TPS54302DDCR Texas Instruments
TPS54302DDCR Texas Instruments
TPS54302
SLVSDG6A – MAY 2016 – REVISED MAY 2016
EN EN FB 60
Co
Rfb2
50
40
Copyright © 2016, Texas Instruments Incorporated
30
VIN = 12 V, VOUT = 5 V
20 VIN = 12 V, VOUT = 3.3 V
10 VIN = 24 V, VOUT = 5 V
VIN = 24 V, VOUT = 3.3 V
0
0.001 0.01 0.1 1
Output Current (A) D100
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS54302
SLVSDG6A – MAY 2016 – REVISED MAY 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.3 Feature Description................................................... 9
2 Applications ........................................................... 1 7.4 Device Functional Modes........................................ 12
3 Description ............................................................. 1 8 Application and Implementation ........................ 13
4 Revision History..................................................... 2 8.1 Application Information............................................ 13
8.2 Typical Application ................................................. 13
5 Pin Configuration and Functions ......................... 3
6 Specifications......................................................... 4 9 Power Supply Recommendations...................... 20
6.1 Absolute Maximum Ratings ...................................... 4 10 Layout................................................................... 21
6.2 ESD Ratings.............................................................. 4 10.1 Layout Guidelines ................................................. 21
6.3 Recommended Operating Conditions....................... 4 10.2 Layout Example .................................................... 21
6.4 Thermal Information .................................................. 4 11 Device and Documentation Support ................. 22
6.5 Electrical Characteristics........................................... 5 11.1 Community Resources.......................................... 22
6.6 Timing Requirements ................................................ 5 11.2 Trademarks ........................................................... 22
6.7 Typical Characteristics .............................................. 6 11.3 Electrostatic Discharge Caution ............................ 22
7 Detailed Description .............................................. 8 11.4 Glossary ................................................................ 22
7.1 Overview ................................................................... 8 12 Mechanical, Packaging, and Orderable
7.2 Functional Block Diagram ......................................... 8 Information ........................................................... 22
4 Revision History
Changes from Original (May 2016) to Revision A Page
DDC Package
6-Pin SOT-23
Top View
GND 1 6 BOOT
SW 2 5 EN
VIN 3 4 FB
Pin Functions
PIN
TYPE (1) DESCRIPTION
NAME NO.
Supply input for the high-side NFET gate drive circuit. Connect a 0.1-μF capacitor between BOOT and
BOOT 6 O
SW pins.
EN 5 I This pin is the enable pin. Float the EN pin to enable.
FB 4 I Converter feedback input. Connect to output voltage with feedback resistor divider.
Ground pin Source terminal of low-side power NFET as well as the ground terminal for controller
GND 1 –
circuit. Connect sensitive VFB to this GND at a single point.
SW 2 O Switch node connection between high-side NFET and low-side NFET.
VIN 3 – Input voltage supply pin. The drain terminal of high-side power NFET.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VIN –0.3 30 V
Input voltage range, VI EN –0.3 7 V
FB –0.3 7 V
BOOT-SW –0.3 7 V
Output voltage range, VO SW –0.3 30 V
SW (20 ns transient) –5 30 V
Operating junction temperature, TJ –40 150 °C
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
60
1.5
1
40
0.5
0 20
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D001 Junction Temperature (qC) D002
Figure 1. Shutdown Quiescent Current vs Junction Figure 2. Non-Switching Operating Quiescent Current vs
Temperature Junction Temperature
240 80
220
70
200
High side FET Rds(on) (m:)
180
60
160
140 50
120
40
100
80
30
60
40 20
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D003
Junction Temperature (qC) D004
Figure 3. High-Side Resistance vs Junction Temperature Figure 4. Low-Side FET On Resistance vs Junction
Temperature
0.600 420
415
0.598
Switching Frequency (kHz)
Reference Voltage (mV)
410
405
0.596
400
0.594 395
390
0.592
385
0.590 380
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D005
Junction Temperature (qC) D006
Figure 5. Reference Voltage vs Junction Temperature Figure 6. Centre Switching Frequency vs Junction
Temperature
5.3 4.1
High Side Current Limit (A)
4.3 3.7
3.8 3.5
3.3 3.3
2.8 3.1
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D007
Junction Temperature (qC) D008
Figure 7. High-Side Current Limit Threshold vs Junction Figure 8. Low-Side Current Limit Threshold vs Junction
Temperature Temperature
2.20 4.5
4.3
BOOT UVLO Threshold (V)
2.10 3.9
3.7
2.05
3.5
L->H
H->L
2.00 3.3
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D009
Junction Temperature (qC) D010
Figure 9. BOOT-SW UVLO Threshold vs Junction Figure 10. VIN UVLO Threshold vs Junction Temperature
Temperature
1.3 1.70
1.65
1.26
EN Hysteresis Current (PA)
EN UVLO Threshold (V)
1.60
1.22
1.55
1.18
1.50
1.14
1.45
L->H
H->L
1.1 1.40
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D011
Junction Temperature (qC) D012
Figure 11. EN Threshold vs Junction Temperature Figure 12. EN Hysteresis Current vs Junction Temperature
7 Detailed Description
7.1 Overview
The device is a 28-V, 3-A, synchronous step-down (buck) converter with two integrated n-channel MOSFETs. To
improve performance during line and load transients the device implements a constant-frequency, peak current
mode control which reduces output capacitance. The optimized internal compensation network minimizes the
external component counts and simplifies the control loop design.
The TPS54302’s switching frequency is fixed to 400 kHz.
The TPS54302 starts switching at VIN equal to 4.5 V. The operating current is 45 μA typically when not switching
and under no load. When the device is disabled, the supply current is 2 µA typically.
The integrated 85-mΩ high-side MOSFET and 40-mΩ low-side MOSFET allow for high efficiency power supply
designs with continuous output currents up to 3 A.
The TPS54302 reduces the external component count by integrating the boot recharge diode. The bias voltage
for the integrated high-side MOSFET is supplied by an external capacitor on the BOOT to PH pins. The boot
capacitor voltage is monitored by an UVLO circuit and will turn the high-side MOSFET off when the voltage falls
below a preset threshold of 2.1 V typically.
The device minimizes excessive output overvoltage transients by taking advantage of the overvoltage
comparator. When the regulated output voltage is greater than 108% of the nominal voltage, the overvoltage
comparator is activated, and the high-side MOSFET is turned off and masked from turning on until the output
voltage is lower than 104%.
The TPS54302 device has internal 5-ms soft-start time to minimize inrush currents.
EN VIN
Thermal
UVLO
Hiccup
Ip Ih
OV comparator
-
Shutdown Hiccup
Logic Shutdown
+
EN Compatator
Boot Charge Current
Sense
+ ERROR AMPLIFIER
HS MOSFET
+ Current
Comparator
Power Stage
SW
And
Dead time VIN
20kohm
0.596V Control
Voltage 2pF
Reference Logic Regulator
2.04nF
Slope
Compensation
Soft Start
Current
Overload Sense
Maximum Oscillator LS MOSFET
Hiccup Recovery Clamp Current Limit
Shutdown
GND
Copyright © 2016, Texas Instruments Incorporated
R4
Ip Ih
EN
R5
æ VENfalling ö
VSTART ç ÷ - VSTOP
ç VENri sin g ÷
R4 = è ø
æ VENfalling ö
Ip ç 1 - ÷ +I
ç VENri sin g ÷ø h
è (1)
Where:
Ip = 0.7 µA
Ih = 1.55 µA
VENfalling = 1.19 V
VENrising = 1.22 V
R4 ´ VENfalling
R5 =
(
VSTOP - VENfalling + R4 Ip + Ih ) (2)
ILIM_LS
High-Side
MOS FET
Skip pulse when IL is Skip pulse when IL is
higher than ILIM_LS higher than ILIM_LS
Low-Side
MOS FET
T T T T
Note: T=1/Fsw
Furthermore, if an output overload condition occurs for more than the hiccup wait time, which is programmed for
512 switching cycles, the device shuts down and restarts after the hiccup time of 16384 cycles. The hiccup mode
helps to reduce the device power dissipation under severe overcurrent conditions.
Copyright © 2016, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Links: TPS54302
TPS54302
SLVSDG6A – MAY 2016 – REVISED MAY 2016 www.ti.com
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
LMIN =
(
VOUT ´ VIN(MAX ) - VOUT )
VIN(MAX ) ´ KIND ´ IOUT ´ fsw
(8)
Where:
KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output
current.
In general, the value of KIND is at the discretion of the designer; however, the following guidelines may be used.
For designs using low-ESR output capacitors, such as ceramics, a higher KIND can be used. When using higher
ESR output capacitors, KIND = 0.2 yields better results.
For this design example, use KIND = 0.35. The minimum inductor value is calculated as 9.78 μH. For this design,
a close standard value of 10 μH was selected for LMIN.
For the output filter inductor, the RMS current and saturation current ratings must not be exceeded. Use
Equation 9 to calculate the RMS inductor current (IL(RMS)).
( )
2
æ ö
2 1 ç VOUT ´ VIN(MAX ) - VOUT ÷
IL(MAX) = IOUT + ´
(MAX ) 12 ç V ÷
ç IN(MAX ) ´ LOUT ´ fSW ´ 0.8 ÷
è ø (9)
Use Equation 10 to calculate the peak inductor current (IL(PK)).
IL(PK ) = IOUT(MAX ) +
(
VOUT ´ VIN(MAX ) - VOUT )
1.6 ´ VIN(MAX ) ´ LOUT ´ fSW
(10)
Smaller or larger inductor values can be used depending on the amount of ripple current the designer wants to
allow so long as the other design requirements are met. Larger value inductors have lower AC current and result
in lower output voltage ripple. Smaller inductor values increase AC current and output voltage ripple.
2 ´ DIOUT
CO >
ƒ sw ´ DVOUT (11)
where:
∆IOUT is the change in output current
ƒSW is the switching frequency of the regulator
∆V(OUT )b is the allowable change in the output voltage
For this example, the transient load response is specified as a 5% change in the output voltage, VOUT, for a load
step of 1.5 A. For this example, ΔIOUT = 1.5 A and ΔVOUT = 0.05 × 5 = 0.25 V. Using these values results in a
minimum capacitance of 30 μF. This value does not consider the ESR of the output capacitor in the output
voltage change. For ceramic capacitors, the ESR is usually small enough to ignore in this calculation.
Equation 12 calculates the minimum output capacitance required to meet the output voltage ripple specification.
In this case, the maximum output voltage ripple is 30 mV. Under this requirement, Equation 12 yields 10.7 μF.
1 1
CO > ´
8 ´ fSW VOUTripple
Iripple (12)
where:
ƒSW is the switching frequency
V(OUTripple) is the maximum allowable output voltage ripple
I(ripple) is the inductor ripple current
Use Equation 13 to calculate the maximum ESR an output capacitor can have to meet the output-voltage ripple
specification. Equation 13 indicates the ESR should be less than 29.2 mΩ. In this case, the ESR of the ceramic
capacitor is much smaller than 29.2 mΩ.
VOUTripple
RESR <
Iripple (13)
The output capacitor can affect the crossover frequency ƒo. Considering to the loop stability and effect of the
internal parasitic parameters, choose the crossover frequency less than 40 kHz without considering the feed
forward capacitor. A simple estimation for the crossover frequency without feed forward capacitor C6 is shown in
Equation 14, assuming COUT has small ESR.
5.1
fo =
VOUT u COUT (14)
Additional capacitance deratings for aging, temperature, and DC bias should be considered which increases this
minimum value. For this example, two 22-uF 25-V, X7R ceramic capacitors are used. Capacitors generally have
limits to the amount of ripple current they can handle without failing or producing excess heat. An output
capacitor that can support the inductor ripple current must be specified. Some capacitor data sheets specify the
RMS value of the maximum ripple current. Use Equation 15 to calculate the RMS ripple current that the output
capacitor must support. For this application, Equation 15 yields 296 mA for each capacitor.
ICOUT(RMS ) =
1
´ç
æ V
(
ç OUT ´ VIN(MAX ) - VOUT ÷ )
ö
÷
12 ç VIN(MAX ) ´ LOUT ´ fSW ´ NC ÷
è ø (15)
100 0.5
90 0.4
80 0.3
60 0.1
50 0
40 -0.1
30 -0.2
20 -0.3
10 VIN = 24 V, VOUT = 5 V -0.4
VIN = 12 V, VOUT = 5 V
0 -0.5
0.001 0.01 0.1 1 6 8 10 12 14 16 18 20 22 24 26 28
Output Current (A) D013
Input Voltage (V) D014
0.8
0.4
Load Regulation (%)
0.2
0
PH = 10 V/div
-0.2
-0.4
-0.6 VIN = 24 V
VIN = 12 V
-0.8
0.1 0.6 1.1 1.6 2.1 2.6 3.1
Output Current (A) D015 Time - 2 ms/div
PH = 10 V/div PH = 10 V/div
Figure 20. Output Voltage Ripple Figure 21. Output Voltage Ripple
PH = 10 V/div PH = 10 V/div
Figure 22. Output Voltage Ripple Figure 23. Output Voltage Ripple
PH = 10 V/div
IOUT = 1 A/div
Vin = 10 V/div
Vin = 10 V/div
EN = 2 V/div EN = 2 V/div
Vout = 2 V/div
Vout = 2 V/div
Time - 4 ms/div
Time - 2 ms/div
Figure 26. Start-Up Relative to VIN Figure 27. Shutdown Relative to VIN
EN = 2 V/div EN = 2 V/div
Vout = 2 V/div
Vout = 2 V/div
10 Layout
VOUT
GND
Additional
Vias to the Vias to the
OUTPUT
GND plane internal SW
CAPACITOR BOOST
node copper
CAPACITOR
OUTPUT
INDUCTOR
GND VBST
FEEDBACK
TO ENABLE RESISTORS
SW EN CONTROL
SW node copper
pour area on internal
or bottom layer
11.2 Trademarks
Eco-mode, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 6-Feb-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
TPS54302DDCR ACTIVE SOT-23-THIN DDC 6 3000 Green (RoHS SN Level-1-260C-UNLIM -40 to 125 4302
& no Sb/Br)
TPS54302DDCT ACTIVE SOT-23-THIN DDC 6 250 Green (RoHS SN Level-1-260C-UNLIM -40 to 125 4302
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 6-Feb-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jul-2020
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jul-2020
Pack Materials-Page 2
PACKAGE OUTLINE
DDC0006A SCALE 4.000
SOT - 1.1 max height
SOT
3.05 1.100
2.55 0.847
1.75 0.1 C
B A
1.45
PIN 1
INDEX AREA
1
6
4X 0.95
3.05
1.9
2.75
4
3
0.5 0.1
6X TYP
0.3 0.0
0.2 C A B
C
0 -8 TYP
4214841/B 11/2020
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC MO-193.
www.ti.com
EXAMPLE BOARD LAYOUT
DDC0006A SOT - 1.1 max height
SOT
SYMM
6X (1.1)
1
6X (0.6) 6
SYMM
4X (0.95)
4
3
(R0.05) TYP
(2.7)
EXPOSED METAL
EXPOSED METAL
SOLDERMASK DETAILS
4214841/B 11/2020
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
DDC0006A SOT - 1.1 max height
SOT
SYMM
6X (1.1)
1
6X (0.6) 6
SYMM
4X(0.95)
4
3
(R0.05) TYP
(2.7)
4214841/B 11/2020
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
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