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Electrical engineering

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Topics to
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(One Shot)
OPAMP & BJT
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Practice Sheet 01
EE ECE
ANALOG ELECTRONICS

Q1 The reverse-biasing of the base-collector centre tap of each end of secondary is 50 V

junction creates 'Early effect' in a bipolar and the load resistance is RL. The Mean load
transistor it shows current is 45 mA then load RL is
(A) formation of electron-hole pairs in base.
(A) 980 Ω (B) 980 kΩ
(B) reduction in effective width of base region.
(C) 9.8 kΩ (D) 98 kΩ
(C) reduction in width of collector region.
(D) the early removal of stored base charge. Q6 Given analog circuit is shown below

Q2 Under active region of BJT, change in reverse

collector saturation current due to rise in
temperature will creates
(A) Early effect (B) Thermal Runway
(C) Breakdown (D) Raman effect
This circuit called as
Q3 Under common emitter stage of BJT, the (A) Positive series clipper.
input impedance can be increased by (B) Negative series clipper.
(C) Positive Shunt clipper.
1. BJT under bootstrapping
(D) Negative Shunt clipper.
2. forming compounding structure of BJTs.
Q7 The input to a bridge rectifier is 230 V (rms), 50
The correct method is / are Hz. The ripple factor with RL of 100Ω and
(A) 1 only
capacitor filter of 1000 μF are
(B) 2 only
(A) 0.28 (B) 0.028
(C) Both 1 and 2
(C) 0.020 (D) 0.20
(D) Neither 1 nor 2
Q8 In a half-wave rectifier, if a.c. ripple frequency
Q4 Improvement in Low frequency response of RC
is 60 Hz, the what is the supply a.c. frequency
coupled amplifier is due to
at output?
(A) increasing the value of the coupling
(A) 30 Hz (B) 60 Hz
capacitor only.
(C) 120 Hz (D) 15 Hz
(B) increasing the values of the bypass
capacitor and coupling capacitor. Q9 The PIV rating of the diodes used in power
(C) increasing the value of bypass capacitor supply circuits are chosen by which one of the
only. following criteria? (Vm is the peak input supply
(D) decreasing the value of the coupling. voltage to the rectifier circuit used in the

Q5 A full wave rectifier uses two diodes. The power supply).

internal resistance of each diode is 20Ω. The (A) The diodes that are to be mand in m.

transformer RMS secondary voltage from used in a full wave rectifier bridge

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should be rated 2V rectifier If VCC = 12 V and VBE = 0.1 V, then Emitter

equal to V terminal voltage (VE) is
(B) The diodes that are to be mand in m.
(A) 19 V (B) 2 V
used in a full wave rectifier bridge
(C) 1.9 V (D) 0.19 V
should be rated V rectifier
equal to 2V Q14 A common emitter transistor amplifier has a
(C) All diodes should be rated for Vmonly. collector load of 10 kΩ. If its hfe = 100 and hre
(D) All diodes should be rated for 2Vm. ≈ hoe ≈ 0, the voltage amplification factor is –

Q10 A half-wave rectifier has an input voltage of 50. The value of hie is
240 V rms. If the step-down transformer has (A) 2 kΩ (B) 4 kΩ
turns ratio of 8 : 1, what is the peak load (C) 1 kΩ (D) 5 kΩ
voltage? Assume diode is ideal.
Q15 Assertion (A) : The small signal analysis of a
(A) 27.5 V (B) 86.5 V
transistor amplifier is done to obtain the
(C) 30.0 V (D) 42.4 V
current gain, voltage gain and the conversion
Q11 Q.12 Consider the following features of BJT efficiency of an amplifier.
Amplifier Reason (R) : The small signal analysis of a
transistor amplifier uses the small signal
1. Low voltage gain
parameters of the transistor.
2. High input impedance
(A) Both A and R are individually true and R is
3. High current gain
the correct explanation of A.
Select the correct option which contains all the (B) Both A and R are individually true but R is
given features not the correct explanation of A.
(A) Cascode BJT Amplifier (C) A is true but R is false.
(B) Darlington BJT Amplifier (D) A is false but R is true.
(C) Feedback BJT Amplifier
Q16 Which of the transistor models is most
(D) BJT Complementary Amplifier
preferred for the analysis of a transistor circuit
Q12 The components in a R-C coupled amplifier both at mid-band and at high frequencies?
control the lower cut-off frequency of the BJT (A) h-parameter model
Amplifier (B) y-parameter model
(C) T-parameter model
1. Coupling capacitor (D) Z-parameter model
2. Emitter by-pass capacitor
3. Emitter to base diffusion capacitance of Q17 Biasing of MOSFET is used

the BJT (A) to set desire DC voltage and current for

4. Stray capacitance of the circuit. Amplifier to operate.

(B) to set reduction in conduction current.
Which option is correct? (C) to set ON resistance very high.
(A) 1 and 2 (B) 2 and 3 (D) to reduce more losses during conduction.
(C) 3 and 4 (D) 1 and 4
Q18 The threshold voltage of a MOSFET is the
Q13 A transistor uses potential divider method of (A) minimum gate-to-source voltage required
biasing. R1 = 50 kΩ, R2 = 10 kΩ and RE = 1 kΩ. to establish a conducting path between the

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source and drain. interface.

(B) maximum gate-to-source voltage required 2. Depletion occurs when majority carriers are
to establish a conducting path between the repelled from the oxide-semiconductor
source and drain. interface, creating a depletion region.
(C) gate-to-drain voltage required to establish 3. Inversion occurs when the surface is
a conducting path between the source and inverted from majority carriers to minority
drain. carriers.
(D) minimum drain voltage required to Which of the following statements is/are
establish a conducting path between the correct?
source and drain. (A) 1 and 2 (B) 2 and 3
(C) 1 and 3 (D) 1, 2 and 3
Q19 The threshold voltage of mosfet is affected by
factors Q24 Consider the statement of MOS capacitance C-
(A) the doping concentration V Curve that shows different regions
(B) body bias 1. Accumulation region shows high
(C) oxide thickness capacitance.
(D) All of the above. 2. Depletion region shows decreasing
capacitance as the depletion region widens
Q20 Channel length modulation effect can be
with increasing voltage.
reduced
3. Inversion region shows low capacitance
(A) by using longer transistor length.
(high frequency) or high capacitance (low
(B) by using cascode structure.
frequency) due to the formation of the
(C) both (a) and (b)
inversion layer
(D) by using higher biasing voltage.
which of the following statements is/are
Q21 What is the main advantage of using Active correct?
load in MOSFET ? (A) 1 and 2 (B) 2 and 3
(A) It makes MOSFET more active. (C) 1 and 3 (D) 1, 2 and 3
(B) It take more chip area to make MOSFET
Q25 An amplifier will generate stable sinusoidal
compatible with other devices.
oscillations if we provide feedback such that its
(C) It does not require large DC voltage drop,
poles lie
unlike a large resistor.
(A) close to jω-axis in the right half of s-plane.
(D) It provide lower mobility as compare to
(B) at jω-axis in the s-plane.
JFET.
(C) close to jω-axis in the left half of s-plane.
Q22 Why gate drain Connected active load is used (D) anywhere in s-plane.
in MOSFET circuit
Q26 Which oscillator has fixed frequency and High
(A) To achieve high gain.
Q-factor ?
(B) To achieve high bandwidth.
(A) Colpitts Oscillator
(C) To achieve unity bandwidth.
(B) Hartley Oscillator
(D) To make circuit more stable.
(C) Crystal Oscillator
Q23 consider the statement regarding MOSFET (D) Wein bridge Oscillator
1. Accumulation occurs when majority carriers
Q27 Which factor impose a limit on the amplitude
accumulate at the oxide semiconductor
of practical oscillator ?

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(A) Phase distortion Q33 Consider a voltage series feedback with Avf =
(B) Non-linearity of onset 9.09 Rif = 110 kΩ and Rof =1.82 kΩ .Calculate
(C) Positive feedback
Gain, input impedance, output impedance
(D) Loop gain
without feedback is (if feedback factor is 0.1)
Q28 Assertion (A): to change the pulse width of a (A) 100, 11 kΩ, 20 kΩ
repetitive pulse train a monostable (B) 100, 11 kΩ, 20 kΩ
multivibrator can be used. (C) 10, 10 kΩ, 2 kΩ
Reason (R): Monostable multivibrator has a (D) 9, 110 kΩ, 1.82 kΩ
single stable state.
Q34 One transistor conducts during the positive
(A) Both A and R are true and R is the correct
half-cycle and the other during the negative
explanation of A.
half-cycle, this function is happens in which
(B) Both A and R are true but R is NOT the
type of power amplifiers
correct explanation of A.
(A) Class AB
(C) A is true but R is false.
(B) Class A
(D) A is false but R is true.
(C) Class B push pull
Q29 Circuits is used for converting a sine wave into (D) Class C push pull
a square wave ?
Q35 A power amplifier operated from 12 V battery
(A) Astable multivibration
and maximum collector current in the circuit is
(B) Monostable multivibration
166.7 mA, The output power of this power
(C) Bistable multivibration
amplifier is
(D) Schmitt trigger
(A) 2 W (B) 1 W
Q30 The feedback amplifiers are (C) 3 W (D) 4 W
(A) Oscillator and Emitter follower
Q36 Consider the following statements regarding
(B) Oscillator and Cascade Amplifier
power amplifiers
(C) Emitter follower and Power Amplifiers
(D) Cascade Amplifier and Power Amplifier 1. Class-B push-pull power amplifier gives
rise to crossover distortion.
Q31 The frequency of oscillation for an RC phase-
2. Class-C power amplifier is generally used
shift oscillator with R of 10 kΩ is 6.5 KHz. The
with tuned load for RF amplifications.
value of C is of (in each of its three RC sections,
all R are equal and all C are equal) Which of these statements are correct?
(A) 0.001 µF (B) 0.021 µF (A) Only 1
(C) 0.061 µF (D) 0.091 µF (B) Only 2
(C) Both 1 and 2
Q32 The overall gain of amplifier is 25 and voltage
(D) Neither 1 nor 2
gain of an amplifier is 100. A negative feedback
is applied with β = p. The value of p of the Q37 The maximum efficiency power amplifier is ?
amplifier is (A) Class A (B) Class B
(A) 0.03 (B) 0.003 (C) Class AB (D) Class C
(C) 0.3 (D) 3
Q38 Which one of the following power amplifiers
has the minimum efficiency?

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(A) Class A (B) Class B (C) 1, 2 and 3 (D) 1, 2, 3 and 4

(C) Class AB (D) Class C
Q44 Consider the statements regarding precision
Q39 Which one of the following statements is not rectifier circuit
correct with regard to power amplifiers?
1. It is also know as super diode.
(A) The collector current is large.
2. It can rectify low level of Ac signal
(B) They are used as the front end of multi-
3. It can rectify voltage less than cut in
stage amplifiers.
voltage of diode.
(C) They are used near the end of the multi-
stage amplifiers. The correct statement are
(D) They have a high power rating. (A) 1 and 2 (B) 2 and 3

Q40 Class A power amplifiers has efficiency (C) 1 and 3 (D) 1, 2 and 3

(A) 20% (B) 25% Q45 Bandwidth of op-amp signify

(C) 30% (D) 35%
1. The range of frequencies that an op-amp
Q41 Which power amplifier is called as harmonic
can amplify without any distortion.
generator and provide maximum conversion 2. How fast op-amp can respond to input
efficiency ? signal
(A) Class C
3. Higher bandwidth means op-amp amplify
(B) Class AB
high frequency signal which results
(C) Class B push pull higher speed of op-amp.
(D) Class D
The correct statements is
Q42 All pass filter realised using Op-amp with
(A) 1 and 2 (B) 2 and 3
resistance and capacitor, the input applied to
(C) 1 and 3 (D) 1, 2 and 3
inverting and non inverting terminal of this all
pass filter is Q46 In practical op-amp circuit
(A) Input at inverting terminal is greater than (A) Input impedance is infinite and output
input at non-inverting terminal. impedance is Zero.
(B) Input at inverting terminal is equal to input (B) Both input and output impedance are low.
at non-inverting terminal. (C) Both input and output impedance are High.
(C) Input at inverting terminal is less than input (D) Input impedance is high but output
at non-inverting terminal. impedance is low.
(D) Input at inverting terminal is half that of
Q47 A differential amplifier has error in differential
input at non-inverting terminal.
output is 1% and inputs, V1 = 1050 μV and V2 =
Q43 Active filters is relaised using 950 μV. What is the CMRR in the differential
amplifier ?
1. Op-amp
(A) 10 (B) 100
2. Resistor
(C) 1000 (D) 10000
3. Capacitors
4. Inductors Q48 How rapidly the output of an op-amp can
change in response to changes in the
The correct option is
frequency of the input signal, it signifies about
(A) 1 and 2 (B) 3 and 4

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(A) CMRR (B) Both A and R is true but R is not the correct
(B) Voltage gain explanation of A.
(C) Slew rate (C) A is true but R is false.
(D) Gain-bandwidth product (D) A is false but R is true.

Q49 Assertion (A) : Schmitt trigger has very high Q50 In which source, Op-Amp can converted
input impedance approaching towards infinity.
1. Voltage controlled Voltage Source.
Reason (R) : This high input impedance gives
2. Current controlled voltage Source.
flexibility to the circuit designer to make
3. Voltage controlled current source.
biasing easy and ensure that input is not
4. Current controlled current source.
affected by changing in output.
(A) Both A and R is true but R is the correct Which of the following options is true ?
explanation of A. (A) 1 and 2 (B) 2 and 3
(C) 3 and 4 (D) 1, 2, 3 and 4

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Answer Key
Q1 B Q26 C

Q2 B Q27 B
Q3 C Q28 B

Q4 B Q29 D

Q5 A Q30 A

Q6 C Q31 A

Q7 B Q32 A
Q8 B Q33 A

Q9 A Q34 C

Q10 D Q35 A

Q11 B Q36 C

Q12 A Q37 D
Q13 C Q38 A

Q14 A Q39 B

Q15 D Q40 B
Q16 A Q41 A

Q17 A Q42 B
Q18 A Q43 C

Q19 D Q44 D

Q20 C Q45 D
Q21 C Q46 D

Q22 B Q47 C

Q23 D Q48 C

Q24 D Q49 A

Q25 B Q50 D

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Hints & Solutions

Note: scan the QR code to watch video solution

Q1 Text Solution: Hence the correct option is (A).

Early effect causes reduction in effective base
Q6 Text Solution:
width.
Here diode is connected parallel to output so
Hence correct option is (B).
its a parallel clipper circuit and diode go on
Q2 Text Solution: during positive half cycle, it means Positive
Change in reverse saturation current while shunt clipper circuit.
temperature so increases will increase Hence correct option is (C).
collector current so that power dissipation is
Q7 Text Solution:
also increase, if power dissipation increase
Given f = 50 Hz
then temperature is also increased so this
RL = 1000 Ω
cycle continues and after some time Power
C = 1000 μF
dissipation increase after a limit so it creates
Ripple factor
permanent failure of BJT means thermal
RF = 1/(4√3 f x RL x C)
runway happens.
hence correct option is (B). RF = 0.028
Hence the correct option is (B).
Q3 Text Solution:
Bootstrapping and compounding method both Q8 Text Solution:
are used for increasing the input resistance of In HWR
BJT under CE mode. frequency remains Same fs = fr = 60 Hz
hence correct option is (C). Hence the correct option is (B).

Q4 Text Solution: Q9 Text Solution:

Low frequency response of RC coupled PIV rating if full we rectifier is 2Vm and bridge
amplifier can be improved by increasing the rectifier is Vm.
values of the bypass capacitor and coupling
Hence the correct option is (A).
capacitor, because at very low frequency both
capacitors are no longer short circuited. Q10 Text Solution:

Hence correct option is (B). Given turn ratio is 8 : 1

Secondary voltage
Q5 Text Solution:
Vs = 240/8 = 30 Volt
Given : Full wave rectifier
Vo(peak) = 30√2 = 42.4 Volt
load resistance RL
Hence the correct option is (D).
Internal resistance Ri = 20 Ω
secondary voltage = 50 V Q11 Text Solution:

mean/DC current Idc = 45 mA Darlington BJT amplifier pair offer

for full wave rectifier 1. low voltage gain Av << 1

Idc = 2Vm/(Rin + RL)π
2. High input impedance Zi ~ ∞
45m = 2 x 50√2/π(20 + RL)
3. High current gain Ai ≈ ∞
RL = 980 Ω
Hence correct option is (B).

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Q12 Text Solution: Hence the correct option is (A).

Lower cut-off frequency of RC amplifier is
Q17 Text Solution:
controlled by
Biasing a MOSFET establishes the desired DC
voltages and currents for the amplifier to
Coupling capacitor
Emitter by-pass capacitor operate.
Hence the correct option is (a).
Hence correct option is (A).
Q18 Text Solution:
Q13 Text Solution: The threshold voltage of a MOSFET is the
In this question β is not given so assume β = ∞. minimum gate-to-source voltage required to
Under potential divider biasing establish a conducting path between the
Base Voltage (VB) = VCC x R2 / (R1 + R2) source and drain terminals. It's also known as
VB = 12 x 10/60 = 2 V the turn-on voltage.
Hence the correct option is (a).
Here VBE = 0.1
VBE = VB – VE = 0.1 Q19 Text Solution:
The threshold voltage is the gate voltage at
VE = VB – 0.1 = 2 – 0.1 = 1.9 V
which a conductive band forms between the
Hence the correct option is (C).
source and drain of a MOSFET. The threshold
Q14 Text Solution: voltage is affected by factors like the doping
Given Load RC = 10 kΩ concentration, body bias, and oxide thickness.
β = 100 and AV = –50 Hence the correct option is (d).

Voltage gain of CE amplifier Q20 Text Solution:

AV = – βRC / hie The channel-length modulation effect can be
reduced by using longer transistor lengths or
hie = -βRC / AV
cascode structures.
hie = – 100 x 10 K / (–50)
Hence the correct option is (c)
hie = 20 kΩ
Q21 Text Solution:
Hence correct option is (A).
Main advantage of Active load used in MOSFET
Q15 Text Solution:
The small signal analysis of a transistor 1. The active load MOSFET presents a high

amplifier is done to obtain the current gain, small-signal impedance.

voltage gain, input and output impedances, 2. It doesn't require a large DC voltage

and not conversion efficiency of amplifier. drop, unlike a large resistor.

The small signal analysis of a transistor 3. The active load MOSFET can be

amplifier uses the small signal parameters of implemented using a gate-drain

the transistor. connected MOSFET or a current

Thus A is false but R is true. source/sink.

Hence the correct option is (D).

Hence the correct option is (C).
Q16 Text Solution:
Q22 Text Solution:
h-parameter model is used for both low
These gate drain connected active loads tend
frequency and high frequency Analysis of
to achieve large frequency bandwidths but low
transistor.
gain.

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Hence the correct option is (B). In a practical oscillator circuit, onset of non-

Q23 Text Solution: linearity limits the amplitude of the oscillations

Accumulation occurs when majority carriers which creates Amplitude distortion.

(holes in p-type, electrons in n-type) Hence the correct option is (B).

accumulate at the oxide-semiconductor Q28 Text Solution:

interface A monostable multivibrator can be used to
Happens when the gate voltage attracts alter the pulse width of a repetitive pulse train
majority carriers to the surface i.e. pulse stretcher.
Depletion occurs when majority carriers are
Monostable multivibrator has a single
repelled from the oxide-semiconductor
stable state.
interface, creating a depletion region
Happens when the gate voltage repels Thus Both A and R are true but R is NOT the
majority carriers from the surface correct explanation of A.
Inversion occurs when the surface is inverted Hence, the correct option is (B).
from majority carriers to minority carriers
Q29 Text Solution:
(electrons in p-type, holes in n-type)
Schmitt trigger is used for converting a sine
Happens when the gate voltage is strong
wave into a square wave.
enough to attract minority carriers to the
Hence the correct option is (D).
surface.
Hence the correct option is (d) Q30 Text Solution:
Oscillator and Emitter follower both are
Q24 Text Solution:
feedback amplifier.
Accumulation: high capacitance due to the
Oscillator, Satisfies Bark hausen criteria and
accumulation of majority carriers at the
use positive feedback.
surface
Depletion: decreasing capacitance as the Emitter follower is CC amplifier and give
depletion region widens with increasing voltage series feedback.
voltage
Inversion: low capacitance (high frequency) or Hence the correct option is (A).
high capacitance (low frequency) due to the Q31 Text Solution:
formation of the inversion layer. Given R = 10 kΩ and frequency of oscillation f
Hence the correct option is (d) = 6.5 kHz
Q25 Text Solution: The frequency of oscillation for RC phase shift
An amplifier will generate stable sinusoidal Oscillator is
oscillations if we provide feedback such that its f = 1/2πRC√6
poles lie to jω-axis in the s-plane because it C = 1/2πRf√6
helps to reduce the losses due to nonidealities. C = 1/2π x 10K x 6.5K x √6
Hence the correct option is (B). C = 0.001 μF
Hence the correct option is (A).
Q26 Text Solution:
Crystal oscillators are fixed frequency Q32 Text Solution:
oscillators with a high Q-factor. Given Overall gain (Af) = 25
Hence the correct option is (C). Voltage gain (AV) = 100
Q27 Text Solution: feedback factor β = p

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The overall gain is 3. Class AB push-pull power amplifier has

Af = AV / (1+AVβ) lower efficiency than Class- B push pull
25 = 100 / (1 + 100β) amplifier.
β = 0.03 = p 4. Class-C power amplifier is generally used
Hence the correct option is (A). with tuned load for RF amplifications.

Q33 Text Solution: Hence the correct option is (C).

Given Avf = 9.09, Rif = 110 kΩ, Rof = 1.82 kΩ, β =
Q37 Text Solution:
0.1 Decreasing order of efficiency,
Voltage gain with feedback
Avf = AV / (1 + AVβ) Class C > Class B > Class AB > Class A

9.09 = AV / (1 + AV x 0.1) Hence the correct option is (D).

AV = 100
Q38 Text Solution:
Input impedance with feedback Decreasing order of efficiency,
Rif = Ri (1 + AVβ)
Class C > Class B > Class AB > Class A
110 = Ri (1 + AV x 0.1)
Ri = 11 kΩ Hence correct option is (A).
Output impedance with feedback Q39 Text Solution:
Rof = Ro / (1 + AVβ)
The collector current is large
1.82 = Ro / (1 + AV x 0.1)
They cannot be used as the front end of
Ro = 20 kΩ
multistage amplifiers because of its non-
Hence the correct option is (A).
linearity.
Q34 Text Solution: They are used near the end of the multi-
Class B push pull amplifier in which one stage amplifiers.
transistor conducts during the positive half They have a high-power rating.
cycle and the other during the negative half-
cycle. Hence the correct option is (B).

Hence the correct option is (C). Q40 Text Solution:

Q35 Text Solution: Class A power amplifiers has efficiency about

Given IC (max) = 166.7 mA 25 %
Hence the correct option is (B).
Voltage (V) = 12 Volt
Output Power (P) = V x IC Q41 Text Solution:
Class C power amplifiers is called as Harmonic
P = 166.7m x 12 = 2 Watt
generator with highest possible conversion
Hence the correct option is (A).
efficiency.
Q36 Text Solution:
Hence the correct option is (A).

1. Class-A power amplifier has a minimum Q42 Text Solution:

efficiency of 25%. All pass filter is shown below,
2. Class-B push-pull power amplifier gives
rise to crossover distortion.

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Q47 Text Solution:

Given V1 = 1050 micro volt
V2 = 950 micro volt
Common mode voltage
Vc = V1 + V2/2 = 1000 micro volt
Hence the correct option is (B). Differntail mode voltage
Q43 Text Solution: Vd = V1 – V2 = 100 micro volt
Active filter is realise using opamp and Error in differential amplifier using op-amp is
resistance with capacitor. Error = 1/CMRR ( Vc/Vd)
Hence the correct option is (C). 0.01 = 1/CMRR (1000/100)
Q44 Text Solution: CMRR = 1000
Precision rectifier is used to rectify low level ac Hence the correct option is (C).
signal less than cut in voltage very accurately Q48 Text Solution:
that’s why called it Super diode. Slew rate signifies how rapidly output of op-
Hence the correct option is (D). amp can change in response to change in
Q45 Text Solution: frequency response of input signal.
Op-amp bandwidth means Hence the correct option is (C).

Q49 Text Solution:

1. The range of frequencies that an op-amp
Generally input impedance is very very high in
can amplify without any distortion.
Schmitt trigger circuit to make biasing easy
2. How fast op-amp can respond to input
and input is not affected by change in output.
signal
Hence the correct option is (A).
3. Higher bandwidth means op-amp amplify
high frequency signal which results Q50 Text Solution:
higher speed of op-amp. Op-Amp can converted into

Hence the correct option is (D). 1. Voltage controlled Voltage Source.

2. Current controlled voltage Source.
Q46 Text Solution:
3. Voltage controlled current source.
In case of practical op-amp input impedance is
4. Current controlled current source.
high but output impedance is low.
Hence the correct option is (D). Hence the correct option is (D).

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