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BJT Mosfet

The document summarizes the architecture and operation of bipolar junction transistors (BJTs) and metal-oxide semiconductor field-effect transistors (MOSFETs). It describes the three doped semiconductor regions that make up a BJT, and how there are two types - npn and pnp. It also explains that BJTs have two pn junctions, the base-emitter and base-collector junctions. The document then covers the operating regions, biasing, and use of BJTs as amplifiers and switches. It concludes by summarizing the architecture of MOSFETs, including depletion-type and enhancement-type devices, and their use in biasing circuits and amplifiers.

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DheerLakhotia
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331 views31 pages

BJT Mosfet

The document summarizes the architecture and operation of bipolar junction transistors (BJTs) and metal-oxide semiconductor field-effect transistors (MOSFETs). It describes the three doped semiconductor regions that make up a BJT, and how there are two types - npn and pnp. It also explains that BJTs have two pn junctions, the base-emitter and base-collector junctions. The document then covers the operating regions, biasing, and use of BJTs as amplifiers and switches. It concludes by summarizing the architecture of MOSFETs, including depletion-type and enhancement-type devices, and their use in biasing circuits and amplifiers.

Uploaded by

DheerLakhotia
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Architecture of BJTs

The bipolar junction transistor (BJT) is


constructed with three doped semiconductor
regions separated by two pn junctions
Regions are called emitter, base and collector
Architecture of BJTs
There are two types of BJTs, the npn and pnp
The two junctions are termed the base-emitter
junction and the base-collector junction
The term bipolar refers to the use of both holes and
electrons as charge carriers in the transistor structure
In order for the transistor to operate properly, the two
junctions must have the correct dc bias voltages
the base-emitter (BE) junction is forward
biased(>=0.7V for Si, >=0.3V for Ge)
the base-collector (BC) junction is reverse biased
FIGURE Transistor symbols.
Basic circuits of BJT
Operation of BJTs
BJT will operates in one of following
four region
Cutoff region (for digital circuit)
Saturation region (for digital circuit)
Linear (active) region (to be an
amplifier)
Breakdown region (always be a
disaster)
Operation of BJTs
DC Analysis of BJTs
Transistor Currents:
I E = IC + IB
alpha (DC)
IC = DCIE
beta (DC)
IC = DCIB
DC typically has a value between 20 and 200
DC Analysis of BJTs
DC voltages for the biased transistor:
Collector voltage
VC = VCC - ICRC
Base voltage
VB = VE + VBE

for silicon transistors, VBE = 0.7 V


for germanium transistors, VBE = 0.3 V
Q-point

The base current, IB, is


established by the
base bias
The point at which the
base current curve
intersects the dc load
line is the quiescent or
Q-point for the circuit
Q-point
DC Analysis of BJTs
The voltage divider
biasing is widely
used
Input resistance is:
RIN DCRE
The base voltage is
approximately:
VB VCCR2/(R1+R2)
BJT as an amplifier
Class A Amplifiers

Class B Amplifiers
BJT Class A Amplifiers

In a class A amplifier, the transistor conducts


for the full cycle of the input signal (360)
used in low-power applications
The transistor is operated in the active region,
between saturation and cutoff
saturation is when both junctions are forward biased
the transistor is in cutoff when IB = 0
The load line is drawn on the collector curves
between saturation and cutoff
BJT Class A Amplifiers
BJT Class A Amplifiers
Three biasing mode for class A
amplifiers
common-emitter (CE) amplifier
common-collector (CC) amplifier
common-base (CB) amplifier
BJT Class A Amplifiers
A common-emitter (CE) amplifier
capacitors are used for coupling ac without
disturbing dc levels
BJT Class A Amplifiers
A common-collector (CC) amplifier
voltage gain is approximately 1, but current gain
is greater than 1
BJT Class A Amplifiers

The third configuration is the common-


base (CB)
the base is the grounded (common)
terminal
the input signal is applied to the emitter
output signal is taken off the collector
output is in-phase with the input
voltage gain is greater than 1
current gain is always less than 1
BJT Class B Amplifiers
When an amplifier is biased such that it operates
in the linear region for 180 of the input cycle and
is in cutoff for 180, it is a class B amplifier
A class B amplifier is more efficient than a
class A
In order to get a linear reproduction of the input
waveform, the class B amplifier is configured in a
push-pull arrangement
The transistors in a class B amplifier must be
biased above cutoff to eliminate crossover
distortion
BJT Class B Amplifiers
The BJT as a Switch
When used as an electronic switch, a
transistor normally is operated alternately
in cutoff and saturation
A transistor is in cutoff when the base-emitter
junction is not forward-biased. VCE is
approximately equal to VCC
When the base-emitter junction is forward-
biased and there is enough base current to
produce a maximum collector current, the
transistor is saturated
The BJT as a Switch
An example -- NOR
Architecture of MOS Field-
Effect Transistors (FETs)
The metal-oxide semiconductor field-
effect transistor (MOSFET) : the gate is
insulated from the channel by a silicon
dioxide (SiO2) layer
Architecture of MOS Field-Effect
Transistors (FETs)
Two types of MOSFETs
depletion type (D-MOSFETs) have a physical
channel between Drain and Source, with no
voltage applied to the Gate
enhancement type (E-MOSFETs) have no
physical Drain-Source channel
Architecture of MOS Field-
Effect Transistors (FETs)
D-MOSFET
Channel may be
enhanced or
restricted by gate
voltage

E-MOSFET
Channel is created
by gate voltage
Simplified
symbol
Biasing Circuits
FET Amplifiers
Voltage gain of a FET is determined by the
transconductance (gm) with units of
Siemens (S)
g m = Id / V g
The D-MOSFET may also be zero-biased
The E-MOSFET requires a voltage-divider-bias
All FETs provide extremely high input
resistance
Principle of MOSFET
for E-MOS (n-channel)
(+)
Principle of MOSFET
for E-MOS (n-channel)
VTN The threshold voltage

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