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Rueda Domínguez Carlos Daniel 2220422, Bravo Rodríguez Santiago Alexander

Lab #5: Meeting the Bipolar
2224734. Junction Transistor
(BJT)
a) Theorical Analysis:

In a BJT there are three regions within which it can work,

I. INTRODUCTION which are:

I n this laboratory we had the first contact with the Bipolar

 OFF: there is now current flow in this region, the
voltage VBE will be less than zero, and VCB positive.
Junction Transistor (BJT) with the aim of understanding and
analyzing its behavior in different configurations, from the  Saturation: all currents are positive, the voltage V BE
most basic to some more interesting ones such as the Current is greater than zero and VCB is lower than zero, and it
Mirror, in which voltage and current values were measured to is important to highlight that VCE it must be between
understand how a circuit with BJTs behaves, these parameters 0.1 – 0.3 [V].
were also compared with those obtained in the simulation.
 Active: it is the most important mode of operation,
the voltages VBE and VCB must be positive, as well as
II. JUSTIFICATION all the emitter, base and collector currents.

Why could this lab be useful? All these regions were described for the case of an NPN
transistor, if the transistor is PNP the same conditions must be
The conscious development of this laboratory is important to met but with the corresponding relationships, for example:
strengthen some aspects:
VBE => VEB. And so on for each one.
 Improve design skills
BJT transistors have a factor “ꞵ” that represents the
This lab is useful for developing skills in the design of basic amplification ratio between the collector current Ic and the
circuits with BJTs, opening the door to work with more base current IB, it is useful while in the active region.
advanced transistors.
IB
 Reinforce theorical knowledge
Ic= (1)
β
It also helps to consolidate the theorical knowledge acquired For the transistors used in the laboratory the values of “ꞵ”
in class, putting into practice the concepts studied and giving a were:
practical context to this topic (transistors).
BC547B: 200 - 450
BC557B: 200 – 450
III. DEVELOPMENT
b) Circuit Assembly:
1. Phase 1: BJT Characterization

This phase was developed at simulation level.

Figure 1. Characterization circuit for the BC547B NPN transistor

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c) Measurement:

Figure 6. Simulation

Figure 2. Simulation Hand Calculated Simulation value

value
VE [V] 10,7 10
Hand Calculated Simulation value VC [V] 10 10
value VB [V] 10 10
VE [V] 0 0 IE [mA] 2,8 0
VC [V] 4,1 4,34 IC [mA] 2,8 0
VB [V] 0,7 0,66 IB [µA] 9,3 0
IE [mA] 2,62 2,64 Figure 7. Parameters hand calculated vs simulation
IC [mA] 2,61 2,63
IB [µA] 8,7 8,9
Table 1. Parameters hand calculated vs simulation.

Figure 8. Sweep IC vs VCE

Figure 3. Sweep IC vs VBE

Figure 9. Sweep IB vs VCE

Figure 4. Sweep IB vs VBE
d) Discussion:
The same steps were made for the PNP transistor.
The results calculated by hand meet what was expected
according to the simulation in the case of the NPN transistor,
but for the PNP the results differ quite a bit, since in the
simulation the current values are very small, which does not
make much sense, so it is deduced that the error is occurring in
the simulation.

In the sweeps performed, the BJT regions can be identified,

for “OFF” the voltage VCE and the Current IB are less than 0,
for the active region VCE > 2 [V] with a Current of 8.1 [mA],
and in saturation 0 < VCE < 2.

𝛽 remains constant because the voltage VCE

Figure 5. Characterization circuit for the BC557B PNP transistor
depends on constant currents (IB and IC) that
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are directly related to 𝛽. In saturation 𝛽

increases as does the IC current.
R1
I out= ∗Iref (3)
R2
The values measured in the simulation
(approximately 290) for 𝛽 are in accordance with
b) Circuit Assembly:

those indicated in the datasheet (200-450).

In the active region, the BJT acts as a current-

controlled current source, where there exists a
linear relationship between IC and IB. In this
region, the graph shows that IC depends only on
IB and not directly on VCE, being represented as
a straight line.

NPN and PNP are types of transistors that differ

in the direction of current conduction and the
way they are polarized. NPN transistors are
faster, more efficient, and better able to handle
high currents, which is why they are commonly
Figure 3. Assembly PNP current mirror.

used in most electronic circuits, especially with

The corresponding assembly was carried out using a BC557B
positive power supplies. On the other hand, PNP
transistor and the resistors indicated in the guide.
transistors, although somewhat slower, are ideal
for circuits with negative power supplies.
c) Measurement:

The real values of the resistors were:

Conclusions (Phase 1)
Theorical value Real value
It was observed that the simulations in LTspice gave
R1 [Ω] 330 328
coherent values as in the sweeps performed, but it should
R2 [Ω] 330 328
be noted that for the PNP transistor the simulation gives
R3 [kΩ] 2 1.99
values as if it were in the "OFF" region.
R4 [kΩ] 3.5 3.58
Table 2. Resistors real and theorical values
2. Phase 2: Building a BJT Current Mirror

Figure 4. R1 and R2 Real value

Figure 2. PNP current mirror circuit.2

a) Theorical Analysis:

A Current Mirror is a circuit that copies a current (Iref)

through two identical transistors and resistors, to maintain a
fixed output current (Iout). An expression to find Iref:

V DD−0 , 7
Iref = (2)
R 1+ R 4
And the relation between Iref and Iout is:
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Figure 7. Iref

Figure 5. R3 real value

Figure 8. VBEQ1

Figure 6. R4 Real value

Some following parameters were measured with the

multimeter.
Figure 9. VCEQ1
Parameter Measured Value Units
Iref 4,87 mA
VBEQ1 0,67 V
VCEQ2 0,66 V
IBQ1 14,29 µA
ICQ1 4,91 mA
ꞵQ1 344 A/A
VBP 17,96 V
Iout 4,1 mA Figure 10. IBQ1
VBEQ2 0,65 V
VCEQ2 7,85 V
IBQ2 13,79 µA
ICQ2 4,2 mA
ꞵQ2 305 A/A
Table 3. Measured parameters for the PNP current mirror

Figure 11. IcQ1

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Figure 17. IBQ2

Figure 110. VBp

Figure 114. IcQ2

Figure 111. Iout
d) Discussion:

The operating region in which the two transistors are located

is active, since they work as a current controller.

The value of “ꞵ” measured with the multimeter for each

transistor corresponds to the range indicated in the datasheet
(200-450), which shows a correct procedure in data collection.

Regarding the Iout and Iref currents, they were expected to be

Figure 112. VBEQ2
equal, and although they are not exactly, they are close in
value, the small difference may be due to the real values of the
resistors or inaccuracy in the measuring tools.

Conclusions (Phase 2)

The Current Mirror works as expected, the reference

current is reflected in the output and kept constant.

BJTs can be used for different purposes depending on their

region and surrounding conditions.

IV. REFERENCIAS

[1] Adel Sedra, Kenneth C. Smith, Microelectronic Circuits 2019.

Figure 113. VCEQ2
[2] Alex Mantilla, Lab #5: Meeting the BJT, 2024.