ch04
ch04
Imperfections in Solids
ISSUES TO ADDRESS...
• What are the solidification mechanisms?
Chapter 4 - 0
Imperfections in Solids
Chapter 4 - 0
Polycrystalline Materials
Grain Boundaries
• regions between crystals
• transition from lattice of
one region to that of the
other
• slightly disordered
• low density in grain
boundaries
– high mobility
– high diffusivity
– high chemical reactivity
Adapted from Fig. 4.7,
Callister & Rethwisch 8e.
Chapter 4 - 0
Solidification
Grains can be - equiaxed (roughly same size in all directions)
- columnar (elongated grains)
~ 8 cm
heat
flo
w
Shell of
Columnar in equiaxed grains
area with less due to rapid
undercooling cooling (greater
Adapted from Fig. 5.17, T) near wall
Callister & Rethwisch 3e.
Chapter 4 - 0
Types of Imperfections
• Vacancy atoms
• Interstitial atoms Point
• Substitutional defects
atoms
• Line defects
Dislocations
• Grain Area
Boundaries defects
Chapter 4 - 0
• Vacancies:
Point Defects in Metals
-vacant atomic sites in a
structure.
Vacancy
distortion
of
planes
• Self-Interstitials:
-"extra" atoms positioned between atomic sites.
self
-interstitia
distortion l
of
planes
Chapter 4 - 0
Equilibrium Concentration:
Point Defects
• Equilibrium concentration varies with temperature!
Nv = æ Qv ö
No. of potential ex ç
defect sites N p è kT ø
Temperature
Boltzmann's constant
(1.38 x 10 -2 J/atom-K)
3
(8.62 x 10 - eV/atom-K)
5
Each lattice site
is a potential
vacancy site
Chapter 4 - 0
Measuring Activation Energy
• We can get Qv from Nv æ- Q v ö
an experiment. = ex ç
ç
N p è kT ø
• Measure this... • Replot it...
Nv Nv slope
ln
N N
- Q v /k
exponential
dependence
!
T atom
1/ T
Im
defect
concentration Chapter 4 - 0
Estimating Vacancy Concentration
• Find the equil. # of vacancies in 1 m3 of Cu at 1000 C.
• Given:
r = 8.4 g / cm 3 A = 63.5 g/mol
C
Q v = 0.9 eV/atom N u = 6.02 x 1023 atoms/mol
A
0.9 eV/atom
Nv = æ- Q v ö
ex ç
ø= 2.7 x 10-
ç
N p è kT 4 K
1273
8.62 x 10-5 eV/atom-K
NA
For 1 m3 ,N= r x x 1 m3 = 8.0 x 1028 sites
AC
u
• Answer:
Chapter 4 - 0
Imperfections in Metals (i)
Two outcomes if impurity (B) added to host (A):
• Solid solution of B in A (i.e., random dist. of point defects)
OR
Chapter 4 - 0
Imperfections in Metals (ii)
Conditions for substitutional solid solution (S.S.)
• W. Hume – Rothery rule
– 1. r (atomic radius) < 15%
– 2. Proximity in periodic table
• i.e., similar electronegativities
– 3. Same crystal structure for pure metals
– 4. Valency
• All else being equal, a metal will have a greater tendency
to dissolve a metal of higher valency than one of lower
valency
Chapter 4 - 0
Imperfections in Metals (iii)
Application of Hume–Rothery rules – Solid
Solutions
Element Atomic Crystal Electro- Valence
Radius Structure nega-
(nm) tivity
1. Would you predict Cu 0.1278 FCC 1.9 +2
more Al or Ag C
H
0.071
0.046
to dissolve in Zn? O 0.060
Ag 0.1445 FCC 1.9 +1
Al 0.1431 FCC 1.5 +3
Co 0.1253 HCP 1.8 +2
2. More Zn or Al Cr 0.1249 BCC 1.6 +3
Fe 0.1241 BCC 1.8 +2
in Cu? Ni 0.1246 FCC 1.8 +2
Pd 0.1376 FCC 2.2 +2
Zn 0.1332 HCP 1.6 +2
Table on p. 118, Callister & Rethwisch 8e.
Chapter 4 - 0
Impurities in Solids
• Specification of composition
– weight percent
m1 = mass of component
1
– atom percent
Chapter 4 - 0
Line Defects
Dislocations:
• are line defects,
• slip between crystal planes result when dislocations move,
• produce permanent (plastic) deformation.
Chapter 4 - 0
Imperfections in Solids
Linear Defects (Dislocations)
– Are one-dimensional defects around which atoms are
misaligned
• Edge dislocation:
– extra half-plane of atoms inserted in a crystal structure
– b perpendicular ( ) to dislocation line
• Screw dislocation:
– spiral planar ramp resulting from shear deformation
– b parallel ( ) to dislocation line
Chapter 4 - 0
Imperfections in Solids
Edge Dislocation
Chapter 4 - 0
Motion of Edge Dislocation
• Dislocation motion requires the successive bumping
of a half plane of atoms (from left to right here).
• Bonds across the slipping planes are broken and
remade in succession.
b
Dislocation
line
Burgers vector b (b)
(a)
Adapted from Fig. 4.4, Callister & Rethwisch 8e.
Chapter 4 - 0
VMSE: Screw Dislocation
• In VMSE:
– a region of crystal containing a dislocation can be rotated in 3D
– dislocation motion may be animated
Edge
Screw
Adapted from Fig. 4.5, Callister & Rethwisch 8e.
Chapter 4 - 0
Imperfections in Solids
Dislocations are visible in electron micrographs
• Stacking faults
– For FCC metals an error in ABCABC packing sequence
– Ex: ABCABABC
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Catalysts and Surface Defects
• A catalyst increases the
rate of a chemical
reaction without being
consumed Fig. 4.10, Callister & Rethwisch 8e.
Single crystals of
(Ce0.5Zr0.5)O2
used in an automotive
catalytic converter
Fig. 4.11, Callister & Rethwisch 8e.
Chapter 4 - 0
Microscopic Examination
• Crystallites (grains) and grain boundaries.
Vary considerably in size. Can be quite large.
– ex: Large single crystal of quartz or diamond or Si
– ex: Aluminum light post or garbage can - see the
individual grains
• Crystallites (grains) can be quite small (mm or
less) – necessary to observe with a
microscope.
Chapter 4 - 0
Optical Microscopy
• Useful up to 2000X magnification.
• Polishing removes surface features (e.g., scratches)
• Etching changes reflectance, depending on crystal
orientation.
crystallographic planes
Adapted from Fig. 4.13(b) and (c), Callister
& Rethwisch 8e. (Fig. 4.13(c) is courtesy
of J.E. Burke, General Electric Co.)
Micrograph of
brass (a Cu-Zn alloy)
0.75mm
Chapter 4 - 0
Optical Microscopy
Grain boundaries...
• are imperfections,
• are more
susceptible
to etching,
polished surface
• may be revealed as
dark lines, surface
• change in crystal groove
grain
(a)
orientation across boundary
Adapted from Fig. 4.14(a)
boundary. and (b), Callister &
ASTM grain Rethwisch 8e.
(Fig. 4.14(b) is courtesy
size of L.C. Smith and C. Brady,
number the National Bureau of
N = 2 n -1 Standards, Washington, DC
[now the National Institute of
Standards and Technology,
Fe-Cr alloy Gaithersburg, MD].)
number of
at 100x
grains/in2 (b)
magnificatio Chapter 4 - 0
n
Optical Microscopy
• Polarized light
– metallographic scopes often use polarized
light to increase contrast
– Also used for transparent samples such as
polymers
Chapter 4 - 0
Microscopy
Optical resolution ca. 10-7 m = 0.1 m = 100 nm
For higher resolution need higher frequency
– X-Rays? Difficult to focus.
– Electrons
• wavelengths ca. 3 pm (0.003 nm)
– (Magnification - 1,000,000X)
• Atomic resolution possible
• Electron beam focused by magnetic lenses.
Chapter 4 - 0
Scanning Tunneling Microscopy
(STM)
• Atoms can be arranged and imaged!
Photos produced from
the work of C.P. Lutz,
Zeppenfeld, and D.M.
Eigler. Reprinted with
permission from
International Business
Machines Corporation,
copyright 1995.
Chapter 4 - 0
Summary
• Point, Line, and Area defects exist in solids.
Chapter 4 - 0
ANNOUNCEMENTS
Reading
:
Core
Problems:
Self-help
Problems:
Chapter 4 - 0