CSE350 Practice Problem Solution Week-8
CSE350 Practice Problem Solution Week-8
Question 1
For the circuit below (enhancement Load Inverter), assume these parameters,
MOSFET process parameter for ML is K’L= 5 μA/V2, (W/L)L = 2 and threshold
voltage, VTNL = 0.7V. MOSFET process parameter for MX is K’D= 25 μA/V2,
(W/L)D = 4 and threshold voltage, VTND = 0.7V.
(a) Assume VI = 5 V. Find value of Vo in volt. Find ID and Power Dissipation. Verify the operating mode of ML and MX.
(b) What should be the value of VI if we want ML to operate in the triode region?
Solution:
Question 2
For the circuit below (Depletion Load NOR), assume these parameters,
MOSFET process parameter for ML is K’L= 50 μA/V2, (W/L)L = 2 and threshold
voltage, VTNL = −0.6V. MOSFET process parameter for both MX and MY is K’D= 33.25
μA/V2, (W/L)D = 4 and threshold voltage, VTND = 0.4V.
(a) Assume VX = VY = 1.8 V. Find value of Vo in volt. Find IDX, IDY, IDL and Power Dissipation. Verify the operating mode of
ML.
(b) Now, assume VX = VY = 0.1 V. Find value of Vo, IDX, IDY, IDL.
(c) What should be the operating mode of MX and MY if VX = 1.8V and VY = 0 V? (Use logical reasoning, no need for
calculation)
Question 3
The enhancement-load NMOS NOR gate in the figure is biased at VDD = 5.5 V. The transistor
parameters are Kn = 0.2mA/V2 , VTN1 = 0.4 V, VTN2 = 1 V, VTN L = 0.9 V.
Solution:
Question 4
(a) Design a static CMOS logic circuit that implements the logic function Y= (AB+C)D
(b) Design a static CMOS logic circuit that implements the logic function Y= (A+B)CD
(c) Design a static CMOS logic circuit that implements the logic function Y= F(AB+C(D+E))
Solution:
Question 5
Design a CMOS logic circuit to implement the given compound gate in Figure below. First derive
the logical expression of output Y and then design the CMOS network.
Solution: