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Ae468 Nano Electronics

The document outlines the course AE468 on Nano Electronics, which aims to impart fundamental concepts of nanotechnology and its applications. It includes a detailed syllabus covering topics such as fabrication methods, characterization tools, and various nanoelectronic devices. The course also specifies textbooks, reference materials, and an examination pattern for assessment.

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RAHNA KHAN
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19 views2 pages

Ae468 Nano Electronics

The document outlines the course AE468 on Nano Electronics, which aims to impart fundamental concepts of nanotechnology and its applications. It includes a detailed syllabus covering topics such as fabrication methods, characterization tools, and various nanoelectronic devices. The course also specifies textbooks, reference materials, and an examination pattern for assessment.

Uploaded by

RAHNA KHAN
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Course Course name L-T-P-Credits Year of


code Introduction
AE468 NANO ELECTRONICS 3-0-0-3 2016
Course objectives
 To impart the basic concepts of nanotechnology
 To develop understanding about application of nanomaterials.
Syllabus
Introduction to nanotechnology and Nano electronics- fabrication of nano materials-
Introduction to characterization tools of nano materials- basic properties of 2d semiconductor
nanostructures- The concept of super lattices Kronig - Penney model of super lattice-
Nanoelectonic devices and systems- Nanocomposites- nanofillers
Expected outcome
 At the end of the semester students will have good idea regarding nano electronics
and their various applications.
Text books
1. J.M. Martinez-Duart,R.J. Martin Palma,F. Agulle Rueda “Nanotechnology for
Microelectronics and optoelectronics” , Elsevier, 2006.
2. W.R. Fahrner,”Nanotechnology and Nanoelctronics”, Springer, 2005
Reference books
1. Chattopadhyay,Banerjee, “Introduction to Nanoscience & Technology”,PHI 2009
2. Diwanand and Bharadwaj,”Nanoelectronics”,Pentagon Press Delhi 2006
3. Goser, P. Glosekotter, J. Dienstuhl, “Nanoelectronics and nanosystems”, Springer
2004.
4. Poole, “Introduction to Nanotechnology “,John Wiley 2006
5. Pulikel M. Ajayan,”Nanocomposite science and technology”, Wiley-VCH 2005
6. Supriyo Dutta, “Quantum Transport- Atom to transistor”, Cambridge University
Press, 2005.
7. T. Pradeep, “Nano the Essentials”, TMH, 2007.
Course Plan
Semester
Module Contents Hours Exam
Marks
I Introduction to nanotechnology and Nano electronics, 7 15%
Impacts, Limitations of conventional microelectronics.
Introduction to methods of fabrication of nano materials-
different approaches. fabrication of nano-layers -Physical
Vapor Deposition, Chemical Vapor Deposition, Epitaxy,
Molecular Beam Epitaxy, Ion Implantation, Formation of
Silicon Dioxide. Fabrication of nanoparticle- grinding with
iron balls, laser ablation, reduction methods, sol gel, self-
assembly.
II Introduction to characterization tools of nano materials- - 6 15%
principle of operation of STM, AFM, SEM, TEM, XRD, PL
& UV instruments. Mesoscopic Physics and
Nanotechnologies - trends in Microelectronics and
Optoelectronics, characteristic lengths in mesoscopic
systems, Quantum mechanical coherence, Quantum
wells,wires and dots, Density of states and dimensionality .
FIRST INTERNAL EXAMINATION
III The physics of low dimensional structures - basic properties 7 15%

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of two dimensional semiconductor nanostructures, square


quantum wells of finite depth, parabolic and triangular
quantum wells, quantum wires and quantum dots.
Semiconductor quantum nanostructures and super lattices –
MOSFET structures, Heterojunctions, Quantum wells,
modulation doped quantum wells, multiple quantum wells.
IV The concept of super lattices Kronig - Penney model of super 7 15%
lattice. Transport of charge in Nanostructures under Electric
field - parallel transport, perpendicular transport, quantum
transport in nanostructures. Transport of charge in magnetic
field and quantum Hall effect - Effect of magnetic field on a
crystal, the Aharonov-Bohm effect, the Shubnikov-de Hass
effect, the quantum Hall effect.
SECOND INTERNAL EXAMINATION
V Nanoelectonic devices and systems - MODFETS, 8 20%
heterojunction bipolar transistors, resonant tunnel effect,
RTD, RTT,hot electron transistors, Coulomb blockade effect
and single electron transistor, CNT transistors,
heterostructure semiconductor laser, quantum well laser,
quantum dot LED, quantum dot laser, vertical cavity surface
emitting laser, quantum well optical modulator, quantum well
sub band photo detectors, Infrared detector, Nano switches,
principle of NEMS..
VI Nanocomposites, nanofillers, high performance materials, 7 20%
polymer nanocomposites, nanoclays, nanowires, nanotubes,
nanoclusters etc. Smart materials, self-assembly of materials,
safety issues with nanoscale powders.
END SEMESTER EXAMINATION
QUESTION PAPER PATTERN:

Maximum Marks:100 Exam Duration: 3 Hours

Part A

Answer any two out of three questions uniformly covering Modules 1 and 2 together. Each
question carries 15 marks and may have not more than four sub divisions.
(15 x 2 = 30 marks)
Part B

Answer any two out of three questions uniformly covering Modules 3 and 4 together. Each
question carries 15 marks and may have not more than four sub divisions.

(15 x 2 = 30 marks)

Part C

Answer any two out of three questions uniformly covering Modules 5 and 6 together. Each
question carries 15 marks and may have not more than four sub divisions.
(20 x 2 = 40 marks)

Credits :- APJ KTU | Fair Use Policy

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