12/26/22

Module 2: Schottky diodes Ls

1. Metal-semiconductor junctions
2. Electrostatic analysis
3. Schottky diode current rd Cj
4. Schottky diode breakdown n-

5. SPICE model of a Schottky diode rs

n+

97

Schottky diode: small signal circuit model

𝑉"
Diode current: 𝐼! = 𝐼& [exp( − 1)]
𝜂𝑉%
#$
𝑑𝐼! 𝜂𝑉%
Small signal resistance: 𝑟! ≜ =
𝑑𝑉" 𝑉"
𝐼& exp Ls
𝜂𝑉%
Small signal junction capacitance: C j0
Cj =
Va
(1 - ) Low-doped epitaxial
fi
Layer (<1016 cm-3)
Parasitic elements: rd Cj
n-
Series resistance, rs
Heavily doped
Series inductance, Ls rs
n+ Substrate (>1018 cm-3)
rd
rs Ls
Heavily doped substrates still add to the series resistance
Cj Substrate thinning is used to reduce this resistance
2.5.1

98

1
 12/26/22

Schottky diode SPICE model (large signal)

Diode current:
(! (!
𝐼' = 𝐼& [exp( − 1)] + 𝐼&* [exp( − 1)]
)(" )# ("
Diode junction capacitance
1 Diode Parameter SPICE notation Description
𝐶+ 𝑉" = 𝐶+,
$ 𝑉
1− " Is IS Ideal diode saturation current
𝜙-
anode h N Ideality factor
Rs RS Series resistance
Diode series resistance 𝑅& Cj0 CJO Junction capacitance at zero bias
+ m M Capacitance profile parameter
𝑉" 𝐼'(𝑉" ) 𝐶+ (𝑉" ) fi VJ Built-in potential
- Isr ISR Recombination saturation current
cathode hr NR Recombination current ideality factor

Note: series inductance is to be added separately 2.5.2

99

Schottky diode SPICE model

• SPICE model description
Format: .MODEL “NAME” D parameter=value
Where “name” is the name chose, D refers to the SPICE diode model
If parameters are not used the default value is substituted

Example
.MODEL ZC830A D IS=5.355E-15 N=1.08 RS=0.1161
+ EG=1.11 CJO=19.15E-12 M=0.9001 VJ=2.164
+ BV=45.1 IBV=51.74E-3 TT=129.8E-9 ISR=1.043E-12 NR=2.01

Other parameters

Diode Parameter SPICE notation Description

Eg EG Bandgap energy
Vbr BV Breakdown voltage
Ibr IBV Current at breakdown
t TT Transit time 2.5.3

100

2
 12/26/22

Diode I-V curve simulation example

SPICE circuit diagram

SPICE diode model:

25.0 100
25.0 100
scale]

scale]
[logscale]

[log scale]
20.0 1
20.0 Breakdown 1
Diode Current (A)

Diode Current (A)

voltage

(A) [log
(A)[log

15.0 0.01
15.0 0.01
Current(A)

Current (A)
10.0 0.0001
10.0 0.0001
Diode Current

DiodeCurrent
5.0 0.000001
5.0 0.000001
Didoe

0.0 1E-08

Didoe
0.0 1E-08

-5.0 1E-10
-5.0 1E-10
-1.00 -0.50 0.00 0.50 1.00
-15.00 -10.00 -5.00 0.00
Diode Voltage (V) Diode Voltage (V)
2.5.4

101

Forward biased diode analysis

1.E+02 30
Diode Current (A) [log scale]

𝜂≅1
1.E+00 𝑅. = 12.5 𝑚Ω 25
@ 𝑉" = 1𝑉
Didoe Current (A)

1.E-02 20
𝑉" 𝑉"
1.E-04 15 𝐼' = 𝐼& [exp − 1] + 𝐼&* [exp − 1]
𝜂𝑉% 𝜂* 𝑉%
𝜂* ≅ 2
1.E-06 10 1
𝐼.* log e slope
1.E-08 5 𝜂= =
𝑉% slope 59.6 mV/decade

1.E-10 0
1 𝑑𝑉"
𝐼. =
1.E-12 -5 𝑅. 𝑑𝐼'
0.00 0.50 1.00
Diode Voltage (V)
2.5.5

102

3
 12/26/22

Reverse biased diode analysis

Series resistance
limited current Voltage dependent
Breakdown leakage current
voltage
1.E+03 0.E+00
Diode current magnitude (A)

1.E+01
-2.E-09

Diode current (A)

1.E-01
1.E-03 -4.E-09

1.E-05 Rapid current increase -6.E-09

1.E-07 at breakdown
-8.E-09
1.E-09
1.E-11 -1.E-08
-12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0
Diode voltage (V)
2.5.6

103

Schottky diode SPICE model (cont.)

• Additional elements not included in the SPICE model
• Package capacitance
• A 1x1cm pad placed in air 1 mm above a ground plane adds 0.9 pF
• Wire inductance
• Wire without a ground plane adds ~ 0.1nH/mm
• Junction termination capacitance (Vbr > 600V)

• SPICE model references:

• P. Tuinenga, SPICE: a guide to circuit simulation and analysis using
Pspice, Prentice Hall, 1988
• M. H. Rashid, SPICE for circuits and electronic using Pspice,
Prentice Hall, 1995

2.5.7

104