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Inchange - Semiconductor 2SC5297 Datasheet

Transistor de salida horizontal para CRT tv

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24 views3 pages

Inchange - Semiconductor 2SC5297 Datasheet

Transistor de salida horizontal para CRT tv

Uploaded by

josuearguellorojas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC5297

DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1500V(Min)
·High Switching Speed
·High Reliability

APPLICATIONS
·Ultrahigh-definition CRT display horizontal deflection
output applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 1500 V

VCEO Collector-Emitter Voltage 800 V

VEBO Emitter-Base Voltage 6 V

IC Collector Current-Continuous 8 A

ICP Collector Current-Peak 16 A

Collector Power Dissipation


3.0
@ Ta=25℃
PC W
Collector Power Dissipation
60
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC5297

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 800 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 5.0 V

VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.5 V

ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA

ICEO Collector Cutoff Current VCE= 1500V ; RBE= 0 1.0 mA

IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1.0 mA

hFE-1 DC current gain IC= 1A ; VCE= 5V 20 30

hFE-2 DC current gain IC= 5A ; VCE= 5V 4 7

Switching times

tstg Storage Time 3.0 μs


IC= 4A , IB1= 0.8A; IB2= -1.6A
RL= 50Ω; VCC= 200V
tf Fall Time 0.2 μs

isc Website：www.iscsemi.cn 2
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC5297

isc Website：www.iscsemi.cn

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