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ESC201 UDas Lec13Class Diodes

Diodes can act like switches by allowing current to flow easily in one direction and blocking it in the other. Special diodes include solar cells, photodiodes, LEDs, and laser diodes. At the junction between two different semiconductor materials, a built-in electric field arises due to the separation of charges. This field causes the diode to have a forward voltage drop and allow current flow above a threshold voltage but block current in reverse bias. Diode characteristics can be modeled using an exponential I-V relationship and solved graphically or iteratively to determine operating points under different bias conditions.

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67 views9 pages

ESC201 UDas Lec13Class Diodes

Diodes can act like switches by allowing current to flow easily in one direction and blocking it in the other. Special diodes include solar cells, photodiodes, LEDs, and laser diodes. At the junction between two different semiconductor materials, a built-in electric field arises due to the separation of charges. This field causes the diode to have a forward voltage drop and allow current flow above a threshold voltage but block current in reverse bias. Diode characteristics can be modeled using an exponential I-V relationship and solved graphically or iteratively to determine operating points under different bias conditions.

Uploaded by

Pk Kumar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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IDEAL

ESc201, Lecture 13:  


13:  Diodes
Diodes
DIODE
Circuit Symbol for a Diode ACTS
LIKE A
SWITCH

Some Special Diodes:


Direction of current flow
– Diode Solar Cell
– Photodiode (PD) Could be two different
– Light Emitting Diode (LED) (LED) materials or the same
– LASER Diode material with different kind Electrons leaving a neutral
of doping of impurities
impurities. material leaves positively
– Tunnel Diode Electrons coming into a charged ion-
ion-cores
– Varactor Diode neutral material makes
– Gunn Diode negatively charged ion-
ion- cores. ion cores are
------------------------------------ immobile
– Schottky Diode
– Step Recovery Diode
Lot of absence of free Electrons Lot of free
OR Lot of Vacancies. Large concentration Gradient at the junction and hence Electrons.
electrons and vacancies would inter-
inter-diffuse.
This gives rise to a Separation of charges mean there is an Electric field
Built--in Potential at
Built dV
the junction. E=- and hence there must be a potential gradient
dx
ESc201, Lecture 13:  
13:  Diodes
Diodes
ESc201, Lecture 13:  
13:  Diodes
Diodes
Has a slope and hence a
forward eqv
eqv.. resistance
(~ tens of ), depending
Diodes having
on the semiconductor
breakdown and doping.
voltage 2-
2-5 V may
break down by a Voltage scale compressed
combination of by many times
both Avalanche
and Zener
mechanisms
C
Currentt
Avalanche scale
Breakdown Magnified
by many
Has a slope and hence an orders
equivalent resistance (<
100
100 )
(BV2 ~ 100
100--1kV)
depending on the BV2 Zener Breakdown Has a slope and hence an
semiconductor and the (BV1 fairly eqv
eqv.. resistance (~ 50 200),
50--200
increases
diode structure. with T independent of (BV1 ~ 5-5-8V) depending on
the semiconductor and
temperature)
doping.
ESc201, Lecture 13:  
13:  Diodes
Diodes
Ideal Diode iD Equivalent circuits
Forward
Forward
Slope → 0
resistance
resistance, rF
V +

+
 V

Von
v
: Cutin Voltage
D
~0.6V for Silicon

Reverse

B kd
Breakdown
resistance
rA or rZ
  
BV BV BV
+ + +
ESc201, Lecture 13:  
13:  Diodes
Diodes
VD VT= (k
(kBT)/q
Diode II--V Relation :
q
nk B T 25 9mV at 300oK.
= 25.9mV K
I D =IS[e -1]
ID is the diode current. ≈ 26mV at 300oK.
Is is the reverse saturation current Wh the
When th di
diode
d iis connected,
t d att
(~ tens of pA – few nA).
nA). forward bias, in series with a Voltage
kB is the Boltzman constant. Source and a Resistance .
T is the absolute temperature.
R
n is the ideality constant (close to 1 for good diodes).
V + ID
VD is the voltage across the Diode. VD
ID
For VD positive (Forward Bias) and large
with respect to VT, ID is exponential. V/R Load Line Equation:
=(V--VD)/R.
ID=(V R
Diode Equation:
For VD negative ID= IS[Exp(
[Exp(VVD/VT) – 1].
IDQ quiescent
(Reverse Bias and less Can be solved
current IDQ
operating current. Graphically
than Breakdown voltage),
the exponential term Load Line Equation:
rapidly decays and =(V--VD)/R.
ID=(V
Di d E
Diode Equation:
ti VD
ID = - IS . I = I [Exp(
[Exp(VV /V ) – 1].
D S D T
VDQ V
Can be solved iteratively. V
DQ quiescent operating Voltage.
ESc201, Lecture 13:  
13:  Diodes
Diodes

Some Special Diodes:


– Diode Solar Cell
– Photodiode (PD)
ESc201, Lecture 13:  
13:  Diodes
Diodes

– Light Emitting Diode (LED)


(LED)
– LASER Diode

Wavelengths spread
over a large
spectrum
spectrum.
No co
co--relation
Same wavelength and polarization between the photons.
ESc201, Lecture 12:  
12:  Diodes
Diodes
Anode Cathode
– Tunnel Diode
– Varactor Diode ID
– Gunn Diode
------------------------------------
– Schottky Diode

Cathode

ID≈0

Anode

Termed as transferred electron device.

Anode

ID

Cathode
Low cut in voltage (V≈ 0.1-0.2V), low BV, low capacitance It can also use as an amplifier.
ESc201, Lecture 12:  
12:  Diodes
Diodes

– Avalanche Breakdown Diode


specially designed to undergo breakdown at specific
reverse voltage
lt to
t preventt the
th ddamage.

– Step Recovery Diode Stores the charge from positive pulse and uses in the
negative pulse of the sinusoidal signals. The rise time
of the current p
pulse is equal
q to the snap
p time. Due to
this phenomenon it has speed recovery pulses.

Cut-off frequency range of 200


Cut- 200--300 GHz. In the operations which are performing at
10GH range these
10GHz th diodes
di d plays
l a vital
it l role.
l

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