SiT8209

Ultra-Performance Oscillator

Features Applications
Any frequency between 80.000001 and 220 MHz accurate to SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI
6 decimal places Express, video, Wireless
100% pin-to-pin drop-in replacement to quartz-based oscillators Computing, storage, networking, telecom, industrial control
Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,
7.0 x 5.0 mm x mm
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra-short lead time
[1]
Table 1. Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 80.000001 – 220 MHz
Frequency Stability F_stab -10 – +10 PPM Inclusive of Initial tolerance at 25 °C, and variations over
-20 – +20 PPM operating temperature, rated power supply voltage and load
-25 – +25 PPM
-50 – +50 PPM
Operating Temperature Range T_use -20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported.
2.25 2.5 2.75 V Contact SiTime for guaranteed performance specs for supply
voltages not specified in this table.
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption Idd – 34 36 mA No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V
OE Disable Current I_OD – – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
– – 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current I_std – – 70 µA Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly
Pulled Down
– – 10 µA Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down
Duty Cycle DC 45 – 55 % f <= 165 MHz, all Vdds.
40 – 60 % f > 165 MHz, all Vdds.
Rise/Fall Time Tr, Tf – 1.2 2 ns 15 pF load, 10% - 90% Vdd
Output Voltage High VOH 90% – – Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
Output Voltage Low VOL – – 10% Vdd
Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST
Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or ST logic high
2 – – MΩ Pin 1, ST logic low
Startup Time T_start – 7 10 ms Measured from the time Vdd reaches its rated minimum value
OE Enable/Disable Time T_oe – – 115 ns f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
Resume Time T_resume – – 10 ms In standby mode, measured from the time ST pin
crosses 50% threshold. Refer to Figure 5.
RMS Period Jitter T_jitt – 1.5 2 ps f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 2 3 ps f = 156.25 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj – 0.5 1 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
First year Aging F_aging -1.5 – +1.5 PPM 25°C
10-year Aging -5 – +5 PPM 25°C

Note:
1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.

Rev 1.1 January 2, 2017 www.sitime.com

SiT8209 Ultra-Performance Oscillator

Table 2. Pin Configuration

Pin Symbol Functionality
Top View
[2]
Output H or Open : specified frequency output
Enable L: output is high impedance. Only output driver is disabled. OE/ST 1 4 VDD
1 OE/ ST [2]
H or Open : specified frequency output
Standby L: output is low (weak pull down). Device goes to sleep mode.
Supply current reduces to I_std.
[3]
2 GND Power Electrical ground GND 2 3 OUT
3 OUT Output Oscillator output
[3]
4 VDD Power Power supply voltage
Figure 1. Pin Assignments
Notes:
2. A pull-up resistor of <10 kΩ between OE/ ST pin and Vdd is recommended in high noise environment.
3. A capacitor of value 0.1 µF between Vdd and GND is recommended.

Table 3. Absolute Maximum

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit

Storage Temperature -65 150 °C

VDD -0.5 4 V
Electrostatic Discharge – 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C
Junction Temperature – 150 °C

Table 4. Thermal Consideration

Package θJA, 4 Layer Board (°C/W) θJA, 2 Layer Board (°C/W) θJC, Bottom (°C/W)
7050 191 263 30
5032 97 199 24
3225 109 212 27
2520 117 222 26

Table 5. Environmental Compliance

Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C

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SiT8209 Ultra-Performance Oscillator

Phase Noise Plot

-40

-60
Integrated random phase jitter (12kHz to 20MHz): 0.49 ps,RMS
Phase noise (dBc/Hz)
-80

-100

-120

-140

-160
3 4 5 6 7
10 10 10 10 10

Frequency offset (Hz)

Figure 2. Phase Noise, 156.25 MHz, 3.3V, LVCMOS Output

Test Circuit and Waveform[4]

Vdd Vout
Test
Point
tr tf
4 3
Power 90% Vdd
Supply 0.1µF 15pF 50%
1 2 (including probe
10% Vdd
and fixture
capacitance) High Pulse
Low Pulse
(TH)
(TL)
OE/ST Function

Vdd Period
1kΩ

Figure 3. Test Circuit Figure 4. Waveform

Notes:
4. Duty Cycle is computed as Duty Cycle = TH/Period.
5. SiT8209 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact SiTime.

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SiT8209 Ultra-Performance Oscillator

Timing Diagram

Figure 5. Startup Timing (OE/ST Mode) Figure 6. Standby Resume Timing (ST Mode Only)

Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only)

Notes:
6. SiT8209 supports NO RUNT pulses and No glitches during startup or resume.
7. SiT8209 supports gated output which is accurate within rated frequency stability from the first cycle.

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SiT8209 Ultra-Performance Oscillator

Performance Plots[8]

3.3V 2.5V 1.8V

3.3V 2.5V 1.8V
3.00
40.0
38.0 2.50

RMS Period jitter, ps

36.0
34.0 2.00
32.0
Idd, mA

30.0 1.50
28.0
1.00
26.0
24.0 0.50
22.0
20.0 0.00
80 100 120 140 160 180 200 220 80 100 120 140 160 180 200 220
Frequency, MHz Frequency, MHz

Figure 8. Idd vs Frequency Figure 9. RMS Period Jitter vs Frequency

3.3V 2.5V 1.8V 2.5V 3.3V 1.8V

60.0 1
58.0 0.9
56.0 0.8
RMS Phase jitter, ps

54.0 0.7
Duty cycle, %

52.0 0.6
50.0 0.5
48.0 0.4
46.0 0.3
44.0 0.2
42.0
0.1
40.0
0
80 100 120 140 160 180 200 220 80 100 120 140 160 180 200 220
Frequency, MHz Frequency, MHz

Figure 10. Duty Cycle vs Frequency Figure 11. RMS Phase Jitter vs Frequency

1.8V 2.5V 3.3V 1.8V (10%-90%) 2.5V (10%-90%) 3.3V (10%-90%)

1.8V (20%-80%) 2.5V (20%-80%) 3.3V (20%-80%)
35 2.0

33
1.5
Rise Time, ns
Idd, mA

31

1.0
29

27 0.5

25
-40 -20 0 20 40 60 80 0.0
-40 -20 0 20 40 60 80
Temperature, °C
Temperature, °C

Figure 12. Idd vs Temperature, 100 MHz Output Figure 13. Rise Time vs Temperature, 100 MHz Output

Note:
8. All plots are measured with 15pF load at room temperature, unless otherwise stated.

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SiT8209 Ultra-Performance Oscillator

Programmable Drive Strength One can choose to speed up the rise/fall time to 1.41ns by
then increasing the drive strength setting on the SiT8209.
The SiT8209 includes a programmable drive strength feature
to provide a simple, flexible tool to optimize the clock rise/fall The SiT8209 can support up to 60 pF or higher in
time for specific applications. Benefits from the programmable maximum capacitive loads with up to 3 additional drive
drive strength feature are: strength settings. Refer to the Rise/Tall Time Tables to
Improves system radiated electromagnetic interference determine the proper drive strength for the desired
combination of output load vs. rise/fall time
(EMI) by slowing down the clock rise/fall time
Improves the downstream clock receiver’s (RX) jitter by
SiT8209 Drive Strength Selection
decreasing (speeding up) the clock rise/fall time.
Ability to drive large capacitive loads while maintaining Tables 6 through 9 define the rise/fall time for a given
capacitive load and supply voltage.Select the table that
full swing with sharp edge rates.
matches the SiT8208 nominal supply voltage (1.8V, 2.5V,
For more detailed information about rise/fall time control and 2.8V, 3.0V, 3.3V).
drive strength selection, see the SiTime Applications Note 1. Select the table that matches the SiT8209 nominal
section: http://www.sitime.com/support/application-notes.
supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).

EMI Reduction by Slowing Rise/Fall Time 2. Select the capacitive load column that matches the
Figure 14 shows the harmonic power reduction as the rise/fall application requirement (5 pF to 60 pF)
times are increased (slowed down). The rise/fall times are
3. Under the capacitive load column, select the
expressed as a ratio of the clock period. For the ratio of 0.05,
the signal is very close to a square wave. For the ratio of 0.45, desired rise/fall times.
the rise/fall times are very close to near-triangular waveform. 4. The left-most column represents the part number
These results, for example, show that the 11th clock harmonic
code for the corresponding drive strength.
can be reduced by 35 dB if the rise/fall edge is increased from
5% of the period to 45% of the period. 5. Add the drive strength code to the part number for
ordering purposes.

Calculating Maximum Frequency

Based on the rise and fall time data given in Tables 6
through 9, the maximum frequency the oscillator can
operate with guaranteed full swing of the output voltage
over temperature as follows:

1
Max Frequency =
6 x (Trise)

Example 1
Figure 15. Harmonic EMI reduction as a Function
of Slower Rise/Fall Time Calculate fMAX for the following condition:

Jitter Reduction with Faster Rise/Fall Time Vdd = 1.8V (Table 6)

Capacitive Load: 30 pF
Power supply noise can be a source of jitter for the
Typical Tr/f time = 5 ns
downstream chipset. One way to reduce this jitter is to
increase rise/fall time (edge rate) of the input clock. Some (rise/fall time part number code = G)
chipsets would require faster rise/fall time in order to reduce Part number for the above example:
their sensitivity to this type of jitter. The SiT8209 provides up
to 3 additional high drive strength settings for very fast SiT8209AIGG2-18E-55.500000
rise/fall time. Refer to the Rise/Fall Time Tables to determine
the proper drive strength.

High Output Load Capability Drive strength code is inserted here. Default setting is “-”
The rise/fall time of the input clock varies as a function of the
actual capacitive load the clock drives. At any given drive
strength, the rise/fall time becomes slower as the output load
increases. As an example, for a 3.3V SiT8209 device with
default drive strength setting, the typical rise/fall time is
1.15ns for 15 pF output load. The typical rise/fall time slows
down to 2.72ns when the output load increases to 45 pF.

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SiT8209 Ultra-Performance Oscillator

Rise/Fall Time (10% to 90%) vs CLOAD Tables

Table 6. Vdd = 1.8V Rise/Fall Times Table 7. Vdd = 2.5V Rise/Fall Times
for Specific CLOAD for Specific CLOAD
Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L 12.45 17.68 19.48 46.21 57.82 L 8.68 13.59 18.36 32.70 42.06
A 6.50 10.27 16.21 23.92 30.73 A 4.42 7.18 11.93 16.60 21.38
R 4.38 7.05 11.61 16.17 20.83 R 2.93 4.78 8.15 11.19 14.59
B 3.27 5.30 8.89 12.18 15.75 B 2.21 3.57 6.19 8.55 11.04
S 2.62 4.25 7.20 9.81 12.65 S 1.67 2.87 4.94 6.85 8.80
D 2.19 3.52 6.00 8.31 10.59 D 1.50 2.33 4.11 5.68 7.33
T 1.76 3.01 5.14 7.10 9.15 T 1.06 2.04 3.50 4.84 6.26
E 1.59 2.59 4.49 6.25 7.98 E 0.98 1.69 3.03 4.20 5.51
U 1.49 2.28 3.96 5.55 7.15 U 0.93 1.48 2.69 3.73 4.92
F 1.22 2.10 3.57 5.00 6.46 F 0.90 1.37 2.44 3.34 4.42
W 1.07 1.88 3.23 4.50 5.87 W 0.87 1.29 2.21 3.04 4.02
G 1.01 1.64 2.95 4.12 5.40 G or "-": Default 0.67 1.20 2.00 2.79 3.69
X 0.96 1.50 2.74 3.80 4.98 X 0.44 1.10 1.86 2.56 3.43
K 0.92 1.41 2.56 3.52 4.64 K 0.38 0.99 1.76 2.37 3.18
Y 0.88 1.34 2.39 3.25 4.32 Y 0.36 0.83 1.66 2.20 2.98
Q 0.86 1.29 2.24 3.04 4.06 Q 0.34 0.71 1.58 2.07 2.80
Z or "-": Default 0.82 1.24 2.07 2.89 3.82 Z 0.33 0.65 1.51 1.95 2.65
M 0.77 1.20 1.94 2.72 3.61 M 0.32 0.62 1.44 1.85 2.50
N 0.66 1.15 1.84 2.58 3.41 N 0.31 0.59 1.37 1.77 2.39
P 0.51 1.09 1.76 2.45 3.24 P 0.30 0.57 1.29 1.70 2.28

Table 8. Vdd = 2.8V Rise/Fall Times Table 9. Vdd = 3.3V Rise/Fall Times
for Specific CLOAD for Specific CLOAD

Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns)

Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF
L 7.93 12.69 17.94 30.10 38.89 L 7.18 11.59 17.24 27.57 35.57
A 4.06 6.66 11.04 15.31 19.80 A 3.61 6.02 10.19 13.98 18.10
R 2.68 4.40 7.53 10.29 13.37 R 2.31 3.95 6.88 9.42 12.24
B 2.00 3.25 5.66 7.84 10.11 B 1.65 2.92 5.12 7.10 9.17
S 1.59 2.57 4.54 6.27 8.07 S 1.43 2.26 4.09 5.66 7.34
D 1.19 2.14 3.76 5.21 6.72 D 1.01 1.91 3.38 4.69 6.14
T 1.00 1.79 3.20 4.43 5.77 T 0.94 1.51 2.86 3.97 5.25
E 0.94 1.51 2.78 3.84 5.06 E 0.90 1.36 2.50 3.46 4.58
U 0.90 1.38 2.48 3.40 4.50 U 0.86 1.25 2.21 3.03 4.07
F 0.87 1.29 2.21 3.03 4.05 F or "-": Default 0.48 1.15 1.95 2.72 3.65
W 0.62 1.19 1.99 2.76 3.68 W 0.38 1.04 1.77 2.47 3.31
G or "-": Default 0.41 1.08 1.84 2.52 3.36 G 0.36 0.87 1.66 2.23 3.03
X 0.37 0.96 1.72 2.33 3.15 X 0.34 0.70 1.56 2.04 2.80
K 0.35 0.78 1.63 2.15 2.92 K 0.33 0.63 1.48 1.89 2.61
Y 0.33 0.67 1.54 2.00 2.75 Y 0.32 0.60 1.40 1.79 2.43
Q 0.32 0.63 1.46 1.89 2.57 Q 0.32 0.58 1.31 1.69 2.28
Z 0.31 0.60 1.39 1.80 2.43 Z 0.30 0.56 1.22 1.62 2.17
M 0.30 0.57 1.31 1.72 2.30 M 0.30 0.55 1.12 1.54 2.07
N 0.30 0.56 1.22 1.63 2.22 N 0.30 0.54 1.02 1.47 1.97
P 0.29 0.54 1.13 1.55 2.13 P 0.29 0.52 0.95 1.41 1.90

Rev. 1.1 Page 7 of 15 www.sitime.com

SiT8209 Ultra-Performance Oscillator

Instant Samples with Time Machine and For more information regarding SiTime’s field programmable
solutions, visit http://www.sitime.com/time-machine and
Field Programmable Oscillators http://www.sitime.com/fp-devices.
SiTime supports a field programmable version of the
SiT8209 low power oscillator for fast prototyping and real SiT8209 is typically factory-programmed per customer
time custom- ization of features. The field programmable ordering codes for volume delivery.
devices (FP devices) are available for all five standard
SiT8209 package sizes and can be configured to one’s
exact specification using the Time Machine II, an USB
powered MEMS oscillator programmer.
Customizable Features of the SiT8209 FP Devices
Include
Any frequency between 1 – 110 MHz
Three frequency stability options, ±20 PPM, ±25 PPM,
±50 PPM
Two operating temperatures, -20 to 70°C or -40 to 85°C
Five supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V, and 3.3V
Output drive strength

Rev. 1.1 Page 8 of 15 www.sitime.com

SiT8209 Ultra-Performance Oscillator

Dimensions and Patterns

Package Size – Dimensions (Unit: mm) [9] Recommended Land Pattern (Unit: mm) [10]
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)

1.9
2.7 ± 0.05 1.00

2.4 ± 0.05

0.50
YXXXX 1.25

1.5

1.0
0.85
.
0.75 ± 0.05
1.1

3.2 x 2.5 x 0.75 mm

2.2
3.2 ± 0.05 2.1
#4 #3 #3 #4
2.5 ± 0.05
0.9

1.9
YXXXX
0.7

1.2
#1 #2 #2 #1

0.9
0.75 ± 0.05

1.4

5.0 x 3.2 x 0.75 mm

2.54
5.0 ± 0.05 2.39
#4 #3 #3 #4
3.2 ± 0.05

0.8

2.2

YXXXX
1.1

1.6

#1 #2 #2 #1

1.15 1.5
0.75 ± 0.05

7.0 x 5.0 x 0.90 mm

7.0 ± 0.05 5.08

5.08
5.0 ± 0.05

2.6

3.81

YXXXX
1.1

2.0

1.4
0.90 ± 0.10

2.2

Notes:
9. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location
of the device.
10. A capacitor of value 0.1 µF between Vdd and GND is required.

Rev. 1.1 Page 9 of 15 www.sitime.com

SiT8209 Ultra-Performance Oscillator

Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime
Part Number Generator.

SiT8209AC-23-25E - 156.123456 T
Packaging
“T”: Tape & Reel, 3K reel
Part Family
“Y”: Tape & Reel, 1K reel
“SiT8209” Blank for Bulk

Revision Letter Frequency

“A” is the silicon revision 80.000001 to 220.000000 MHz

Temperature Range Feature Pin

“E” for Output Enable
“C” Ext. Commercial, -20 to 70ºC
“S” for Standby
“I” Industrial, -40 to 85ºC

Voltage Supply
Output Drive Strength
“18” for 1.8V ±5%
“–” Default (datasheet limits)
“25” for 2.5V ±10%
See Tables 6 to 9 for rise/fall
times “28” for 2.8V ±10%
“33” for 3.3V ±10%
“L” “S” “U” “X” “Z”
“A” “D” “F” “K” “M”
“R” “T” “W” “Y” “N” Frequency Tolerance
“B” “E” “G” “Q” “P” “F” for ±10 PPM
“1” for ±20 PPM
Package “2” for ±25 PPM
“G” 2.5 x 2.0 “3” for ±50 PPM
“2” 3.2 x 2.5
“3” 5.0 x 3.2
“8” 7.0 x 5.0

Rev. 1.1 Page 10 of 15 www.sitime.com

SiT8209 Ultra-Performance Oscillator

Table 10. Additional Information

Document Description Download Link
Time Machine II MEMS oscillator programmer http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable Devices that can be programmable in the field
http://www.sitime.com/products/field-programmable-oscillators
Oscillators by Time Machine II

Manufacturing Notes Tape & Reel dimension, reflow profile and http://www.sitime.com/component/docman/doc_download/243-manufacturing-
other manufacturing related info notes-for-sitime-oscillators

Qualification Reports RoHS report, reliability reports,

http://www.sitime.com/support/quality-and-reliability
composition reports
Additional performance data such as phase
Performance Reports noise, current consumption and jitter for selected http://www.sitime.com/support/performance-measurement-report
frequencies
Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes
Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes

SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
© SiTime Corporation 2016-2017. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage
or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect
or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or
(iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.

Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.

CRITICAL USE EXCLUSION POLICY

BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR
FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.

SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does
not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale
of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.

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Silicon MEMS Outperforms Quartz

Supplemental Information

The Supplemental Information section is not part of the datasheet and is for informational purposes only.

Rev. 1.1 Page 12 of 15 www.sitime.com

Silicon MEMS Outperforms Quartz

Silicon MEMS Outperforms Quartz Best Electro Magnetic Susceptibility (EMS)

SiTime’s oscillators in plastic packages are up to 54 times
Best Reliability more immune to external electromagnetic fields than quartz
Silicon is inherently more reliable than quartz. Unlike quartz oscillators as shown in Figure 3.
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable Why is EpiSeal MEMS Best in Class:
products. Figure 1 shows a comparison with quartz
technology. Internal differential architecture for best common
mode noise rejection
Why is EpiSeal™ MEMS Best in Class: Electrostatically driven MEMS resonator is more
SiTime’s MEMS resonators are vacuum sealed using immune to EMS
an advanced EpiSeal™ process, which eliminates
TXC EPS CW KYCA SLAB EpiSeal MEMS
foreign particles and improves long term aging and
100.0
reliability

Vibration Sensitivity (ppb/g)

World-class MEMS and CMOS design expertise
10.0

1.0

0.1

0.0
10 100 1000
Vibration Frequency (Hz)

[3]
Figure 3. Electro Magnetic Susceptibility (EMS)

Best Power Supply Noise Rejection

SiTime’s MEMS oscillators are more resilient against noise
Figure 1. Reliability Comparison[1] on the power supply. A comparison is shown in Figure 4.
Best Aging
Why is EpiSeal MEMS Best in Class:
Unlike quartz, MEMS oscillators have excellent long
term aging performance which is why every new SiTime On-chip regulators and internal differential
product specifies 10-year aging. A comparison is shown architecture for common mode noise rejection
in Figure 2. MEMS resonator is paired with advanced analog
CMOS IC
Why is EpiSeal MEMS Best in Class:
SiTime’s MEMS resonators are vacuum sealed using
an advanced EpiSeal™ process, which eliminates
foreign particles and improves long term aging and
reliability
Inherently better immunity of electrostatically driven
MEMS resonator
MEMS vs. Quartz Aging
EpiSeal MEMS Oscillator Quartz Oscillator
10

8
8
Aging (± PPM)

6 [4]
Figure 4. Power Supply Noise Rejection
4 3.5
3

2 1.5

0
1-Year 10-Year

[2]
Figure 2. Aging Comparison

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Silicon MEMS Outperforms Quartz

Best Vibration Robustness Best Shock Robustness

High-vibration environments are all around us. All SiTime’s oscillators can withstand at least 50,000 g shock.
electronics, from handheld devices to enterprise servers They all maintain their electrical performance in operation
and storage systems are subject to vibration. Figure 5 during shock events. A comparison with quartz devices is
shows a comparison of vibration robustness. shown in Figure 6.

Why is EpiSeal MEMS Best in Class: Why is EpiSeal MEMS Best in Class:
The moving mass of SiTime’s MEMS resonators is up The moving mass of SiTime’s MEMS resonators is up
to 3000 times smaller than quartz to 3000 times smaller than quartz
Center-anchored MEMS resonator is the most robust Center-anchored MEMS resonator is the most robust
design design

[6]
Figure 5. Vibration Robustness
[5] Figure 6. Shock Robustness

Figure labels:
TXC = TXC
Epson = EPSN
Connor Winfield = CW
Kyocera = KYCA
SiLabs = SLAB
SiTime = EpiSeal MEMS

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Silicon MEMS Outperforms Quartz

Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
Field strength: 3V/m
Radiated signal modulation: AM 1 kHz at 80% depth
Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
Antenna polarization: Vertical
DUT position: Center aligned to antenna

Devices used in this test:

Label Manufacturer Part Number Technology

EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL
EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW
TXC TXC BB-156.250MBE-T Quartz, 3rd Overtone
rd
CW Conner Winfield P123-156.25M Quartz, 3 Overtone
KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW
SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL
4. 50 mV pk-pk Sinusoidal voltage.

Devices used in this test:

Label Manufacturer Part Number Technology

EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL

NDK NDK NZ2523SB-25.6M Quartz
KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz
EPSN Epson SG-310SCF-25M0-MB3 Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
MIL-STD-883F Method 2002
Condition A: half sine wave shock pulse, 500-g, 1ms
Continuous frequency measurement in 100 µs gate time for 10 seconds

Devices used in this test:

same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer.

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