Aim: To study I-V characteristics of N-MOSFET. Software used: Ng-spice Circuit Simulator (Version 36) Theory: ‘A metal-oxide-semiconductor field-effect transistor (MOSFET) is a field-effect transistor (FET) where the voltage determines the conductivity of the device. It is used for switching or amplifying signals. The ability to change conductivity with the amount of applied voltage can be used for amplifying or switching. MOSFETs are used over BJTs (bipolar junction transistors) in digital and analog circuits. MOSFETs generally have 3 terminals - Gate, Source, and Drain. Classification of MOSFETS: Depending upon the type of materials used in the construction, and the type of operation, the MOSFETs are classified as Enhancement, Depletion Type and N channel, P channel MOSFETs. Dee as ‘N channel and P channel MOSFETs are simply called NMOS and PMOS respectivelyce: MOSFET: N-Channel MOSFET: P-Channel Enhancement Type Enhancement Type MOSFET: N-Channel MOSFET: P-Channel Depletion Type Depletion Type Constructional details of an N channel MOSF! A lightly doped P-type substrate is taken into which two heavily doped N-type regions are diffused, which act as source and drain, Between these two N+ regions, there occurs diffusion to form an N-channel, connecting drain and soure: Metatization Layer Sioa Dielectric layer ro N Nt Dittused Chane! P-Type Substrate N-Channel DE-MOSFET Structure A thin layer of Silicon dioxide (Si02) is grown over the entire surface and holes are made to draw ohmic contacts for drain and source terminals. A conducting layer of aluminium is laid over the entire channel, upon this SiO2 layer from source to drain which constitutes the gate. The SiO2 substrate is connected to the common or ground terminals. Because of its construction, the MOSFET has a very less chip area than BJT, which is 5% of the occupancy when compared to bipolar junction transistors. This device can be operated in modes. They are depletion and enhancement modes. Let us try to get into the details 2[PageWorking of N - Channel MOS! The working of the n-channel MOSFET is based on the majority of the carriers that are electrons. These moving electrons in the channel are responsible for the flow of current in the transistor. The p-substrate material is required in the formation of the gate terminals, N-Channel with Enhancement MOSFET: An n-channel MOSFET’s body is formed due to the p-substrate material that is technically referred to as the substrate. The n-type material is required for the formation of the terminals called source and the drain. Here the P substrate impurities are doped with light concentration ‘whereas n-type is doped heavily. An n-channel MOSFET’s body is formed due to the p-substrate material that is technically referred to as the substrate, The n-type material is required for the formation of the terminals called source and the drain, Here the P substrate impurities are doped with light concentration whereas n-type is doped heavily. Drain D) Silicon di Oxide Source Substrate Gate (G) (SS) > n-doped region > substrate Metal contacts Source (8) Due to this a layer that is because of uncovered ions is formed below the layer of dielectric where the combinations of the holes with electrons occur. As the positive voltage applied gradually increases and crosses the minimum threshold the electrons which are minority carriers would be able to overcome the recombination with the holes and they form the channel between the two p-type materials. Further application of the positive voltage value at the drain leads to the flow of current through the transistor. The concentrations of the electrons are dependent on the potential applied. These concentrations of the electrons are responsible for the formation of the channel and the application of the voltage at the gate enhances the flow of the current. Hence it is termed as N- channel MOSFET of enhancement type. 3] PageN-Channel Depletion MOSF: The space that is present in between the terminals of the drain and the terminal source is composed of the impurities of n-type. A difference in potential applied at the drain and the terminal source leads to the flow of current through the region n. A voltage value with the negative polarity is applied at the gate. The electrons present in it get repelled and settle down at the dielectric layer. This is the reason due to which the depletion of the charge carriers occurs and results in the reduction of the overall conductance. In this situation after applying the same value of the voltage at the terminal drain still, the current value gets reduced. ‘Metallization Layer Source Drain D Dielectric layer 7 Diffused Channel P-type Substrate By making the variations at the depletion charge carriers the flow of current at the drain can be controlled. This is the reason it is defined as depletion MOSFET. Here the potential value at the drain is positive and the gate has a negative polarity and the terminal source remains at the potential value of zero. The difference of the values of potential is more at the terminals drain and the gate in comparison to the terminals of the source, and the gate, The depletion width will be evident more at the drain in comparison with the source, MOSFET Application: 1. MOSFET is used for some switching applications and in electronic devices. 2. Itis used in some amplifying circuits 3. Itis used in chopper circuits 4. MOSFET can be used as a high-frequency amplifier. 5. It can be used in voltage regulator circuits. 6. Itis used as an inverter in some of the electronics circuits. 4[ PageOperation of n-channel MOSFET: When VDS = 0 and VGS = 0, MOSFET remains in the cutoff region, and no current flows between source and drait ‘When VDS = 0 and 0 < VGS < Vt, the depletion region is formed. When VDS = 0 and VGS > Vt, the inversion region is formed and MOSFET will be ready to conduct. At this point of VDS is increased, current flows from drain to source and the IDS « VDSI. Increasing VGS further increases the electron density in the channel and also increases the conductivity between the source and drain, Observ: 1 2 4. 5. The operation of the MOSFET depends on the voltages and current applied across the Gate-Source and Drain-Source Terminal respectively. Based on the voltage bounds, three case states are possible for the MOSFET - a, Cutoff State b. Depletion State ©. Conduction State The plot of Drain Current (Id) versus Drain- Source Voltage (Vds) [0 to SV] with constant Gate-Source Voltage(Vgs = 1V) is nearly a straight line passing through the origin. ‘Whereas, when the Vgs = 4V, the nature of the plot is nearly a smooth ramp that becomes stable at 2.5V The plot of Drain Current (Id) versus Gate- Source Voltage (Vgs) [0 to 4V] with constant Drain-Source Voltage (Vds = OV) has an exponential nature with the current rising when Vgs = 1.5V S|Pagenmos characteristics vds d gnd 5 vgs g gnd3 ml dg gnd gnd nmos w=100u1= 10u ede vds 0.5 1 vgs 141 model nmos nmos control run plot ~i(vds) vende end To plot ID vs VGS graph: nmos characteristics vds x gnd 10 vgs g and 3 vdxd0 ml dg gnd gnd nmos w=100u1= 10u de vgs 050.5 model nmos nmos control run plot i(vd) ende end 6] Pace