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DTCB

The document outlines a series of problems related to Field Effect Transistors (FETs), including calculations for various parameters such as IDQ, VGSQ, VDS, and gm0 for different configurations and conditions. It also includes tasks involving graphical and mathematical approaches for determining values related to JFETs and their performance metrics. Additionally, the document presents problems that require analysis of voltage gain and input/output impedances for given networks.

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lengoctuong2005
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18 views2 pages

DTCB

The document outlines a series of problems related to Field Effect Transistors (FETs), including calculations for various parameters such as IDQ, VGSQ, VDS, and gm0 for different configurations and conditions. It also includes tasks involving graphical and mathematical approaches for determining values related to JFETs and their performance metrics. Additionally, the document presents problems that require analysis of voltage gain and input/output impedances for given networks.

Uploaded by

lengoctuong2005
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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FET problems

1. For the fixed-bias configuration of Fig. 1, determine:


a. IDQ and VGSQ using a mathematical approach.
b. Repeat part (a) using a graphical approach and
compare results.
c. Find VDS, VD, VG, and VS using the results of part (a).

Fig. 3

4. Calculate gm0 for a JFET having device parameters


IDSS = 12 mA and VGS(off) = -4 V.

5. Determine the pinch-off voltage of a JFET with gm0 =


10 mS and IDSS = 12 mA.

Fig.1
6. For a JFET having device parameters gm0 = 5 mS and
2. For the network of Fig. 2, determine: VP = VGS(off) =-4 V, what is the device current at VGS = 0
a. VGSQ and IDQ. V?
b. VDS, VD, VG, and VS. 7. Calculate the value of gm for a JFET (IDSS = 12 mA,
VP = -3 V) at a bias point of VGS =-0.5 V.

8. Determine Zi, Zo, and Av for the network of Fig. 4 if


IDSS = 10 mA, VP = -6 V, and rd = 40 k

Fig.2

3. For the network of Fig. 3, determine:


a. VG. Fig. 4
b. IDQ and VGSQ.
9. a. Find the value of RS to obtain a voltage gain of 2 for
c. VD and VS.
the network of Fig. 5 using rd =  .
d. VDSQ.
FET problems

b. Repeat part (a) with rd = 30 k. What was the


impact of the change in rd on the gain and the analysis?

Fig.5

10. Determine Zi, Zo, and Vo for the network of Fig. 6 if


Vi = 20 mV

Fig.6

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