Course Title: Electrical Machines and Electronics

Course Code: EEE 2505

Credit Hours: 3.00D

Course Teacher
Md. Sohel Rana
Lecturer, Dept. of EEE, DUET, Gazipur

ecture-02

Semiconductor Diode

Department of Mechanical Engineering

Dhaka University of Engineering& Technology, Gazipur. 1

Semiconductor Diode

P - N Junction or Semiconductor Diode: If we join a piece of p-type material to a piece of n-type

material such that the crystal structure remain continous at the boundary, a p-n junction is said to be
formed. Such a p-n junction is called semiconductor diode or crystal diode.

The pn junction is of great importance because it is in effect the control element for
semiconductor devices

Anode (+) Cathode(-)

(a)
Anode Cathode

Fig.2: Symbol of Diode Fig.3: Terminal Identification of Diode

Fig.1: Schematic Representation
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Biasing of P-N Junction

Biasing: In electronics, the term bias refers to the use of d.c. voltage to establish certain operating
conditions for an electronic device.

In relation to a p-n junction and based on the voltage applied, there are following three biasing
conditions:

1. Zero Bias.
2. Forward Bias.
3. Reverse Bias.

1. Zero
Biasing or
Unbiased P-N Junction
Biasing of P-N Junction c o dd)
be unbiased. or Formation of P-N Junction: When there is no external voltage
Depieta udth dung unbiased
Condfro applied to the P-N
junction diode, it is said to

There is a
difference Negaie onPosae on
in the concentration of holes and electrons
The holes from
at the two sides of
a
the junetion
the p-side diffuse to the
junction
n-side and the electrons trom the n-side
dilfuse to the
Also, when
electron
an p-side. These give rise to
on, a
layer of positive diffuses from the n-side to the
a
diffusion current across
charge developed the n-sideP-Side, an ionised donor
is
on is left
of the
junction. behind on the
Similarly, when n-side, which is
negative charges
a hole goes from the
p-side immobile. As the
in the
p-side of the
to the n-side, an ionized process goes
This
junction acceptor is left behind on the
region of
positive charge and
p-side, resulting in the
negative charge on either side of the formation of a
layer of
Once p-n junctuon is termed as
field The electricjunction
formed and
is
the
field is a barrierdepletion layer created, depletion region.
to the free the
electrons in the ainusion o1 Iree
electrons
There exists a n-region. stops. The positive and negative
potential difference across the
depletion layer and is called charges set up an
electric
barrier potential
(V0).

4
 Biasing of P-N Junction cunta)
thus permitting current
barrier,
2. Forward Biasing: When an external d.c. voltage applied to the junction is in such a direction that it cancels the potential
low, it is called forward biasing

of the battery is connected to n-region

of the junction diode,
when positive terminal of ihe battery is connected to p-region and the negative terminal
it is said to be forward biasing. In forward biasing condition, the conventional current flows in the direction of arrowhead.

Narrow depletion region

r e e electrons
Holes

P-type N-type

Negalve ion Posidive ion

Battery
due potential barrier. Therefore, the resultant field is
Theapplied potential establishes an electric field which
forward acts against the field to

weakened and the barrier height is reduced at the junction.

completely eliminate the barrier.

As potential barrier voltage is very small (0.1 to 0.3 V), a small forward voltage is sufficient to

and a low resistance path is established tor

resistance becomes almost zero
O n c e the potential barrier is eliminated by the forward voltage, junction
current. 5
the entire circuit. Therefore, current flows in the circuit. This is called forward

Biasing of P-N Junction cm

the junction is in such a direction that potential barrier is increased, it is called

3. Reverse Biasing: When the external d.c. voltage applied to

reverse biasing.
it
& the negative terminal is connected to p-region of the p-n junction
>When the positive terminal of the battery is connected to n-region
conventional current flows opposite to arrowhead.
be biasing. In reverse bias condition, the
is said to reverse
Wide depletuon region

Holes Free electrons

PAy N-type

Negatne 1on P o s t e on

Battery
direction the field due to potential barrier.
establishes an electric 1ield which acts in the same
as
The applied reverse voltage and the barrier height is increased.
at the junction is strengthened
Therefore, the resultant field

T h e increased potential barrier prevents the flow ofcharge carriers across the junction.
ent1re circuit and hence the current does not flow. 6
Thus, a high resistance path is established for the

6
 mportant Terms
K n e e Voltage: It is the forward voltage at which the current through the junction starts to increase rapialy:

Breakdown Voltage: It is the minimum reverse voltage at which pn junction breaks down with sudden rise in revesc

current
without damage to
P e a k Inverse voltage (PIV): It is the maximum reverse voltage that can be applied to the p-n junction
due to excessive heat.
the junction. IT the reverse voltage across the junction exceeds its PIV, the junction may be destroyed

maximum level and further

R e v e r s e Saturation Current: The voltage or point at which the electric current reaches its
increase in voltage does not increase the electric current is called reverse saturation current
(mA) Breakdowi

Va (V)

Reverse saturation
CUret

KNEE
VOLTAGE

I.4 2.1 ,(voLTS)

le (mA)
SILICON

Figure: Knee voltage

Figure: Breakdown voltage 7

V-I Characteristics of Diodee

potential barrier at the
When the external voltage is zero, i.e. circuit is open, the
V I Characteristics of Unbiased p-n Junction Diode:
not permit current flow. Therefore, the circuit current is zero.
Junction does
Diode:
Forward V-I Characteristics of p-n Junetion
barrier is reduced.
With forward bias to the p-n junction, the potential
the diode allows only a small electric current which is
the silicon diode is less than the knee voltage,
If the external voltage applied on
considered negligible.
the
on the diode
reaches the knee voltage, the potential barrier is altogether eliminated and p-n
When the external voltage applied
electric current through it.
junction diode starts allowing large
conductor and a small increase in voltage increases the electric current rapidly.
the p-n junction behaves like
an ord1nary
A t this point
(mA)
(mA)
Narrow dEpeion egion

P-pe NpE

PosAAe
KNEE KNEE
NOLTAGE
VOLTAGE

oo7 1.4 2.1 V, (VOLTS) 0.3 0.6 0.9 12 V, (VOLTS)

GERMANIUM
SILICON
Bonery

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 1/2/2

Characteristics of Diode ont'd)

V-I
Diode:
Reverse V-I
Characteristies of p-n Junction
increased
barrier at the junction is
With reverse bias to the p-n junction, potential
the circuit. fiowever, in practice, a very small current
no current flows through
resistance becomes very high and practically saturation current (Is) and is due to the minority carriers
Therefore, the junction reverse
circuit with reverse bias which is called
the order of uA) flows in the
(of irom the n-type semiconductor
and the holes from the
the free electrons
voltage applied the p-n junction diode is increased,
on
region.
external reverse width of depletion
If the semiconductor are moved away from the p-n junction. This increases the
p-type
carrier current. However, it allows the
blocks the majority charge
biased p-n junction diode completely towards the junction.
The wide depletion region of reverse all the minority carriers
on the diode pushes
current and a small voltage applied
minority charge carrier
become high enough to knock out
(minority carriers) may
if voltage is increased continuously, the kinetic energy of electrons characterised by a Sudden rise of reverse current and a
Now, reverse
occurs,
electrons from the semiconductor atoms.
At this stage breakdown of the junction
This may destroy the junction permanentiy.
sudden fall of the resistance of barrier region.
Breakdovn
vollago
Wide deplelrorn regs0n

ree olecirons Va (V
Nype

Roverso saturaion
CuTen

Negathe on PinAN en

Battory

V-I Characteristics of Diode (Cont d)

+I (mA)
Forward
Current

Forward
Bias
Reverse knee'
Breakdown
Reverse Voltage
Voltage
V
V
Forward Voltage
50mA
Germanium 0.3v Germanium
Zener -20mA Silicon 0.7v Silicon
Breakdown
or Avalanche Reverse
Region Bias

-I (uA Rever
Currentse
10

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 Resistance of Crystal Diode
1. Formard Resistance: The resistance offered by the diode to forward bias is known as forward resistance.
Forward resistance is
oftwo types, namely: (a) d.c. forward resistance and (b) a.c. forward resistance
(a) d.c. forward resistane: It is the opposition offered by the diode to the direct
current. It is measured by the ratio of d.e. voltage across the diode to the resulting
d.c. current through it.

O
de forard res1stance. R, =
O8

(b) a.c. forward resistance: It is the opposition offered by the diode to the changing
forward curent. It is measured by the ratio of change in voltage across diode to the
resulting change in current through it.

ac
fomard res1stance. r, Change in voltage across diode
Comresponding change in current through diode

ac iforuard res1stauce. r, =Change in forward voltage Oa

Change in forward curent

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Resistance of Crystal Diode cnt d)

2. Reverse resistance: The resistance offered by the diode to the reverse bias is known as reverse resistance.

I t can be d.c. reverse resistance or a.c. reverse resistance depending upon whether the reverse bias is
direct or changing voltage.

Ideally, the reverse resistance of a diode is infinite.

However, in practice, the reverse resistance is very large compared to the forward resistance.

I n germanium diodes, the ratio of reverse to forward resistance is 40000:1 while for silicon this ratio is
1000000:1.

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 Equivalent Circuit of Crystal Diode
Approximate Equivsalent circuit: When the forward voltage Vy is applied across a diode, it will not
conduct till the potential barrier Vo at the junction is overcome.
When the forward voltage exceeds the potential barrier voltage, the diode starts conducting.

The forward current 1,flowing through the diode causes a voltage drop in its internal resistance r
Therefore, approximate equivalent circuit for a crystal diode is a switch in series with a battery V

and internal resistance r

DEAL DIODE
DIODE
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13

Equivalent Circuit of Crystal Diode co

Simplified Equivalent circuit: For most applications, the internal resistance rf ofthe crystal diode can be
ignored in comparison to other elements in the equivalent circuit. The equivalent circuit then reduces to
the one shown in Figure.

Vo

IDEAL DIODE
VF

*Ideal diode model: An ideal diode is one which behaves as a perfect conductor when forward biased and
as a perfect insulator when reverse biased. Obviously, in such a hypothetical situation, forward resistance
rf-0 and potential barrier V0 is considered negligible. It may be mentioned here that although ideal diode
is never found in practice, yet diode circuit analysis is made on this basis.

IDEAL DIODE 0
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Mathematical Problems
or reverse
biased.
forward
circuit of Figure, find whether the diodes
are
1. In each diode ww
www

D
()

w.

ww
A D: A
()
(iii)

15

15

Mathematical Problems Cont'dy

Assume the diode to be ideal.
2. Find the current through the diode in the circuit shown in Figure.
50 A
ww
R
'= 10 V 52 R

l6

16
 Mathematical Problems nt'd)
and R=2.2 ka
diode configuration of Figure, determine Vn, Va, and Ip. Take E-8 v

3. For the series

17

17

Mathematical Problems
of silicon and forward
through 48 A resistor in the circuit shown in Fig. Assume the diodes to be
4. Calculate the current
resistance of each diode is 1 2.

D
D,
48
w
10V

D, A D

()

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 Mathematical Probiems
5. Determine the current I in the circuit shown in Figure. Assume the diodes to be of silicon and forward resistance of diodes
to be zero.

ww
E 24 V
D
, =4V

19

19

Mathematical Problems
6. Find the voltage V, in the circuit shown in Figure. Use simplified model. 20 V

Si Ge

()

20

20
 Mathematical Problems ntd
7. Find Vg and Ip in the network shown in Figure. Use simplified model.

2 k
+10V
fsi
ww

2k

21

21

Mathematical Problems Cont'ay

out the
8. Determine the currents I, Ih and I, for the network shown in Figure. Use simplified model for the diodes. Also find
value of VRI,VDI and VD2 D 3.3 kS2

E= 20V
D

w
5.6 kS2

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Mathematical Problems nt'd)

9. Determine Vot Vo2T and current through the 1k ohm resistance for the following network.

0.47 ka

20 V Si Si

23

23

Mathematical Problems ont'd)

resistance for the following network.
10. Determine Voi. Vo2, I and current through the lk ohm

1 kQ 0.47 k2

Si Ge
20 V

24

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11. Determine Vo. l, Ipi, and

Mathematical Problems cont'd
Ip2 for the
parallel diode configuration of
Figure.
0.33 k2
W
R
10V DSi DSi

25

25

Thank You

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