TIL3010
TIL3010
OPTOCOUPLERS/OPTOISOLATORS
SOES027A – DECEMBER 1987 – REVISED APRIL 1998
D
(TOP VIEW)
Gallium-Arsenide-Diode Infrared Source
and Optically-Coupled Silicon Triac Driver ANODE 1 6 MAIN TERM
(Bilateral Switch)
CATHODE 2 5 TRIAC SUB†
D UL Recognized . . . File Number E65085 NC 3 4 MAIN TERM
D High Isolation . . . 3535 V peak
D Output Driver Designed for 115 Vac † Do not connect this terminal
D Standard 6-Pin Plastic DIP NC – No internal connection
PRODUCTION DATA information is current as of publication date. Copyright 1998, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1 6
Vin = 30 V rms
4 RL
2
Input 10 kΩ
2N3904
(see Note A)
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input set at 0 volts. The frequency of Vin is increased
until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the following formula:
ń + 2 Ǹ2 p f Vin
dv dt
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-volt pulses to the input and
increasing the frequency of Vin until the phototriac remains on (latches) after the input pulse has ceased. With no further input
pulses, the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs
can then be used to calculate the dv/dt(c) according to the formula shown above.
TYPICAL CHARACTERISTICS
IF = 20 mA
600
1.3 f = 60 Hz
1.1 0
– 200
1
– 400
0.9
– 600
0.8 – 800
– 50 – 25 0 25 50 75 100 –3 –2 –1 0 1 2 3
TA – Free-Air Temperature – °C VTM – Peak On-State Voltage – V
Figure 2 Figure 3
11 0.18
10 0.16
9 0.14
Commutating
8 0.12
7 0.10
6 0.08
dv/dt
5 0.06
dv/dt(c)
4 0.04
0 0.4 0.8 1.2 1.6 2
RL – Load Resistance – kΩ
Figure 4
TYPICAL CHARACTERISTICS
OFF-STATE dv/dt AND COMMUTATING dv/dt
vs
FREE-AIR TEMPERATURE
12 0.24
dv/dt
dv/dt(c)
10 See Figure 1 0.2
Commutating dv/dt – V/ µ s
Off-State dv/dt – V/µ s
8 0.16
6 0.12
4 0.08
RL = 510 Ω
RL = 2 kΩ
2 0.04
0 0
25 50 75 100
TA – Free-Air Temperature – °C
Figure 5
RL = 1 kΩ
TA = 25°C
TA = 25°C
400
dv/dt = 2 √ 2πf Vin
Vin – RMS Applied Voltage – V
See Figure 1
100 2
40
10 1
1 0
100 400 1k 4k 10 k 40 k 100 k 0.01 0.1 1 10 100
f – Frequency – Hz tw – Pulse Duration – ms
Figure 6 Figure 7
APPLICATION INFORMATION
TIL3009, TIL3012 RL
Rin 180 Ω
1 6
VCC
120 V, 60 Hz
RL
2 4
TIL3009, TIL3012 ZL
Rin 180 Ω 2.4 kΩ
1 6
VCC
0.1 µF 120 V, 60 Hz
2 4
IGT ≤ 15 mA
Figure 9. Inductive Load With Sensitive-Gate Traic
TIL3009, TIL3012 ZL
Rin 180 Ω 1.2 kΩ
1 6
VCC
0.2 µF 120 V, 60 Hz
2 4
MECHANICAL INFORMATION
9,40 (0.370)
8,38 (0.330)
6 5 4
Index Dot
CL CL (see Note B)
7,62 (0.300) T.P.
(see Note A)
1 2 3
6,61 (0.260)
6,09 (0.240)
1,78 (0.070) MAX
6 Places
5,46 (0.215)
2,92 (0.115)
Seating Plane
1,78 (0.070) 1,01 (0.040) MIN
105° 0,51 (0.020)
90°
2,29 (0.090) 0,534 (0.021)
3,81(0.150)
1,27 (0.050) 0,381 (0.015)
0°– 15° 3,17 (0.125)
4 Places 6 Places
2,54 (0.100) T.P.
0,25 (0.010) NOM (see Note A)
NOTES: A. Leads are within 0,13 mm (0.005 inch) radius of true position (T.P.) with maximum material condition and unit installed.
B. Pin 1 identified by index dot.
C. The dimensions given fall within JEDEC MO-001 AM dimensions.
D. All linear dimensions are given in millimeters and parenthetically given in inches.
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