Zener Diode and Other Diodes

By
Dr. Aref Eliwa
 References
[1] “Microelectronic Circuits”, Adel S. Sedra and Kenneth
C. Smith, fifth edition oxford university press, 2004.
[2] “Microelectronics Circuit Analysis and Design” Donald
A. Neamen, fourth edition, McGraw-Hill, 2010.
[3] “Electronic Devices”, Thomas L. Floyd, seventh
edition, Pearson Prentice Hall, 2005.
[4] “Integrated Electronic ”, Jacob Millman, Christos C.
Halkias, McGraw Hill, 1985.
[5] “ Art of Electronic”, Thomas C. Hayer, Paul Horowitz,
Cambridge university press, 1989.
 Zener Diodes - Operation in the Reverse Breakdown Region

The zener diode is a silicon pn junction devices

that differs from rectifier diodes because it is
designed for operation in the reverse-breakdown
region. The breakdown voltage of a zener diode is
set by carefully controlling the level during
manufacture. The basic function of zener diode is
to maintain a specific voltage across it’s terminals
within given limits of line or load change.
Typically it is used for providing a stable
reference voltage for use in power supplies and
other equipment.
This particular zener circuit will work to
maintain 10 V across the load.
 Zener Diodes
A zener diode is much like a normal diode. The exception being is that it is placed in the
circuit in reverse bias and operates in reverse breakdown. This typical characteristic curve
illustrates the operating range for a zener. Note that it’s forward characteristics are just like
a normal diode.

Volt-ampere characteristic is shown in this Figure with normal operating regions for
rectifier diodes and for zener diodes shown as shaded areas. 4
 Zener Breakdown
Zener diodes are designed to operate in reverse breakdown. Two types of reverse
breakdown in a zener diode are avalanche and zener. The avalanche break down
occurs in both rectifier and zener diodes at a sufficiently high reverse voltage. Zener
breakdown occurs in a zener diode at low reverse voltages.

A zener diode is heavily doped to reduced the breakdown voltage. This causes a very
thin depletion region. As a result, an intense electric field exists within the depletion
region. Near the zener breakdown voltage (Vz), the field is intense enough to pull
electrons from their valence bands and create current. The zener diodes breakdown
characteristics are determined by the doping process

Low voltage zeners less than 5V operate in the zener breakdown range. Those
designed to operate more than 5 V operate mostly in avalanche breakdown range.
Zeners are commercially available with voltage breakdowns of 1.8 V to 200 V.
 Breakdown Characteristics
Figure shows the reverse portion of a zener diode’s characteristic curve. As the reverse
voltage (VR) is increased, the reverse current (IR) remains extremely small up to the
“knee” of the curve. The reverse current is also called the zener current, IZ. At this
point, the breakdown effect begins; the internal zener resistance, also called zener
impedance (ZZ), begins to decrease as reverse current increases rapidly.
Example
The 6.8-V zener diode in the circuit of shown figure is specified to have
Vz = 6.8 V at Iz = 5 mA, rz = 20 Ω, and Izk = 0.2 mA. The supply voltage
V+ is nominally 10 V but can vary by ±1V.
a) Find Vo with no load and with V+ at its nominal value.
(b) Find the change in Vo resulting from the ± 1-V change in V+.
(c) Find the change in Vo resulting from connecting a load resistance
(d) Find the value of Vo when RL = 0.5 kΩ.
(e) What is the minimum value of RL for which the diode still operates in the break-
down region?

Solution (a) With no load

V Z 0  6.7 V

V +  VZ 0
IZ  I 
R  rz
10 - 6.7
  6.35 mA VO  V Z 0  I Z rz
0.5  0.02
 6.7  6.35  0.02  6.83 V
(b) For a ± 1-V change in V+, the change in output voltage can be found from
rz 20
 VO   V   1    38.5 mA
R  rz 500  20

Line regulation  38.5 mV/V

(c) When a load resistance of 2 kΩ is connected, the load current will be

approximately 6.8 V/2 kΩ = 3.4 mA. Thus the change in zener current will be
∆IZ = -3.4 mA, and the corresponding change in zener voltage (output voltage)
will thus be
(d) An RL of 0.5 kΩ would draw a load current of 6.8/0.5 = 13.6 mA. This is
not possible because the current I supplied through R is only 6.4 mA (for V+
= 10 V). Therefore, the zener must be cut off. If this is indeed the case, then
Vo is determined by the voltage divider formed by rl and R,

Since this voltage is lower than the breakdown voltage of the zener, the diode is
indeed no longer operating in the breakdown region.
(e) For the zener to be at the edge of the breakdown region, Iz = IZK = 0.2 mA and
Vz=Vzo=6.7 V. At this point the lowest (worst case) current supplied through R is
(9 - 6.7)/0.5 = 4.6 mA, and thus the load current is 4.6 - 0.2 = 4.4 mA. The
corresponding value of RL is
 Zener Power Dissipating and Derating
Zener diodes are specified to operate at a maximum power called
the maximum dc power dissipation, PD(max).
PD = VZIZ
The maximum power dissipation of a zener diode is typically
specified for temperature at or below a certain value (50 oC, for
example). The derating factor is expressed in mW/oC. The
maximum derated power can be determined with the following
formula:
PD(derated) = PD(max) – (mW/oC)ΔT
Ex A certain zener diode has a maximum power rating of 400 mW at 50 oC
and a derating factor of 3.2 mW/oC. Determine the maximum power the
zener can dissipate at a temperature of 90 oC.
PD(derated) = PD(max) – (mW/oC)ΔT
= 400 mW – (3.2 mW/oC)(90oC – 50 oC)
= 400 mW – 128 mW = 272 mW
 Zener Limiting
Zener diodes can used in ac applications to limit voltage swings to desired
levels. Part (a) shows a zener used to limit the positive peak of a signal voltage
to the selected voltage. When the zener is turned around, as in part (b), the
negative peak is limited by zener action and the positive voltage is limited to +
0.7 V.
Ex Determine the output voltage for each zener limiting circuit
in Figure.
 Optical Diodes
The light-emitting diode (LED) emits photons as visible light. It’s
purpose is for indication and other intelligible displays. Various
impurities are added during the doping process to vary the color
output.
 Optical Diodes

The seven segment display is an example of LEDs use for display of decimal digits.
 How Light Emitting Diode (LED) works?

Light Emitting Diode (LED) works only

in forward bias condition. When Light
Emitting Diode (LED) is forward biased,
the free electrons from n-side and the
holes from p-side are pushed towards
the junction.
When free electrons reach the junction
or depletion region, some of the free
electrons recombine with the holes in
the positive ions. We know that positive
ions have less number of electrons than
protons. Therefore, they are ready to
accept electrons. Thus, free electrons
recombine with holes in the depletion
region. In the similar way, holes from p-
side recombine with electrons in the
depletion region.
 Because of the recombination of free
electrons and holes in the depletion region,
the width of depletion region decreases. As a
result, more charge carriers will cross the p-n
junction.
 The free electrons in the conduction band
releases energy in the form of light before
they recombine with holes in the valence
band.
 When external voltage is applied to the
valence electrons, they gain sufficient energy
and breaks the bonding with the parent atom.
The valence electrons which breaks bonding
with the parent atom are called free
electrons.
 The free electrons in the conduction band do
not stay for long period. After a short period,
the free electrons lose energy in the form of
light and recombine with the holes in the
valence band. Each recombination of charge
carrier will emit some light energy.
Biasing of LED
The safe forward voltage ratings of
most LEDs is from 1V to 3 V and
forward current ratings is from 20 mA
to 100 mA.
If the voltage applied to LED is in
between 1V to 3V, LED works
perfectly because the current flow for
the applied voltage is in the operating
range. However, if the voltage applied
to LED is increased to a value greater
than 3 volts. The depletion region in
the LED breaks down and the electric
current suddenly rises. This sudden
rise in current may destroy the device.
To avoid this we need to place
a resistor (Rs) in series with the LED.
The resistor (Rs ) must be placed in
between voltage source (Vs) and LED.
Visible LEDs and invisible LEDs

LEDs are mainly classified into two types: visible LEDs and invisible LEDs.
Visible LED is a type of LED that emits visible light. These LEDs are mainly
used for display or illumination where LEDs are used individually without
photosensors. Invisible LED is a type of LED that emits invisible light (infrared
light). These LEDs are mainly used with photosensors such as photodiodes.
What determines the color of an LED?
The material used for constructing LED determines its color. In other
words, the wavelength or color of the emitted light depends on the
forbidden gap or energy gap of the material.

• Different materials emit different colors of light.

Gallium arsenide LEDs emit red and infrared light.
• Gallium nitride LEDs emit bright blue light.
• Yttrium aluminium garnet LEDs emit white light.
• Gallium phosphide LEDs emit red, yellow and green light.
• Aluminium gallium nitride LEDs emit ultraviolet light.
• Aluminum gallium phosphide LEDs emit green light.
 Schottky diode

Schottky diode is a metal-semiconductor junction diode that has less forward

voltage drop than the P-N junction diode and can be used in high-speed switching
applications.

n schottky diode, metals such as aluminum or platinum replace the P-type

semiconductor. The schottky diode is named after German physicist Walter H.
Schottky.

Schottky diode is also known as schottky barrier diode, surface barrier diode,
majority carrier device, hot-electron diode, or hot carrier diode. Schottky diodes
are widely used in radio frequency (RF) applications.
When aluminum or platinum metal is joined with N-type semiconductor, a
junction is formed between the metal and N-type semiconductor. This
junction is known as a metal-semiconductor junction or M-S junction. A
metal-semiconductor junction formed between a metal and n-type
semiconductor creates a barrier or depletion layer known as a schottky
barrier.
Schottky diode can switch on and off much faster than the p-n junction
diode. Also, the schottky diode produces less unwanted noise than p-n
junction diode. These two characteristics of the schottky diode make it
very useful in high-speed switching power circuits.
A silicon diode has a voltage drop of 0.6 to 0.7 volts, while a schottky
diode has a voltage drop of 0.2 to 0.3 volts. Voltage loss or voltage drop
is the amount of voltage wasted to turn on a diode.

Symbol of schottky diode

The symbol of schottky diode is shown in the below figure. In schottky
diode, the metal acts as the anode and n-type semiconductor acts as the
cathode.
What is a schottky barrier?
Schottky barrier is a depletion layer formed at the junction of a
metal and n-type semiconductor. In simple words, schottky
barrier is the potential energy barrier formed at the metal-
semiconductor junction. The electrons have to overcome this
potential energy barrier to flow across the diode.
The rectifying metal-semiconductor junction forms a rectifying
schottky barrier. This rectifying schottky barrier is used for
making a device known as schottky diode. The non-rectifying
metal-semiconductor junction forms a non-rectifying schottky
barrier.
Limiting and Clamping Circuits
Thanks