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cknowledgement
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energy band structure of the semiconductors is similar to the
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of the forbidden energy
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Semiconductors:-: Theory and
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some electrons to jump the small (  1 ev) energy gap and go
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A semiconductor atom needs energy of the order of 1.1ev to 4 pages

shake off the valence Upload your documents

electron. Thisto download.
energy becomes available No ratings yet
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to it even at room temperature. Due to thermal agitation of
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crystal structure, electrons from a few covalent bonds come
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This hole can be filled by some other electron in a covalent
bond. As an electron from covalent bond moves to fill the
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hole, the hole is created in the covalent bond from which the
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electron has moved. Since the direction of movement of the Rockwool Thermalrock S (Slab) :

hole is opposite to that of the negative electron, a hole General Product Information

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holes wandering in random directions. These electrons and Pengukuran Berapa Pantas
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holes are called intrinsic carriers. Reaction
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As the crystal is neutral, the number of free electrons will be 100% (4)
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equal to the number of holes. In an intrinsic semiconductor, if Homework Exercises Final
ne denotes the electron number density in conduction band, Revised 08 Oct 2015 PDF

nh the hole number density in valence band and ni the number 118 pages

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(about 1 to 106 parts of the semi-conductor). The process of DGT Brochure

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When an impurity atom belonging to group V of the periodic
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impurity. The electrons so set free in the silicon crystal are ATAGO Digital Conductivity DEC-
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have a large number of free electrons (majority carriers) and No ratings yet
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have a small number of holes (minority carriers). Piping

In terms of valence and conduction band one can think that

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semiconductor. If ni is the number density of electrons is 8 pages
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p type semiconductor
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If a trivalent impurity like indium is added in pure semi-
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conductor, the impurity atom can provide only three valence
electrons for covalent bond Start yourformation.
30 day free trial Thus a gap is left in
one of the covalent bonds.
The gap acts as a hole that tends to accept electrons. As the
trivalent impurity atoms accept electrons from the silicon
crystal, it is called acceptor impurity. The holes so created
are extrinsic carriers and the p-type Si-crystal so obtained is
called p-type extrinsic semiconductor. Again, as the pure Si-
crystal also possesses a few electrons and holes, therefore, the
p-type si-crystal will have a large number of holes (majority
carriers) and a small number of electrons (minority carriers).
It terms of valence and conduction band one can think that all
such holes create an accepter energy level just above the top
of the valance band as shown in figure. The electrons from
valence band can raise themselves to the accepter energy
level by absorbing thermal energy at room temperature and in
turn create holes in the valence band.
Number density of valence band holes (nh) in p-type
semiconductor is approximately equal to that of the acceptor
atoms (Na) and is very large as compared to the number
density of conduction band electrons (ne). Thus,
nh Na > > ne

electrical resistivity of semiconductors

Consider a block of semiconductor of length l1 area of cross-

section A and having number density of electrons and holes as

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ne and nh respectively. Suppose that on applying a potential
difference, say V, aUpload your documents
current I flows to download.
through it as shown in
figure. The electron current (Ic) and the hole current (Ih)
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constitute the current I flowing through the semi conductor
i.e. OR

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(i)
It ne is the number density of conduction band electrons in the
semiconductor and ve, the driftStart your 30of
velocity dayelectrons
free trial then
Ie = eneAve
Similarly, the hole current, Ih = enhAvh
From (i) I = eneAve + enhAvh
I = eA(neve + nhvh) (ii)
If  is the resistivity of the material of the semiconductor, then
the resistance offered by the semiconductor to the flow of current is given by :
R =  l/A (iii)
Since V = RI, from equation (ii) and (iii) we have
V = RI =  l/A eA (neve + nh vh)
V =  le(neve + nhvh) (iv)
If E is the electric field set up across the semiconductor, then:
E = V/l (v)
from equation (iv) and (v), we have
E = e (neve + nhvh)
1/ = e (ne ve/E + nh vh/E)
On applying electric field, the drift velocity acquired by the electrons (or
holes) per unit strength of electric field is called mobility of electrons (or
holes). Therefore,
mobility of electrons and holes is given by :
e = ve/E and h = vh/E
1/ = e(ne e + nh h) (vi)
Also, = 1/ is called conductivity of the material of semiconductor
 = e (ne e + nh h) (vii)

The relation (vi) and (vii) show that the conductivity and
resistivity of a semiconductor depend upon the electron and hole number
densities and their mobilities. As ne and nh increases with rise in temperature,
therefore, conductivity of semiconductor increases with rise in temperature
and resistivity decreases with rise in temperature.

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