sensors

Article
Design and Verification of a New Universal Active Filter Based
on the Current Feedback Operational Amplifier and
Commercial AD844 Integrated Circuit
Hua-Pin Chen 1, * , I-Chyn Wey 2 , Liang-Yen Chen 2 , Cheng-Yueh Wu 1 and San-Fu Wang 3

1 Department of Electronic Engineering, Ming Chi University of Technology, New Taipei 24301, Taiwan;
m12158006@o365.mcut.edu.tw
2 Department of Electrical Engineering, Chang Gung University, Taoyuan City 33302, Taiwan;
icwey@mail.cgu.edu.tw (I.-C.W.); b1121255@cgu.edu.tw (L.-Y.C.)
3 Department of Electronic Engineering, National Chin-Yi University of Technology, Taichung 41170, Taiwan;
sf_wang@ncut.edu.tw
* Correspondence: hpchen@mail.mcut.edu.tw; Tel.: +886-2-2908-9899; Fax: +886-2-2908-5247

Abstract: This paper presents a triple-input and four-output type voltage-mode universal active
filter based on three current-feedback operational amplifiers (CFOAs). The filter employs three
CFOAs, two grounded capacitors, and six resistors. The filter structure has three high-input and
three low-output impedances that simultaneously provide band-reject, high-pass, low-pass, and
band-pass filtering functions with single-input and four-output type and also implements an all-pass
filtering function by connecting three input signals to one input without the use of voltage inverters or
switches. The same circuit configuration enables two unique filtering functions: low-pass notch and
high-pass notch. Three CFOAs with three high-input and low-output impedance terminals enable
cascading without voltage buffers. The circuit is implemented using three commercial off-the-shelf
AD844 integrated circuits, two grounded capacitors, and six resistors and further implemented as a
CFOA-based chip using three CFOAs, two grounded capacitors, and six resistors. The CFOA-based
chip has lower power consumption and higher integration than the AD844-based filter. The circuit
Citation: Chen, H.-P.; Wey, I.-C.; was simulated using OrCAD PSpice to verify the AD844-based filter and Synopsys HSpice for post-
Chen, L.-Y.; Wu, C.-Y.; Wang, S.-F. layout simulation of the CFOA-based chip. The theoretical analysis is validated and confirmed by
Design and Verification of a New measurements on an AD844-based filter and a CFOA-based chip.
Universal Active Filter Based on the
Current Feedback Operational Keywords: analog circuit design; chip implementation; voltage-mode filter; universal filter
Amplifier and Commercial AD844
Integrated Circuit. Sensors 2023, 23,
8258. https://doi.org/10.3390/
s23198258
1. Introduction
Academic Editor: Alfio Dario Grasso In electrical circuits and systems, filters play an essential role in sensors and signal pro-
Received: 31 August 2023
cessing and have received considerable attention in recent years because signals acquired
Revised: 18 September 2023 through sensing elements must be filtered out of external noise using filters [1–6]. The tech-
Accepted: 3 October 2023 nical literature [7] describes a conceptual scheme for sensing applications in phase-sensitive
Published: 5 October 2023 detection technology, where two low-pass (LP) filters are used to select the frequency range
and eliminate out-of-band noise from the sensor device signal. For sensors, instrumentation
and measurement systems, and electrical systems, filters reduce external noise, eliminate
interference, improve signal quality, and maintain signal integrity [8–10].
Copyright: © 2023 by the authors. Active circuits with high-performance characteristics are of great interest [11–26],
Licensee MDPI, Basel, Switzerland.
especially the AD844AN integrated circuit (IC) using CFOA, which is beneficial to rapid
This article is an open access article
verification of the designed circuits [27–31]. Typically, the voltage-mode universal second-
distributed under the terms and
order filters can realize all-pass (AP), band-reject (BR), high-pass (HP), LP, and band-pass
conditions of the Creative Commons
(BP) filtering functions by properly selecting different input signals. In contrast, the voltage-
Attribution (CC BY) license (https://
mode multifunction second-order filters can simultaneously realize HP, LP, and BP filtering
creativecommons.org/licenses/by/
4.0/).
functions [32]. Two unique filtering functions, low-pass notch (LPN) and high-pass notch

Sensors 2023, 23, 8258. https://doi.org/10.3390/s23198258 https://www.mdpi.com/journal/sensors

Sensors 2023, 23, 8258 2 of 24

(HPN), are particular BR filtering functions. The universal active filter (UAF) includes
seven different filtering functions, LP, BP, HP, BR, LPN, HPN, and AP, whose versatility
and practicality make them attractive to designers of active filters. A prominent application
of CFOA-based filters concerns the voltage-mode UAF configuration that provides seven
filtering capabilities. The UAF configuration features seven different filtering functions
that eliminate external noise, reduce interference, improve signal quality, and ensure signal
integrity. Many researchers use commercial off-the-shelf AD844AN ICs to verify the accu-
racy performance of electronic circuit designs because they are high quality, inexpensive,
and readily available [32–39]. The CFOA contains the well-known active element second-
generation current conveyor (CCII) in the input stage and a voltage buffer in the output
stage, solving the low output impedance issue of the CCII [40–43]. Alternatively, CFOA
can be implemented on a commercially available off-the-shelf AD844AN IC to facilitate
circuit design verification. Up to now, researchers have mainly focused on implementing
voltage-mode second-order filters employing CFOAs. With attention to the voltage-mode
universal/multifunction CFOA-based filters [32–43], researchers are also constantly devel-
oping new CFOA-based filters to increase their convenience, versatility, and universality.
In [32], the multifunction filter based on four CFOAs simultaneously realizes voltage-mode
LP, BP, and HP filtering functions. The topology cannot implement the BR and AP filtering
functions from the same configuration. In [33], the voltage-mode universal filter based
on three CFOAs is proposed. The proposed topology uses two floating capacitors. The
topology in [34] can simultaneously realize BR, LP, BP, and HP filtering functions with
high input impedance. The proposed topology uses four CFOAs, two grounded capacitors,
and four resistors. Another high input impedance multifunction filter employing three
CFOAs and six passive elements was proposed in [35]. The proposed topology has the
disadvantage that a capacitor is a direct connection to the X terminal of a CFOA, thus limit-
ing the frequency of operation of the circuit [16]. In [36], a voltage-mode UAF with high
input impedance based on four CFOAs was proposed. This topology requires four CFOA
active elements and a BR/AP filtering function switch. In [37–42], some voltage-mode
multifunction filters based on three CFOAs simultaneously realize LP, BP, and HP/BR
filtering functions. These topologies still cannot implement the AP filtering function from
the same configuration. In 2022, three voltage-mode UAFs based on four CFOAs were
proposed in the technical literature [43]. These three CFOA-based voltage-mode UAF cir-
cuits use four CFOAs, two grounded capacitors, five/six resistors, and one/two switches.
Each design topology requires three CFOA active elements to simultaneously implement
LP, BP, BR, and one CFOA with one or two HP/AP filter function switches. After care-
fully studying the literature [32–43] based on single-input or multiple-input voltage-mode
second-order filters, LP, BP, HP, BR, LPN, HPN, and AP filtering functions implemented
from the same configuration were not studied. The practical analog filter design must study
the convenience, versatility, and modularity of voltage-mode UAF.
This paper proposes a voltage-mode UAF with three high-input and low-output
impedances based on three CFOAs, two grounded capacitors, and six resistors. The
proposed CFOA-based voltage-mode UAF realizes LP, BP, HP, BR, LPN, HPN, and AP
filtering functions from the same configuration and offers the availability of input voltages
at high input impedance terminals. Furthermore, the proposed voltage-mode UAF was
implemented into a single CFOA-based chip. The CFOA-based voltage-mode UAF chip has
lower power consumption and higher integration than the AD844-based filter. Contrary to
the previously reported voltage-mode universal/multifunction second-order filters [32–43],
the proposed voltage-mode UAF meets the following advantages.
(i) The circuit uses only three CFOAs, two grounded capacitors, and six resistors with
no switches.
(ii) Utilizing only two grounded capacitors makes the circuit suitable for IC implementation.
(iii) Use the same circuit configuration to implement voltage-mode second-order LP, BP,
HP, BR, LPN, HPN, and AP filtering functions.
Sensors 2023, 23, 8258 3 of 24

(iv) Three high-input and low-output impedances are suitable for cascading voltage-mode
operation capability without voltage buffers.
(v) Simultaneously realize the voltage-mode second-order LP, BP, HP, and BR filtering
functions without requiring component matching conditions.
(vi) No capacitance is connected in series at terminal X of the CFOA.
(vii) No voltage inverter is required for the AP filtering function.
(viii) The filter parameters of resonance angular frequency (ωo ) and quality factor (Q)
independently control the particular case.
(ix) The circuit has low active and passive sensitivity performance.
(x) Integrate the voltage-mode UAF into a single CFOA-based chip.
Table 1 compares the proposed voltage-mode UAF and the previous CFOA-based
biquadratic filters [32–43]. The proposed CFOA-based voltage-mode UAF simultaneously
satisfies all of the tenth properties. In addition, the circuit is further implemented in a
single CFOA-based voltage-mode UAF chip with lower power consumption and higher
integration than the AD844-based filter. Compared to CFOA-based voltage-mode filters in
the recent technical literature [39–43], the proposed CFOA-based voltage-mode UAF does
not require any switch and achieves LP, BP, HP, BR, LPN, HPN, and AP filtering functions
from the same configuration. Moreover, the circuit simultaneously realizes LP, NP, HP, and
BR filtering functions. The CFOA-based voltage-mode UAF chip is manufactured with
TSMC 180 nm 1P6M CMOS process technology, featuring low power consumption and
high integration. Measurements using three commercial off-the-shelf AD844AN ICs and a
CFOA-based voltage-mode UAF chip validate and confirm the theoretical analysis.
Sensors 2023, 23, 8258 4 of 24

Table 1. Comparison of the proposed CFOA-based voltage-mode UAF with previously published filters.

Number of Simultaneous No Series Measured Measured

Number of Use of Only Capacitor on Orthogonal Operating
Active and Realization of No Switches Resonance Spurious-Free Total Supply and Results/
Topology/Year Filtering Grounded the X Terminal Control of Q
Passive Filtering Required Frequency fo Dynamic Harmonic Power Technology
Functions Capacitors of the CFOA and ωo
Elements Functions Range Distortion
CFOA × 4
[32]/2005 R×6 3 (LP, BP, HP) LP, BP, HP Yes Yes Yes Yes 15.9 kHz NA NA NA Sim./AD844
C×2
CFOA × 3
R×3 5 (LP, BP, HP, BP, HP, BR No Yes Yes Yes NA NA NA
[33]/2005 15.92 kHz Sim./AD844
C×2 BR, AP)
CFOA × 4
R×4 4 (LP, BP, HP, LP, BP, HP, BR Yes Yes Yes Yes NA NA NA
[34]/2005 7.96 kHz Exp./AD844
C×2 BR)
CFOA × 3
[35]/2005 R×4 3 (LP, BP, HP) LP, BP, HP Yes No Yes No 5.68 kHz NA NA ±12 V Sim./AD844
C×2
CFOA × 4
[36] in Figure R×8 5 (LP, BP, HP, LP, BP, HP,
C×2 BR, AP) BR/AP
Yes Yes No No 5.62 kHz NA NA ±12 V Exp./AD844
1d/2006
Switch × 1
CFOA × 3
R×3 4 (LP, BP, HP, LP, BP, BR Yes Yes Yes Yes NA 0.56% @ 2 Vpp ±6 V, 180 mW
[37]/2019 39.79 kHz Exp./AD844
C×2 BR)
CFOA × 3
[38]/2020 R×4 3 (LP, BP, BR) LP, BP, BR Yes Yes Yes Yes 102 kHz NA NA ±6 V, 168 mW Exp./AD844
C×2
CFOA × 3
[39]/2021 R×3 3 (LP, BP, BR) LP, BP, BR Yes Yes Yes Yes 39.79 kHz NA NA ±6 V, 255 mW Exp./AD844
C×2
3.2% @ 5.68
117.9 kHz (for Vpp (for the ±6 V, 168 mW
CFOA × 3 Exp./AD844 &
4 (LP, BP, HP, the AD844) AD844) (for the AD844)
[40]/2021 R×4 LP, BP, HP Yes Yes Yes Yes NA Chip (TSMC
C×2 BR) 757.88 kHz (for 3.18% @ 1.2 ±0.9 V, 5.4 mW
the chip) Vpp (for the (for the chip) 180 nm)
chip)
CFOA × 3 Exp./Chip
[41]/2022 R×4 3 (LP, BP, BR) LP, BP, BR Yes Yes Yes Yes 568 kHz 31.63 dBc 3.3% @ 1.2 Vpp ±0.9 V, 5.4 mW (TSMC 180
C×2 nm)
CFOA × 3 Exp./Chip
2.88% @ 1.5
[42]/2023 R×5 3 (LP, BP, BR) LP, BP, BR Yes Yes Yes Yes 530 kHz 33.74 dBc ±0.9 V, 5.4 mW (TSMC 180
Vpp
C×2 nm)
CFOA × 4
[43] in Figure R×5 5 (LP, BP, HP, LP, BP, BR,
C×2 BR, AP) HP/AP
Yes Yes No Yes 159 kHz NA NA ±10 V Exp./AD844
1a/2022
Switch × 2
CFOA × 4
[43] in Figure R×6 5 (LP, BP, HP, LP, BP, BR,
C×2 BR, AP) HP/AP
Yes Yes No Yes 159 kHz NA NA ±10 V Exp./AD844
1b/2022
Switch × 2
CFOA × 4
[43] in Figure 1 R×6 5 (LP, BP, HP, LP, BP, BR, Yes Yes No Yes NA NA ±10 V
C×2 HP/AP 159 kHz Exp./AD844
c/2022 BR, AP)
Switch × 1
1.68% @ 5.2
CFOA × 3 7 (LP, BP, HP, 159.15 kHz (for 37.62 dBc (for Vpp (for the ±6 V, 168 mW Exp./AD844 &
LP, BP, HP, BR/ the AD844) the AD844) (for the AD844)
Proposed R×6 BR, LPN, HPN, Yes Yes Yes Yes AD844) Chip (TSMC
C×2 AP)
LPN/ HPN 530.5 kHz (for 43.55 dBc (for 1% @ 0.4 Vpp
±0.9 V, 3.6 mW
the chip) the chip) (for the chip) 180 nm)
(for the chip)
Sensors 2023, 23, 8258 5 of 24
Sensors 2023, 23, x FOR PEER REVIEW 6 of 30

2. Circuit Descriptions and Realizations

The
2. Circuit ideal CFOA
Descriptions is a four-port
and Realizations active component with two input ports, X and Y,
andThetwo output
ideal CFOA isports, Z and
a four-port W,component
active as shownwith in two
Figure
input1. TheX port
ports, and Y,relations
and of CFOA can
be output
two characterized
ports, Z andby
W, V = VYin, Figure
asXshown VW =1. V TheZ , port
IY = 0, and
relations IX = Ican
of CFOA Z [43].
be char-The ideal CFOA is
acterized
logically byrepresentable
VX = VY, VW = VZ,as
IY =a0,voltage
and IX = Ibuffer
Z [43]. The ideal CFOA
between the is
Y logically represent- a current follower
and X terminals,
able as a voltage buffer between the Y and X terminals, a current follower between the X
between the X and Z terminals, and a subsequent voltage buffer between the Z and W
and Z terminals, and a subsequent voltage buffer between the Z and W ports. Moreover,
ports.
CFOA can Moreover, CFOAincan
be implemented be implemented
hardware in hardware
using commercially availableusing commercially available
off-the-shelf
off-the-shelf
AD844AN IC [44]. AD844AN IC [44].

IY
VY Y
Ideal W IW VW
IX Z
VX X
Sensors 2023, 23, x FOR PEER REVIEW IZ 6 of 30

VZ
Figure
Figure1. The circuit
1. The symbol
circuit of an ideal
symbol of CFOA.
an ideal CFOA.
2. Circuit Descriptions and Realizations
2.1.
2.1.Proposed
Proposed Voltage-Mode
Voltage-ModeUAF Configuration
UAF
The ideal CFOA is a four-port activeConfiguration
component with two input ports, X and Y, and
The proposed
two output ports, Z voltage-mode
and W, as shown UAFinconfiguration
Figure 1. The isport
shown in Figure
relations 2, which
of CFOA consists
caninbe char- 2, which consists
of
The
three CFOAs,
proposed voltage-mode UAF configuration is shown Figure
acterized by VX =two grounded
VY, V W = VZ, IY capacitors,
= 0, and IX =and six resistors.
IZ [43]. The idealIn Figure
CFOA 2, the input
is logically signals
represent-
Vof
i1, three
able Vasi2, aand CFOAs,
Vi3 are
voltage buffer
two
connectedgrounded
betweento thethe Yhighcapacitors,
andinput terminal
X terminals,
andof six
eachresistors.
a current Y terminal
follower
In Figure
of the
between three
the X
2, the input signals
V
CFOAs.
and , V ,
The
i1 Z terminals,
i2 and V
output
and are
voltagesconnected
V , V , to
and Vthe arehigh input
connected to terminal
the low
i3 a subsequent voltage buffer between the Z and W ports. Moreover,
o1 o2 o3 of
output each Y
terminal terminal
of of the three
each W terminal of the three CFOAs. High-input and low-output
CFOAs. The output voltages Vo1 , Vo2 , and Vo3 are connected to the low output terminal
CFOA can be implemented in hardware using commercially impedances
available can be used
off-the-shelf
for cascaded
AD844AN ICvoltage-mode
[44]. operation without requiring any voltage buffers. Routine anal-
of each W terminal of the three CFOAs. High-input and low-output impedances can be
ysis of the voltage-mode UAF in Figure 2 gives the following four output voltages:
used for cascaded voltage-mode operation without requiring any voltage buffers. Routine
IY of the voltage-mode UAF in Figure 2 gives the following four output voltages:
analysis
VY Y R3
Ideal W IW VW 1
IX Z Vo1 V = s CV Vi1 + C C2RRR1 6
Vi2 − s C RR12 R3 Vi3
1R
o43 1 2 R3 R4 1
VX X o1 (1)
X IZ R 4 +5s C11R3 + C1 C2RR12 R3 R4
s2 R
1 W X
Z VZ 2 R2
Y W X
−C 1 1
C R RZVi1 + (s C2 R4 + C1 C21R3 R4 )Vi2 + C1 C2RR12 R3 R4 Vi3
Figure 1. The circuitV 1 2YCFOA.
o2 = of an ideal
symbol 3 4 3 W Vo3 (2)
Vi1 C1 C2 V2 + s 1 +Z R1
so2 Y
C1 R3 C1 C2 R2 R3 R4
2.1. Proposed Voltage-Mode UAFVi2 Configuration
R R1 2, which consists
2 R1
1 1 Vi3
1 configuration
C1 R3 + CR )Vi1 −
The proposed voltage-mode (s UAF is shown in sFigure
1 C2 R2 R3 R4 C2 R2 R4 Vi2 + s R2 Vi3
Vo3 = capacitors, and six resistors.
of three CFOAs, two grounded In Figure 2, the input signals
R1
(3)
Vi1, Vi22.
Figure , and Vi3 are connected
The proposed to the
voltage-mode UAF high input
configuration.+ s C11R3of+each
s2 terminal C1 CYR terminal of the three
2 2 R3 R4
CFOAs. The output voltages Vo1, Vo2, and Vo3 are connected to the low output terminal of
each W terminal of the three CFOAs.
1 High-input
R 1 and 1 low-output R 1 impedances can be used
for cascaded voltage-modesoperation Vi1 V
+ o4 = requiring
without
(−Rs6voltage
Vi 2any Vo2 + buffers.
Vi53 Vo3 )Routine anal-
R (4)
CR R + R
C C 2 R 2 R5 3 R 4 6 C 1R 2 R 3
ysis of the voltage-modeVo1 =UAF1in3Figure 21 gives four output voltages: (1)
1 the followingR1
s2 + s +
C 1R 3 C 1C 2 R 2 R 3 R 4
R3
R6
Vo1 Vo4
X R4
1 W R5
X
R2
Y Z 2 W X
Z 3 W
Y Vo3
Vi1 C1 C2 Vo2 Y Z
Vi2
R1 Vi3
Figure 2. The proposed voltage-mode UAF configuration.
Figure 2. The proposed voltage-mode UAF configuration.

1 R1 R1
s Vi1 + Vi 2 − s Vi 3
C 1R 3 C 1C 2 R 2 R 3 R 4 C 1R 2 R 3
Vo1 = (1)
1 R1
s2 + s +
C 1R 3 C 1C 2 R 2 R 3 R 4
Sensors 2023, 23, 8258 6 of 24

According to (1)–(4), when the two input voltages of Vi1 and Vi2 are grounded, and
Vi3 is provided as the input signal of Vin , four different filtering functions can be realized
simultaneously.

Vo1 −s ωQo R −s C11R3

= a1 2 = 1( ) (5)
Vin s + s ωQo + ω2o R2 s2 + s 1
+ R1
C1 R3 C1 C2 R2 R3 R4

R1
Vo2 ω2o C1 C2 R2 R3 R4
= 2 = (6)
Vin s + s ωQo + ω2o s2 + s C 1R3 + C C2RR12 R3 R
1 1 4

Vo3 s2 R s2
= a1 2 ωo = 1( ) (7)
Vin s + s Q + ω2o R2 s2 + s 1
+ R1
C1 R3 C1 C2 R2 R3 R4
R6
Vo4 s2 + ω2z R1 R5 s2 + C1 C2 R3 R4 R5
= a2 2 = ( ) (8)
Vin s + s ωQo + ω2o R2 (R5 + R6 ) s2 + s 1 R1
C1 R3 + C1 C2 R2 R3 R4

From (5) to (8), the filter parameters bandwidth (BW), ωo , Q, passband gain a1 and a2 ,
and BR frequency ωz are given by
s s
1 R1 C1 R1 R3
BW = , ωo = , Q= (9)
C1 R3 C1 C2 R2 R3 R4 C2 R2 R4

R1 R1 R5
a1 = , a2 = (10)
R2 R2 (R5 + R6 )
s
R6
ωz = (11)
C1 C2 R3 R4 R5
Based on (5) to (7), an inverting band-pass (IBP) filtering function with R1 /R2 passband
gain is obtained at Vo1 , a non-inverting LP (NLP) filtering function with unity passband
gain is obtained at Vo2 , and a non-inverting HP (NHP) filtering function with R1 /R2
passband gain is obtained at Vo3 . According to (8), the following three BR filtering functions
are obtained.
(a) If R1 = R2 and R5 = R6 , the regular BR filtering function with 1/2 passband gain can
be realized in (12).

Vo4 1 s2 + C C21R3 R
1 4
= ( ) (12)
Vin 2 s2 + s C 1R + C C 1R
1 3 1 2 3 R4

(b) If R5 < R6 and ωz > ωo , the LPN filtering function can be obtained in (8).
(c) If R5 > R6 and ωz < ωo , the HPN filtering function can also be obtained in (8).
By connecting three input signals of Vi1 , Vi2 , and Vi3 into one input signal and selecting
the matching element condition of R1 = R2 and C1 R3 = 2C2 R4 , the voltage-mode UAF of
Vo3 performs the following non-inverting AP (NAP) filtering function.

s2 − s C 1R3 + 1
C1 C2 R3 R4
1
Vo3 = (13)
s2 + s C 1R3 + 1
C1 C2 R3 R4
1

According to (9), the voltage-mode UAF parameters BW, ωo, and Q can be controlled
orthogonally by R1 = R3 = Ra . In this particular case, (9) becomes
s s
1 1 C1
BW = , ωo = , Q = Ra (14)
C1 Ra C1 C2 R2 R4 C2 R2 R4
Sensors 2023, 23, 8258 7 of 24

Equation (14) expresses that Ra independently controls the parameters BW and Q with-
out affecting the parameter ωo . When R3 = R4 = Rb , the parameters ωo and Q in (9) become
s s
1 R1 C1 R1
ωo = , Q= (15)
Rb C1 C2 R2 C2 R2
Equation (15) expresses that Rb independently controls the parameter ωo without
affecting the parameter Q. Equations (14) and (15) show that the voltage-mode UAF
parameters Q and ωo are independently controlled by Ra and Rb , respectively.

2.2. Effects of CFOA Non-Idealities on Voltage-Mode UAF Characteristics

Assuming the non-ideal CFOA terminal characteristics as VX = βVY , VW = γVZ , and
IX = αIZ , where β = 1 − εβv , γ = 1 − εγv and α = 1 − εαi . Here, εβv (|εβv | << 1) and εγv
(|εγv | << 1) denote the voltage tracking errors of CFOA, and εαi (|εαi | << 1) represent the
current tracking error of non-ideal CFOA [31]. Considering the non-ideal CFOA terminal
characteristics in Figure 2, the analysis of voltage-mode UAF yields the denominator of the
non-ideal voltage transfer function as follows.

α1 γ1 γ3 α α α γ γ γ R
D(s) = s2 + s + 1 2 3 1 2 3 1 (16)
C1 R3 C1 C2 R2 R3 R4

The voltage-mode UAF parameters ωo and Q, in the case of non-ideal CFOA terminal
characteristics, are
s s
α1 α2 α3 γ1 γ2 γ3 R1 α2 α3 γ2 C1 R1 R3
ωo = , Q= (17)
C1 C2 R2 R3 R4 α1 γ1 γ3 C2 R2 R4

According to the definition of [43], the active and passive sensitivity parameters ωo
and Q of voltage-mode UAF are calculated as follows.
ωo
Sω o ωo ωo ωo ωo ωo
α1 = Sα2 = Sα3 = Sγ1 = Sγ2 = Sγ3 = SR1 = 0.5 (18)

Sω o ωo ωo ωo ωo
C = SC2 = SR2 = SR3 = SR = −0.5 (19)
1 4

Q Q Q
SQ Q Q
α2 = Sα3 = Sγ2 = SC = SR = SR3 = 0.5 (20)
1 1

Q Q Q
SQ Q Q
α1 = Sγ1 = Sγ3 = SC2 = SR2 = SR4 = −0.5 (21)
From the results, the voltage-mode UAF exhibits low active and passive sensitivities.
If Vi1 and Vi2 are grounded, and only Vi3 is provided as the input signal of Vin , the
four different filtering functions for non-ideal voltage and current gains become

Vo1 R − s α1 α 3 β3 γ3
C1 R3
= 1( ) (22)
Vin R2 s2 + s α1 γ1 γ3 + α1 α2 α3 γ1 γ2 γ3 R1
C 1 R3 C1 C2 R2 R3 R4

α1 α2 α3 β1 γ1 γ3 R1
Vo2 C1 C2 R2 R3 R4
= (23)
3 γ1 γ2 γ3 R1
Vin s + s C R3 + α1 αC2 α
2 α1 γ 1 γ 3
C2 R2 R3 R
1 1 4

Vo3 R α3 β3 s2
= 1( ) (24)
Vin R2 s2 + s 1 1 3 + α1 α2 α3 γ1 γ2 γ3 R1
α γ γ
C 1 R3 C1 C2 R2 R3 R4

3 β1 γ1 γ3 R6
Vo4 R1 R5 α3 β3 s2 + α1 αC2 α
1 C2 R3 R4 R5
= ( ) (25)
Vin R2 (R5 + R6 ) s2 + s α1 γ1 γ3 + α1 α2 α3 γ1 γ2 γ3 R1
C1 R3 C1 C2 R2 R3 R4
Sensors 2023, 23, 8258 8 of 24

The CFOA terminal characteristics generally have various parasitic impedances [43].
The parasitic impedances of these non-ideal CFOAs can affect the performance of the
proposed voltage-mode UAF. Figure 3 illustrates the non-ideal CFOA model for analyzing
the parasitic impedances and their effect on the voltage-mode UAF configuration. Using
the CFOA non-ideal model, the parasitic impedance effect of the proposed voltage-mode
UAF is analyzed, as shown in Figure 4. Reanalyzing the voltage-mode UAF in Figure 4, the
following non-ideal four output node voltages are obtained:

1 Vo3 Vi1
[s(C1 + CZ1 ) + ]Vo1 + = (26)
RZ1 R3 + RX1 R3 + RX1

1 1 Vi2
( )V + [s(C2 + CZ2 ) + ]Vo2 = (27)
R4 + RX2 o1 RZ2 R4 + RX2

1 1 1 1 Vi3
− Vo1 + ( )Vo2 + (sCZ3 + + )Vo3 = (28)
R1 R2 + RX3 RZ3 R1 R2 + RX3

1
Vo4 = (R6 Vo2 + R5 Vo310) of 30 (29)
Sensors 2023, 23, x FOR PEER REVIEW
Sensors 2023, 23, x FOR PEER REVIEW R5 + R6 10 of 30

Ideal
Ideal
R
RYY C
CYY CFOA
CFOA
Y
Y yy
Voltage
CCII zz
CCII Voltage w
R
RXX Buffer
Buffer
w W
W
X
X xx

C
CZZ
Non-ideal Z
Z
Non-ideal R
CFOA
CFOA
RZZ
Figure 3.
3. The effect of
of parasitic
Figure
Figure 3. The
The effect effect of resistances
parasitic resistances and
parasitic and capacitances
resistances on
on ideal
capacitancesand CFOA.
capacitances
ideal CFOA. on ideal CFOA.
R
R33
R
R66
R V V
Vo4
RX1
X1 X Vo1
o1
o4
X 11 R 4 R R
Vi1
Vi1 Ideal
IdealW
R 4 RX2
X2 X
2
R55
Y Z W VVi2i2
X 2
Ideal R22 R
R RX3
X3 X
Y Z Ideal
Z
W
W V i3
X 33
Y Z V Ideal W V
R Y1 CY1
RY1 CY1 RZ1 CZ1 Y V
i3 Ideal
Z W Vo3
o3
RZ1 CZ1 C Vo2
o2 Y Z
C11 RRY2 CY2
Y2 CY2 RZ2 CZ2 C
Y
RZ2 CZ2 C22 R
RY3 CY3
Y3 CY3 R C Z3
RZ3
Z3 C Z3
R
R11
Figure
Figure 4.
4. The
The effect
effect of
of CFOA
CFOA parasitic
parasitic resistances
resistances and
and capacitances
capacitances on
on the
the voltage-mode
voltage-mode UAF
UAF con-
con-
Figure 4. The effect of CFOA parasitic resistances and capacitances
figuration.
figuration. on the voltage-mode
UAF configuration.
11 V V
C11 ++ C
CZZ11)) ++ R ]]V Voo11 ++ R +oR3 ==
[[ss((C Vo 3 Vii11 (26)
+ R + R X1 (26)
Equations (26)–(29) show R Z1 that several
R R R 3 + R X1
parasitic resistances of RX1 , RX2 , RX3 , RZ1 , RZ2 ,
Z 1 3 X 1 3
3 X1

and RZ3 and three1 parasitic capacitances 1 of CVZ1 , C Z2 , and C Z3 will affect the voltage-
o1 + 2 + C Z 2 ) + 1 ]]V Voo22 == R + iR
( 1 ))V Vi 22
mode UAF. In (RFigure + R V4, +[[ss((C
o1 the 2 + C Z 2 ) + R Z 2 voltage-mode
Cproposed UAF (27)
has
(27) the attractive advantage
R 4 + R X2
4 X 2 R Z2 R 4 + R X2
4 X 2

that capacitors C1 and C2 are grounded, and resistors R2 , R3 , and R4 are connected to the
1 11 11 1 V
X-terminal −−ofR1the Voo11 +
V CFOA, Voo22 ++ ((sC
+ (( R + R respectively.
))V sCZZ33 ++ R The ++ 1main Voo33 == advantage
))V Vii33 of(28)
the proposed voltage-mode
R22 ++ R
(28)
R11 R22 + RXX33 RZZ33 R R11 R RXX33
UAF topology is that the two parasitic capacitance effects of CZ1 and CZ2 can be absorbed
by the two grounded Vcapacitors 11 of oC2 1+ Rand C , and the three(29) parasitic resistances of RX1 ,
Voo44 == R + R ((R R66V Vo 2 + R55V Voo33 )) 2 (29)
5 + R6
RX2 , and RX3 can also be absorbed R 5 6 by three series resistors of R3 , R4 , and R2 , respectively.
It isEquations
Equations (26)–(29)
(26)–(29) show
worth noting that that
show theseveral
that parasitic
several parasitic
parasitic resistances
resistances of
capacitance ofCR X1, RX2, RX3, RZ1, RZ2,
RZ3
X1, R and the
X2, RX3 , RZ1parasitic
, RZ2, resistances RZ1 , RZ2 ,
and
and R
R Z3 and three parasitic capacitances of C Z1, CZ2, and CZ3 will affect the voltage-mode
Z3 and three parasitic capacitances of C Z1, CZ2, and CZ3 will affect the voltage-mode
and
UAF. R Z3 affect the operating frequency range of voltage-mode UAF. If the conditions of
UAF. InIn Figure
Figure 4,
4, the
the proposed
proposed voltage-mode
voltage-mode UAF UAF has has the
the attractive
attractive advantage
advantage that that ca-
ca-
s(C
pacitors
1 +C 1C
and
Z1 )
C 2>>
are 1/R
grounded, Z1 , s(C
and +
resistors
2 C R
Z2 ) >>
2, R 1/R
3, and R 4 are
Z2
pacitors C1 and C2 are grounded, and resistors R2, R3, and R4 are connected to the X-termi- , and
connected sC to
Z3 (R
the //R
X-termi-
1 Z3 ) << 1 are satisfied, the
nal
nal of
of the
the CFOA,
influence respectively.
of the
CFOA, parasitic
respectively. The main
main advantage
Theresistances advantage and of
of the proposed
proposed voltage-mode
capacitances
the UAF
on voltage-mode
voltage-mode UAF UAF topology can
topology
topology is is that
that the
the two
two parasitic
parasitic capacitance
capacitance effects
effects of
of C
CZ1 and CZ2 can be absorbed by the
Z1 and CZ2 can be absorbed by the
two
two grounded
grounded capacitors
capacitors of
of C
C11 and
and C
C22,, and
and the
the three
three parasitic
parasitic resistances
resistances of
of R
RX1 , RX2, and
X1, RX2, and
R
RX3 can also be absorbed by three series resistors of R3, R4, and R2, respectively. It is worth
X3 can also be absorbed by three series resistors of R3, R4, and R2, respectively. It is worth
noting
noting that
that the
the parasitic
parasitic capacitance
capacitance CCZ3 and the parasitic resistances RZ1, RZ2, and RZ3 affect
Z3 and the parasitic resistances RZ1, RZ2, and RZ3 affect
the
the operating
operating frequency
frequency range
range ofof voltage-mode
voltage-mode UAF. UAF. If
If the
the conditions
conditions of
of s(C
s(C11 ++ C
CZ1 ) >>
Z1) >>
1/R
1/RZ1 , s(C2 + CZ2) >> 1/RZ2, and sCZ3(R1//RZ3) << 1 are satisfied, the influence of the parasitic
Z1, s(C2 + CZ2) >> 1/RZ2, and sCZ3(R1//RZ3) << 1 are satisfied, the influence of the parasitic
resistances
resistances andand capacitances
capacitances onon voltage-mode
voltage-mode UAF UAF topology
topology cancan be
be reduced.
reduced. Therefore,
Therefore,
Sensors 2023, 23, 8258 9 of 24

be reduced. Therefore, the valid operating frequency range of the voltage-mode UAF needs
to be considered as follows.
 
1 1 0.1
10 × max , ≤ f ≤ (30)
2π(C1 + CZ1 )RZ1 2π(C2 + CZ2 )RZ2 2πCZ3 (R1 //RZ3 )

According to (30), the non-ideal three output node voltages of (26) to (28) are simplified
as
Vo3 Vi1
s(C 1 +CZ1 )Vo1 + = (31)
R3 +RX1 R3 +RX1

1 Vi2
( )Vo1 +s(C 2 +CZ2 )Vo2 = (32)
R4 +RX2 R4 +RX2

1 1 1 1 Vi3
V +( )V +( + )Vo3 = (33)
R1 o1 R2 +RX3 o2 RZ3 R1 R2 +RX3
In this case, the three non-ideal voltage transfer functions, the denominator Dn (s), and
the non-ideal filter parameters of ωon and Qn were obtained as
1 1
Vo1 = Dn (s)
[s (C +C )( Vi1
1 Z1 R 3 +RX1 )
R1 //RZ3
+ (C +C )(C +C )(R +R )(R +R )(R +R ) Vi2 (34)
1 Z1 2 Z2 2 X3 3 X1 4 X2
−s (C +C )(RR1 //R Z3
V i3 ]
1 Z1 2 +RX3 )(R 3 +RX1 )

1 1
Vo2 = Dn (s)
[− (C +C )(C +C )( Vi1
1 Z1 2 Z2 R 3 +RX1 )(R 4 +RX2 )
1
+s (C +C )(R +R ) Vi2
2 Z2 4 X2
(35)
+ (C +C )(C +CR1 )( //RZ3
Vi2
1 Z1 2 Z2 R 3 +RX1 )(R 4 +RX2 )R1
R1 //RZ3
+ (C +C )(C +C )(R +R )(R +R )(R +R ) Vi3 ]
1 Z1 2 Z2 2 X3 3 X1 4 X2

1 R1 //RZ3
Vo3 = [s
Dn (s) (C 1 +CZ1 )(R 3 +RX1 )R1 i1
V
R1 //RZ3
+ (C +C )(C +C )(R +R )(R +R )(R +R ) Vi1
1 Z1 2 Z2 2 X3 3 X1 4 X2 (36)
−s (C +C )(RR1 //R + R
Z3
)( R + R )
Vi2
2 Z2 2 X3 4 X2
+s2 RR12//R Z3
+RX3 Vi3 ]

R1 //RZ3 R1 //RZ3
Dn (s) = s2 +s + (37)
(C 1 +CZ1 )(R 3 +RX1 )R1 (C 1 +CZ1 )(C 2 +CZ2 )(R 2 +RX3 )(R 3 +RX1 )(R 4 +RX2 )
s
R1 //RZ3
ωon = (38)
(C 1 +CZ1 )(C 2 +CZ2 )(R 2 +RX3 )(R 3 +RX1 )(R 4 +RX2 )
s
(C 1 +CZ1 )(R 3 +RX1 )
Qn = R1 (39)
(C 2 +CZ2 )(R 1 //RZ3 )(R 2 +RX3 )(R 4 +RX2 )
If Vi1 and Vi2 are grounded, and only Vi3 is provided as the input signal of Vin , the
four different filtering functions for non-ideal voltage outputs become
1
Vo1 R //RZ3 −s (C 1 +CZ1 )(R 3 +RX1 )
= 1 ( ) (40)
Vin R2 +RX3 Dn

R1 //RZ3
Vo2 (C 1 +CZ1 )(C 2 +CZ2 )(R 2 +RX3 )(R 3 +RX1 )(R 4 +RX2 )
= (41)
Vin Dn

Vo3 R //RZ3 s2
= 1 ( ) (42)
Vin R2 +RX3 Dn
Sensors 2023, 23, 8258 10 of 24

R6
Vo4 (R 1 //RZ3 )R5 s2 + (C 1 +CZ1 )(C 2 +CZ2 )(R 3 +RX1 )(R 4 +RX2 )R5
= ( ) (43)
Vin (R 2 +RX3 )(R 5 +R6 ) Dn
As shown in (30), the voltage-mode UAF must operate within the effective operat-
ing frequency range to minimize the effects of the non-ideal CFOA parasitic resistances
and capacitances.

3. Simulation and Experimental Results

The proposed voltage-mode UAF efficiency and flexibility were demonstrated using
commercially available off-the-shelf AD844AN ICs and on-chip design measurements to
validate the theoretical analysis. The AD844-based voltage-mode UAF has a supply voltage
of 12 V (±6 V) and a power consumption of 168 mW. The on-chip CMOS CFOA-based
VM-UAF has a supply voltage of 1.8 V (±0.9 V) and a power consumption of 3.6 mW. The
performance of the AD844-based voltage-mode UAF and on-chip CMOS CFOA-based
voltage-mode UAF was evaluated using the OrCAD PSpice software and the Synopsys
HSpice simulation design environment using TSMC 180 nm 1P6M CMOS technology,
respectively. Simulations were performed using the built-in library of AD844/AD model
parameters of OrCAD PSpice software, and OrCAD PSpice software features sensitiv-
ity/Monte Carlo analysis capabilities. The experimental setups of AD844-based voltage-
mode UAF and on-chip CMOS CFOA-based voltage-mode UAF are shown in Figures 5
and 6, respectively. Frequency domain simulations evaluate the AD844-based voltage-
mode UAF and on-chip CMOS CFOA-based voltage-mode UAF. Measurements on an
AD844-based voltage-mode UAF and a CFOA-based voltage-mode
Sensors 2023, 23, x FOR PEER REVIEW 13 of 30 UAF chip validate and
Sensors 2023, 23, x FOR PEER REVIEW 13 of 30
confirm the theoretical analysis.
Oscilloscope
Signal Generator Power Supply Tektronix DPO 2024B
Oscilloscope
Tektronix AFG1022
Signal Generator KEITHLEY 2231A-30-3
Power Supply Tektronix DPO 2024B
Tektronix AFG1022 KEITHLEY 2231A-30-3

Signal Analyzer
AgilentAnalyzer
Signal N9000A
Agilent N9000A
AD844-based VM-UAF
Network Analyzer
AD844-based VM-UAF
KEYSIGHT E5061B
Network Analyzer
KEYSIGHT E5061B
Figure 5. AD844-based voltage-mode UAF experimental setup platform.
Figure 5. AD844-based
Figure 5. AD844-based voltage-mode
voltage-mode UAF
UAF experimental experimental
setup platform. setup platform.

Figure 6. On-chip CMOS CFOA-based voltage-mode UAF experimental setup platform.

Figure 6. On-chip CMOS CFOA-based voltage-mode UAF experimental setup platform.
Figure 6. On-chip CMOS CFOA-based voltage-mode UAF experimental setup platform.
3.1. The AD844-Based Voltage-Mode UAF Simulation and Measurement Results
3.1. The AD844-Based Voltage-Mode UAF Simulation and Measurement Results
The passive components of the AD844-based voltage-mode UAF are selected as C1 =
C2 = The
100 passive
pF and components
Ri = 10 kΩ (iof=the AD844-based
1 to voltage-mode
6) with a resonance UAF of
frequency arefoselected
= 159.15askHz.
C1 =
C 2 = 100 pF and Ri = 10 kΩ (i = 1 to 6) with a resonance frequency of fo = 159.15 kHz.
Regarding the AD844 datasheet [44], the X terminal parasitic resistance of AD844 is R X =
Regarding
50 Ω. The Zthe AD844parasitic
terminal datasheet [44], theand
resistance X terminal
parasiticparasitic resistance
capacitance of AD844of AD844
are R Z =is3 R
MΩX =

50 Ω.CThe
and Z terminal parasitic resistance and parasitic capacitance of AD844 are R Z = 3 MΩ
Z = 4.5 pF, respectively. According to (30), the effective operating frequency range of
and CZ = 4.5 pF, respectively.
the AD844-based voltage-modeAccording
UAF is 1.74 to (30),
kHzthe
to effective operating
885.37 kHz. Figurefrequency
7 shows therange
simu- of
the AD844-based
lated voltage-mode
frequency spectrum of theUAF is 1.74 kHz
IBP filtering to 885.37
response kHz.
at V Figure 7 shows the simu-
o1. As shown in Figure 7, the
latedharmonic
total frequencydistortion
spectrum(THD)
of the isIBP filtering as
calculated response
0.6% forata V o1. As shown in Figure 7, the
sinusoidal input voltage of 2.4
total harmonic distortion (THD) is calculated as 0.6% for a sinusoidal input voltage of 2.4
Sensors 2023, 23, 8258 11 of 24

3.1. The AD844-Based Voltage-Mode UAF Simulation and Measurement Results

The passive components of the AD844-based voltage-mode UAF are selected as
C1 = C2 = 100 pF and Ri = 10 kΩ (i = 1 to 6) with a resonance frequency of fo = 159.15 kHz.
Regarding the AD844 datasheet [44], the X terminal parasitic resistance of AD844 is
RX = 50 Ω. The Z terminal parasitic resistance and parasitic capacitance of AD844 are
RZ = 3 MΩ and CZ = 4.5 pF, respectively. According to (30), the effective operating fre-
quency range of the AD844-based voltage-mode UAF is 1.74 kHz to 885.37 kHz. Figure 7
shows the simulated frequency spectrum of the IBP filtering response at Vo1 . As shown in
Figure 7, the total harmonic distortion (THD) is calculated as 0.6% for a sinusoidal input
voltage of 2.4 Vpp . Figure 8 shows the measured frequency spectrum of the IBP filtering
Sensors 2023, 23, x FOR PEER REVIEW 14 of 30
response at Vo1 . As shown in Figure 8, the THD is calculated as 1.68% for a sinusoidal
input voltage of 5.2 Vpp, and the measured spurious-free dynamic range is 37.62 dBc. The
gain and phase of AD844-based VM-UAF in the frequency domain simulations are shown
and
in simulation
Figures 9–12.results
Figuresof the AD844-based
13–16 also show voltage-mode UAF are
the measurements forclose
the to the theoretical
AD844-based voltage-
Sensors 2023, 23, x FOR PEER REVIEW 14 of 30
predictions.
mode UAF. The experimental and simulation results of the AD844-based voltage-mode
UAF relative to the theoretical analysis are shown in Figures 17–20. It can be seen that the
10
experimental and of
and simulation results simulation results
the AD844-based of the AD844-based
voltage-mode voltage-mode
UAF are close to the theoretical UAF are close to
0
predictions.
the theoretical predictions.
10
10
20 44.27 dBc
0
1030
2040 44.27 dBc
Gain, dB

3050
4060
Gain, dB

50
70
60
80
70
8090
100
90
100
110
110
120
120 159.15 318.3 477.45 636.6 795.75 954.9 1114 1273.2 1432.35
159.15 318.3 477.45 636.6 Frequency,
795.75 954.9 kHz
1114 1273.2 1432.35
Frequency, kHz
Figure 7. The simulated frequency spectrum for the AD844-based voltage-mode UAF at Vo1 IBP
Figure 7.7.The simulated frequency spectrum for the AD844-based voltage-mode UAF at Vo1 IBPUAF at V IBP filter.
Figure
filter. The simulated frequency spectrum for the AD844-based voltage-mode o1
filter.

37.62 dBc
37.62 dBc

Figure 8. The measured frequency spectrum for the AD844-based voltage-mode UAF at Vo1 IBP
filter, where # is the reference symbol.

Figure 8.8. The

The measured
measured frequency
frequency spectrum
spectrum for
for the
the AD844-based
AD844-based voltage-mode
voltage-mode UAF
UAF at Vo1 IBP
at V
Figure o1 IBP filter,
filter, where # is the reference symbol.
where # is the reference symbol.
Sensors 2023, 23, 8258 12 of 24
Sensors 2023, 23, x FOR PEER REVIEW 15 of 30
Sensors 2023, 23, x FOR PEER REVIEW 15 of 30

5 90
5 90
Vo1 Gain Sim.
0 Vo1 Gain Sim. 130
0 130

5 170
5 170
dBdB

 
Phase,
10 210
Gain,

Phase,
10 210
Gain,

15 250
15 250

Vo1 Phase Sim.

20 Vo1 Phase Sim. 290
20 290

25 4 5 6
330
2510 4 10 5 10 6 330
10 10
Frequency, Hz 10
Frequency, Hz
Figure
Figure 9. 9.
Simulation resultsresults
Simulation for the AD844-based voltage-modevoltage-mode
for the AD844-based UAF at Vo1 IBP filter.
UAF at Vo1 IBP filter.
Figure 9. Simulation results for the AD844-based voltage-mode UAF at Vo1 IBP filter.
5 0
5 0
Vo2 Gain Sim.
Vo2 Gain Sim.
5 45
5 45

15 90
dBdB

15 90

 
Phase,
Gain,

Phase,
Gain,

25 135
25 135

35 Vo2 Phase Sim. 180

35 Vo2 Phase Sim. 180

45 4 5 6
225
4510 4 10 5 10 6 225
10 10
Frequency, Hz 10
Frequency, Hz
Figure 10. Simulation results for the AD844-based voltage-mode UAF at Vo2 NLP filter.
Sensors 2023, 23, x FOR PEER REVIEW 16 of 30
Figure 10. Simulation results for the AD844-based voltage-mode UAF at Vo2 NLP filter.
Figure 10. Simulation results for the AD844-based voltage-mode UAF at Vo2 NLP filter.

5 180

Vo3 Gain Sim.

10 130
Gain, dB

Phase, 

25 80

40 30
Vo3 Phase Sim.

55 4 5 6
20
10 10 10
Frequency, Hz
Figure 11. Simulation results for the AD844-based voltage-mode UAF at Vo3 NHP filter.
Figure 11. Simulation results for the AD844-based voltage-mode UAF at Vo3 NHP filter.
0 150

10 90

20 30
ain, dB

hase, 
 40 30
Vo3 Phase Sim.

55 4 5 6
20
10 10 10
Sensors 2023, 23, 8258 13 of 24
Frequency, Hz
Figure 11. Simulation results for the AD844-based voltage-mode UAF at Vo3 NHP filter.

0 150

10 90

20 30
Gain, dB

Phase, 
30 30

40 90
Vo4 Phase Sim. Vo4 Gain Sim.

50 4 5 6
150
10 10 10
Frequency, Hz
Sensors 2023, 23, x FOR PEER REVIEW 17 of 30
Figure
Figure12.12.
Sensors 2023, 23, x FOR PEER REVIEW Simulation resultsresults
Simulation for the AD844-based voltage-modevoltage-mode
for the AD844-based UAF at Vo4 BR filter.
UAF at V BR filter. 17 of 30
o4

Figure 13.
Figure 13. Gain
Gain(top)
(top)and
andphase
phase(bottom) measurement
(bottom) results
measurement for the
results forAD844-based voltage-mode
the AD844-based voltage-mode
Figure
UAF at13.
Vo1Gain (top) and phase (bottom) measurement results for the AD844-based voltage-mode
IBP filter.
UAF at Vo1 IBP filter.
UAF at Vo1 IBP filter.

Figure 14. Gain (top) and phase (bottom) measurement results for the AD844-based voltage-mode
Figure 14.
Vo2Gain
UAF at14.
Figure NLP(top)
Gain (top)and
filter. andphase
phase(bottom) measurement
(bottom) results
measurement for the
results forAD844-based voltage-mode
the AD844-based voltage-mode
UAF at Vo2 NLP filter.
UAF at Vo2 NLP filter.
Sensors 2023, 23, 8258 14 of 24
Figure 14. Gain (top) and phase (bottom) measurement results for the AD844-based voltage-mode
UAF at Vo2 NLP filter.

Figure 15.
Sensors 2023, 23, x FOR PEER REVIEW
Figure 15. Gain
Gain(top)
(top)and
andphase
phase(bottom) measurement
(bottom) results
measurement for the
results forAD844-based voltage-mode
the AD844-based 18 of 30
voltage-mode
UAF at Vo3 NHP filter.
UAF at Vo3 NHP filter.
Sensors 2023, 23, x FOR PEER REVIEW 18 of 30

Figure 16.
16. Gain
Gain (top)
(top) and phase (bottom) measurement results for the
forAD844-based voltage-mode
Figure
Figure 16. Gain (top) andand phase
phase (bottom)
(bottom) measurement
measurement results forresults the AD844-based
the AD844-based voltage-mode voltage-mode
UAF at Vo4 BR filter.
UAF atVVo4o4
UAF at BRBR filter.
filter.

5
5 60
60
Vo1 Gain
Vo1 Gain Theo. Theo.
Vo1 Gain
Vo1 Gain Sim. Sim.
00 Vo1 Gain
Vo1 Gain 100
Exp. Exp. 100

55 140 140
dB
Gain,dB

Phase, 

Phase, 

10
10 180 180
Gain,

15 220
15 220
Vo1 Phase Theo.
Vo1 Phase Theo.
Vo1 Phase Sim.
20 260
20 Vo1Vo1 Phase
Phase Exp.Sim. 260
Vo1 Phase Exp.
25 4 5 6
300
10
25 10 10 300
4 5 6
10 Frequency,
10 Hz 10
Figure 17. Frequency, Hzfor the AD844-based voltage-mode UAF at Vo1
Figure 17.Ideal, simulated,
Ideal, and and
simulated, measured results
measured results for the AD844-based voltage-mode UAF at Vo1
IBP filter.
Figure 17. Ideal, simulated, and measured results for the AD844-based voltage-mode UAF at Vo1
IBP filter.
IBP filter.
Sensors 2023, 23, 8258 15 of 24
Sensors 2023, 23, x FOR PEER REVIEW 19 of 30
Sensors 2023, 23, x FOR PEER REVIEW 19 of 30

5 0
5 Vo2 Gain Theo. 0
Vo2 Gain
Vo2 Gain Theo.
Sim.
5 Vo2 Gain
Vo2 Gain Sim.
Exp. 45
5 Vo2 Gain Exp. 45

15 90
dB dB

 
15

Phase,
Gain, 90

Phase,
Gain,

25 135
25 135
Vo2 Phase Theo.
35 Vo2 Phase
Vo2 Phase Theo.
Sim. 180
35 Vo2 Phase
Vo2 Phase Sim.
Exp. 180
Vo2 Phase Exp.
45 4 5 6
225
45104 10
5
10
6
225
10 Frequency,
10 Hz 10
Frequency, Hz
Figure 18. Ideal, simulated, and measured results for the AD844-based voltage-mode UAF at Vo2
Figure 18. Ideal, simulated, and measured results for the AD844-based voltage-mode UAF at Vo2
NLP filter.
Figure 18. Ideal, simulated, and measured results for the AD844-based voltage-mode UAF at Vo2
NLP filter.
NLP filter.
5 180
5 180
Vo3 Gain Theo.
Sim.
Vo3 Gain Theo.
10 130
Vo3 Gain
Vo3 Gain Sim.
Exp.
10 130
Vo3 Gain Exp.
dB dB

 
Phase,
25 80
Gain,

25 80 Phase,
Gain,

40 Vo3 Phase Theo. 30

40 Vo3 Phase
Vo3 Phase Theo.
Sim. 30
Vo3 Phase
Vo3 Phase Sim.
Exp.
Vo3 Phase Exp.
55 4 5 6
20
5510 4
10
5
10
6
20
10 Frequency,
10 Hz 10
Figure 19. Ideal, simulated, andFrequency, Hz
measured results for the AD844-based voltage-mode UAF at Vo3
NHP filter.
Figure 19. Ideal, simulated, and measured results for the AD844-based voltage-mode UAF at Vo3
Figure 19. Ideal, simulated, and measured results for the AD844-based 20
Sensors 2023, 23, x FOR PEER REVIEW
voltage-mode
of 30
UAF at Vo3
NHP filter.
NHP filter.

0 150

10 90

20 30
Gain, dB

Phase, 

30 30

Vo4 Phase Theo. Vo4 Gain Theo.

40 Vo4 Phase Sim. Vo4 Gain Sim. 90
Vo4 Phase Exp. Vo4 Gain Exp.

50 150
4 5 6
10 10 10
Frequency, Hz
Figure 20.20.
Figure Ideal, simulated,
Ideal, and measured
simulated, results for theresults
and measured AD844-based voltage-mode
for the UAF atvoltage-mode
AD844-based Vo4 BR UAF at Vo4
filter.
BR filter.
According to (14), R1 = R3 = Ra can independently control the Q value in the AD844-
based voltage-mode UAF without affecting the parameter ωo. Thus, with fixed C1 = C2 =
300 pF and R2 = R4 = 4 kΩ, the required Ra values are 3.2 kΩ, 5.44 kΩ, 7.68 kΩ, and 10 kΩ
for selected Q values of 0.8, 1.36, 1.92, and 2.5, respectively. Figures 21–23 show the be-
havior of the AD844-based VM-UAF quality factor independently controlled by Ra when
Vi3 = Vin and Vi1 = Vi2 = 0. According to (15), R3 = R4 = Rb can independently control the
 Sensors 2023, 23, 8258 16 of 24

According to (14), R1 = R3 = Ra can independently control the Q value in the AD844-based

voltage-mode UAF without affecting the parameter ωo . Thus, with fixed C1 = C2 = 300 pF
and R2 = R4 = 4 kΩ, the required Ra values are 3.2 kΩ, 5.44 kΩ, 7.68 kΩ, and 10 kΩ for
selected Q values of 0.8, 1.36, 1.92, and 2.5, respectively. Figures 21–23 show the behavior of
the AD844-based VM-UAF quality factor independently controlled by Ra when Vi3 = Vin
and Vi1 = Vi2 = 0. According to (15), R3 = R4 = Rb can independently control the resonance
frequency value in the AD844-based voltage-mode UAF without affecting the parameter Q.
Sensors 2023, 23, x FOR PEER REVIEW
Thus, with fixed C1 = C2 = 100 pF and R1 = R2 = 10 kΩ, the required Rb values are 50 kΩ,21 of 30
24 kΩ, 12 kΩ, and 6 kΩ for selected resonant frequency values of 31.83 kHz, 66.31 kHz,
132.62 kHz, and 265.26 kΩ, respectively. Figures 24–26 show the behavior of the AD844-
based10voltage-mode UAF resonant frequency fo independently controlled by Rb when
Vi3 = Vin and Vi1 = Vi2 = 0. As shown in Figures 23 and 26, simulations and
Sensors 2023, 23, x FOR PEER REVIEW 21 of measurements
30
confirm the theoretical analysis according to (14) and (15).
5
10

0
5

0 5
Gain, dB

5
Gain, dB

10
10
15
15 Sim. (Q = 0.95)
Sim.
Sim. (Q = 0.95) (Q = 1.49)
20 Sim. (Q = 1.49)
Sim. (Q = 2.12)
20 Sim. (Q = 2.12)
Sim. (Q = 2.89)
Sim. (Q = 2.89)

25254
4 5 5 6 6
10 10 10 10 10 10
Frequency, Hz
Frequency, Hz
Figure 21.
Figure 21.The
Thesimulated quality
simulated factorfactor
quality for thefor
AD844-based voltage-mode
the AD844-based UAF.
voltage-mode UAF.
Figure 21. The simulated quality factor for the AD844-based voltage-mode UAF.

Figure 22. The measured quality factor for the AD844-based voltage-mode UAF.

Figure22.
Figure 22.The
The measured
measured quality
quality factor
factor forAD844-based
for the the AD844-based voltage-mode
voltage-mode UAF. UAF.
 Sensors 2023, 23, x FOR PEER REVIEW 22 of 30
Sensors 2023, 23, 8258 17 of 24
Sensors 2023, 23, x FOR PEER REVIEW 22 of 30

10
10 Theo. (Q = 0.8) Theo. (Q = 1.36)
5 Sim. (Q = 0.95) Sim. (Q = 1.49)
Theo. (Q==0.94)
Exp. (Q 0.8) Theo.(Q
Exp. (Q==1.46)
1.36)
5 Sim. (Q = 0.95) Sim. (Q = 1.49)
0 Exp. (Q = 0.94) Exp. (Q = 1.46)
0
5

dB dB
Gain,Gain, 5
10
Theo. (Q = 1.92)
10 Sim. (Q = 2.12)
15 Theo.(Q
Exp. (Q==2.11)
1.92)
Sim. (Q = 2.12)
15 Theo. (Q==2.11)
Exp. (Q 2.5)
20 Sim. (Q = 2.89)
Theo. (Q = 2.5)
20 Exp. (Q = 2.95)
Sim. (Q = 2.89)
25
4 5Exp. (Q = 2.95) 6
10 10 10
25
4 Frequency,
5 Hz 6
10 10 10
Figure 23. Ideal, simulated, and measured results
Frequency, Hz for independent quality factor control.
Figure
Figure23.23.
Ideal, simulated,
Ideal, and measured
simulated, results for
and measured independent
results quality factor quality
for independent control. factor control.

10 Sim. (127.35 kHz) Sim. (258.23 kHz)

10 Sim. (127.35 kHz) Sim. (258.23 kHz)
0
0
10
dB dB

10
Gain,Gain,

20
20
30
30
40
Sim. (30.41 kHz) Sim. (63.24 kHz)
40
Sim. (30.41 kHz) Sim. (63.24 kHz)
50 4 5 6
10 10 10
4
50 Frequency,5 Hz 6
Sensors 2023, 23, x FOR PEER REVIEW 10 10 10 23 of 30
Figure
Figure24.24.TheThe
simulated resonant
simulated frequencyfrequency
Frequency,
resonant for the AD844-based
Hz voltage-mode UAF
for the AD844-based without af-
voltage-mode UAF without
fecting the parameter Q.
affecting
Figure the simulated
24. The parameter Q. frequency for the AD844-based voltage-mode UAF without af-
resonant
fecting the parameter Q.

Figure 25.
Figure 25. The
The measured
measured resonant
resonantfrequency
frequencyfor
forthe
theAD844-based
AD844-basedvoltage-mode
voltage-modeUAF
UAFwithout
withoutaf-
fecting the parameter Q.
affecting the parameter Q.

Theo. (132.62 kHz) Theo. (265.26 kHz)

 Figure 25. The measured resonant frequency for the AD844-based voltage-mode UAF without af-
fecting the parameter Q.
Sensors 2023, 23, 8258 18 of 24

Theo. (132.62 kHz) Theo. (265.26 kHz)

10
Sim. (127.35 kHz) Sim. (258.23 kHz)
Exp. (123.76 kHz) Exp. (253.46 kHz)
0

10
Gain, dB

20

30

Theo. (31.83 kHz) Theo. (66.31 kHz)

40 Sim. (30.41 kHz) Sim. (63.24 kHz)
Exp. (29.16 kHz) Exp. (60.87 kHz)
50 4 5 6
10 10 10
Frequency, Hz
Figure
Figure26.26.Ideal, simulated,
Ideal, and and
simulated, measured resultsresults
measured for independent resonantresonant
for independent frequencyfrequency
control with-
control without
out affecting the parameter Q.
affecting the parameter Q.
3.2.
3.2.The
TheOn-Chip
On-ChipCMOS VM-UAF
CMOS Simulation
VM-UAF and Measurement
Simulation Results Results
and Measurement
Passive components of the on-chip CMOS CFOA-based voltage-mode UAF are de-
Passive components of the on-chip CMOS CFOA-based voltage-mode UAF are de-
signed as C1 = C2 = 15 pF and Ri = 20 kΩ (i = 1 to 6) with a resonance frequency of fo = 530.5
signed
kHz. as C
Figure = C2 =
271 shows the15 pF and
overall Ri of
layout = the
20 kΩ (i = 1 tovoltage-mode
CFOA-based 6) with a resonance
UAF and itsfrequency of
fo = micrograph
chip 530.5 kHz.with Figure
two27 shows thevoltage-mode
CFOA-based overall layout of the
UAFs. The CFOA-based voltage-mode UAF
CMOS implementation
and
of its chip
CFOA micrograph
is shown in Figure 28with
[40].two CFOA-based
In Figure voltage-mode
28, the length (L) and widthUAFs. The CMOS imple-
(W) of transis-
mentation
tors M1 to M16 of CFOA
are 0.4 μmis shown in Figure
and 75 μm, 28 [40].
the L and In Figure M17
W of transistors 28, the length
to M20 (L)μm
are 0.8 and width (W)
and 13 μm, and M1
of transistors the Ltoand
M16 W of
aretransistors
0.4 µm and M21 75
to M28
µm,are the0.4L μm
andand
W 26ofμm. Figure 29M17 to M20
transistors
Sensors 2023, 23, x FOR PEER REVIEWshows
are 0.8the
µm simulated
and 13 frequency
µm, and spectrum
the L and ofW
theof
IBP filtering response
transistors M21 toatM28
Vo1. As shown
are in24 and
0.4 µm of 3026 µm.
Figure 29, the THD is calculated as 0.25% for a sinusoidal input voltage of 0.4 V pp. Figure
Figure 29 shows the simulated frequency spectrum of the IBP filtering response at Vo1 . As
30 shows the measured frequency spectrum of the IBP filtering response at Vo1. As shown
shown in Figure 29, the THD is calculated as 0.25% for a sinusoidal input voltage of 0.4 Vpp .
in Figure 30, the THD is calculated as 1% for a sinusoidal input voltage of 0.4 V pp, and the
Figure 30spurious-free
measured shows the measured
dynamic frequency spectrum
range is 43.55 of the 31–33
dBc. Figures IBP filtering response
also show at Vo1 . As
the meas-
shown infor
urements Figure 30, the THD
the CFOA-based is calculatedUAF
voltage-mode as 1% forThe
chip. a sinusoidal input
experimental andvoltage of 0.4 Vpp ,
simulation
and the
results measured
of the spurious-free
CFOA-based dynamic
voltage-mode range
UAF chip is 43.55
relative dBc.
to the Figuresanalysis
theoretical 31–33 also
are show
shown in Figures 34–36,
the measurements for respectively.
the CFOA-based voltage-mode UAF chip. The experimental and
simulation results of the CFOA-based voltage-mode UAF chip relative to the theoretical
analysis are shown in Figures 34–36, respectively.

Figure 27. The overall layout of the CFOA-based voltage-mode UAF and its micrograph of a chip
Figure 27. The overall layout of the CFOA-based voltage-mode UAF and its micrograph of a chip
withtwo
with twoCFOA-based
CFOA-based voltage-mode
voltage-mode UAFs.
UAFs.

VDD
M15 M13 M11 M9 M7
VB1
M16 M14 M12 M10 M8
VB2
Sensors 2023, 23, 8258 19 of 24
Figure 27. The overall layout of the CFOA-based voltage-mode UAF and its micrograph of a chip
with two CFOA-based voltage-mode UAFs.

VDD
M15 M13 M11 M9 M7
VB1
M16 M14 M12 M10 M8
VB2

IY IX IZ IW
Y M20 M19 X Z M18 M17 W
M2 M4 M6

M21 M23 M25 M27

M1 M3 M5

M22 M24 M26 M28

Sensors 2023, 23, x FOR PEER REVIEW 25 of 30
VSS
Sensors 2023, 23, x FOR PEER REVIEW 25 of 30
Figure
Figure28.
28.The
TheCMOS
CMOSimplementation of CFOA.
implementation of CFOA.
0
010
1020
2030
3040
40 68.41 dBc
50 68.41 dBc
50
dBdB

60
60
Gain,

70
Gain,

70
80
80
90
90
100
100
110
110
120
120
130
130
0.53
0.53 1.06
1.061.591.592.122.12
2.65 2.65
3.18 3.18
3.71 3.71
4.24 4.24
4.77 4.77
Frequency, MHzMHz
Frequency,
Figure
Figure29.
Figure 29.The
29. Thesimulated frequency
simulated
simulated spectrum
frequency
frequency for the
spectrum
spectrum CFOA-based
forfor
thethe voltage-mode
CFOA-based
CFOA-based UAF chip
voltage-mode
voltage-mode UAFat UAF
Vchip
o1
chip
at Vo1at Vo1
IBP
IBPfilter.
filter.
IBP filter.

43.55 dBc
43.55 dBc

Figure 30. The measured frequency spectrum for the CFOA-based voltage-mode UAF chip at Vo1
IBP filter, where # is the reference symbol.
Figure 30.
Figure 30. The
The measured
measuredfrequency
frequencyspectrum forfor
spectrum thethe
CFOA-based voltage-mode
CFOA-based UAFUAF
voltage-mode chip chip
at Vo1at Vo1
IBP filter, where # is the reference symbol.
IBP filter, where # is the reference symbol.
Sensors 2023,
Sensors 23, 23,
2023, 8258x FOR PEER REVIEW 26 of 30 20 of 24
Sensors 2023, 23, x FOR PEER REVIEW 26 of 30
Sensors 2023, 23, x FOR PEER REVIEW 26 of 30

Figure 31.
Figure 31.Gain
Gain(top)(top)and
andphase (bottom)
phase simulation
(bottom) results
simulation for thefor
results CFOA-based voltage-mode
the CFOA-based voltage-mode UAF
Figure
UAF 31.at
chip Gain
Vo1 (top) and phase (bottom) simulation results for the CFOA-based voltage-mode
IBP filter.
chip at V IBP filter.
UAF chipo1at Vo1 IBP filter.
Figure 31. Gain (top) and phase (bottom) simulation results for the CFOA-based voltage-mode
UAF chip at Vo1 IBP filter.

Figure 32. Gain (top) and phase (bottom) simulation results for the CFOA-based voltage-mode
Figure
UAF
Figure 32.
32.atGain
chip Vo2 (top)
Gain NLP and phase
(top)filter.
and (bottom)
phase simulation
(bottom) results
simulation for thefor
results CFOA-based voltage-mode
the CFOA-based voltage-mode UAF
UAF chip
Figure 32. at Vo2 (top)
Gain NLP and
filter.phase (bottom) simulation results for the CFOA-based voltage-mode
chip at Vo2 NLP filter.
UAF chip at Vo2 NLP filter.

Figure 33. Gain (top) and phase (bottom) simulation results for the CFOA-based voltage-mode
Figure
UAF 33.at
chip Gain
Vo3 (top)
NHP and phase (bottom) simulation results for the CFOA-based voltage-mode
filter.
UAF chip
Figure 33. at Vo3 (top)
Gain NHPand
filter.
phase (bottom) simulation results for thefor
CFOA-based voltage-mode
Figure 33. Gain (top) and phase (bottom) simulation results the CFOA-based voltage-mode UAF
UAF chip at Vo3 NHP filter.
chip at Vo3 NHP filter.
Sensors 2023, 23, 8258 21 of 24
Sensors 2023, 23, x FOR PEER REVIEW 27 of 30
Sensors 2023, 23, x FOR PEER REVIEW 27 of 30

5 90
5 Vo1 Gain Theo. 90
Vo1 Gain Sim.
Theo.
0 Vo1 120
Vo1 Gain
Gain Exp.
Sim.
0 Vo1 Gain Exp. 120

5 150
5 150
dB dB

 
Phase,
10 180
Gain,

Phase,
10 180
Gain,

15 210
15 Vo1 Phase Theo. 210
Vo1 Phase Sim.
Theo.
20 240
Vo1
Vo1 Phase
Phase Exp.
Sim.
20 240
Vo1 Phase Exp.
25 5 6
270
25 10 10 270
5 6
10 Frequency, Hz 10
Frequency,
Figure 34. Ideal, simulated, and measured Hz for the CFOA-based voltage-mode UAF chip at
results
Figure 34. Ideal, simulated, and measured results for the CFOA-based voltage-mode UAF chip at
V o1 IBP filter.
Figure 34. Ideal, simulated, and measured results for the CFOA-based voltage-mode UAF chip at
V
Vo1
IBP filter.
o1IBP filter.
5 0
5 0

5 40
5 40

15 Vo2 Gain Theo. 80

dB dB

 
15 Vo2 Gain Sim.
Theo. 80

Phase,
Gain,

Vo2
Vo2 Gain
Gain Exp.
Sim.

Phase,
Gain,

25 Vo2 Gain Exp. 120

25 120
Vo2 Phase Theo.
35 Vo2 Phase Sim.
Theo. 160
35 Vo2
Vo2 Phase
Phase Exp.
Sim. 160
Vo2 Phase Exp.
45 5 6
200
45 10 10 200
5 6
10 Frequency, Hz 10
Frequency,
Figure 35. Ideal, simulated, and measured Hz for the CFOA-based voltage-mode UAF chip at
results
V o2 NLP filter.
Figure 35. Ideal, simulated, and measured results for the CFOA-based voltage-mode UAF chip at
Figure 35. Ideal, simulated, and measured results for the CFOA-based voltage-mode
Sensors 2023, 23, x FOR PEER REVIEW 28 of 30
UAF chip at
Vo2 NLP filter.
Vo2 NLP filter.

5 200

Vo3 Gain Theo.

5 Vo3 Gain Sim. 160
Vo3 Gain Exp.

15 120
Gain, dB

Phase, 

25 80

Vo3 Phase Theo.

35 Vo3 Phase Sim. 40
Vo3 Phase Exp.

45 5 6
0
10 10
Frequency, Hz
Figure 36. Ideal, simulated, and measured results for the CFOA-based voltage-mode UAF chip at
Figure 36. Ideal, simulated, and measured results for the CFOA-based voltage-mode UAF chip at
Vo3 NHP filter.
Vo3 NHP filter.
4. Conclusions
Three voltage-mode UAFs based on CFOA have been proposed in the technical liter-
ature, using four CFOAs, two grounded capacitors, five/six resistors, and one/two
switches [43]. This study proposes a new voltage-mode UAF to improve the convenience
and versatility of the recently introduced three voltage-mode UAF circuits [43]. The pro-
Sensors 2023, 23, 8258 22 of 24

4. Conclusions
Three voltage-mode UAFs based on CFOA have been proposed in the technical lit-
erature, using four CFOAs, two grounded capacitors, five/six resistors, and one/two
switches [43]. This study proposes a new voltage-mode UAF to improve the convenience
and versatility of the recently introduced three voltage-mode UAF circuits [43]. The pro-
posed voltage-mode UAF has three high-input and low-output impedances and can simul-
taneously realize LP, BP, HP, and BR filtering functions from the same configuration. Based
on three CFOAs, the new voltage-mode UAF can be used in HP, LP, BP, BR, LPN, HPN, and
AP without switches, providing the versatility and utility that active filter designers have ex-
pected. The proposed voltage-mode UAF has the following advantages: (1) configuration
requires no switches and uses only three CFOAs, two grounded capacitors, and six resistors,
(2) using two grounded capacitors is suitable for IC implementation, (3) the voltage-mode
second-order LP, BP, HP, BR, LPN, HPN, and AP filtering functions are implemented from
the same circuit configuration, (4) three high-input and low-output impedances are avail-
able for voltage-mode operation without needing voltage buffers, (5) the voltage-mode
second-order LP, BP, HP, and BR second-order filtering functions are realized simulta-
neously without component matching conditions, (6) there is no series capacitor at the
X-terminal of the CFOA, (7) the AP filtering function can be realized without voltage
inverters or switches, (8) the ωo and Q have independent controllability under certain cir-
cumstances, (9) the voltage-mode UAF has low active and passive sensitivity performance,
and (10) The voltage-mode UAF circuit is implemented into a single CFOA-based chip.
The CFOA-based voltage-mode UAF chip has lower power consumption and higher inte-
gration than the AD844-based filter. Experimental results from the commercially available
off-the-shelf AD844 ICs and on-chip design measurements validate the theoretical analysis.

Author Contributions: Methodology and writing—original draft preparation H.-P.C.; formal analysis
and investigation, H.-P.C., I.-C.W. and S.-F.W.; Software, L.-Y.C. and C.-Y.W.; Validation, H.-P.C.,
I.-C.W., L.-Y.C., C.-Y.W., and S.-F.W. All authors have read and agreed to the published version of
the manuscript.
Funding: This research received no external funding.
Institutional Review Board Statement: Not applicable.
Informed Consent Statement: Not applicable.
Data Availability Statement: Not applicable.
Conflicts of Interest: The authors declare no conflict of interest.

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