What a MOSFET: ‘The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices. A MOSFET is either a core or integrated circuit ‘where itis designed and fabricated in a single chip because the device is available in very small sizes, The introduction of the MOSFET device has brought a change in the domain of switching in electronics. D tl 2 IS 7 s wares 1 crm —_ MOSFET SYMBOL OF MOSFET ‘The metal (or conductive silicon) gate terminal is separated from these by a nonconductive oxide layer. By applying voltage to the gate, it changes the electrical properties of the semiconductor underlying, either allowing or inhibiting the flow of electricity between the source and drain. ‘The functionality of MOSFET depends on the electrical variations happening in the channel ‘width along with the flow of carriers (cither holes or electrons), The charge carriers enter into the channel through the source terminal and exit via the drain. MOSFETs have characteristics similar to JFETs and additional characteristics that make them very useful. MOSFET StructureThere are 2 types of MOSFET’: + Depletion mode MOSFET (D-MOSFET) + Operates in Depletion mode the same way as a JFET when Vos <0 + Operates in Enhancement mode like E-MOSFET when Vos > 0 + Enhancement Mode MOSFET (E-MOSFET) + Operates only in Enhancement mode + Inss = 0 until Vos > Vr (threshold voltage) JFET Vs MOSFET + _JFETs can only be operated in the depletion mode whereas MOSFETs ean be operated in either depletion or in enhancement mode. + Ina JFET, if the gate is forward biased excess- carrier injunction occurs, and the gate current is substantial. Thus, channel conductance is enhanced to some degree due to excess carriers, but the device is never operated with gate forward biased because gate current is undesirable. + MOSFETs have input impedance much higher than that of JFETs. This is due to negligible small leakage current. + JPETs have characteristic curves flatter than those of MOSFETs indicates high drain resistance, + When JFET is operated with a reverse bias on the junction, the gate current Io, than it would be in a comparable MOSFET. + For the above reasons, and also because MOSFETs are somewhat ea ‘manufacture, they are more widely used than are the JFET. BASIC CONSTRUCTION OF N CHANNEL DEPLETION TYPE MOSFET: + Two highly doped N regions are diffused into a lightly doped p type substrate that may have an additional terminal connection called SS(Substrate) + The two highly doped n regions represent source and drain connected via an n- channel. The N-channel is formed by diffusion between the source and drain. The type of impurity for the channel is the same as for the source and drain. + Metal is deposited through the holes to provide drain and source terminals, and on the surface area between drain and source, a metal plate is deposited. This layer constitutes the gate. The n-channel is connected to the Gate (G) via a thin insulating layer of SiOz, larger jer to c thin layer of SiO2 dielectric is grown over the entire surface and holes are cut through the SiO. (silicon-dioxide) layer to make contact with the N-type blocks (Source and Drain).‘Metaization Layer source cate DRAIN 5 G > sion NY nN nS Diffused Chonnet P-type Substrate N-Channel DE-MOSFET Structure Case(a)Vs-0V and Vos=tve: Drain Current, | in mA, When Ves =0 and drain is made positive with respect to source current (in the form of free electrons) can flow between source and drain, even with zero gate potential and the MOSFET is said to be operating in Enhancement mode. In this mode of operation gate attracts the charge carriers from the P-substrate to the N-channel and thus reduces the channel resistance which increases the drain-current. ‘When Vos = negative with respect to the substrate, the gate repels some of the negative charge carriers out of the N-channel and attracts holes from the p type substrate. This initiates recombination of holes and electrons. This creates a depletion region in the channel and therefore reduces the number of free electrons in the n channel, increases the channel resistance and reduces the drain current. The more negative the gate, the less the drain current. In this mode of operation, the device is referred to as a depletion-mode MOSFET. Here too much negative gate voltage can pinch-off the channel, ‘The more positive the gate is made, more number of electrons from p substrate due to reverse leakage current and collisions between accelerating particles the more drain current flows. Drain characteris! Drain Source Voltage, Vps in voltsFor Vos exceeding zero the device operates in enhancement mode. ‘These drain curves again display an ohmic region, a constant-current sour and a cut-off region, e region For a specified drain-source voltage Vos, Vos (OFF) is the gate-source voltage at which drain current reduces to a certain specified negligibly small value, For Vas between Vos rr) (-ve value) and zero, the device operates in depletion mode. ‘TRANSFER CHARACTERISTICS: The transfer characteristics of N channel depletion MOSFET js similar to JFET These characteristics define the main relationship between the Ip and Vos for the fixed Vos value, For the positive Vos values, we can also get the Ip value. So due to that, the curve in the characteristics will extend to the right-hand side. Whenever the Vos value is positive, the no. of electrons within the channel will increase, When the VGS is positive then this region is the enhancement region. Similarly, when the VGS is negative then this region is known as the depletion region, The main relationship between the Ip and Vas can be expressed as 2 Ip = Iss] 1- Vos Ve Jp (mA) Depletion mode 6-5-4 -3-2\10 % Pe 0sP-CHANNEL MOSFET: Diffused Channel N-Type Substrate Structure of P-channel MOSFET © The p-channel Depletion mode MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed. TRANSFER & DRAIN CHARACTERISTICS OF P-CHANNEL MOSFET: Aipimay ENHANCEMENT MOSFET CHARACTERISTICS: N-CHANNEL ENHANCEMENT MOSFET CONSTRUCTION: © The main difference between the construction of DE-MOSFET and that of E- MOSFET, the E-MOSFET substrate extends all the way to the silicon dioxide (Si02) and no channels are doped between the source and the drain, + Two highly doped n regions are diffused into a lightly doped p substrate that may have an additionai terminal connection called SS. + The source and drain are taken out through metallic contacts to n doped regions, ‘These n-doped regions are not connected via an n-channel without an external voltage. + The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO:Channels are electrically induced in these MOSFETs, when a positive gate-source voltage Ves is applied to it Drain Source Gate ‘This MOSFET operates only in the enhancement mode and has no depletion mode. It operates with large positive gate voltage only. ‘When drain is applied with positive voltage with respect to source and no potential is applied to the gate , a very small drain current that is, reverse leakage current flows ‘When the gate is made positive with respect to the source and the substrate, negative (i.e. minority) charge carriers within the substrate ate attracted to the positive gate and accumulate close to the-surface of the substrate. As the gate voltage is increased, more and more electrons accumulate under the gate. Since these electrons cannot flow across the insulated layer of silicon dioxide to the gate, so they accumulate at the surface of the substrate just below the gate. When this occurs, a channel is induced by forming an inversion layer (N-type). Now a drain current start flowing through the channel DRAIN CHARACTERISTICS: ‘The Enhancement mode MOSFET only operates in the enhancement mode. VGS is always positive. IDS = 0 when VGS < VT ‘When VGS is greater than VT, the device tuns- on and the drain current ID is controlled by the gate voltage. As VGS increases above VT, the density of electrons in the induced channel inereases and ID increases. If VGS is kept constant and VDS is increased, then ID saturates, «apss) TThe almost vertical components of the curves correspond to the ohmic region, and the horizontal components correspond to the constant current region, ‘Thus E-MOSFET can be operated in cither of these regions ic. it can be used as a variable- voltage resistor (WR) or as a constant current source.TRANSFER CHARACTERISTICS: ‘+ The current Ipss at Vos <=0 is very small, When the Vos is made positive, the drain current In increases slowly at first, and then much more rapidly with an increase in Ves. The gate-source threshold voltage Vosr at which the drain current Inattains some defined small value, say 10 u A. ‘+ The equation for the transfer characteristic of E-MOSFETS is given as: k (Ves- V1)? Ten (Ves - V1)?P-CHANNEL ENHANCEMENT MODE MOSFETS: ‘The p-channel Enhancement mode MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed,