Thyristors

Part II
Prepared by
Dr. Mohammad Abdul Mannan
Assistant Professor, Department of EEE
American International University - Bangladesh
Classification of Thyristors:
Thyristors are classified as follows:
1. Phase-controlled thyristors [or Silicon-controlled
rectifiers (SCRs)]
2. Fast switching thyristors (or SCRs)
3. Gate-turn off thyristors (GTOs)
4. Bidirectional triode thyristors (TRIACs)
5. Reverse-conduction thyristors (RCTs)
6. Static induction thyristors (SITHs)
7 Light-activated
7. Light activated silicon-controlled
silicon controlled rectifiers (LASCRs)
8. FET-controlled thyristors (FET-CTHs)
9. MOS-controlled Thyristors (MCTs)
10. MOS turn-off thyristors (MTOs)
11. Bidirectional phase-controlled thyristors (BCTs)
12.. Emitere turn
u ooff (co
(control)
o ) thyristors
y s o s ((ETOs)
Os)
13. Integrated gate-commutated thyristors (IGCTs)
 Different Types of Thyristors
Phase-Control Thyristor (or SCRs)
Control Characteristic: Turn-on with a pulse signal (Current for turn on); Turn-
off with natural commutation (No turn off control).
Switching frequency: Low 60 Hz i.e it is suited for low speed switching
applications.
Turn-off time: 50 to 100 µs.
On-state voltage drop: Varies typically from about 1.15 V for 600 V to 2.5 V
f 4000 V devices;
for d i and
d for
f a 5500 A 1200 V thyristor
th i t it is
i typically
t i ll 1.25
1 25 V.
V
Advantages: Simple turn-on; Latching device; Turn-on gain is very high; Low
cost; high voltage; and high current device.
Disadvantages: Low-switching speed; Most suited for line commutated
applications between 50 and 60 Hz; cannot be turned-off with gate control.

SCR as an amplifier
The modern thyristors use an amplifying gate, where an
auxiliary thyristor TA is gated on by a gate signal and
then the amplified output of TA is applied as agate signal
to the main thyristor TM.
Fast Switching Thyristors (or SCRs)
Control Characteristic: Turn Turn-on
on with a pulse signal (Current for
turn on); Turn-off with natural commutation (No turn off control).
Switching frequency: Medium 5 kHz, these are used in high speed
switching application with forced commutation such as in inveter
and chopper circuit.
Turn-off time: 5 to 50 µs (fast turn off time).
O t t voltage
On-state lt d
drop: L
Low. F 2200A 1800 V thyristor
For h i i
is
typically 1.7 V. The on-state forward voltage drop varies
approximately as an inverse function of the turn-of time. This type of
thyristor is also known as an inverter thyristor.
dv/dt capability: high dv/dt o typically 1000 V/µs.
di/dt capability:
p y high
g di/dt o typically
yp µ
y 1000 A/µs.
Advantages: Same as the phase-controlled SCRs, except the turn-off
is faster. The fast turn-off and high di/dt are very important to reduce
the size and weight of commutating and/or reactive circuit
components.
Disadvantages: Similar to those of phase-controlled SCRs.
Gate-Turn off Thyristors (GTOs)
Control Characteristic: Turn-on with a positive pulse signal; Turn-
off
ff with
ith a negative
ti pulsel signal
i l (current
( t for
f both
b th turn-on
t andd turn-off
t ff
control).
Switching frequency: Medium 5 kHz.
O
On-state voltage drop: Low but b iti has
h higher
hi h on-state voltage
l than
h
that of SCRs. 3.4 V for 550 A 1200 V GTO.
Advantages: Similar to the fast switching thyristors, except it will be
turned-off with a negative gate signal.
Disadvantages: Turn-off gain is low between 5 and 8 and it requires a
large gate current to turn-off a large on-state current; there is a long tail
current during turn-off; although a latching device, it requires a
minimum gate current to sustain on-state current.
Advantages of GTOs over SCRs:
1. Elimination commutatingg components
p in forced
commutation, resulting in reduction in cost, weight, and
volume,
2 Reduction in acoustic and electromagnetic noise due to the
2.
elimination of commutation chokes,
3. Faster turn-off permitting high switching frequencies, and
4 Improved
4. I d efficiency
ffi i off converters.
Advantages (in low power application) of GTOs over power
BJTs:
BJT
1. A higher blocking voltage capability;
2. A high ratio of peak controllable current to average current,
3. A high ratio of peak surge current to average current,
typically 10:1;
4. A high onon-state
state gain (anode current/gate current), typically
600; and
5. A pulsed gate signal of short duration.
Bidirectional Triode Thyristors or Triode
AC
C Se
Semiconductor
co duc o Sw
Switches
c es ((TRIACs)
Cs)
A triac is equivalent to a pair of antiparallel connected
SCRs. It has one gate for turning-on in both directions.
It can conduct in both directions and is normally used in
ac phase control (e.g. ac voltage controller)
Control Characteristic: Turn-on applying gate a pulse
signal for current flow in both directions; Turn-off with
natural commutation (Current for turn-on; No turn-off
control).
Switching frequency: Low 60 Hz.
On state voltage
On-state oltage drop: Low.
L
Advantages: Same as the phase-controlled SCRs, except
the current can flow in both directions.
Disadvantages: Similar to those of phase-controlled
SCRs; except for low-power applications.
Advantages of Triacs over Antiparallel SCRs
A triac is equivalent to a pair of antiparallel connected SCRs.
SCRs
1. Triacs can be triggered with positive or negative polarity voltages.
2. A triac needs a single heat sink of slightly larger size, whereas antiparallel
thyristor
y pair needs two heat sinks smaller sizes,, but due to the clearance
p
total space required is more for thyristors.
3. A Triac needs a single fuse for protection, which also simplifies
construction.
4. In some dc applications, SCR is required to be connected with a parallel
diode to protect against reverse voltage, whereas a Triac used many work
without a diode, as safe breakdown in either direction is possible.

Disadvantages of Triacs over Antiparallel SCRs

11. Triacs have low dv/dt rating compared to SCRsSCRs.
2. SCRs are available in larger rating compared to Triacs.
3. Since a Triac can be triggered in either direction, a trigger circuit with Triac
needs careful consideration.
4. Reliability of Triacs is less than that of SCRs.
Reverse Conducting Thyristors (RCTs)
RCT is also known as asymmetrical
y thyristors
y ((ASCRs).
)
The forward blocking voltage varies from 400 to 2000 V and the current
rating goes up to 500 A.
Thee reverse
eve se bblocking
oc g vovoltage
tage iss typ
typically
ca y 30 to 400 V.
The difference between the SCR and RCT is that in RCT has an
integrated reverse diode.
Because of the reverse diode, RCT is not capable of reverse blocking
thus it is called ASCR.
These devices are advantageous where a reverse or freewheel diode
must be used.
used
Because the SCR and diode never
conduct at the same time they do not
produce heat simultaneously and can
easily be integrated and cooled together.
Reverse conducting g thyristors
y are often
used in frequency changers and
inverters.
Light-Activated Silicon-Controlled Rectifiers (LASCRs)
Control Characteristic: Turn-on by y direct radiation on the silicon wafer with
light. Turn-off with natural commutation.
Switching frequency: Low 60 Hz.
On-state voltage drop: Low.
Maximum voltage rating: 4 kV
Maximum current rating: 1500 A
Application: used in high-voltage and high-current applications such as HVDC
t
transmission
i i li
line andd Static
St ti reactive
ti power or volt lt ampere reactive
ti VAR
compensation.
dv/dt capability: these thyristors have high dv/dt o typically 2000 V/µs.
di/dt capability: these thyristors have di/dt o typically 250 A/µs.
s

Advantages: Same as the phase-

controlled SCRs, except the gate is
isolated and can be remotely
operated.
Disadvantages: Similar to those of
phase-controlled SCRs.
FET-Controlled Thyristors (FET-CTHs)
A FET-CTH device combines an MOSFET and a thyristor y in p
parallel.
It has a high switching speed, high di/dt, and high dv/dt.
This device can turn-on like conventional thyristors, but it cannot be
turned-off by gate control.
MOS-Controlled thyristors (MCTs)
An MCT is an improvement over a thyristor with a pair of MOSFETs to turn-on
and turn
turn-off
off current.
current
The MCT overcomes several of the limitations of the existing power devices and
promises to be a better switch for the future.
Control Characteristic: Turn-on p p-channel MCT with a negative
g voltage
g with
respective to anode and turn-off with positive voltage.
Switching frequency: Medium 5 kHz
On-state voltage drop: Medium
Advantages: Integrated the advantages of GTOs and MOSFT gate into a single
device; the power/energy required for the turn-on and turn-off is very small, it
has a low on-state voltage drop.
MOS turn-off thyristors (MTOs)
MTO is a combination of a GTO and an MOSFET which together overcome the
limitation of the GTO turn
turn-off
off capability.
capability
Control Characteristic: Turn-on with a positive pulse current to the turn on
gate. Turn off with a positive voltage to the turn off gate.
Switching g frequency:
q y Medium 5 kHz.
On-state voltage drop: Low.
Maximum voltage rating: 10 kV @ 20 MVA, 4.5 kV @ 500 A.
Maximum current rating: 4 kA @ 20 MVA.
Advantages: Similar to those GTOs, except it can be turn on through the normal
gate and turn off through the MOSFET gate; Due to the MOS gate it requires a
very low turn-off current and the turn-off time is small.
Di d
Disadvantages:
t Si il to GTOs,
Similar GTO it i has
h a along
l tail
il current during
d i turn-off.
ff
Emiter turn off (control) thyristors (ETOs)
ETO is a combination of a GTO and two MOSFET. A MOSFET is connected in
series with GTO.
GTO
Control Characteristic: Turn-on with a positive pulse current to the turn on
gate, turn off with a negative pulse voltage to the turn off MOS gate.
Switching g frequency:
q y Medium 5 kHz.
On-state voltage drop: Medium
Maximum voltage/ current rating: 6 kV
Advantages: Due to series MOS the transfer of current to the cathode region is
rapid and fast turn off. The series MOSFET has to carry the main anode current
Disadvantages: Similar to GTOs, it has a along tail current during turn-off. The
series MOSFET has to carry the main anode current it increases the on-state
voltage
l d
drop b about
by b 0 3 to 0.5
0.3 0 5 V and
d the
h conduction
d i losses.
l
Integrated gate-commutated
thyristors (IGCTs)
IGCT developed
d l d with ith an architecture
hit t
combining the best features of an
Insulated
Gate Bipolar Transistor (IGBT) and a
Gate Turn-Off thyristor (GTO).
IGCT can switch with the speed of an
Insulated Gate Bipolar Transistor
(IGBT) and conduct like a Gate Turn-
Off thyristor (GTO).
IGCT can be turned on and off by y the
gate signal, have low conduction loss
and require no dv/dt snubber.
Control Characteristic: Turn-on
with a positive pulse current to the
turn on gate. Turn off by applying a
fast rising negative current from a
m ltila ered
multilayered gate dri er
gate-driver circ it
circuit
board.
Bidirectional phase-controlled thyristors (BCTs)
Triggering Devices
 Triggering Devices
Unijunction Transistor (UJT)
Programmable Unijunction Transistor (UJT)
DIAC (Diode for Alternating Current)
Shockleyy Diode
Silicon Unilateral Switch (SUS)
Silicon Bilateral Switch (SBS)
Asymmetrical
y AC Trigger
gg
 Unijunction Transistor (UJT)
A unijunction transistor (UJT) is an electronic semiconductor
device that has only one junction and three terminals.
It is made from a bar of lightly doped N N-type
type silicon with a
heavily doped P-zone alloyed into the bar.

The P-zone forms the emitter section

of the transistor and its only junction,
junction
hence the name unijunction.
UJT used in g general ppurpose
p pulse,,
p
timing, sense, and Trigger application.
The terminals name of UJT are:
Emitter (E), Base 1 (B1) and Base 2
(B2).
RB1 and RB2 are called internal
dynamic resistance.
Interbase resistance: RBB =RB1
+RB2 (4kΩ ~ 10 KΩ)
RB1 > RB2, RB2 is fixed and RB1 is
a variable
i bl resistance.
i t It varies
i
from 4 kΩ to down 10 Ω. RB1
varies inverselyy IE.

Both B2 and emitter (E) biased

positive relative to B1.
VBB is fixed and VEE is variable.
 RB1 RB1
Vx = VBB = VBB =ηVBB
RB1+ RB2 RBB
η is called intrinsic stand off ratio (varies
0.5 ~ 0.8 but for a given UJT this value is
fixed).
VP =Vx +VD
VP is called the peak-
point
i t voltage
lt which
hi h is
i
the maximum forward
blockingg state voltage.
g
IP is called the peak-
point current
corresponding to VP.
 If VE<Vp the emitter diode DE is reverse biased and UJT is at
turn-off state. In this state, a small leakage current (IEO) flows
through the emitter and RB1 is at its high value (approximately
4kΩ).
If VE>Vp,
Vp, the emitter diode DE is forward biased and UJT is at
turn-on state.

In the peak-point holes

are injected from the
heavilyy doped
p P to lightly
g y
doped N bar.
Since N-bar is lightly
doped a little number of
doped,
holes recombines with
electron.
Due to the increase of holes carrier the current below
the N-bar increases and RB1 is drastically reduced. In
this moment Vx decreases and DE becomes more
forward biased, IE increases and VE decreased.
Th larger
The l IE injects
i j t more holes
h l into
i t B1, further
f th reducing
d i
RB1 and so on.
When this regenerative or snowballing process ends, ends
RB1 has dropped to a very small value and IE can
become veryy large,
g , limited byy R.
Because the voltage
decreases as increases of
current in so UJT can be
used as a negative
resistance
i t d i
device.
The emitter voltage and current reach to the valley point. VV and
IV are the voltage and current corresponding to the valley point.
Aft the
After th valley
ll point
i t the
th voltage
lt VE is
i almost
l t constant
t t so this
thi
region is called saturation region.

Turning OFF: If VEE decreases

the IE is also decreased. When
IE decreases up to IV, UJT
p
turns off and its operation
rapidly switches back to cut off
region.
IV is same as holding current
of thyristor.
 UJT as Relaxation Oscillator
When Vs is applied,
applied the capacitor C is charged through the
resistor R since the emitter circuit of UJT is in open state. The
charging time constant is τ1 = RC.
When the emitter voltage VE, reaches the peak-point voltage Vp,
the UJT turns on and C will discharge through RB1.
The discharging time constant is τ2=RB1C. τ2 must smaller than
τ1.
The period of oscillation, T, is fairly independent of the dc supply
voltage Vs, and is given by
T = 1 ≈ RC ln 1
f 1−η
The width tg of triggering pulse is: tg = τ2=RB1C
Resistor RB2 has a value of 100 Ω or greater and can be
determined approximately from:

4
RB2 = 10
η Vs
 Limiting Value of R

To turn on a UJT should be operate the right of peak

peak-point
point but
to the left of valley point. Thus the maximum value of R is given
by: V −V
Rmax = s p
Ip
The minimum value of R ensure the turn of where IE=IV and
VE=VV. Thus the maximum value of R is given by:
Rmin =Vs −Vv
So R should be Iv
chosen between
these two limit
that means
Rmin<R<Rmax.

E
Example
l 4.5
45
Example 17.2
UJT as SCR Trigger
Synchronized UJT Trigger (Ramp Triggering)

The firing angle

can be
controlled up to
150o.
 Programmable Unijunction Transistor (PUT)
The PUT is an improved version ofUJT device.
device
PUT is more similar to an SCR (four-layer device) except
that its anode-to-gate
g voltage
g can be used to both turn on
and turn off the device.
Applications: Motor control, Oscillators, Relay replacement,
Timers, Pulse shapers, Triggering Pulse etc.

Programmable: RBB, VP or IP, VV or

IV and η.
The gate voltage VG is maintained from the supply by
the resistor divider R1 and R2, and determines the
peak voltage VP.
I the
In th case off UJT,
UJT VP is i fixed
fi d for
f a device
d i by b the
th dc
d
supply voltage. But VP of a PUT can be varied by
varying the resistor divider R1 and R2.
If VA<VG, the device will remain in its off-state.
If VA> VG + VD, the p peak p point is reached and the
device turns-on.
The peak current IP and the valley current IV both
depend on the equivalent impedance on the gate RG
and the dc supply voltage Vs.
VP is given by: R2
VP = Vs
R1+ R2

The intrinsic stand off ratio is given by:

VP R2
η= =
Vs R1+ R2
 PUT as Relaxation Oscillator
R and C control the frequency along with R1 and R2. the period
of oscillation T is given approximately by :
⎞⎛
R ⎜
l Vs = RC ln
T = 1 ≈ RC ln l 1+ 2 ⎟⎟⎜
f Vs −VP R1 ⎟⎠⎜
⎜
⎝

The intrinsic stand off ratio is g

given by:
y
IG = (1−η ) Vs
RG
R1 and R2 can be found from:

RG RG
R1= η ; R2 =
1−η
Example 4
4.6
6
Example 17.3
 Advantages of PUT over UJT

1. The switching voltage is easily

1
varied Vp through the voltage
divider resistors.
resistors
2. The PUT can operate low
voltages making it compatible
with integrated
g circuit.
3. The peak point current of OUT
is low.
 DIAC (Diode for Alternating Current)
The DIAC is a diode that conducts current only after its
breakdown voltage has been reached momentarily.

A diac is a two terminal five layer semi

semi-
conductor bi-directional switching device.
The device consists of two p-n-p-n sections
i anti-parallel.
in ti ll l

Diac will conduct when the

voltage applied across the device
terminals T1 & T2 exceeds the
break over voltage.
A diac phase (ac) control circuit is shown in Fig. 2-59. On either
alternation, the capacitor voltage reaches the breakover
potentials,
t ti l the
th diac
di fires
fi and
d gates
t theth triac
t i ON.
ON