TPS54202

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TPS54202 4.5-V to 28-V Input, 2-A Output, EMI Friendly

Synchronous Step Down Converter

1 Features 3 Description
• 4.5-V to 28-V wide input voltage range The TPS54202 is a 4.5-V to 28-V input voltage
• Integrated 148-mΩ and 78-mΩ MOSFETs for 2-A, range, 2-A synchronous buck converter. The device
continuous output current includes two integrated switching FETs, internal loop
• Low 2-μA shutdown, 45-μA quiescent current compensation and 5-ms internal soft start to reduce
• Internal 5-mS soft start component count.
• Fixed 500-kHz switching frequency
By integrating the MOSFETs and employing the
• Frequency spread spectrum to reduce EMI
SOT-23 package, the TPS54202 achieves the high
• Advanced Eco-mode™ pulse skip
power density and offers a small footprint on the PCB.
• Peak current mode control
• Internal loop compensation Advanced Eco-mode implementation maximizes the
• Overcurrent protection for both MOSFETs with light load efficiency and reduces the power loss.
hiccup mode protection
The frequency spread spectrum operation is
• Overvoltage protection
introduced for EMI reduction.
• Thermal shutdown
• SOT-23 (6) package Cycle-by-cycle current limit in both high-side MOSFET
protects the converter in an overload condition and
2 Applications is enhanced by a low-side MOSFET freewheeling
• 12-V, 24-V distributed power-bus supply current limit which prevents current runaway. Hiccup
• Industry application mode protection is triggered if the overcurrent
– White goods condition has persisted for longer than the present
• Consumer application time.
– Audio Device Information
– STB, DTV PART NUMBER PACKAGE(1) BODY SIZE (NOM)
– Printer
TPS54202 SOT-23 (6) 1.60 mm × 2.90 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.
TPS54202 100
3 6
VIN VIN BOOT 90
Cin Cboot
Lo 80
1 2
GND SW VOUT
70
Rfb1
Efficiency (%)

5 4 60
EN EN FB
Co
Rfb2 50
40

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30
VIN = 12 V, VOUT = 5 V
Simplified Schematic 20 VIN = 12 V, VOUT = 3.3 V
10 VIN = 24 V, VOUT = 5 V
VIN = 24 V, VOUT = 3.3 V
0
0.001 0.01 0.1 1
Output Current (A) D100

Efficiency vs Output Current

An©IMPORTANT
Copyright NOTICEIncorporated
2021 Texas Instruments at the end of this data sheet addresses availability, warranty, changes, use in safety-critical
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Table of Contents
1 Features............................................................................1 8 Application and Implementation.................................. 13
2 Applications..................................................................... 1 8.1 Application Information............................................. 13
3 Description.......................................................................1 8.2 Typical Application.................................................... 13
4 Revision History.............................................................. 2 9 Power Supply Recommendations................................20
5 Pin Configuration and Functions...................................3 10 Layout...........................................................................21
6 Specifications.................................................................. 4 10.1 Layout Guidelines................................................... 21
6.1 Absolute Maximum Ratings........................................ 4 10.2 Layout Example...................................................... 21
6.2 ESD Ratings............................................................... 4 11 Device and Documentation Support..........................22
6.3 Recommended Operating Conditions.........................4 11.1 Device Support........................................................22
6.4 Thermal Information....................................................4 11.2 Receiving Notification of Documentation Updates.. 22
6.5 Electrical Characteristics.............................................5 11.3 Support Resources................................................. 22
6.6 Timing Requirements.................................................. 5 11.4 Trademarks............................................................. 22
7 Detailed Description........................................................8 11.5 Electrostatic Discharge Caution.............................. 22
7.1 Overview..................................................................... 8 11.6 Glossary.................................................................. 22
7.2 Functional Block Diagram........................................... 8 12 Mechanical, Packaging, and Orderable
7.3 Feature Description.....................................................9 Information.................................................................... 22
7.4 Device Functional Modes..........................................12

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision A (January 2017) to Revision B (April 2021) Page
• Updated the numbering format for tables, figures, and cross-references throughout the document. ................1
• Changed the max centre switching frequency from 590 kHz to 630 kHz........................................................... 5
• Changed the max low-side source current limit from 4 A to 4.3 A......................................................................5

Changes from Revision * (April 2016) to Revision A (January 2017) Page

• Changed R1 to R4 in Equation 2 ....................................................................................................................... 9
• Changed Section 7.3.11.2 ................................................................................................................................11
• Added Figure 7-3 ............................................................................................................................................. 12
• Added Note 1 to Table 8-2 ............................................................................................................................... 17

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5 Pin Configuration and Functions

GND 1 6 BOOT

SW 2 5 EN

VIN 3 4 FB

Figure 5-1. 6-Pin SOT-23 DDC Package (Top View)

Table 5-1. Pin Functions

PIN
TYPE(1) DESCRIPTION
NAME NO.
Supply input for the high-side NFET gate drive circuit. Connect a 0.1-μF capacitor between BOOT and
BOOT 6 O
SW pins.
EN 5 I This pin is the enable pin. Float the EN pin to enable.
FB 4 I Converter feedback input. Connect to output voltage with feedback resistor divider.
Ground pin. Source terminal of low-side power NFET as well as the ground terminal for controller circuit.
GND 1 –
Connect sensitive VFB to this GND at a single point.
SW 2 O Switch node connection between high-side NFET and low-side NFET.
VIN 3 – Input voltage supply pin. The drain terminal of high-side power NFET.

(1) O = Output; I = Input

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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN –0.3 30 V
Input voltage range, VI EN –0.3 7 V
FB –0.3 7 V
BOOT-SW –0.3 7 V
Output voltage range, VO SW –0.3 30 V
SW (20 ns transient) –5 30 V
Operating junction temperature, TJ –40 150 °C
Storage temperature range, Tstg –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.

6.2 ESD Ratings

VALUE UNIT

Electrostatic Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000

V(ESD) V
discharge Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN 4.5 28 V
VI Input voltage range EN –0.1 7 V
FB –0.1 7 V
BOOT-SW –0.1 7 V
VO Output voltage range
SW –0.1 28 V
TJ Operating junction temperature –40 125 °C

6.4 Thermal Information

TPS54202
THERMAL METRIC(1) DDC ( SOT23) UNIT
6 PINS
RθJA Junction-to-ambient thermal resistance 89.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 39.5 °C/W
RθJB Junction-to-board thermal resistance 14.7 °C/W
ψJT Junction-to-top characterization parameter 1.2 °C/W
ψJB Junction-to-board characterization parameter 14.7 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, .

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6.5 Electrical Characteristics

The electrical ratings specified in this section apply to all specifications in this document, unless otherwise noted. These
specifications are interpreted as conditions that do not degrade the device parametric or functional specifications for the life
of the product containing it. TJ = –40°C to +125°C, VIN = 4.5 V to 28 V, (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT SUPPLY
VIN Input voltage range 4.5 28 V
IQ Non switching quiescent current EN =5 V, VFB = 1 V 45 µA
IOFF Shut down current EN = GND 2 µA
Rising VIN 3.9 4.2 4.4 V
VIN under voltage lockout
VIN(UVLO) Falling VIN 3.4 3.7 3.9 V
Hysteresis 400 480 560 mV
ENABLE (EN PIN)
V(EN_RISING) Rising 1.21 1.28 V
Enable threshold
V(EN_FALLING) Falling 1.1 1.19 V
I(EN_INPUT) Input current VEN = 1 V 0.7 μA
I(EN_HYS) Hysteresis current VEN = 1.5 V 1.55 μA
FEEDBACK AND ERROR AMPLIFIER
VFB Feedback Voltage VIN = 12 V 0.581 0.596 0.611 V
PULSE SKIP MODE
I(SKIP) (1) Pulse skip mode peak inductor current threshold VIN = 24 V, VOUT = 5 V, L = 15 µH 300 mA
POWER STAGE
R(HSD) High-side FET on resistance TA = 25°C, VBST – SW = 6 V 148 mΩ
R(LSD) Low-side FET on resistance TA = 25°C, VIN = 12 78 mΩ
CURRENT LIMIT
I(LIM_HS) High side current limit 2.5 3.2 3.9 A
I(LIM_LS) Low side source current limit 2 3 4.3 A
OSCILLATOR
Fsw Centre switching frequency 390 500 630 kHz
OVER TEMPERATURE PROTECTION
Rising temperature 155 °C
Thermal
Hysteresis 10 °C
Shutdown(1)
Hiccup time 32768 Cycles

(1) Not production tested

6.6 Timing Requirements

MIN TYP MAX UNIT
OVER CURRENT PROTECTION
tHIC_WAIT Hiccup up wait time 512 Cycles
tHIC_RESTART Hiccup up time before restart 16384 Cycles
tSS Soft-start time 5 mS
ON TIME CONTROL
tMIN_ON (1) Minimum on time, measured at 90% to 90% and 1-A loading 110 ns

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Typical Characteristics
VIN = 12, unless otherwise specified

Non-Switching Operating Quiescent Current (PA)

2.5
80
Shutdown Quiescent Current (PA)

60
1.5

1
40

0.5

0 20
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) Junction Temperature (qC) D002
D001

Figure 6-1. Shutdown Quiescent Current vs Figure 6-2. Non-Switching Operating Quiescent
Junction Temperature Current vs Junction Temperature
240 130

220
High side FET Rds(on) (m:)

Low side FET Rds(on) (m:)

110
200

180
90
160

140
70

120

100 50
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D003
Junction Temperature (qC) D004

Figure 6-3. High-Side Resistance vs Junction Figure 6-4. Low-Side FET On Resistance vs
Temperature Junction Temperature
0.600 520

515
0.598
Switching Frequency (kHz)
Reference Voltage (mV)

510

0.596 505

500
0.594
495

490
0.592
485
0.590
480
-50 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125
Junction Temperature (qC) D005 Junction Temperature (qC) D006
Figure 6-5. Reference Voltage vs Junction Figure 6-6. Centre Switching Frequency vs
Temperature Junction Temperature

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3.5 3.3

3.4 3.2
High Side Current Limit (A)

Low Side Current Limit (A)

3.3 3.1

3.2 3.0

3.1 2.9

3.0 2.8

2.9 2.7

2.8 2.6
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D007
Junction Temperature (qC) D008

Figure 6-7. High-Side Current Limit Threshold vs Figure 6-8. Low-Side Current Limit Threshold vs
Junction Temperature Junction Temperature
2.20 4.5

4.3
BOOT UVLO Threshold (V)

VIN UVLO Threshold (V)

2.15
4.1

2.10 3.9

3.7
2.05
3.5
L->H
H->L
2.00 3.3
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) D009 Junction Temperature (qC) D010
Figure 6-9. BOOT-SW UVLO Threshold vs Junction Figure 6-10. VIN UVLO Threshold vs Junction
Temperature Temperature
1.3 1.70

1.65
1.26
EN Hysteresis Current (PA)
EN UVLO Threshold (V)

1.60
1.22
1.55
1.18
1.50

1.14
1.45
L->H
H->L
1.1 1.40
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125
Junction Temperature (qC) Junction Temperature (qC) D012
D011

Figure 6-11. EN Threshold vs Junction Figure 6-12. EN Hysteresis Current vs Junction

Temperature Temperature

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7 Detailed Description
7.1 Overview
The TPS54202 device is a 28-V, 2-A, synchronous step-down (buck) converter with two integrated n-channel
MOSFETs. To improve performance during line and load transients the device implements a constant-frequency,
peak current mode control which reduces output capacitance. The optimized internal compensation network
minimizes the external component counts and simplifies the control loop design.
The switching frequency is fixed to 500 kHz.
The device begins switching at VIN equal to 4.5 V. The operating current is 45 μA typically when not switching
and under no load. When the device is disabled, the supply current is 2 µA typically.
The integrated 148-mΩ high-side MOSFET and 78-mΩ allow for high efficiency power supply designs with
continuous output currents up to 2 A.
The device reduces the external component count by integrating the boot recharge diode. The bias voltage
for the integrated high-side MOSFET is supplied by an external capacitor on the BOOT to PH pins. The boot
capacitor voltage is monitored by an UVLO circuit and will turn the high-side MOSFET off when the voltage falls
below a preset threshold of 2.1 V typically.
The device minimizes excessive output overvoltage transients by taking advantage of the overvoltage
comparator. When the regulated output voltage is greater than 108% of the nominal voltage, the overvoltage
comparator is activated, and the high-side MOSFET is turned off and masked from turning on until the output
voltage is lower than 104%.
The device has internal 5-ms soft-start time to minimize inrush currents.
7.2 Functional Block Diagram
EN VIN

Thermal
UVLO
Hiccup
Ip Ih
OV comparator
-
Shutdown Hiccup
Logic Shutdown
+
EN Compatator
Boot Charge Current
Sense

Minimum Clamp BOOT

Boot UVLO
Pulse Skip
FB -

+ ERROR AMPLIFIER

HS MOSFET
+ Current
Comparator
Power Stage
SW
And
Dead time VIN
30 k:
0.596V Control
Voltage 2pF
Reference Logic Regulator

2.2nF
Slope
Compensation
Soft Start

Current
Overload Sense
Maximum Oscillator LS MOSFET
Hiccup Recovery Clamp Current Limit
Shutdown

GND

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7.3 Feature Description

7.3.1 Fixed-Frequency PWM Control
The device uses a fixed-frequency, peak current-mode control. The output voltage is compared through external
resistors on the FB pin to an internal voltage reference by an error amplifier. An internal oscillator initiates the
turn on of the high-side power switch. The error amplifier output is compared to the current of the high-side
power switch. When the power-switch current reaches the error amplifier output voltage level, the high side
power switch is turned off and the low-side power switch is turned on. The error amplifier output voltage
increases and decreases as the output current increases and decreases. The device implements a current-limit
by clamping the error amplifier voltage to a maximum level and also implements a minimum clamp for improved
transient-response performance.
7.3.2 Pulse Skip Mode
The TPS54202 is designed to operate in pulse skipping mode at light load currents to boost light load efficiency.
When the peak inductor current is lower than 300 mA typically, the device enters pulse skipping mode. When
the device is in pulse skipping mode, the error amplifier output voltage is clamped which prevents the high side
integrated MOSFET from switching. The peak inductor current must rise above 300 mA and exit pulse skip
mode. Since the integrated current comparator catches the peak inductor current only, the average load current
entering pulse skipping mode varies with the applications and external output filters.
7.3.3 Error Amplifier
The device has a trans-conductance amplifier as the error amplifier. The error amplifier compares the FB voltage
to the lower of the internal soft-start voltage or the internal 0596-V voltage reference. The transconductance of
the error amplifier is 240 µA/V typically. The frequency compensation components are placed internal between
the output of the error amplifier and ground.
7.3.4 Slope Compensation and Output Current
The device adds a compensating ramp to the signal of the switch current. This slope compensation prevents
sub-harmonic oscillations as the duty cycle increases. The available peak inductor current remains constant over
the full duty-cycle range.
7.3.5 Enable and Adjusting Under Voltage Lockout
The EN pin provides electrical on and off control of the device. When the EN pin voltage exceeds the threshold
voltage, the device begins operation. If the EN pin voltage is pulled below the threshold voltage, the regulator
stops switching and enters the low-quiescent (IQ) state.
The EN pin has an internal pullup-current source which allows the user to float the EN pin to enable the device.
If an application requires control of the EN pin, use open-drain or open-collector output logic to interface with the
pin.
The device implements internal undervoltage-lockout (UVLO) circuitry on the VIN pin. The device is disabled
when the VIN pin voltage falls below the internal VIN UVLO threshold. The internal VIN UVLO threshold has a
hysteresis of 480 mV.
If an application requires a higher UVLO threshold on the VIN pin, then the EN pin can be configured as shown
in Figure 7-1. When using the external UVLO function, setting the hysteresis at a value greater than 500 mV is
recommended.
The EN pin has a small pull-up current, Ip, which sets the default state of the pin to enable when no external
components are connected. The pull-up current is also used to control the voltage hysteresis for the UVLO
function because it increases by Ih when the EN pin crosses the enable threshold. Use Equation 1 and Equation
2 to calculate the values of R4 and R5 for a specified UVLO threshold.

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VIN Device

R4
Ip Ih

EN
R5

Figure 7-1. Adjustable VIN Undervoltage Lockout

æ VENfalling ö
VSTART ç ÷ - VSTOP
ç VENri sin g ÷
R4 = è ø
æ VENfalling ö
Ip ç 1 - ÷ +I
ç VENri sin g ÷ø h
è (1)

Where:
Ip = 0.7 µA
Ih = 1.55 µA
VENfalling = 1.19 V
VENrising = 1.22 V

R4 ´ VENfalling
R5 =
(
VSTOP - VENfalling + R4 Ip + Ih ) (2)

7.3.6 Safe Startup into Pre-Biased Outputs

The device has been designed to prevent the low-side MOSFET from discharging a pre-biased output. During
monotonic pre-biased startup, both high-side and low-side MOSFETs are not allowed to be turned on until the
internal soft-start voltage is higher than FB pin voltage.
7.3.7 Voltage Reference
The voltage reference system produces a precise ±2.5% voltage-reference over temperature by scaling the
output of a temperature stable bandgap circuit. The typical voltage reference is designed at 0.596 V.
7.3.8 Adjusting Output Voltage
The output voltage is set with a resistor divider from the output node to the FB pin. It is recommended to use
divider resistors with 1% tolerance or better. Start with a 100 kΩ for the upper resistor divider, use Equation 3
to calculate the output voltage. To improve efficiency at light loads consider using larger value resistors. If the
values are too high the regulator is more susceptible to noise and voltage errors from the FB input current are
noticeable.

ª R2 º
VOUT Vref u « 1»
¬ R3 ¼ (3)

7.3.9 Internal Soft-Start

The TTPS54202 device uses the internal soft-start function. The internal soft start time is set to 5 ms typically.

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7.3.10 Bootstrap Voltage (BOOT)

The TPS54202 has an integrated boot regulator and requires a 0.1-µF ceramic capacitor between the BOOT
and SW pins to provide the gate drive voltage for the high-side MOSFET. A ceramic capacitor with an X7R or
X5R grade dielectric is recommended because of the stable characteristics over temperature and voltage. To
improve drop out, the device is designed to operate at 100% duty cycle as long as the BOOT to SW pin voltage
is greater than 2.1 V typically.
7.3.11 Overcurrent Protection
The device is protected from overcurrent conditions by cycle-by-cycle current limiting on both the high-side
MOSFET and the low-side MOSFET.
7.3.11.1 High-Side MOSFET Overcurrent Protection
The device implements current mode control which uses the internal COMP voltage to control the turn off of the
high-side MOSFET and the turn on of the low-side MOSFET on a cycle-by-cycle basis. During each cycle, the
switch current and the current reference generated by the internal COMP voltage are compared. When the peak
switch current intersects the current reference the high-side switch turns off.
7.3.11.2 Low-Side MOSFET Overcurrent Protection
While the low-side MOSFET is turned on, the conduction current is monitored by the internal circuitry. During
normal operation the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side
MOSFET sourcing current is compared to the internally set low-side sourcing current-limit. The inductor valley
current is exceeded the low-side source current limit, the high-side MOSFET does not turn on and the low-side
MOSFET stays on for the next cycle. The high-side MOSFET turns on again when the inductor valley current is
below the low-side sourcing current-limit at the start of a cycle as shown in Figure 7-2.
IL

I(LIM_HS)

I(LIM_LS)

High-Side
MOS FET
Skip pulse when IL is Skip pulse when IL is
higher than I(LIM_LS) higher than I(LIM_LS)

Low-Side
MOS FET

t t t t

Figure 7-2. Overcurrent Protection for Both MOSFETs

Furthermore, if an output overload condition occurs for more than the hiccup wait time, which is programmed for
512 switching cycles, the device shuts down and restarts after the hiccup time of 16384 cycles. The hiccup mode
helps to reduce the device power dissipation under severe overcurrent conditions.

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7.3.12 Spread Spectrum

In order to reduce EMI, TPS54202 introduces frequency spread spectrum. The jittering span is ±6% of the
switching frequency with 1/512 swing frequency.
fmax = fc x (1+6%)

Center Frequency fc = 500 KHz

step

fmin = fc x (1-6%)
T = 512CLK = 512/500 KHz = 1.024 mS

Figure 7-3. Frequency Spread Spectrum Diagram

7.3.13 Output Overvoltage Protection (OVP)

The TPS54202 incorporates an overvoltage transient protection (OVTP) circuit to minimize output voltage
overshoot when recovering from output fault conditions or strong unload transients. The OVTP circuit includes
an overvoltage comparator to compare the FB pin voltage and internal thresholds. When the FB pin voltage goes
above 108% × Vref, the high-side MOSFET will be forced off. When the FB pin voltage falls below 104% × Vref,
the high-side MOSFET will be enabled again.
7.3.14 Thermal Shutdown
The internal thermal-shutdown circuitry forces the device to stop switching if the junction temperature exceeds
155°C typically. When the junction temperature drops below 145°C typically, the internal thermal-hiccup timer
begins to count. The device reinitiates the power-up sequence after the built-in thermal-shutdown hiccup time
(32768 cycles) is over.
7.4 Device Functional Modes
7.4.1 Normal Operation
When the input voltage is above the UVLO threshold, the TPS54202 can operate in their normal switching
modes. Normal continuous conduction mode (CCM) occurs when inductor peak current is above 0 A. In CCM,
the device operates at a fixed frequency.
7.4.2 Eco-mode™ Operation
The devices are designed to operate in high-efficiency pulse-skipping mode under light load conditions. Pulse
skipping initiates when the switch current falls to 0 A. During pulse skipping, the low-side FET turns off when
the switch current falls to 0 A. The switching node (the SW pin) waveform takes on the characteristics of
discontinuous conduction mode (DCM) operation and the apparent switching frequency decreases. As the
output current decreases, the perceived time between switching pulses increases.

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8 Application and Implementation

Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.

8.1 Application Information

The TPS54202 device is typically used as a step down converter, which convert an input voltage from 8 V to 28
V to fixed output voltage 5 V.
8.2 Typical Application
8.2.1 TPS54202 8-V to 28-V Input, 5-V Output Converter
U1
TPS54202
VIN = 8V ~ 28V C3
3 VIN 6
VIN BOOT
0.1PF L1 15PH
R4 1 2 VOUT = 5V,2A
C1 C2 GND SW VOUT
511lQ R1
10PF 0.1PF C4 C5
22PF 22PF
49.9 Q
5 EN FB 4
R2
C6
100lQ
75pF
R5
105lQ R3
13.3lQ

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Figure 8-1. 5-V, 2-A Reference Design

8.2.2 Design Requirements

For this design example, use the parameters in Table 8-1.
Table 8-1. Design Parameters
PARAMETER VALUE
Input voltage range 8 V to 28 V
Output voltage 5V
Output current 2A
Transient response, 1.5 A load step ΔVOUT = ±5 %
Input ripple voltage 400 mV
Output voltage ripple 30 mVpp
Switching frequency 500 kHz

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8.2.3 Detailed Design Procedure

8.2.3.1 Input Capacitor Selection
The device requires an input decoupling capacitor and a bulk capacitor is needed depending on the application.
A ceramic capacitor over 10 µF is recommended for the decoupling capacitor. An additional 0.1 µF capacitor
(C2) from VIN to GND is optional to provide additional high frequency filtering. The capacitor voltage rating
needs to be greater than the maximum input voltage.
Use Equation 4 to calculate the input ripple voltage (ΔVIN).

IOUT(MAX ) ´0.25
DVIN =
CBULK ´ fsw
(
+ IOUT(MAX ) ´ ESRMAX ) (4)

where:
• CBULK is the bulk capacitor value
• fSW is the switching frequency
• IOUT(MAX) is the maximum loading current
• ESRMAX is maximum series resistance of the bulk capacitor
The maximum RMS (root mean square) ripple current must also be checked. For worst case conditions, use
Equation 5 to calculate ICIN(RMS).

IOUT(MAX)
ICIN(RMS)
2 (5)

The actual input-voltage ripple is greatly affected by parasitic associated with the layout and the output
impedance of the voltage source. Design Requirements show the actual input voltage ripple for this circuit which
is larger than the calculated value. This measured value is still below the specified input limit of 400 mV. The
maximum voltage across the input capacitors is VIN (MAX) + ΔVIN/2. The selected bypass capacitor is rated
for 35 V and the ripple current capacity is greater than 2 A. Both values provide ample margin. The maximum
ratings for voltage and current must not be exceeded under any circumstance.
8.2.3.2 Bootstrap Capacitor Selection
A 0.1 µF ceramic capacitor must be connected between the BOOT to SW pin for proper operation. It is
recommended to use a ceramic capacitor.
8.2.3.3 Output Voltage Set Point
The output voltage of the TPS54202 device is externally adjustable using a resistor divider network. In the
application circuit of Figure 8-1 , this divider network is comprised of R2 and R3. Use Equation 6 and Equation 7
to calculate the relationship of the output voltage to the resistor divider.

R2 ´ Vref
R3 =
VOUT - Vref (6)

ª R2 º
VOUT Vref u « 1»
¬ R3 ¼ (7)

Select a value of R2 to be approximately 100 kΩ. Slightly increasing or decreasing R3 can result in closer output
voltage matching when using standard value resistors. In this design, R2 = 100 kΩ and R3 = 13.3 kΩ which
results in a 5-V output voltage. The 49.9-Ω resistor, R1, is provided as a convenient location to break the control
loop for stability testing.

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8.2.3.4 Undervoltage Lockout Set Point

The undervoltage lockout (UVLO) set point can be adjusted using the external-voltage divider network of R4 and
R5. R4 is connected between the VIN and EN pins of the TPS54202 device. R5 is connected between the EN
and GND pins. The UVLO has two thresholds, one for power up when he input voltage is rising and one for
power down or brown outs when the input voltage is falling. For the example design, the minimum input voltage
is 8 V, so the start-voltage threshold is set to 6.8 V with 1000-mV hysteresis. Use Equation 1 and Equation 2 to
calculate the values for the upper and lower resistor values of R4 and R5.
8.2.3.5 Output Filter Components
Two components must be selected for the output filter, the output inductor (LO) and CO.
8.2.3.5.1 Inductor Selection
Use Equation 8 to calculate the minimum value of the output inductor (LMIN).

LMIN =
(
VOUT ´ VIN(MAX ) - VOUT )
VIN(MAX ) ´ KIND ´ IOUT ´ fsw
(8)

Where:
KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output current.
In general, the value of KIND is at the discretion of the designer; however, the following guidelines may be used.
For designs using low-ESR output capacitors, such as ceramics, a value as high as KIND = 0.3 can be used.
When using higher ESR output capacitors, KIND = 0.2 yields better results.
For this design example, use KIND = 0.3. The minimum inductor value is calculated as 13.7 μH. For this design, a
close standard value of 15 μH was selected for LMIN.
For the output filter inductor, the RMS current and saturation current ratings must not be exceeded. Use
Equation 9 to calculate the RMS inductor current (IL(RMS)).

2
§ ·
2 1 ¨ VOUT u VIN MAX VOUT ¸
IL(MAX ) IOUT u
MAX
12 ¨¨ VIN MAX u LO u fSW u 0.8 ¸
¸
© ¹ (9)

Use Equation 10 to calculate the peak inductor current (IL(PK)).

VOUT u VIN MAX VOUT

IL(PK) IOUT MAX
1.6 u VIN MAX u LO u fSW
(10)

Smaller or larger inductor values can be used depending on the amount of ripple current the designer wants to
allow so long as the other design requirements are met. Larger value inductors have lower AC current and result
in lower output voltage ripple. Smaller inductor values increase AC current and output voltage ripple.
8.2.3.5.2 Output Capacitor Selection
Consider three primary factors when selecting the value of the output capacitor. The output capacitor determines
the modulator pole, the output voltage ripple, and how the regulator responds to a large change in load current.
The output capacitance must be selected based on the more stringent of these three criteria.
The desired response to a large change in the load current is the first criterion. The output capacitor must supply
the load with current when the regulator cannot. This situation occurs if the desired hold-up times are present for
the regulator. In this case, the output capacitor must hold the output voltage above a certain level for a specified
amount of time after the input power is removed. The regulator is also temporarily unable to supply sufficient

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output current if a large, fast increase occurs affecting the current requirements of the load, such as a transition
from no load to full load. The regulator usually requires two or more clock cycles for the control loop to notice
the change in load current and output voltage and to adjust the duty cycle to react to the change. The output
capacitor must be sized to supply the extra current to the load until the control loop responds to the load change.
The output capacitance must be large enough to supply the difference in current for 2 clock cycles while only
allowing a tolerable amount of drop in the output voltage. Use Equation 11 to calculate the minimum required
output capacitance.

2 u 'IOUT
CO !
fsw u 'VOUT (11)

where:
• ∆IOUT is the change in output current
• ƒSW is the switching frequency of the regulator
• ∆V(OUT )b is the allowable change in the output voltage
For this example, the transient load response is specified as a 5% change in the output voltage, VOUT, for a load
step of 1.5 A. For this example, ΔIOUT = 1.5 A and ΔVOUT = 0.05 × 5 = 0.25 V. Using these values results in
a minimum capacitance of 24 μF. This value does not consider the ESR of the output capacitor in the output
voltage change. For ceramic capacitors, the ESR is usually small enough to ignore in this calculation.
Equation 12 calculates the minimum output capacitance required to meet the output voltage ripple specification.
In this case, the maximum output voltage ripple is 30 mV. Under this requirement, Equation 12 yields 4.56 μF.

1 1
CO > ´
8 ´ fSW VOUTripple
Iripple (12)

where:
• ƒSW is the switching frequency
• V(OUTripple) is the maximum allowable output voltage ripple
• I(ripple) is the inductor ripple current
Use Equation 13 to calculate the maximum ESR an output capacitor can have to meet the output-voltage ripple
specification. Equation 13 indicates the ESR should be less than 54.8 mΩ. In this case, the ESR of the ceramic
capacitor is much smaller than 54.8 mΩ.

VOUTripple
RESR <
Iripple (13)

The output capacitor can affect the crossover frequency ƒo. Considering to the loop stability and effect of the
internal parasitic parameters, choose the crossover frequency less than 40 kHz without considering the feed
forward capacitor. A simple estimation for the crossover frequency without feed forward capacitor C6 is shown in
Equation 14, assuming COUT has small ESR.

3.95
fo =
VOUT u COUT (14)

Additional capacitance deratings for aging, temperature, and DC bias should be considered which increases
this minimum value. For this example, two 22-uF 25-V, X7R ceramic capacitors are used. Capacitors generally
have limits to the amount of ripple current they can handle without failing or producing excess heat. An output
capacitor that can support the inductor ripple current must be specified. Some capacitor data sheets specify the
RMS value of the maximum ripple current. Use Equation 15 to calculate the RMS ripple current that the output
capacitor must support. For this application, Equation 15 yields 79 mA for each capacitor.

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§V ·
1 ¨ OUT u VIN MAX VOUT ¸
ICOUT RMS u¨ ¸
12 ¨ VIN MAX u LO u fSW u NC ¸
© ¹ (15)

8.2.3.5.3 Feed-Forward Capacitor

The TPS54202 device is internally compensated and the internal compensation network is composed of two
capacitors and one resister shown on the block diagram. Depending on the VOUT, if the output capacitor COUT
is dominated by low ESR (ceramic types) capacitors, it could result in low phase margin. To improve the phase
boost an external feedforward capacitor C6 can be added in parallel with R2. C6 is chosen such that phase
margin is boosted at the crossover frequency.
Equation 16 for C6 was tested:

1 1
C6 = u
2Sfo R2 (16)

For this design, C6 = 75 pF. C6 is not needed when COUT has high ESR, and C6 calculated from Equation 16
should be reduced with medium ESR. Table 8-2 can be used as a starting point.
Table 8-2. Recommended Component Values
VOUT (V) L (µH)1 COUT(µF) R2 (kΩ) R3 (kΩ) C6 (pF)
1.8 5.6 66 100 49.9 47
2.5 8.2 44 100 31.6 33
3.3 10 44 100 22.1 56
5 15 44 100 13.3 75
12 22 44 100 5.23 100

1. Based on VIN = 28 V

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8.2.4 Application Curves

100 0.5
90 0.4
80 0.3

Line Regulation (%)

70 0.2
Efficiency (%)

60 0.1
50 0
40 -0.1
30 -0.2
20 -0.3
10 VIN = 24 V, VOUT = 5 V -0.4
VIN = 12 V, VOUT = 5 V
0 -0.5
0.001 0.01 0.1 1 6 8 10 12 14 16 18 20 22 24 26 28
Output Current (A) Input Voltage (V) D014
D013

Figure 8-2. Efficiency Figure 8-3. Line Regulation

0.5
0.4
VOUT = 200 mV/div (ac coupled)
0.3
Load Regulation (%)

0.2
0.1
0
-0.1 PH = 10 V/div

-0.2
-0.3
-0.4 VIN = 24 V
VIN = 12 V
-0.5
0.1 0.6 1.1 1.6 2.1
Output Current (A) D015 Time - 2 ms/div

Figure 8-4. Load Regulation IOUT = 2 A

Figure 8-5. Input Voltage Ripple

VOUT = 20 mV/div (ac coupled) VOUT = 20 mV/div (ac coupled)

PH = 10 V/div PH = 10 V/div

Time - 4 ms/div Time - 40 ms/div

IOUT = 0 A IOUT = 10 mA

Figure 8-6. Output Voltage Ripple Figure 8-7. Output Voltage Ripple

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VOUT = 20 mV/div (ac coupled) VOUT = 10 mV/div (ac coupled)

PH = 10 V/div PH = 10 V/div

Time - 4 ms/div Time - 2 ms/div

IOUT = 100 mA IOUT = 2 A

Figure 8-8. Output Voltage Ripple Figure 8-9. Output Voltage Ripple

VOUT = 100 mV/div (ac coupled) VOUT = 100 mV/div (ac coupled)

IOUT = 0.5 A/div

IOUT = 0.5 A/div
0.5 A to 1.5 A Load Step,
Slew Rate = 250 mA/msec
0.1 A to 1 A Load Step,
Slew Rate = 250 mA/msec

Time - 200 ms/div Time - 200 ms/div

0.1 to 1 A 0.5 to 1.5 A

Figure 8-10. Transient Response Figure 8-11. Transient Response

VIN = 10 V/div VIN = 10 V/div

EN = 2 V/div EN = 2 V/div

VOUT = 2 V/div

VOUT = 2 V/div

Time - 2 ms/div Time - 2 ms/div

Figure 8-12. Start-Up Relative to VIN Figure 8-13. Shutdown Relative to VIN

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VIN = 10 V/div VIN = 10 V/div

EN = 2 V/div

EN = 2 V/div

VOUT = 2 V/div

VOUT = 2 V/div

Time - 2 ms/div Time - 2 ms/div

Figure 8-14. Start-Up Relative to EN Figure 8-15. Shutdown Relative to EN

9 Power Supply Recommendations

The devices are designed to operate from an input voltage supply range between 4.5 V and 28 V. This
input supply must be well regulated. If the input supply is located more than a few inches from the device
or converter, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. An
electrolytic capacitor with a value of 47 µF is a typical choice.

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10 Layout
10.1 Layout Guidelines
• VIN and GND traces should be as wide as possible to reduce trace impedance. The wide areas are also of
advantage from the view point of heat dissipation.
• The input capacitor and output capacitor should be placed as close to the device as possible to minimize
trace impedance.
• Provide sufficient vias for the input capacitor and output capacitor.
• Keep the SW trace as physically short and wide as practical to minimize radiated emissions.
• Do not allow switching current to flow under the device.
• A separate VOUT path should be connected to the upper feedback resistor.
• Make a Kelvin connection to the GND pin for the feedback path.
• Voltage feedback loop should be placed away from the high-voltage switching trace, and preferably has
ground shield.
• The trace of the VFB node should be as small as possible to avoid noise coupling.
• The GND trace between the output capacitor and the GND pin should be as wide as possible to minimize its
trace impedance.
10.2 Layout Example

VOUT
GND
Additional
Vias to the Vias to the
OUTPUT
GND plane internal SW
CAPACITOR BOOST
node copper
CAPACITOR

OUTPUT
INDUCTOR

GND VBST
FEEDBACK
TO ENABLE RESISTORS
SW EN CONTROL

Vias to the VFB

VIN VIN
internal SW
node copper INPUT BYPAS
CAPACITOR

SW node copper
pour area on internal
or bottom layer

Figure 10-1. Board Layout

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11 Device and Documentation Support

11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
Eco-mode™ and TI E2E™ are trademarks of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.

11.6 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

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 PACKAGE OPTION ADDENDUM

www.ti.com 24-Dec-2022

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)

TPS54202DDCR ACTIVE SOT-23-THIN DDC 6 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 4202 Samples

TPS54202DDCT ACTIVE SOT-23-THIN DDC 6 250 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 4202 Samples

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 24-Dec-2022

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 12-Oct-2023

TAPE AND REEL INFORMATION

REEL DIMENSIONS TAPE DIMENSIONS

K0 P1

B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers

Reel Width (W1)

QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE

Sprocket Holes

Q1 Q2 Q1 Q2

Q3 Q4 Q3 Q4 User Direction of Feed

Pocket Quadrants

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS54202DDCR SOT-23- DDC 6 3000 180.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
THIN
TPS54202DDCT SOT-23- DDC 6 250 180.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
THIN

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 12-Oct-2023

TAPE AND REEL BOX DIMENSIONS

Width (mm)
H
W

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS54202DDCR SOT-23-THIN DDC 6 3000 210.0 185.0 35.0
TPS54202DDCT SOT-23-THIN DDC 6 250 210.0 185.0 35.0

Pack Materials-Page 2
 PACKAGE OUTLINE
DDC0006A SCALE 4.000
SOT-23 - 1.1 max height
SMALL OUTLINE TRANSISTOR

3.05 1.1
2.55 0.7
1.75 0.1 C
B A
1.45
PIN 1
INDEX AREA

1
6

4X 0.95

3.05
1.9
2.75

4
3

0.5 0.1
6X TYP
0.3 0.0
0.2 C A B

C
0 -8 TYP

SEATING PLANE 0.25

0.20
TYP GAGE PLANE
0.12
0.6
TYP
0.3

4214841/C 04/2022

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC MO-193.

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 EXAMPLE BOARD LAYOUT
DDC0006A SOT-23 - 1.1 max height
SMALL OUTLINE TRANSISTOR

SYMM
6X (1.1)
1

6X (0.6) 6

SYMM

4X (0.95)

4
3

(R0.05) TYP
(2.7)

LAND PATTERN EXAMPLE

EXPLOSED METAL SHOWN
SCALE:15X

METAL UNDER SOLDER MASK

SOLDER MASK METAL SOLDER MASK OPENING
OPENING

EXPOSED METAL

EXPOSED METAL

0.07 MAX 0.07 MIN

ARROUND ARROUND

NON SOLDER MASK SOLDER MASK

DEFINED DEFINED

SOLDERMASK DETAILS

4214841/C 04/2022

NOTES: (continued)

4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

www.ti.com
 EXAMPLE STENCIL DESIGN
DDC0006A SOT-23 - 1.1 max height
SMALL OUTLINE TRANSISTOR

SYMM
6X (1.1)
1

6X (0.6) 6

SYMM

4X(0.95)

4
3

(R0.05) TYP
(2.7)

SOLDER PASTE EXAMPLE

BASED ON 0.125 THICK STENCIL
SCALE:15X

4214841/C 04/2022

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.

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