ANALOG ELECTRONICS LAB EEE,MRCET

7. The theoretical values of Ripple factors with and without capacitor are
calculated.
8. From the values of Vac and Vdc practical values of Ripple factors are
calculated. The practical values are compared with theoretical values.

PRECAUTIONS:

1. The primary and secondary side of the transformer should be carefully identified.
2. The polarities of all the diodes should be carefully identified.

RESULT:

VIVA QUESTIONS:

1. Define regulation of the full wave rectifier?

2. Define peak inverse voltage (PIV)? And write its value for Full-wave rectifier?
3. If one of the diode is changed in its polarities what wave form would you get?
4. Does the process of rectification alter the frequency of the waveform?
5. What is ripple factor of the Full-wave rectifier?
6. What is the necessity of the transformer in the rectifier circuit?
7. What are the applications of a rectifier?
8. What is meant by ripple and define Ripple factor?
9. Explain how capacitor helps to improve the ripple factor?
10. Can a rectifier made in INDIA (V=230v, f=50Hz) be used in USA (V=110v,
f=60Hz)?

47
ANALOG ELECTRONICS LAB EEE,MRCET

5. INPUT AND OUTPUT CHARACTERISTICS OF

TRANSISTOR CB CONFIGURATION
AIM: 1.To observe and draw the input and output characteristics of a transistor
connected in common base configuration.

APPARATUS:
Transistor, BC107 -1No.
Regulated power supply (0-30V) -1No.
Voltmeter (0-20V) - 2No.
Ammeters (0-10mA) - 2No.
Resistor, - 2No
Bread board
Connecting wires

THEORY:
A transistor is a three terminal active device. The terminals are emitter, base,
collector. In CB configuration, the base is common to both input (emitter) and output
(collector). For normal operation, the E-B junction is forward biased and C-B junction
is reverse biased. In CB configuration, IE is +ve, IC is ve and IB is ve. So,

VEB = F1 (VCB, IE) and

IC = F2 (VEB,IB)
With an increasing the reverse collector voltage, the space-charge width at the output
is
be less chance for recombination within the
base region.With increase of charge gradient with in the base region, the current of
minority carriers injected across the emitter junction increases.
The current amplification factor of CB configuration is given by,
C E

Input Resistance, ri = VBE E at Constant VCB

Output Résistance, ro = CB C at Constant IE

48
ANALOG ELECTRONICS LAB EEE,MRCET

CIRCUIT DIAGRAM:

MODEL GRAPHS:
A) INPUT CHARACTERISTICS

B) OUTPUTCHARACTERISTICS

49
ANALOG ELECTRONICS LAB EEE,MRCET

OBSERVATIONS:

A) INPUT CHARACTERISTICS:

VCB=1V VCB= = 2V VCB= 4V

VEE(V)
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

B) OUTPUT CHARACTERISTICS:

IE=10mA IE=20mA IE=30mA

Vcc(V) VCB(V) IC(mA) VCB(V) IC(mA) VCB(V) IC(mA)

PROCEDURE:
A) INPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the input characteristics, the output voltage VCE is kept constant at 0V
and for different values of VEE note down the values of IE and VBE
3. Repeat the above step keeping VCB at 2V,4V,and 6V and all the readings are
tabulated.
4. A graph is drawn between VEB and IE for constant VCB.

B) OUTPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the output characteristics, the input IE is kept constant at 0.5mA and for
different values of VCC, note down the values of IC and VCB.
3. Repeat the above step for the values of IE at 1mA, 5mA and all the readings are
tabulated.
4. A graph is drawn between VCB and Ic for constant IE

50
ANALOG ELECTRONICS LAB EEE,MRCET

PRECAUTIONS:

1. The supply voltages should not exceed the rating of the transistor.
2. Meters should be connected properly according to their polarities.

RESULT:

VIVA QUESTIONS:

1. What is transistor?
2. Draw the input and output characteristics of the transistor in CB configuration?
3. Identify various regions in output characteristics?
4. What is
5. What are the applications of CB configuration?
6. What are the input and output impedances of CB configuration?
7. (alpha)?
8. What is early effect?
9. Draw Circuit diagram of CB configuration for PNP transistor?
10. What is the power gain of CB configuration?

51
ANALOG ELECTRONICS LAB EEE,MRCET

6. INPUT AND OUTPUT CHARACTERISTICS OF

TRANSISTOR CE CONFIGURATION

AIM:

1. To draw the input and output characteristics of transistor connected in

CE configuration
2. To find also its input and output Resistances

APPARATUS:
Transistor, BC107 -1No.
Regulated power supply (0-30V) -1No.
Voltmeter (0-20V) - 2No.
Ammeters (0-20mA) -1No.
Ammeters (0- -1No.
Resistor, -1No
Resistor, -1No.
Bread board
Connecting wires

THEORY:

In common emitter configuration, input voltage is applied between base and emitter
terminals and output is taken across the collector and emitter terminals.Therefore the
emitter terminal is common to both input and output.

The input characteristics resemble that of a forward biased diode curve. This is
expected since the Base-Emitter junction of the transistor is forward biased. As
compared to CB arrangement IB increases less rapidly with V BE. Therefore input
resistance of CE circuit is higher than that of CB circuit.

The output characteristics are drawn between Ic and VCE at constant IB the
collector current varies with VCE up to few volts only. After this the collector current
becomes almost constant, and independent of VCE. The value of VCE up to which the
collector current changes with V CE is known as Knee voltage. The transistor always
operated in the region above Knee voltage, IC is always constant and is approximately
equal to IB. The current amplification factor of CE configuration is given by

C B
Input Resistance, ri = BE B( at Constant VCE
Output Résistance, ro = CE C at Constant IB

52
ANALOG ELECTRONICS LAB EEE,MRCET

CIRCUIT DIAGRAM:

MODEL GRAPHS:

A) INPUT CHARACTERISTICS:

B) OUTPUT CHARACTERSITICS:

53
ANALOG ELECTRONICS LAB EEE,MRCET

OBSERVATIONS:

A) INPUT CHARACTERISTICS:

VCE = 1V VCE = 2V VCE = 4V

VBB
VBE(V) IB VBE(V) IB VBE(V) IB

B) OUTPUT CHARACTERISTICS:

IB IB IB
S.NO
VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)

PROCEDURE:

A) INPUT CHARECTERSTICS:

1. Connect the circuit as per the circuit diagram.

2. For plotting the input characteristics the output voltage VCE is kept constant at 1V
and for different values of VBB , note down the values of I B and VBE
3. Repeat the above step by keeping VCE at 2V and 4V and tabulate all the readings.
4. plot the graph between VBE and IB for constant VCE

54
ANALOG ELECTRONICS LAB EEE,MRCET

B) OUTPUT CHARACTERSTICS:

1. Connect the circuit as per the circuit diagram

2. for plotting the output characteristics the input current IB is kept constant at
different values of VCC note down the values of IC and VCE
3. Repeat the above step by keeping IB at
readings
4. plot the graph between VCE and IC for constant IB

PRECAUTIONS:
1. The supply voltage should not exceed the rating of the transistor
2. Meters should be connected properly according to their polarities

RESULT:

VIVA QUESTIONS:

1. What is transistor?
2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics?
4. What is
5. Define current gain in CE configuration?
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. Draw diagram of CE configuration for PNP transistor?
9. What is the power gain of CE configuration?
10. What are the applications of CE configuration?

55
ANALOG ELECTRONICS LAB EEE,MRCET

7. FET CHARACTERISTICS

AIM:
a) To draw the drain and transfer characteristics of a given FET.
b) To find the drain resistance (rd
TransConductance (gm) of the given FET.

APPARATUS:

FET BFW11 -1No.

Regulated power supply (0-30V) -1No.
Voltmeter (0-20V) -2No.
Ammeter (0-20mA) -1No.
Bread board
Connecting wires

THEORY:

A FET is a three terminal device, in which current conduction is by majority carriers

only. The flow of current is controlled by means of an Electric field. The three terminals
of FET are Gate, Drain and Source. It is having the characteristics of high input
impedance and less noise, the Gate to Source junction of the FETs always reverse
biased. In response to small applied voltage from drain to source, the n-type bar acts as
sample resistor, and the drain current increases linearly with VDS. With increase in ID the
ohmic voltage drop between the source and the channel region reverse biases the
junction and the conducting position of the channel begins to remain constant. The VDS
at this instant is If the gate to source voltage (V GS) is applied
in the direction to provide additional reverse bias, the pinch off voltage ill is decreased.
In amplifier application, the FET is always used in the region beyond the pinch-off.

FET parameters:
AC Drain Resistance, rd = DS / D at constant VGS
Tran conductance, gm = ID GS at constant VDS
Amplification, µ = DS GS at constant ID
Relation between above parameters
µ = rd * gm
The drain current is given by
.
ID =IDSS (1-VGS/VP) 2

56
ANALOG ELECTRONICS LAB EEE,MRCET

CIRCUIT DIAGRAM:

MODEL GRAPH:
A) DRAIN CHARCTERISTICS:

57
ANALOG ELECTRONICS LAB EEE,MRCET

B) TRANSFER CHARACTERISTICS:

OBSERVATIONS:
A) DRAIN CHARACTERISTICS:
S.NO VGS = 0V VGS = 0.1V VGS = 0.2V

VDS(V) ID(mA) VDS(V) ID(mA) VDS(V) ID(mA)

B) TRANSFER CHARACTERISTICS:

S.NO VDS =0.5V VDS = 1V VDS = 1.5V

VGS (V) ID(mA) VGS (V) ID(mA) VGS (V) ID(mA)

58
ANALOG ELECTRONICS LAB EEE,MRCET

PROCEDURE:
1. All the connections are made as per the circuit diagram.
2. To plot the drain characteristics, keep VGS constant at 0V.
3. Vary the VDD and observe the values of V DS and ID.
4. Repeat the above steps 2, 3 for different values of V GS at 0.1V and 0.2V.
5. All the readings are tabulated.
6. To plot the transfer characteristics, keep VDS constant at 1V.
7. Vary VGG and observe the values of VGS and ID.
8. Repeat steps 6 and 7 for different values of VDS at 1.5 V and 2V.
9. The readings are tabulated.
10. From drain characteristics, calculate the values of dynamic resistance (r d)
11. From transfer characteristics, calculate the value of transconductace (gm)
12. And also calculate Amplification factor

PRECAUTIONS:

1. The three terminals of the FET must be carefully identified

2. Practically FET contains four terminals, which are called source, drain, Gate,
substrate.
3. Source and case should be short circuited.
4. Voltages exceeding the ratings of the FET should not be applied.

RESULT:

VIVA QUESTIONS:

1. What are the advantages of FET?

2. Different between FET and BJT?
3. Explain different regions of V-I characteristics of FET?
4. What are the applications of FET?
5. What are the types of FET?
6. Draw the symbol of FET?
7. What are the disadvantages of FET?
8. What are the parameters of FET?

59
ANALOG ELECTRONICS LAB EEE,MRCET

8. h- PARAMETERS OF CB CONFIGURATION
AIM: To calculate the h-parameters of transistor in C B configuration.

APPARATUS:

S.No. Name Quantity

1 Transistor BC 107 1(One) No.
2 Resistors (1K ) 2(Two) No.
3 Bread board 1(One) No.

Equipment:

S.No. Name Quantity

1 Dual DC Regulated Power supply (0 30 V) 1(One) No.
2 Digital Ammeters ( 0 200 mA) 2(Two) No.
3 Digital Voltmeter (0-20V) 2(Two) No.
4 Connecting wires (Single Strand) 2

Circuit Diagram:

60
ANALOG ELECTRONICS LAB EEE,MRCET

h Parameter model of CB transistor:

Procedure:

Input Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep output voltage VCB = 0V by varying VCC.
3. Varying VEE gradually, note down emitter current IE and emitter-base
voltage(VEE).
4. Step size is not fixed because of nonlinear curve. Initially vary VEE in steps of 0.1
V. Once the current starts increasing vary VEE in steps of 1V up to 12V.
5. Repeat above procedure (step 3) for VCB = 4V.

Output Characteristics:

1. Connect the circuit as shown in the circuit diagram.

2. Keep emitter current IE = 5mA by varying VEE.
3. Varying VCC gradually in steps of 1V up to 12V and note down collector current
IC and collector-base voltage(VCB).
4. Repeat above procedure (step 3) for I E = 10mA.

Repeat above procedure (step 3) for IE = 10mA.

Observations:

Input Characteristics
VCB = 0V VCB = 4V
VEE (Volts)
VEB (Volts) IE (mA) VEB (Volts) IE (mA)

61