Tma, Mphe-025 (2024-25)
Tma, Mphe-025 (2024-25)
ASSIGNMENT BOOKLET
MATERIALS SCIENCE
School of Sciences
Indira Gandhi National Open University
Maidan Garhi, New Delhi-110068
(2024-25)
Dear Student,
Please read the section on assignments in the Programme Guide for M.Sc. (Physics). A
weightage of 30 per cent, as you are aware, has been earmarked for continuous evaluation,
which would consist of one tutor-marked assignment for this course. The assignment is in
this booklet. The total marks for this assignment is 100, of which 40 marks are needed to pass
it.
Instructions for Formatting Your Assignments
Before attempting the assignment please read the following instructions carefully:
1) On top of the first page of your answer sheet, please write the details exactly in the following
format:
2
Tutor Marked Assignment
MATERIALS SCIENCE
Course Code: MPHE-025
Assignment Code: MPHE-025/TMA/2024-25
Max. Marks: 100
Note: Attempt all questions. The marks for each question are indicated against it.
PART A
1. a) Explain with diagram, how many identical points are created by a 3 roto-inversion
operation. Among 3-fold rotation and 3 roto-inversion operation, which one has
higher order? Why? (3+1+1)
b) What are glassy alloys? Discuss their mechanical properties vis-à-vis normal metal
alloys and ceramic oxide materials. State any four technological applications of
glassy alloys. (2+2+1)
c) What are solid solutions? Explain the rules (Hume-Rothery) governing the
formation of substitutional solid solutions. (2+3)
2. a) Explain with diagram the float zone method of crystal growth. State its advantages
over the Czochralski method. (4+1)
b) Calculate the mass of phosphorus required to make a silicon crystal with 1017 cm−3
doping density, if the initial melt load of silicon is 50 kg. The density of silicon in the melt
is 2.5 g cm−3 and phosphorus has an atomic weight of 30.97u. Assume that the
segregation coefficient k0=0.35 is constant throughout the growth process. (5)
c) Describe the importance and cost advantages of powder metallurgy in materials
processing. (5)
d) What is epitaxial growth? What are the advantages of MBE growth technique? State its
applications. (2+2+1)
3. a) Explain with appropriate diagrams various point defects observed in solid crystals. (6)
b) Calculate the equilibrium concentration of vacancies in a copper crystal at 1000 K.
Given that melting point of copper is 1083C and enthalpy of vacancy formation in
copper is 120 kJ per mole. (4)
c) What is dislocation defect? Discuss its role in the crystal growth. (2+3)
PART B
4. a) Based on the diffusion mechanisms involved explain why carbon atom diffusion is
faster than nickel atom diffusion in iron lattice. (5)
b) What are eutectic phase diagrams? With the help of a schematic diagram for a
binary system explain the significance of eutectic point and liquidus, solidus &
solvus curves. (1+4)
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c) Explain the Avrami and Johnson-Mehl models of computing phase transformation
rates based on their assumptions and growth mechanisms. (5)
5. a) Draw a typical stress-strain curve of a material. Define various mechanical
strengths and indicate corresponding deformation regions on this plot. (5)
b) What is meant by “thermal shock” experienced by the materials? How can it be
reduced? State the expression for thermal shock resistance (TRS) explaining all
the terms involved. (1+2+2)
c) Define corrosion in case of materials. Discuss the five major factors affecting /
promoting corrosion process. (5)
6. a) Explain the phenomena of Colossal Magnetoresistance (CMR) and Giant
Magnetoresistance (GMR). Give examples of materials where these effects are
observed. (2+2+1)
b) What are shape memory materials? Explain the phase transition hysteresis
observed in NiTi alloy giving rise to shape memory phenomenon. Discuss any two
applications of shape memory materials. (1+2+2)
c) What is graphene? Describe the bonding in graphene. Explain the band structure
of graphene on E-k diagram. (1+2+2)
d) What is organic electronics? Explain the working of an organic diode. (1+4)
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