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Gto

1. The document discusses several types of power semiconductor devices - GTO, PUT, SUS, SCS, ASCR, and RCT. 2. GTO stands for gate turn-off thyristor, PUT for programmable unijunction transistor, SUS for Silicon Unilateral Switch, and SCS for Silicon Controlled Switch. 3. Each device has different characteristics such as number of terminals, turn-on and turn-off mechanisms, and typical applications. The document provides brief descriptions and comparisons of these semiconductor components.

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umeshgangwar
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266 views15 pages

Gto

1. The document discusses several types of power semiconductor devices - GTO, PUT, SUS, SCS, ASCR, and RCT. 2. GTO stands for gate turn-off thyristor, PUT for programmable unijunction transistor, SUS for Silicon Unilateral Switch, and SCS for Silicon Controlled Switch. 3. Each device has different characteristics such as number of terminals, turn-on and turn-off mechanisms, and typical applications. The document provides brief descriptions and comparisons of these semiconductor components.

Uploaded by

umeshgangwar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Submitted to Submitted by

Mrs. Shimi S.L. (AP) Kunal Kishor


EE Department Roll no. -132511
GTO Stands for gate turn-off thyristor. It is
three-terminal power semiconductor device
that belongs to a thyristor family with a four-
layer structure.
A GTO can easily be turned off by a negative
gate pulse of appropriate amplitude.
Thus a GTO is a pnpn
device that can be turned-on by a positive gate
current and turned-off by a negative gate
current at its gate cathode terminals.
PUT stands for programmable unijuction
transistor. It is a pnpn device like an SCR.The
major difference is that gate is connected to n-type
material near the anode.
PUT is mainly used in time-delay, logic and SCR
trigger circuits.Its largest rating is about 200V and
1A.
In a PUT G is always biased positive with
respect to cathode.
When anode voltage exceeds the gate voltage by
about 0.7 V junction J1 gets forward biased and
PUT turns on.
When anode voltage becomes less
than gate voltage PUT is turned off.
SUS is stands for Silicon Unilateral Switch.A
SUS is similar to a PUT but with an inbuilt low-
voltage avalanche diode between gate and
cathode.
Because of the presence of diode SUS
turns on for a fixed anode-to-cathode voltage
unlike an SCR whose trigger voltage and/or
current vary widely with changes in ambient
temperature.
SUS is used mainly in timing, logic and trigger
circuits.Its ratings are about 20V and 0.5A.
SCS stands for Silicon Controlled Switch.SCS is
a tetrode i.e four electrode thyristor.
It has two gates one anode gate (AG) like a
PUT and another cathode gate(KG) like an
SCR.
When a negative pulse is applied to gate AG
junction J1 is forward biased and SCS is turned
on.A positive pulse at AG will reverse bias
junction J1 and turns off the SCS.
A positive pulse at gate KG turns on the device
(just like an SCR) and a negative pulse at KG
turns it off (just like a GTO).
Its ratings are about 100V and 200 mA.This can
be operated like an OR gate.
Its applications include:-
(a) timing, logic and triggering circuits
(b) pulse generators
(c) voltage sensors
(d) oscillators
ASCR stands for Asymmetrical Thyristor. A
conventional thyristor is able to block a large
reverse voltage but this blocking capability is not
required in several industrial applications.
An asymmetrical thyristor is specially fabricated to
have limited reverse voltage capability.This
permits a reduction in turn-on time, turn-off time
and on-state voltage drop in ASCR.
A typical ASCR may have reverse blocking
capability of 20 to 30V and forward blocking
voltage of 400 to 2000V.
RCT stands for Reverse Conducting
Thyristor.A reverse conducting thyristor is a
special case asymmetrical thyristor with a
monolithically integrated antiparallel diode on
the same silicon chip.This construction reduces
to zero the reverse blocking capability of RCT.
The arrangement of ASCR and diode in a
single device reduces the heat sink size and
leads to compactness of the converter.RCTs
with 2000V and 500A ratings are available.

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