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For =180o, homogeneous nucleation
For island-layer growth
Gvis –ve and is +ve
Single Crystalline, amorphous or polycrystalline f>0, film is in tension f<0, film is in compression EVAPORATION The equilibrium vapor pressure of an element, Pe, is given by
For compounds, things are more complex.
Laser Ablation
• Excimer KrF, lambda = 248 nm; t = 25 ns; Ep = 100 mJ
• Laser Nd:YAG, lambda = 1064, 532, 355 nm; t = 10 ns; Ep = 550 mJ The advantages: - Easy and Versatile (external source) - Target of any material - High deposition rate (~ 0.1 nm/pulse) - Multi-layer deposition - Stoichiometric deposition congruent (the target stoichiometry is transferred) - High energy of the produced particles (even more than 10 eV) - Possible temperatures lower than with other techniques - Possible to correct the stoichiometry through reaction gases MOLECULAR BEAM EPITAXY (MBE) Main attributes of MBE DC and RF Sputtering Differences between evaporation and sputtering Chemical Vapor Deposition (CVD) Atomic Layer Deposition (ALD) SELF-ASSEMBLED MONOLAYERS
Fig. 5.19. A typical self-assembling surfactant molecule consisting
of three parts: surface group, alkyl or derivatized alkyl group, and surface-active headgroup. Fig. 5.21. Alkylsilanes with more than one chloride or alkoxy groups, surface polymerization capable of forming silicon-oxygen- silicon bonds between adjacent molecules as commonly invoked deliberately by the addition of moisture. LANGMUIR-BLODGETT METHOD Fig. 5.23. Schematic showing the formation of Langmuir films, which denote the molecular films at the water-air interface, a drop of a dilute solution of an amphiphilic molecule in a volatile solvent, such as CHC13, is spread on the water-air interface of a trough. Fig. 5.24. The more conventional vertical deposition method for the formation of LB films on substrates. Fig. 5.26. Schaefer’s method useful for the deposition of very rigid films, in which, a compressed monolayer is first formed at the water and air interface, a flat substrate is placed horizontally on the monolayer film. ELECTROCHEMICAL DEPOSITION SOL-GEL DEPOSITION DIP COATING OF A SOL
where is the viscosity, Uo
the withdrawal speed, r the density of the coating sol, and cl is a constant. SPIN COATING OF A SOL
where rA is the mass of volatile solvent per unit
volume, rAo its initial volume, the angular velocity, h the liquid viscosity, and e the evaporation rate, which is related to the mass transfer coefficient.