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RF and Microwave-OrT

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25 views4 pages

RF and Microwave-OrT

Uploaded by

Pranshu Bhusari
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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ARDR/ORT/2KTT – 12902/12982

B. E. Seventh Semester (Electronics and Telecommunication


Engineering)/BEET_ 14-15 – Rev_SOE_ET -101 Examination

Course Code : ET 1401/ET 401 Course Name : RF and Microwave

Time : 2 Hours ] [ Max. Marks : 40


Instructions to Candidates :—
(1) Attempt any Four questions out of Six.
(2) All questions carry Ten marks.
(3) Assume suitable data wherever necessary.
(4) Illustrate your answers wherever necessary with the help of neat sketches.
(5) Use of non – programmable calculator is permitted.

1. (A) (A1) Derive the mathematical expression for optimum specing between
buncher and catcher cavities in two cavity Klystron. 7(CO1)
(A2) What is mechanical tuning and electronic tuning in a reflex Klystron?
3(CO1)

OR

(B) (B1) Derive expression for output power and efficiency of reflex klystron.
Show that maximum efficiency is 22.7%. 7(CO1)
(B2) What are re–entrant cavities ? Why are they used ?
3(CO1)

2. (A) (A1) Derive expression for Hull cut–off magnetic flux density for
Cylindrical magnetron. 7(CO1)
(A2) A BWO oscillates at 1000 Mhz. The number of folds are 20.
Electron takes 0.2 nsec to travel from one gap to another along
the folded line whose distance is 10 cms. Find the velocity
of wave in the rectangular waveguide assuming dominant mode.
3(CO1)

ARDR/ORT/2KTT – 12902/12982 Contd.


OR

(B) (B1) Derive expression for Hull cut–off voltage for Parallel Plate
magnetron. 7(CO1)
(B2) O–type TWT operates at 8GHz. The SWS has a pitch angle
of 4.4 degrees and attenuation constant is 2 neper/m. Determine
the propagation constant of the travelling wave. 3(CO1)

3. (A) (A1) Derive the S–parameters of a two port network with port 2
terminated in normalized impedance Z2. 7(CO2)
(A2) A component of normalized admittance Y is placed across a
microwave junction as shown below. Assuming characteristic
impedance of unity, obtain its s–matrix.

3(CO2)

OR

(B) (B1) Derive a, b, c, d parameters for voltage current transmission


matrix. Also prove that its determinant is unity. 7(CO2)
(B2) The s–matrix variables measured at a port arm are
a = 5–j3 and b = 2+j5. The normalized impedance is 50Ω. Calculate
voltage and current at that port. 3(CO2)

4. (A) (A1) State and Prove 4 port theorem. 7(CO3)


(A2) A matched isolator has insertion loss of 0.5 dB and isolation
30 dB. Determine its scattering matrix if the isolated ports are
perfectly matched to the junction. 3(CO3)

ARDR/ORT/2KTT – 12902/12982 2 Contd.


OR

(B) (B1) Prove that it is impossible to construct a perfectly matched lossless,


reciprocal three–port junction. 7(CO3)
(B2) If the incident power of a 10 dB directional coupler is 250 mW;
calculate output power in the main arm and auxillary arm.
3(CO3)

5. (A) (A1) Describe the Bolometer method for the measurement of microwave
power. 7(CO4)
(A2) Location of two successive minima points of slotted line are found
at 4.45 cms and 7.36 cms. What is the incident frequency for
dominant mode ? 3(CO4)

OR

(B) (B1) Explain double minima method for VSWR measurement.


7(CO4)
(B2) Calculate power radiated by a transmission line having following
parameter. mass = 200 gms, specific heat = 1 calories/gm 0C,
T1 = 35 0C, T2 = 52 0C. 3(CO4)

6. (A) (A1) With the help of two valley model theory, explain how Gunn
diode exhibits negative resistance. 7(CO5)
(A2) An IMPATT diode has the following parameters :
Carriers drift velocity: vd = 2 x (107)
Drift–region length: L = 6 µm
Maximum operating voltage: V0 max = 100 V
Maximum operating current: 10 max = 200 mA
Efficiency: = 15%

ARDR/ORT/2KTT – 12902/12982 3 Contd.


Breakdown Voltage: Vbd = 90 V
Compute :
(a) The maximum CW output power in watts;
(b) The resonant frequency in gigahertz. 3(CO5)

OR

(B) (B1) Discuss construction of Crystal diode with neat diagram.


7(CO5)
(B2) Determine Conductivity of an n–type GaAs Gunn Diode with Electron
density n = 1018 cm –3. Electron density at lower valley
n1 = 1010 cm –3, Electron density at upper valley nu = 108 cm –3,
Temperature T = 300 0K. 3(CO5)

ARDR/ORT/2KTT – 12902/12982 4

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