modulation: 2⁄8  phase shift in Slave mode

[1] RADS = 0 ; pin ADS is short circuited to pin AGND.

8.2.1 Modulation mode


In non-I2C-bus mode, pin MOD is used to select either AD or BD modulation mode (see
Table 5). In I2C-bus mode, the modulation mode is selected using I2C-bus command
IB3[D0].

• AD modulation mode: the bridge halves switch in opposite phase.


• BD modulation mode: the bridge halves switch in phase.
Figure 4 and Figure 5 show simplified representations of AD and BD modulation.

+VP +VP

INxP OUTP OUTN INxN

AD

BD
001aai778

Fig 3. AD/BD modulation switching circuit

INxP

OUTxP

001aai779

a. Bridge half 1.

INxN

OUTxN

001aai780

b. Bridge half 2 switched in the opposite phase to bridge half 1.


Fig 4. AD modulation

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 7 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

INxP

OUTxP

OUTxP - OUTxN

001aai781

a. Phase switching cycle.

INxN

OUTxN

001aai782

b. Inverted signal to the modulator.


Fig 5. BD modulation

8.2.2 Phase staggering (Slave mode)


In Slave mode with phase lock operation enabled, a phase shift with respect to the
incoming clock signal can be selected to distribute the switching moments over time in
multi-amplifier applications. In non-I2C-bus mode, 2⁄8  phase shift can be programmed
using pin MOD. In I2C-bus mode, three different phase shifts (1⁄8 , 2⁄8 , 3⁄8 ) can be
selected using the I2C-bus bits (IB4[D2:D3]). See Table 5 for selection of the phase shift in
non-I2C-bus mode with pin MOD.

By default there is a 1⁄2  phase staggering between channels 1 and 2 and channels 3 and
4 of the TDF8530 independent of Master or Slave mode. This 1⁄2  phase staggering can
be disabled using the I2C-bus bit IB4[D4] resulting in all channels switching at the same
time.

Figure 6 shows an example of the use of 2⁄8  phase shift with BD modulation.

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 8 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

OUT1P phase

0
OUT1N

OUT2P


OUT2N
master 1
2
OUT3P

OUT3N

OUT4P
3 
2
OUT4N

OUT1P
2 
8
OUT1N

OUT2P
10 
8
OUT2N
slave
OUT3P
6 
8
OUT3N

OUT4P
14 
8
OUT4N

aaa-000445

Fig 6. Master and slave operation with 2⁄8  phase shift

8.3 Protection
The TDF8530 includes a range of built-in protection functions. All protections are
asynchronous and do not need an (external) clock signal at pin OSCIO to be operational.
How the TDF8530 manages the various possible fault conditions for each protection is
described in the following sections:

Table 6. Overview of protection types


Protection type Reference
Thermal foldback Section 8.3.1
Overtemperature Section 8.3.2
Overcurrent Section 8.3.3
Window Section 8.3.4

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 9 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Table 6. Overview of protection types …continued


Protection type Reference
DC Offset Section 8.3.5
Undervoltage Section 8.3.6
Overvoltage Section 8.3.6

8.3.1 Thermal foldback


The TDF8530 has a built-in Thermal Foldback Protection (TFP) which is tripped when the
average junction temperature exceeds the threshold level. TFP decreases amplifier gain
such that the combination of power dissipation and Rth(j-a) create a junction temperature
around the threshold level. The device will not completely switch off but remains
operational at the lower output power levels. If the average junction temperature
continues to increase, a second built-in temperature protection threshold level shuts down
the amplifier completely.

8.3.2 Overtemperature protection


If the average junction temperature (Tj) > 160 C, OverTemperature Protection (OTP) is
tripped and the power stages shut down immediately.

8.3.3 Overcurrent protection


OverCurrent Protection (OCP) is tripped when the output current exceeds the threshold.
OCP regulates the output voltage such that the maximum output current is limited. The
amplifier outputs keep switching and the amplifier is NOT shutdown completely. This is
called current limiting.

OCP also detects when the loudspeaker terminals are short circuited or one of the
amplifier’s demodulated outputs is short circuited to one of the supply lines. In either case,
the shorted channel(s) are switched off.

The amplifier can distinguish between loudspeaker impedance drops and a low-ohmic
short across the load or one of the supply lines. This impedance threshold depends on the
supply voltage used. When a short is made across the load causing the impedance to
drop below the threshold level, the shorted channel(s) are switched off. They try to restart
every 50 ms. If the short circuit condition is still present after 50 ms, the cycle repeats. The
average power dissipation will be low because of this reduced duty cycle.

When a channel is switched off due to a short circuit on one of the supply lines, Window
Protection (WP) is activated. WP ensures that the amplifier does not start up after 50 ms
until the supply line short circuit is removed.

8.3.4 Window protection


Window Protection (WP) checks the PWM output voltage before switching from Standby
mode to Mute mode (with both outputs switching) and is activated as follows:

• During the start-up sequence:


– When the TDF8530 is switched from standby to mute (td(stb-mute)). When a short
circuit on one of the output terminals (to VP or GND) is detected, the start-up
procedure for that channel is interrupted and the TDF8530 waits for open circuit
outputs. No large currents flow in the event of a short circuit to the supply lines
because the check is performed before the power stages are enabled.
TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 10 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

• During operation:
– A short circuit to one of the supply lines trips OCP causing the amplifier channel to
shut down. After 50 ms the amplifier channel restarts and WP is activated.
However, the corresponding amplifier channel will not start up until the supply line
short circuit has been removed.

8.3.5 DC offset protection


DC Protection (DCP) is activated (using IB1[D6] or IB2[D6]) when the DC content in the
demodulated output voltage exceeds a set threshold (typically 2 V). DCP is active in both
Mute mode and Operating mode. False triggering of the DCP by low frequencies in the
audio signal is prevented by use of an external capacitor between pin DCP and pin AGND
to generate a cut-off frequency. Connecting pin DCP to pin AGND disables DCP in both
I2C-bus and non-I2C-bus modes. The DCP is always disabled when the supply voltage on
pin VDDA drops below 8 V.

8.3.6 Supply voltage protection


UnderVoltage Protection (UVP) is activated when the supply voltage drops below the UVP
threshold. UVP triggers the UVP circuit causing the system to first mute and then stop
switching. The SVRR and SEL_MUTE pin capacitors will discharge. The information on
the MOD and ADS pins is latched while UVP is active. When the supply voltage rises
above the UVP threshold level, the system restarts. The UVP threshold is set at 6 V
minimum supply by default but can be changed to 8 V minimum supply using bit IB4[D7].

OverVoltage Protection (OVP) is activated when the supply voltage exceeds the OVP
threshold. The OVP (or load dump) circuit is activated and the power stages are shut
down. The SVRR and SEL_MUTE pin capacitors will discharge. When the supply voltage
drops below the OVP threshold level the system restarts.

8.4 Diagnostic output

8.4.1 Diagnostic table


The diagnostic information for I2C-bus mode and non-I2C-bus mode is shown in Table 7.
The instruction bitmap and data bytes are described in Table 9 and Table 11.

Pin DIAG has an open-drain output which must have an external pull-up resistor
connected to an external voltage. Pin DIAG can show both fixed and I2C-bus selectable
information.

Pin DIAG goes LOW when a short-circuit to one of the amplifier outputs occurs. The
microprocessor reads the failure information using the I2C-bus. The I2C-bus bits are set
for a short-circuit. These bits can be reset with the I2C-bus read command.

Even after the short circuit has been removed, the microprocessor knows what was wrong
after reading the I2C-bus. Old information is read when a single I2C-bus read command is
used. To read the current information, two read commands must be sent, one after
another.

When selected, pin DIAG gives the current diagnostic information. Pin DIAG is released
instantly when the failure is removed, independent of the I2C-bus latches.

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 11 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

In non-I2C-bus mode, pins SCL and SDA behave as open drain outputs showing clip
detection diagnostics. Pin SCL shows clip diagnostics from channels 1 and 2. Pin SDA
shows clip diagnostics from channels 3 and 4.

Table 7. Available data on pins DIAG, SCL and SDA


Diagnostic I2C-bus mode Non-I2C-bus mode
Pin DIAG Pin DIAG Pin SCL Pin SDA
Power-on reset yes yes no no
UVP or OVP yes yes no no
Clip detection selectable no channels 1 channels 3
and 2 and 4
Temperature pre-warning selectable yes no no
OCP/WP yes yes no no
DCP selectable yes no no
OTP yes yes no no
Watchdog alarm yes yes no no
AC load detection; see Section 8.4.2.2 selectable no no no

When OCP is triggered, the open-drain DIAG output is activated. The diagnostic output
signal during different short circuit conditions is illustrated in Figure 7.

shorted load short to GND or VP line


AMPLIFIER NO
RESTART RESTART

pull up V

AGND = 0 V

≈50 ms ≈50 ms ≈50 ms 001aai786

Fig 7. Diagnostic output for short circuit conditions

8.4.2 Load identification (I2C-bus mode only)

8.4.2.1 DC load detection


DC load detection is only available in I2C-bus mode and is controlled using bit IB2[D2].
The default setting is logic 0 for bit IB2[D2] which disables DC load detection. DC load
detection is enabled when bit IB2[D2] = 1. Load detection takes place before the SVRR
capacitor is charged and before the class-D amplifier output stage starts switching. The
start-up time from Standby mode to Mute mode is increased by tdet(DCload) (see Figure 8).

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 12 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

VP

comparators OUTN

DOOR-SLAM
SPIKE OFFSET PGND1 RL
PROCESSOR
FILTER GENERATOR VP

OUTP

I2C bits
LOAD
DETECTION PGND2 001aao370

Fig 8. DC load detection circuit

out (V)

t (s)

tdet(DCload)
td(stb-mute) 001aao371

Fig 9. DC load detection procedure

An inaudible current test pulse is created between the amplifier outputs. The external
capacitor connected to pin SEL_MUTE is used for timing. Load diagnostics based on the
voltage difference between pins OUTxP and OUTxN are shown in Figure 8 and Figure 9

SHORTED LOAD SPEAKER LOAD OPEN LOAD

IB3[D3]= 0 (2 Ω speaker load detection) 0.5 Ω 1.6 Ω 20 Ω 80 Ω


IB3[D3]= 1 (4 Ω speaker load detection) 1.5 Ω 3.2 Ω aaa-000446

Fig 10. DC load detection limits

DC Load detection has built in spike filtering and a door-slam processor to remove
disturbances caused by switching relays in the wiring harness, EMI or the closing of a car
door. Reliable load detection is performed in one diagnostic cycle with these filter
techniques.

8.4.2.2 AC load detection (tweeter detection)


AC load detection is only available in I2C-bus mode and is controlled using bit IB1[D2].
The default setting for bit IB1[D2] = 0 disables AC load detection. When AC load detection
is enabled, the average amplifier load current is measured and compared with a reference
level. Pin DIAG is activated when this threshold is reached. Using this information, AC
load detection can be performed using a predetermined input signal frequency and level.

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 13 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

The frequency and signal level should be chosen so that the average load current
exceeds the programmed current threshold when the AC coupled load (tweeter) is
present.

8.4.3 Clip detection


Clip detection gives information for clip levels exceeding a threshold defined as the THD
level of a sinusoidal output signal. The default value of this threshold is set at 0.2 %, but
can be set to 10 % using IB3[D4] = 1.

In non-I2C-bus mode pins SCL and SDA behave as open drain outputs showing
THD = 0.2 % clip detection diagnostics. Pin SCL shows clip diagnostics from channels 1
and 2. Pin SDA shows clip diagnostics from channels 3 and 4.

In I2C-bus mode pin DIAG is used as output of the clip detection circuitry for all channels
Setting bit IBx[D5] to logic 0 in I2C-bus mode defines which channel reports clip
information on the DIAG pin. Clip detection is disabled when the AC load detection is
active.

8.4.4 Start-up and shutdown sequence


To prevent switch on or switch off ‘pop noises’, a capacitor (CSVRR) connected to pin
SVRR is used to smooth start-up and shutdown. During start-up and shutdown, the output
voltage tracks the voltage on pin SVRR. Increasing CSVRR results in a longer start-up and
shutdown time. Enhanced pop noise performance is achieved by muting the amplifier until
the SVRR voltage reaches its final value and the outputs start switching. The value of
capacitor CON connected to pin SEL_MUTE determines the unmute and mute timing. The
voltage on pin SEL_MUTE determines the amplifier gain. Increasing CON increases the
unmute and mute times. In addition, a larger CON value increases the DC load detection
cycle time.

When the amplifier is switched off with an I2C-bus command or by pulling pin EN LOW,
the amplifier is first muted and then capacitor (CSVRR) is discharged.

In Slave mode, the device enters the off state immediately after capacitor (CSVRR) is
discharged. In Master mode, the clock is kept active by an additional delay (td(2)) of
approximately 50 ms to allow slave devices to enter the off state.

A clock signal is needed during the start-up and shutdown sequence. When an external
clock is connected to pin OSCIO (in Slave mode), the clock must remain active during the
shutdown sequence for delay (td(1)) to ensure that the slaved TDF8530 devices are able to
enter the off state. A watchdog is added to protect against clock failure.

TDF8530_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product short data sheet Rev. 3 — 20 October 2011 14 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

VDDA

DIAG

td(1)

EN

ACGND
td(3)

IB1[D0] and
IB2[D0] = 0

DB4[D2]

td(mute-fgain)
td(2)
SEL_MUTE

SVRR

twake
td(stb-mute)

OUTn

tdet(DCload)
aaa-000447

(1) Shutdown hold delay.


(2) Master mode shutdown delay.
(3) Shutdown delay.
Fig 11. Start-up and shutdown timing in I2C-bus mode with DC load detection

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Product short data sheet Rev. 3 — 20 October 2011 15 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

VDDA

DIAG

td(2) td(1)

EN

ACGND
td(mute-fgain)

SEL_MUTE td(3)

SVRR

td(stb-mute)
OUTn

aaa-000649

(1) Shutdown hold delay.


(2) Shutdown delay.
(3) Master mode shutdown delay.
Fig 12. Start-up and shutdown timing in non-I2C-bus mode

9. I2C-bus specification
TDF8530 address with hardware address select.

Table 8. I2C-bus write address selection using pins MOD and ADS
RADS (k) RMOD (k) R/W
0[1] 6.8 33 100
100 44h 54h 64h 74h 1 = Read from TDF8530
33 42h 52h 62h 72h 0 = Write to TDF8530
6.8 40h 50h 60h 70h
0[1] non-I2C-bus mode select

[1] Short circuited to ground.

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Product short data sheet Rev. 3 — 20 October 2011 16 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

SCL SCL

SDA SDA

Mμp START STOP Mμp (1)

SLAVE (1) SLAVE (2)

001aai792 001aai793

(1) When SCL is HIGH, SDA changes to form the start or (1) SDA is allowed to change.
stop condition. (2) All data bits must be valid on the positive edges of SCL.
Fig 13. I2C-bus start and stop conditions Fig 14. Data bits sent from Master microprocessor
(Mp)

SCL 1 2 7 8 9 1 2 7 8 9

SDA MSB MSB − 1 LSB + 1 ACK MSB MSB − 1 LSB + 1 LSB ACK

Mμp START ADDRESS WRITE WRITE DATA STOP

SLAVE ACK ACK(1)


001aai794

(1) To stop the transfer after the last acknowledge a stop condition must be generated.
Fig 15. I2C-bus write

SCL 1 2 7 8 9 1 2 7 8 9

SDA MSB MSB − 1 LSB + 1 ACK MSB MSB − 1 LSB + 1 LSB

Mμp START ADDRESS READ ACK(1) STOP

SLAVE ACKNOWLEDGE READ DATA


001aai795

(1) To stop the transfer, the last byte must not be acknowledged (SDA is HIGH) and a stop condition must be generated.
Fig 16. I2C-bus read

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Product short data sheet Rev. 3 — 20 October 2011 17 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

9.1 Instruction bytes


If R/W bit = 0, the TDF8530 expects four instruction bytes: IB1, IB2 IB3, and IB4.
Reserved instruction bits must be programmed to zero. After a power-on reset, all
instruction bits are set to zero.

Table 9. Instruction byte descriptions


Bit Value Description
Instruction byte IB1 Instruction byte IB2 Instruction byte IB3 Instruction byte IB4
D7 0 offset detection on pin offset protection on latch information on pins undervoltage protection
DIAG ADS and MOD when the threshold for 6 V minimum
amplifier starts switching supply
1 no offset detection on pin offset protection off latch information on pins undervoltage protection
DIAG ADS and MOD threshold for 8 V minimum
supply
D6 0 channel 1 offset channel 2 offset channel 3 offset channel 4 offset
monitoring on monitoring on monitoring on monitoring on
1 channel 1 offset channel 2 offset channel 3 offset channel 4 offset
monitoring off monitoring off monitoring off monitoring off
D5 0 channel 1 clip detect on channel 2 clip detect on channel 3 clip detect on channel 4 clip detect on
pin DIAG pin DIAG pin DIAG pin DIAG
1 channel 1 no clip detect channel 2 no clip detect channel 3 no clip detect channel 4 no clip detect
on pin DIAG on pin DIAG on pin DIAG on pin DIAG
D4 0 disable frequency hopping thermal pre-warning on clip detection at enable phase staggering
pin DIAG THD = 0.2 % between channels 1 and
2, and 3 and 4
1 enable frequency no thermal pre-warning on clip detection at no phase staggering
hopping[1] pin DIAG THD = 10 % between channels 1 and
2, and 3 and 4
D3 0 oscillator frequency as set temperature pre-warning 1  detection level for phase shift in slave mode
with Rosc  10 % at 140 C shorted load detection with respect to master
1 oscillator frequency as set temperature pre-warning 2  detection level for clock, oscillator phase
with Rosc + 10 % at 120 C shorted load detection shift bits IB4[D3] to
IB4[D2[2]
D2 0 disable AC-load detection DC-load detection fOSCIO = fosc[3]
on pin DIAG disabled
1 enable AC-load detection DC-load detection fOSCIO = 2  fosc[3]
on pin DIAG enabled
D1 0 channel 1 enabled channel 2 enabled channel 3 enabled channel 4 enabled
1 channel 1 disabled channel 2 disabled channel 3 disabled channel 4 disabled
D0 0 TDF8530 in Standby all channels operating AD modulation oscillator watchdog
mode enabled during amplifier
shut down only
1 TDF8530 in Mute or all channels muted BD modulation oscillator watchdog
Operating modes[4] enabled

[1] See IB1[D3].


[2] See Table 10 “Phase shift bit settings” for information on IB4[D3] to IB4[D2].
[3] See Table 4 “Oscillator modes”
[4] See IB2[D0].

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Product short data sheet Rev. 3 — 20 October 2011 18 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Table 10. Phase shift bit settings


D3 D2 Phase
0 0 0
0 1 1⁄
8 
1 0 2⁄
8 
1 1 3⁄
8 

9.2 Data bytes


If R/W = 1, the TDF8530 sends four data bytes to the microprocessor (DB1, DB2, DB3
and DB4). All short diagnostic and offset protection bits and bits OTP, UVP and OVP are
latched. In addition, all bits are reset after a read operation except the DC load detection
bits (DBx[D3,D4], DB1[D6]). The default setting for all bits is logic 0.

Table 11. Description of data bytes


Bit Value DB1 channel 1 DB2 channel 2 DB3 channel 3 DB4 channel 4
D7 0 at least 1 instruction bit below maximum reserved reserved
set to logic 1 temperature
1 all instruction bits are set maximum temperature - -
to logic 0 protection occurred
D6 0 invalid DC load data no temperature warning reserved reserved
1 valid DC load data temperature pre-warning - -
active
D5 0 no overvoltage no undervoltage reserved reserved
1 overvoltage protection undervoltage protection - -
occurred occurred
D4 0 speaker load channel 1 speaker load channel 2 speaker load channel 3 speaker load channel 4
1 open load channel 1 open load channel 2 open load channel 3 open load channel 4
D3 0 no shorted load channel 1 no shorted load channel 2 no shorted load channel 3 no shorted load channel 4
1 shorted load channel 1 shorted load channel 2 shorted load channel 3 shorted load channel 4
D2 0 no offset PLL not locked (slave clock running start up diagnostics
mode) finished
1 offset detected on PLL locked (slave mode) clock failure start up diagnostics in
channels selected with progress
IBx[D6]
D1 0 no short to VP channel 1 no short to VP channel 2 no short to VP channel 3 no short to VP channel 4
1 short to VP channel 1 short to VP channel 2 short to VP channel 3 short to VP channel 4
D0 0 no short to ground no short to ground no short to ground no short to ground
channel 1 channel 2 channel 3 channel 4
1 short to ground channel 1 short to ground channel 2 short to ground channel 3 short to ground channel 4

Data byte DB1[D7] indicates whether the instruction bits have been set to logic 0. In
principle, DB1[D7] is set after a POR or when all the instruction bits are programmed to
logic 0. Pin DIAG is driven LOW when bit DB1[D7] = 1.

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Product short data sheet Rev. 3 — 20 October 2011 19 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

10. Limiting values


Table 12. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VP supply voltage Operating mode - 29 V
off state [1] 1 +50 V
load dump; duration - 50 V
50 ms; tr > 2.5 ms
IORM repetitive peak output maximum output current [2] 8 - A
current limiting
IOM peak output current non-repetitive - 18 A
Isink(max) maximum sink current pin DIAG 0 5 mA
Vi input voltage referred to GNDD: 0 5.5 V
pins SCL, SDA and
OSCIO
referred to AGND: 0 5.5 V
pins ADS, MOD, SSM,
EN and SEL_MUTE
referred to AGND: 0 10 V
pins IN1P, IN2P, IN3P,
IN4P and INN
Vo output voltage referred to GNDD: 0 10 V
pin DIAG
RESR equivalent series resistance as seen between pins VP - 200 m
and PGNDx
Tj junction temperature - 150 C
Tstg storage temperature 55 +150 C
Tamb ambient temperature 40 +85 C
VESD electrostatic discharge HBM [3]

voltage C = 100 pF; - 2000 V


Rs = 1.5 k
CDM [4]

non-corner pins - 500 V


(except pin 30, VDDA)
pin 30, VDDA - 300 V
corner pins - 750 V
V(prot) protection voltage AC and DC short circuit [5] 0 VP V
voltage of output pins
across load and to
supply and ground

[1] Floating condition assumed for outputs.


[2] Current limiting concept.
[3] Human Body Model (HBM).
[4] Charged-Device Model (CDM).
[5] The output pins are defined as the output pins of the filter connected between the TDF8530 output pins and
the load.

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Product short data sheet Rev. 3 — 20 October 2011 20 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

11. Thermal characteristics


Table 13. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-a) thermal resistance from junction to ambient in free air 35 K/W
Rth(j-c) thermal resistance from junction to case 1 K/W

12. Static characteristics


Table 14. Static characteristics
VP = 14.4 V; fosc = 315 kHz; Tamb = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Supply
VP supply voltage Operating mode; on pins VDDA and 6 14.4 24 V
VP1 and VP2
IP supply current off state; Tj  85 C; VP = 14.4 V - 2 10 A
Iq(tot) total quiescent current Operating mode; no load, no - 185 200 mA
snubbers and no filter connected
I2C-bus interface: pins SCL and SDA
VIL LOW-level input voltage 0 - 1.5 V
VIH HIGH-level input voltage 2.3 - 5.5 V
VOL LOW-level output voltage pin SDA; Iload = 5 mA 0 - 0.4 V
Enable and SEL_MUTE input: pins EN and SEL_MUTE
Vi input voltage pin EN; off state 0 - 0.8 V
pin EN; Standby mode; I2C-bus 2 - 5 V
mode
pin EN; Mute mode or Operating 2 - 5 V
mode; non-I2C-bus mode
pin SEL_MUTE; Mute mode; 0 - 0.8 V
voltage on pin EN > 2 V
pin SEL_MUTE; Operating mode; 3 - 5 V
voltage on pin EN > 2 V
Ii input current pin EN; 2.5 V - - 5 A
pin SEL_MUTE; Operating mode; - - 50 A
0.8 V

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Product short data sheet Rev. 3 — 20 October 2011 21 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Table 14. Static characteristics …continued


VP = 14.4 V; fosc = 315 kHz; Tamb = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Diagnostic output
THDclip total harmonic distortion clip IB3[D4] = 0 - 0.2 - %
detection level IB3[D4] = 1 - 10 - %
Vth(offset) threshold voltage for offset VDDA > 8 V [1] 1 2 3 V
detection
VOL LOW-level output voltage DIAG, SCL or SDA pins; diagnostic - - 0.3 V
activated; Io = 1 mA
IL leakage current DIAG, SCL or SDA pins; diagnostic - - 50 A
not activated
Audio inputs; pins INN, IN1P, IN2P, IN3P and IN4P
Vi input voltage - 2.45 - V
SVRR voltage and ACGND input bias voltage in Mute and Operating modes
Vref reference voltage input ACGND pin - 2.45 - V
half supply reference SVRR pin - 7.2 - V
Amplifier outputs; pins OUT1N, OUT1P, OUT2N, OUT2P, OUT3N, OUT3P, OUT4N and OUT4P
VO(offset) output offset voltage Mute mode - - 25 mV
Operating mode [2] - - 70 mV
Stabilizer output; pins VSTAB1 and VSTAB2
Vo output voltage stabilizer output in Mute mode and - 11 - V
Operating mode
Voltage protections
V(prot) protection voltage undervoltage protection level 1; 5.5 5.75 6 V
falling supply; IB4[D7] = 0
undervoltage protection level 2; 7.2 7.6 8 V
falling supply; IB4[D7] = 1
overvoltage protection level 26.2 27 - V
VP at which a POR occurs - 4.4 - V
Current protection
IO(ocp) overcurrent protection output current limiting concept 8 9 - A
current
Temperature protection
Tprot protection temperature - 152 - C
Tact(th_fold) thermal foldback activation gain = 1 dB - 145 - C
temperature
Tj(AV)(warn1) average junction temperature IB2[D3] = 0; non-I2C-bus mode - 140 - C
for pre-warning 1
Tj(AV)(warn2) average junction temperature IB2[D3] = 1 - 120 - C
for pre-warning 2
DC load detection levels: I2C-bus mode only

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Product short data sheet Rev. 3 — 20 October 2011 22 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Table 14. Static characteristics …continued


VP = 14.4 V; fosc = 315 kHz; Tamb = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Zth(load) load detection threshold for normal speaker load; 1.6 - 20 
impedance IB3[D3] = 0; 1  shorted load
detection level
for normal speaker load; 3.2 - 20 
IB3[D3] = 1; 2  shorted load
detection level
Zth(open) open load detection threshold 80 - - 
impedance
Zth(short) shorted load detection for shorted speaker load; - - 0.5 
threshold impedance IB3[D3] = 0; 1  shorted load
detection level
for shorted speaker load; - - 1.5 
IB3[D3] = 1; 2  shorted load
detection level
AC load detection levels: I2C-bus mode only
Ith(o)det(load)AC AC load detection output - 500 - mA
threshold current
Start-up/shut-down/mute timing
twake wake-up time on pin EN before first I2C-bus [3] - - 500 s
transmission is recognized
tdet(DCload) DC load detection time CON = 470 nF [3] - 320 - ms
td(stb-mute) delay time from standby to measured from amplifier enabling - 125 - ms
mute to start of unmute (no DC load
detection); CSVRR = 47 F
td(mute-fgain) mute to full gain delay time CON = 470 nF [4] - 50 - ms
td delay time shutdown delay time from EN pin 130 190 250 ms
LOW to SVRR LOW; voltage on
pin SVRR < 1 V; CSVRR = 47 F;
CON = 470 nF
shutdown hold delay time from pin - 400 - ms
EN LOW to ACGND LOW; voltage
on pin ACGND < 1 V; Master
mode
hold delay in Master mode to allow - 50 - ms
slaved devices to shut down
fosc = 315 kHz

[1] Maximum leakage current from DCP pin to ground = 3 A.


[2] DC output offset voltage is applied to the output gradually during the transition between Mute mode and Operating mode.
[3] I2C-bus mode only.
[4] The transition time between Mute mode and Operating mode is determined by the time constant on the SEL_MUTE pin.

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Product short data sheet Rev. 3 — 20 October 2011 23 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

12.1 Switching characteristics


Table 15. Switching characteristics
VP = 14.4 V; Tamb = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Internal oscillator
fPWM PWM frequency Rosc = 39 k - 315 - kHz
fPWM(range) PWM frequency range typical fixed frequency and Spread - 300 to 500 - kHz
spectrum mode frequency based on
the resistor value connected to pin
OSCSET for the master setting
Master/slave setting (OSCIO pin)
Rosc oscillator resistance resistor value on pin OSCSET; 22 39 49 k
master setting
VOL LOW-level output voltage output - - 0.8 V
VOH HIGH-level output voltage output 4 - - V
fo output frequency IB3[D2] = 0; Rosc = 49 k 200 250 300 kHz
IB3[D2] = 1; Rosc = 49 k 400 500 600 kHz
IB3[D2] = 0; Rosc = 22 k 460 500 575 kHz
IB3[D2] = 1; Rosc = 22 k 920 1050 1150 kHz
VIL LOW-level input voltage input - - 0.8 V
VIH HIGH-level input voltage input 3 - - V
fi input frequency IB3[D2] = 0 300 - 500 kHz
IB3[D2] = 1 [1] 600 - 1000 kHz
COSCIO capacitance on pin OSCIO output, used by slave with PLL - - 560 pF
operation
output, used by slave without PLL - - 68 pF
operation
Spread spectrum mode setting
fosc oscillator frequency variation between maximum and minimum - 10 - %
values; Spread spectrum mode
activated
fsw switching frequency Spread spectrum mode activated; - 7 - Hz
CSSM = 1 F
Frequency hopping
fosc(int) internal oscillator frequency change positive; IB1[D4] = 1; - fosc + 10 % - kHz
IB1[D3] = 1
change negative; IB1[D4] = 1; - fosc  10 % - kHz
IB1[D3] = 0

[1] Amplifier output stage switching frequency is half the external oscillator frequency.

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Product short data sheet Rev. 3 — 20 October 2011 24 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

13. Dynamic characteristics


Table 16. Dynamic characteristics
VP = 14.4 V; RL = 4 ; fi = 1 kHz; fosc = 315 kHz; Rs(L) < 0.04 [1]; Tamb = 25 C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Po output power THD = 1 %; RL = 4  [2] 18 20 - W
THD = 10 %; RL = 4  24 26 - W
square wave (EIAJ); RL = 4  - 40 - W
VP = 24 V; THD = 10 %; RL = 4  - 70 - W
THD = 1 %; RL = 2  29 33 - W
THD = 10 %; RL = 2  39 45 - W
square wave (EIAJ); RL = 2  - 66 - W
VP = 24 V; THD = 10 %; RL = 2  - 100 - W
THD total harmonic distortion fi = 1 kHz; Po = 1 W [3] - 0.02 0.1 %
Gv(cl) closed-loop voltage gain 25 26 27 dB
cs channel separation fi = 1 kHz; Po = 1 W 60 70 - dB
SVRR supply voltage rejection ratio Operating mode
BD mode; fripple = 100 Hz [4] - 70 - dB
BD mode; fripple = 1 kHz [4] - 70 - dB
Mute mode
BD mode; fripple = 1 kHz [4] - 70 - dB
Off or Standby mode
BD mode; fripple = 1 kHz [4] - 70 - dB
Zi(dif) differential input impedance 30 50 75 k
Vn(o) output noise voltage Operating mode
BD mode [5] - 60 77 V
AD mode [5] - 100 140 V
Mute mode
BD mode [6] - 25 32 V
AD mode [6] - 95 110 V
bal(ch) channel balance - 0 1 dB
mute mute attenuation [7] 70 - - dB
CMRR common mode rejection ratio Vi(cm) = 1 V RMS 65 80 - dB
po output power efficiency Po = 20 W - 90 - %

[1] Rs(L) is the sum of the inductor series resistance from the low-pass LC filter in the application together with all resistance from PCB
traces or wiring between the output pin of the TDF8530 and the inductor to the measurement point. LC filter dimensioning is L = 10 H,
C = 1 F for 4  load and L = 5 H, C = 2.2 F for 2  load.
[2] Output power is measured indirectly based on RDSon measurement.
[3] Total harmonic distortion is measured at the bandwidth of 22 Hz to 20 kHz, AES brick wall. The maximum limit is guaranteed but may
not be 100 % tested.
[4] Vripple = Vripple(max) = 1 V (p-p); Rs = 0 .
[5] B = 22 Hz to 20 kHz, AES brick wall, Rs = 0 .
[6] B = 22 Hz to 20 kHz, AES brick wall, independent of Rs.
[7] Vi = Vi(max) = 0.5 V RMS.

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Product short data sheet Rev. 3 — 20 October 2011 25 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

14. Application information

14.1 Output power estimation


The output power, just before clipping, can be estimated using Equation 1:

RL f osc 2
  -----------------------------------------------------   1 – t  --------  V P 
  R L + 2   R DSon + R s   w  min  2  
Po 1 = -------------------------------------------------------------------------------------------------------------------------------------  W  (1)
2  RL

Where,

• VP = supply voltage (V)


• RL = load impedance ()
• RDSon = drain source on-state resistance ()
• Rs = series resistance of the output inductor ()
• tw(min) = minimum pulse width(s) depending on output current
• fosc = oscillator frequency in Hz (typically 315 kHz)

The output power at 10 % THD can be estimated using Equation 2:

P o  2  = 1.25  P o  1  (2)

where Po(1) = 0.5 % and Po(2) = 10 %

Figure 17 and Figure 18 show the estimated output power at THD = 0.5 % and
THD = 10 % as a function of supply voltage for different load impedances.

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Product short data sheet Rev. 3 — 20 October 2011 26 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

aaa-000448 aaa-000449
100 120
Po
(W) Po
80 (W)

80
60 (1)
(1)

40
(2)
(2)
40

20

0 0
8 12 16 20 24 8 12 16 20 24
VP (V) VP (V)

THD = 0.5 %. THD = 10 %.


RDSon = 0.190  (at Tj = 100 C), Rs = 0.05 , RDSon = 0.190  (at Tj = 100 C), Rs = 0.05 ,
tw(min) = 150 ns and IO(ocp) = 9 A (typical). tw(min) = 150 ns and IO(ocp) = 9 A (typical).
(1) RL = 2 . (1) RL = 2 .
(2) RL = 4 . (2) RL = 4 .
Fig 17. Po as a function of VP with THD = 0.5 % Fig 18. Po as a function of VP with THD = 10 %

14.2 Output current limiting


The peak output current is internally limited to 8 A minimum. During normal operation, the
output current should not exceed this threshold level otherwise the output signal will be
distorted. The peak output current can be estimated using Equation 3:

VP
I o  -----------------------------------------------------  8 [A] (3)
R L + 2   R DSon + R s 

• Io = output current (A)


• VP = supply voltage (V)
• RL = load impedance ()
• RDSon = on-resistance of power switch ()
• Rs = series resistance of output inductor ()

Example: A 2  speaker can be used with a supply voltage of 22 V before current limiting
is triggered.

Current limiting (clipping) avoids audio holes but causes distortion similar to voltage
clipping.

14.3 Speaker configuration and impedance


A flat-frequency response (due to a 2nd order Butterworth filter) is obtained by changing
the values of low-pass filter components (LLC, CLC) based on the speaker configuration
and impedance. Figure 19 shows the circuit and Table 17 gives the required values.

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Product short data sheet Rev. 3 — 20 October 2011 27 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

LLC
out-

CLC

TDF8530 load
CLC
LLC
out+
aaa-000450

Fig 19. Filter component values

Table 17. Filter component values


Load impedance () LLC (H) CLC (F)
2 5 2.2
4 10 1

14.4 Heat sink requirements


In most applications, it is necessary to connect an external heat sink to the TDF8530.
Thermal foldback activates at Tj = 140 C. The expression in Equation 4 shows the
relationship between the maximum power dissipation before activation of thermal foldback
and the total thermal resistance from junction to ambient:

T j  max  – T amb
R th  j-a  = -----------------------------------  K/W  (4)
P max

Pmax is determined by the efficiency () of the TDF8530. The efficiency measured as a
function of output power is given in Figure 25. The power dissipation can be derived as a
function of output power (see Figure 24).

Example 1:

• VP = 14.4 V
• Po = 4  25 W into 4  (THD = 10 % continuous)
• Tj(max) = 140 C
• Tamb = 25 C
• Pmax = 9.5 W (from Figure 24)
• The required Rth(j-a) = 115 C / 9.5 W = 12 K/W

The total thermal resistance Rth(j-a) consists of: Rth(j-c) + Rth(c-h) + Rth(h-a)

Where:

• Thermal resistance from junction to case (Rth(j-c)) = 1 K/W


• Thermal resistance from case to heat sink (Rth(c-h)) = 0.5 K/W to 1 K/W (depending on
mounting)
• Thermal resistance from heat sink to ambient (Rth(h-a)) would then be
12  (1 + 1) = 10 K/W.

If an audio signal has a crest factor of 10 (the ratio between peak power and average
power = 10 dB) then Tj will be much lower.

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Product short data sheet Rev. 3 — 20 October 2011 28 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Example 2:

• VP = 14.4 V
• Po = 4  (25 W / 10) = 4  2.5 W into 4  (audio with crest factor of 10)
• Tamb = 25 C
• Pmax = 4 W (from Figure 24)
• Rth(j-a) = 12 K/W
• Tj(max) = 25 C + (4 W  12 K/W) = 73 C

14.5 Curves measured in reference design

aaa-000451 aaa-000452
102 102
THD + N THD + N
(%) (%)
10 10

1 1

(1) (1)
10-1 10-1

(2) (2)

10-2 (3) 10-2 (3)

10-3 10-3
10-1 1 10 102 10-1 1 10 102
Po (W) Po (W)

(1) VP = 14.4 V; RL = 2  at 10 kHz. (1) VP = 14.4 V; RL = 4  at 10 kHz.


(2) VP = 14.4 V; RL = 2  at 1 kHz. (2) VP = 14.4 V; RL = 4  at 1 kHz.
(3) VP = 14.4 V; RL = 2  at 100 kHz. (3) VP = 14.4 V; RL = 4  at 100 kHz.
Fig 20. THD + N as a function of output power with a Fig 21. THD + N as a function of output power with a
2  load 4  load

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NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

aaa-000453 aaa-000454
1 1

THD + N THD + N
(%) (%)

10-1 10-1

(2)

(1)
(1)
10-2 10-2
(2)

10-3 10-3
10 102 103 104 105 10 102 103 104 105
f (Hz) f (Hz)

(1) VP = 14.4 V; RL = 2  at 10 W. (1) VP = 14.4 V; RL = 4  at 10 W.


(2) VP = 14.4 V; RL = 2  at 1 W. (2) VP = 14.4 V; RL = 4  at 1 W.
Fig 22. THD + N as a function of frequency with a 2  Fig 23. THD + N as a function of frequency with a 4 
load load

aaa-000456 aaa-000455
14 100
PD
ƞ
(W)
12 (%)
80
10

60
8

6
40

4
20
2

0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
Po (W) Po (W)

VP = 14.4 V; RL = 4 ; f = 1 kHz. VP = 14.4 V; RL = 4 ; f = 1 kHz.


Fig 24. Power dissipation as a function of output Fig 25. Efficiency as a function of output power with a
power with a 4  load; all channels driven 4  load; all channels driven

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NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

aaa-000458 aaa-000457
35 100
PD
ƞ
(W)
30 (%)
80
25

60
20

15
40

10
20
5

0 0
0 10 20 30 40 50 0 10 20 30 40 50
Po (W) Po (W)

VP = 14.4 V; RL = 4 ; f = 1 kHz. VP = 14.4 V; RL = 4 ; f = 1 kHz.


Fig 26. Power dissipation as a function of output Fig 27. Efficiency as a function of output power with a
power with a 2  load; all channels driven 2  load; all channels driven

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NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

14.6 Typical application schematics

bead
VP1
100 μF
bead 35 V
VP2
100 μF
bead 35 V
VP VPA
1000 μF
35 V PGND1
GND
PGND2

LLC
OUT1P 1 μF
VSTAB1 GNDD/HW
100 nF 10 Ω 1 44
CLC
100 nF
22 Ω BOOT1P VDDD
2 43
470 pF 470 pF 15 nF
VP1 PGND1 OUT1P OSCIO 39 kΩ
3 42
470 pF 470 pF
22 Ω 100 nF MASTER MODE
CLC
OUT1N OSCSET
4 41
10 Ω 15 nF
100 nF 1 μF
LLC
BOOT1N SSM spread spectrum
OUT1N 5 40
mode
LLC VP1 VP1 SDA
6 39
OUT2N 100 nF
100 nF
CLC 10 Ω PGND1 SCL
7 38
PGND1
22 Ω BOOT2N ADS non-I2C-bus
470 pF 470 pF 8 37 mode
15 nF
VP1 PGND1 6.8 kΩ
OUT2N MOD
470 pF 470 pF 9 36 BD modulation setting
22 Ω
CLC OUT2P DCP DC offset protection
10 Ω 10 35 disabled (1)
100 nF 15 nF
LLC BOOT2P DIAG 10 kΩ
OUT2P 11 34 VPull-up
LLC
TDF8530
BOOT3P EN
OUT3P 12 33 enable
15 nF
100 nF 10 Ω
CLC OUT3P SEL_MUTE
13 32 mute/on
22 Ω 470 nF
470 pF 470 pF OUT3N SVRR
14 31
VP2 PGND2 15 nF 47 μF
470 pF BOOT3N VDDA bead
470 pF
22 Ω
15 30 VPA
CLC 2.2 μF
PGND2 PGND2 AGND
10 Ω 16 29
100 nF
LLC 100 nF CACGND 100 nF
OUT3N VP2 ACGND
17 28
LLC VP2
CINN 2.2 μF
OUT4N BOOT4N INN
18 27
100 nF 10 Ω 15 nF
CLC
OUT4N IN1P CIN1P 470 nF
19 26 IN1P
22 Ω
470 pF 470 pF OUT4P IN2P CIN2P 470 nF
VP2 PGND2 20 25 IN2P
15 nF
470 pF 470 pF CIN3P
BOOT4P IN3P 470 nF
22 Ω 21 24 IN3P
CLC
1 μF CIN4P
10 Ω VSTAB2 IN4P 470 nF
100 nF 22 23 IN4P
LLC aaa-000459
OUT4P

4  BTL mode in non-I2C-bus mode with DC offset protection disabled, Spread spectrum mode enabled, BD modulation.
(1) See Section 8.3.5 on page 11 for detailed information on DC offset protection.
Fig 28. Example application diagram 4  BTL in non-I2C-bus mode

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Product short data sheet Rev. 3 — 20 October 2011 32 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

bead
VP1
100 μF
bead 35 V
VP2
100 μF
bead 35 V
VP VPA
1000 μF
35 V PGND1
GND
PGND2

LLC
OUT1P 1 μF
VSTAB1 GNDD/HW
100 nF 10 Ω 1 44
CLC
100 nF
22 Ω BOOT1P VDDD
2 43
470 pF 470 pF 15 nF
VP1 PGND1 OUT1P OSCIO 39 kΩ
3 42
470 pF 470 pF
22 Ω 100 nF MASTER MODE
CLC
OUT1N OSCSET
4 41
10 Ω 15 nF
100 nF
LLC
BOOT1N SSM
5 40 fixed frequency
OUT1N
LLC VP1 VP1 SDA
6 39
OUT2N 100 nF connect to uP
100 nF
CLC 10 Ω PGND1 SCL
7 38
PGND1
22 Ω RADS
BOOT2N ADS
470 pF 470 pF 8 37 I2C address select
15 nF
VP1 PGND1 RMOD
OUT2N MOD
470 pF 470 pF 9 36 I2C address range select
22 Ω
4.7 μF
CLC OUT2P DCP DC offset protection
10 Ω 10 35 enabled (1)
100 nF 15 nF
LLC BOOT2P DIAG 10 kΩ
OUT2P 11 34 VPull-up
LLC
TDF8530
BOOT3P EN
OUT3P 12 33 enable
15 nF
100 nF 10 Ω
CLC OUT3P SEL_MUTE
13 32
22 Ω 470 nF
470 pF 470 pF OUT3N SVRR
14 31
VP2 PGND2 15 nF 47 μF
470 pF BOOT3N VDDA bead
470 pF
22 Ω
15 30 VPA
CLC 2.2 μF
PGND2 PGND2 AGND
10 Ω 16 29
100 nF
LLC 100 nF CACGND 100 nF
OUT3N VP2 ACGND
17 28
LLC VP2
CINN 2.2 μF
OUT4N BOOT4N INN
18 27
100 nF 10 Ω 15 nF
CLC
OUT4N IN1P CIN1P 470 nF
19 26 IN1P
22 Ω
470 pF 470 pF OUT4P IN2P CIN2P 470 nF
VP2 PGND2 20 25 IN2P
15 nF
470 pF 470 pF CIN3P
BOOT4P IN3P 470 nF
22 Ω 21 24 IN3P
CLC
1 μF CIN4P
10 Ω VSTAB2 IN4P 470 nF
100 nF 22 23 IN4P
LLC aaa-000460
OUT4P

4  BTL mode in I2C-bus mode with DC offset protection enabled, Spread spectrum mode disabled.
(1) See Section 8.3.5 on page 11 for detailed information on DC offset protection.
Fig 29. Example application diagram: 4  BTL in I2C-bus mode

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Product short data sheet Rev. 3 — 20 October 2011 33 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

15. Package outline

HSOP44: plastic, heatsink small outline package; 44 leads; low stand-off height SOT1131-1

E A

D x

c
y X
E2

HE v A

D1

D2

1 22

pin 1 index

E1 A2 A
(A3)
A4

Lp

detail X
44 23

w
Z e bp

y Z θ

1.30 8°
0.07 1.13 4°
0 5 10 mm
0.95 0°
Dimensions scale

Unit A A2 A3 A4 bp c D(1) D1 D2 E(1) E1 E2 e HE Lp Q v w x

max 3.5 3.5 +0.08 0.38 0.32 16.0 13.0 1.10 11.1 6.2 2.9 14.5 1.10 1.7
mm nom 3.3 0.35 +0.02 0.30 0.25 15.9 12.8 1.00 11.0 6.0 2.7 0.65 14.2 0.91 1.6 0.25 0.12 0.03
min 3.2 −0.04 0.25 0.23 15.8 12.6 0.90 10.9 5.8 2.5 13.9 0.80 1.5
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. sot1131-1_po

Outline References European


Issue date
version IEC JEDEC JEITA projection
09-03-23
SOT1131-1
10-08-18

Fig 30. Package outline SOT1131-1 (HSOP44)

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Product short data sheet Rev. 3 — 20 October 2011 34 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

16. Soldering of SMD packages


This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.

16.1 Introduction to soldering


Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.

16.2 Wave and reflow soldering


Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:

• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.

The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.

Key characteristics in both wave and reflow soldering are:

• Board specifications, including the board finish, solder masks and vias
• Package footprints, including solder thieves and orientation
• The moisture sensitivity level of the packages
• Package placement
• Inspection and repair
• Lead-free soldering versus SnPb soldering

16.3 Wave soldering


Key characteristics in wave soldering are:

• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities

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Product short data sheet Rev. 3 — 20 October 2011 35 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

16.4 Reflow soldering


Key characteristics in reflow soldering are:

• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 31) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 18 and 19

Table 18. SnPb eutectic process (from J-STD-020C)


Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350  350
< 2.5 235 220
 2.5 220 220

Table 19. Lead-free process (from J-STD-020C)


Package thickness (mm) Package reflow temperature (C)
Volume (mm3)
< 350 350 to 2000 > 2000
< 1.6 260 260 260
1.6 to 2.5 260 250 245
> 2.5 250 245 245

Moisture sensitivity precautions, as indicated on the packing, must be respected at all


times.

Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 31.

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Product short data sheet Rev. 3 — 20 October 2011 36 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

maximum peak temperature


temperature = MSL limit, damage level

minimum peak temperature


= minimum soldering temperature

peak
temperature

time
001aac844

MSL: Moisture Sensitivity Level


Fig 31. Temperature profiles for large and small components

For further information on temperature profiles, refer to Application Note AN10365


“Surface mount reflow soldering description”.

17. Abbreviations
Table 20. Abbreviations
Abbreviation Description
BCDMOS Bipolar Complementary and double Diffused Metal-Oxide Semiconductor
BTL Bridge-Tied Load
DCP DC offset Protection
DMOST double Diffused Metal-Oxide Semiconductor Transistor
EMI ElectroMagnetic Interference
THD Total Harmonic Distortion
I2C Inter-Integrated Circuit
LSB Least Significant Bit
Mp Master microprocessor
MSB Most Significant Bit
NDMOST N-type double Diffused Metal-Oxide Semiconductor Transistor
OCP OverCurrent Protection
OTP OverTemperature Protection
OVP OverVoltage Protection
PLL Phase-Locked Loop
POR Power-On Reset
PWM Pulse-Width Modulation
SOI Silicon-On-Insulator

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Product short data sheet Rev. 3 — 20 October 2011 37 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Table 20. Abbreviations …continued


Abbreviation Description
TFP Thermal Foldback Protection
UVP UnderVoltage Protection
WP Window Protection

18. Revision history


Table 21. Revision history
Document ID Release date Data sheet status Change notice Supersedes
TDF8530_SDS v.3 20111020 Product short data sheet - TDF8530_SDS v.2
Modifications: • Data sheet status changed from Objective short data sheet to Product short data sheet.
TDF8530_SDS v.2 20111014 Objective short data sheet - TDF8530_SDS v.1
Modifications: • Changed Table 15 on page 24: Changes to internal oscillator parameters and output
frequency data.
TDF8530_SDS v.1 20111011 Objective short data sheet - -

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Product short data sheet Rev. 3 — 20 October 2011 38 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

19. Legal information

19.1 Data sheet status


Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

19.2 Definitions malfunction of an NXP Semiconductors product can reasonably be expected


to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
Draft — The document is a draft version only. The content is still under
NXP Semiconductors products in such equipment or applications and
internal review and subject to formal approval, which may result in
therefore such inclusion and/or use is at the customer’s own risk.
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of Applications — Applications that are described herein for any of these
information included herein and shall have no liability for the consequences of products are for illustrative purposes only. NXP Semiconductors makes no
use of such information. representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended Customers are responsible for the design and operation of their applications
for quick reference only and should not be relied upon to contain detailed and and products using NXP Semiconductors products, and NXP Semiconductors
full information. For detailed and full information see the relevant full data accepts no liability for any assistance with applications or customer product
sheet, which is available on request via the local NXP Semiconductors sales design. It is customer’s sole responsibility to determine whether the NXP
office. In case of any inconsistency or conflict with the short data sheet, the Semiconductors product is suitable and fit for the customer’s applications and
full data sheet shall prevail. products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
Product specification — The information and data provided in a Product design and operating safeguards to minimize the risks associated with their
data sheet shall define the specification of the product as agreed between applications and products.
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however, NXP Semiconductors does not accept any liability related to any default,
shall an agreement be valid in which the NXP Semiconductors product is damage, costs or problem which is based on any weakness or default in the
deemed to offer functions and qualities beyond those described in the customer’s applications or products, or the application or use by customer’s
Product data sheet. third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
19.3 Disclaimers the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.

Limited warranty and liability — Information in this document is believed to Limiting values — Stress above one or more limiting values (as defined in
be accurate and reliable. However, NXP Semiconductors does not give any the Absolute Maximum Ratings System of IEC 60134) will cause permanent
representations or warranties, expressed or implied, as to the accuracy or damage to the device. Limiting values are stress ratings only and (proper)
completeness of such information and shall have no liability for the operation of the device at these or any other conditions above those given in
consequences of use of such information. the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
In no event shall NXP Semiconductors be liable for any indirect, incidental,
repeated exposure to limiting values will permanently and irreversibly affect
punitive, special or consequential damages (including - without limitation - lost
the quality and reliability of the device.
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such Terms and conditions of commercial sale — NXP Semiconductors
damages are based on tort (including negligence), warranty, breach of products are sold subject to the general terms and conditions of commercial
contract or any other legal theory. sale, as published at http://www.nxp.com/profile/terms, unless otherwise
Notwithstanding any damages that customer might incur for any reason agreed in a valid written individual agreement. In case an individual
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards agreement is concluded only the terms and conditions of the respective
customer for the products described herein shall be limited in accordance agreement shall apply. NXP Semiconductors hereby expressly objects to
with the Terms and conditions of commercial sale of NXP Semiconductors. applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without No offer to sell or license — Nothing in this document may be interpreted or
limitation specifications and product descriptions, at any time and without construed as an offer to sell products that is open for acceptance or the grant,
notice. This document supersedes and replaces all information supplied prior conveyance or implication of any license under any copyrights, patents or
to the publication hereof. other industrial or intellectual property rights.

Suitability for use — NXP Semiconductors products are not designed, Export control — This document as well as the item(s) described herein
authorized or warranted to be suitable for use in life support, life-critical or may be subject to export control regulations. Export might require a prior
safety-critical systems or equipment, nor in applications where failure or authorization from competent authorities.

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Product short data sheet Rev. 3 — 20 October 2011 39 of 41


NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

Quick reference data — The Quick reference data is an extract of the whenever customer uses the product for automotive applications beyond
product data given in the Limiting values and Characteristics sections of this NXP Semiconductors’ specifications such use shall be solely at customer’s
document, and as such is not complete, exhaustive or legally binding. own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
Non-automotive qualified products — Unless this data sheet expressly
use of the product for automotive applications beyond NXP Semiconductors’
states that this specific NXP Semiconductors product is automotive qualified,
standard warranty and NXP Semiconductors’ product specifications.
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
19.4 Trademarks
In the event that customer uses the product for design-in and use in Notice: All referenced brands, product names, service names and trademarks
automotive applications to automotive specifications and standards, customer are the property of their respective owners.
(a) shall use the product without NXP Semiconductors’ warranty of the I2C-bus — logo is a trademark of NXP B.V.
product for such automotive applications, use and specifications, and (b)

20. Contact information


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com

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NXP Semiconductors TDF8530
I2C-bus controlled quad channel Class-D power amplifier

21. Contents
1 General description . . . . . . . . . . . . . . . . . . . . . . 1 16.1 Introduction to soldering. . . . . . . . . . . . . . . . . 35
2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 16.2 Wave and reflow soldering. . . . . . . . . . . . . . . 35
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 16.3 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . 35
16.4 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . 36
4 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
17 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 37
5 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
18 Revision history . . . . . . . . . . . . . . . . . . . . . . . 38
6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
19 Legal information . . . . . . . . . . . . . . . . . . . . . . 39
7 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
19.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 39
7.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
19.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
7.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
19.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 39
8 Functional description . . . . . . . . . . . . . . . . . . . 6 19.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 40
8.1 Master and slave mode selection . . . . . . . . . . . 6 20 Contact information . . . . . . . . . . . . . . . . . . . . 40
8.2 Operation mode selection. . . . . . . . . . . . . . . . . 6
21 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
8.2.1 Modulation mode . . . . . . . . . . . . . . . . . . . . . . . 7
8.2.2 Phase staggering (Slave mode) . . . . . . . . . . . . 8
8.3 Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
8.3.1 Thermal foldback . . . . . . . . . . . . . . . . . . . . . . 10
8.3.2 Overtemperature protection . . . . . . . . . . . . . . 10
8.3.3 Overcurrent protection . . . . . . . . . . . . . . . . . . 10
8.3.4 Window protection . . . . . . . . . . . . . . . . . . . . . 10
8.3.5 DC offset protection . . . . . . . . . . . . . . . . . . . . 11
8.3.6 Supply voltage protection . . . . . . . . . . . . . . . . 11
8.4 Diagnostic output . . . . . . . . . . . . . . . . . . . . . . 11
8.4.1 Diagnostic table . . . . . . . . . . . . . . . . . . . . . . . 11
8.4.2 Load identification (I2C-bus mode only) . . . . . 12
8.4.2.1 DC load detection . . . . . . . . . . . . . . . . . . . . . . 12
8.4.2.2 AC load detection (tweeter detection) . . . . . . 13
8.4.3 Clip detection . . . . . . . . . . . . . . . . . . . . . . . . . 14
8.4.4 Start-up and shutdown sequence . . . . . . . . . . 14
9 I2C-bus specification . . . . . . . . . . . . . . . . . . . . 16
9.1 Instruction bytes . . . . . . . . . . . . . . . . . . . . . . . 18
9.2 Data bytes. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 20
11 Thermal characteristics . . . . . . . . . . . . . . . . . 21
12 Static characteristics. . . . . . . . . . . . . . . . . . . . 21
12.1 Switching characteristics . . . . . . . . . . . . . . . . 24
13 Dynamic characteristics . . . . . . . . . . . . . . . . . 25
14 Application information. . . . . . . . . . . . . . . . . . 26
14.1 Output power estimation. . . . . . . . . . . . . . . . . 26
14.2 Output current limiting . . . . . . . . . . . . . . . . . . 27
14.3 Speaker configuration and impedance . . . . . . 27
14.4 Heat sink requirements. . . . . . . . . . . . . . . . . . 28
14.5 Curves measured in reference design . . . . . . 29
14.6 Typical application schematics . . . . . . . . . . . . 32
15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 34
16 Soldering of SMD packages . . . . . . . . . . . . . . 35

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2011. All rights reserved.


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 October 2011
Document identifier: TDF8530_SDS

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