GLASGOW COLLEGE UESTC

Solution to Mid-Term Main Exam paper

Semiconductor Physics (UESTC2028)
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Attempt all PARTS. Total 100 marks

Use one answer sheet for each of the questions in this exam.
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For Multiple Choice Questions, use the dedicated answer sheet provided.

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DATA/FORMULAE SHEET IS PROVIDED AT THE END OF PAPER

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Page 1 of 7
Physical constants:
Boltzmann’s constant: k = 1.38 × 10-23 J/K = 8.62 × 10-5 eV/K
Electronic charge: e = 1.60 × 10-19 C
Q1 (a) Describe the following concepts:
(i) covalent bonding [2]
(ii) Heisenberg uncertainty principle [2]
(iii) quantum state [3]
(iv) allowed energy band [3]
(v) fermi energy [3]
(vi) Maxwell–Boltzmann approximation [3]
(vii) freeze-out [3]
(viii) lattice scattering [3]
(ix) velocity saturation [3]
Solutions:
(i) The bonding between atoms in which valence electrons are shared. [2]
(ii) The principle that states that we cannot describe with absolute accuracy the
relationship between sets of conjugate variables that describe the behavior of
particles, such as momentum and position. [2]
(iii) A particular state of an electron that may be described, for example, by a set
of quantum numbers. [3]
(iv) A band or range of energy levels that an electron in a crystal is allowed to
occupy based on quantum mechanics [3]
(v) In the simplest definition, the energy below which all states are filled with
electrons and above which all states are empty at T = 0 K. [3]
(vi) The condition in which the energy is several kT above the Fermi energy or
several kT below the Fermi energy so that the Fermi–Dirac probability function
can be approximated by a simple exponential function. [3]
(vii) The condition that occurs in a semiconductor when the temperature is lowered
and the donors and acceptors become neutrally charged. The electron and hole
concentra tions become very small. [3]
(viii) The interaction between a charged carrier and a thermally vibrating lattice atom.
[3]
(ix) The saturation of carrier drift velocity with increasing electric field. [3]

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Q2 (a) Draw the crystal plane for (111) plane and [111] directions of a surface-centered
cubic (SCC) lattice. [6]
(b) Derive the Einstein relation between the mobility and diffusivity. [8]
(c) Sketch the average drift velocity of electrons in silicon versus electric field.
Briefly give the reason for the different phenomenon in each region. [4]
(d) Sketch the Fermi energy (EF) level versus doping concentration (Nd). Assume
Nd is ranged from 1014 to 1018 cm-3. [3]
(e) Write the equation for the total current density in a semiconductor when both
the electrons and holes are contributed. [4]

Solutions:

(a) [3]

(b) If we consider the nonuniformly doped semiconductor represented by the

energy band diagram shown in Figure 5.12 and assume there are no electrical
connections
so that the semiconductor is in thermal equilibrium, then the individual electron and
hole currents must be zero:
(1) [1]
If we assume quasi-neutrality so that n = Nd(x), then we can rewrite the above equation
as

(2) [1]

From the Boltmann statistics for electrons, we have

(3) [2]

Substituting the expression for the electric field from Equation (3) into Equation (2),
we obtain

[2]

This leads to the Einstein relation:

[2]

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Page 3 of 7
(c) The average drift velocity as a function of applied electric field for electrons in
silicon is plotted as follows.

. [2]
At low electric fields, the velocity varies linearly with the electric field. The slope of
the drift velocity versus electric field curve is the mobility. The drift velocity of
electrons in silicon saturates at approximately 107 cm/s at an electric field of
approximately 30 kV/cm. [2]
(d)
Ec

Ev
[3]
(e) The total current density of electrons is:

Jn = (Jn)drift + (Jn)diffusion [2]

= enμnE + eDn(dn/dx) [2]

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Page 4 of 7
Q3 (a) A n-type Si semiconductor at T = 300 K is uniformly doped with Na of 1015 cm-
3
and an unknown Nd. The equilibrium minority carrier concentration of 105 cm-
3
. Consider the impurities are completely ionized. Assume the following
parameters: electron mobility μn = 1250 cm2/V·s, hole mobility μp = 300
cm2/V·s, and equilibrium intrinsic concentration ni = 1010 cm-3.
(i) Calculate the value of majority carrier concentration. [5]
(ii) Calculate the value of Nd. [6]
(iii) Calculate the value of resistivity for electrons. [7]
(iv) Calculate the total drift current density when an electric field of 100
V/cm is applied. [7]
Solutions:
(i)
The majority carrier concentration is ni2 / (minority carrier concentration), that is 1015 cm-3.
[5]
15 15 15 -3
(ii) Nd = majority carrier concentration + Na = 10 + 10 = 2×10 cm [6]
(iii) ρn = 1/en0μn = 1/(1.6×10-19×2×1015×1250) = 2.5 Ω·cm. [7]

(iv) The contribution for the minority carrier is very small and can be neglected. The
total drift current density is (1/ρn) × E = 1/2.5*100 = 40 A/cm2 [7]

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Q4 (a) Assume the holes and electrons mobilities μn and μp are independent of their
carrier concentrations, and μn =1600 cm2/V·s, μp = 400 cm2/V·s. The
equilibrium intrinsic concentration ni = 1010 cm-3. Derive and calculate the
minimum conductivity σmin at thermal equilibrium condition. [10]

Solutions:

σ = en0μn + ep0μp = en0μn + e(ni2/n0)μp [2]

σ ≥ 2e·sqrt(μnμp) · ni [1]

The equality corresponds to the condition en0μn = eni2/n0μp. [1]

That means n0 = sqrt(μp/μn) · ni and p0 = sqrt(μn/μp) · ni. [2]

Since μn > μp, this means when σ obtains its minimum, p0 is greater than n0. This
corresponds to the p-type semiconductor. [2]

The minimum of σ is σmin = 2e·sqrt(μnμp) ni = 2*1.6×10-19*sqrt(1600*400)*1010 =

2.56×10-6 S·cm-1. [2]

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Page 6 of 7
(b) Figure 1 shows the electron concentration n(x) of a semiconductor at room temperature
of 300 K. Assume the electron mobility is μn.

(i) Calculate the expression of hole current density Jp(x) when no electric
field is applied. [4]

(ii) If the net current density of holes is zero, determine the value and
direction of the electric field inside the semiconductor. [5]

(ii) Assume n(W)/n0 = 105, calculate the electrostatic potential drop between
x = 0 and x = W. [4]

n(x)
n(W)

n0

0 W x

Figure 1

End of question paper

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