Recall-Lecture 5

 DC Analysis
 Representation of diode into three models
 Ideal case – model 1 with V = 0
 Piecewise linear model 2 with V has a constant value
 Piecewise linear model 3 with V and forward resistance, rf
 DIODE DC ANALYSIS
• Find I and VO for the circuit shown below if the diode has the
value of V = 0.7V

I
D1

20k + 20k

5V VO 5V

I = 0.2325mA
VO = -0.35V
MULTIPLE DIODE CIRCUITS
 Problem-Solving Technique: Multiple
Diode Circuits
1. Assume the state of the diode.
a. If assumed on, VD = V
b. If assumed off, ID = 0.
2. Analyze the ‘linear’ circuit with assumed diode
states.
3. Evaluate the resulting state of each diode.
4. If any initial assumptions are proven incorrect,
make new assumption and return to Step 2.
Example 1 +5 V Let’s assume both diodes are
The figure shows a multiple on
diode circuit. If each diode cut- KVL at L1:
in voltage is Vγ= 0.7 V, 5 iD2 + 0.7 + 10 (iD2+ iD1) – 5 – 5 =
determine iD1, iD2 and vO 0
= 5 k
5 iD2 + 10 (iD2+ iD1) = 9.3 ---(1)
KVL at L2:
0V 0.7 + 10 (iD2+ iD1) – 5 = 0
10 (iD2+ iD1) = 4.3 replace in (1)
5 iD2 + 4.3 = 9.3
= 10 k
iD2 = 1 mA
Hence,
Using 10 (iD2+ iD1) = 4.3
so iD1 = 0.43 – 1 = -0.57 mA
-5V
a negative diode current
means that the diode is
actually OFF.
Therefore, we need to calculate again, but now we know that diode D1
is actually off which means that iD1 = 0
 D1 is off and D2 is on
+5 V
KVL at L1:
5 iD2 + 0.7 + 10 (iD2) – 5 – 5 = 0
5 iD2 + 10 (iD2) = 9.3
iD2 = 0.62 mA
= 10 k

KVL at L3:
vo – 5 + 5 iD2 = 0
vo = 5 – 3.1 = 1.9 V

= 5 k

-5V
Example 2 +5 V Let’s assume both diodes are
The figure shows a multiple on
diode circuit. If each diode cut-
in voltage is Vγ= 0.7 V, KVL at L1:
determine iD1, iD2 and vO 5 iD2 + 0.7 + 10 (iD2+ iD1) – 5 – 5 =
= 5 k 0
5 iD2 + 10 (iD2+ iD1) = 9.3 ---(1)
KVL at L2:
4V 0.7 + 10 (iD2+ iD1) – 5 -4 = 0
10 (iD2+ iD1) = 8.3 replace in (1)

= 10 k 5 iD2 + 8.3 = 9.3

iD2 = 0.2 mA
Hence,
10 (iD2+ iD1) = 8.3
-5V so iD1 = 0.83 – 0.2 = 0.63 mA
Both currents have positive
values which means that our
assumption is correct
So calculate vo :
KVL at L3:
vo – 5 + 5 iD2 = 0
vo = 5 – 1 = 4 V
Example 3
The figure shows a multiple diode circuit. If each diode cut-in voltage is Vγ= 0.7 V,
determine ID1, ID2 and VO for R2 = 1.1 k.

Answers:
ID1 = 1 mA
ID2 = 6 mA
VO = 2.3 V
DIODE AC EQUIVALENT
 Representation of Signal

A sinusoidal voltage when it is superimposed on a DC voltage can be represented

as

Sinusoidal voltage superimposed on dc voltage VBEQ

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 ● Sinusoidal Analysis
The total input voltage vI = dc VPS + ac vi

iD = IDQ + id
vD = VDQ + vd

IDQ and VDQ are the DC diode current

and voltage respectively.

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 Total voltage
Total current

VDQ = DC voltage
vd = ac component

The DC diode current IDQ in term of diode voltage VDQ

If vd << VT , the equation can be expanded into linear series as:

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 Therefore, the diode current-voltage relationship can
be represented as

The relationship between the AC components of the diode voltage and diode
current is

Or,

Where, During AC analysis the diode is equivalent to a

resistor, rd

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 VDQ = V
rd
+ -

IDQ id

DC equivalent AC equivalent

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 Example 1
Analyze the circuit (by determining VO & vo ).
Assume circuit and diode parameters of
VPS = 10 V, R = 5 kΩ, Vγ = 0.6 V & vi = 0.2 sin ωt

DC Current

DC Output voltage

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 vi

vi

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 DC ANALYSIS AC ANALYSIS

DIODE = MODEL 1 CALCULATE DIODE =

,2 OR 3 rd RESISTOR, rd

CALCULATE DC CALCULATE AC
CURRENT, ID CURRENT, id
 EXAMPLE 1
 Assume the circuit and diode parameters for the circuit below
are

VPS = 10V, R = 20k, V = 0.7V, and vi = 0.2 sin t (V).

Determine the current, IDQ and the time varying current, id

ANSWERS
IDQ = 0.465 mA
id = 9.97 sin t (µA)
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 EXAMPLE 2

Determine the voltage vD(t) given that the diode constant voltage drop, V = 0.7V

ANSWERS
vD(t) = 0.7 V + 6 cos t (V)

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 Other Types of Diodes

Photodiode

The term ‘photo’ means light. Hence, a photodiode converts optical

energy into electrical energy. The photon energy breaks covalent bond
inside the crystal and generate electron and hole pairs

Solar Cell
Solar cell converts visible light into
electrical energy. The working
principle is the same as photodiode
but it is more towards PROVIDING
the power supply for external uses

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 Light Emitting Diode

An LED is opposite of photodiode this time, it converts electrical energy into

light energy – Normally GaAs is used as the material for LED. During diffusion of
carriers – some of them recombines and the recombination emits light waves.

Schottky Barrier Diode

A Schottky Barrier diode is a metal

semiconductor junction diode. The
metal side is the anode while the n-
type is the cathode. But the turn on
voltage for Schottky is normally
smaller than normal pn junction
diode

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 Breakdown Voltage
 The breakdown voltage is a function of the doping concentrations in
the n- and p-region of the pn junction.
 Large doping concentrations result in smaller break-down voltage.
 Reverse biased voltage – ET 
 The electric field may become large enough for the covalent bond to
break, causing electron-hole pairs to be created.
 So, electrons from p-type are swept to n-region by the electric field
and holes from the n-type are swept to the p-region
 The movement will create reverse biased current known as the Zener
Effect.

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 Zener Effect and Zener Diode

 The applied reverse biased voltage cannot increase without limit since at some
point breakdown occurs causing current to increase rapidly.
 The voltage at that point is known as the breakdown voltage, VZ
 Diodes are fabricated with a specifically design breakdown voltage and are
designed to operate in the breakdown region are called Zener diodes. Circuit
symbol of the Zener diode:

NOTE: When a Zener diode is reverse-biased, it acts at the

breakdown region, when it is forward biased, it acts like a
normal PN junction diode

 Such a diode can be used as a constant-voltage reference in a circuit.

 The large current that may exist at breakdown can cause heating effects and
catastrophic failure of the diode due to the large power dissipated in the device.
 Diodes can be operated in the breakdown region by limiting the current to a value
within the capacities of the device.

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  Avalanche Effect
 While these carriers crossing the space-charge region,
they also gain enough kinetic energy.
 Hence, during collision with other atoms, covalent
bond is broken and more electron-holes pairs are
created, and they contribute to the collision process as
well. Refer to figure below

Electron with e
high kinetic e atom
h
atom
h
energy

e eh
atom

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 Zener Diode
10 k

Calculate the value of the current ID if VZ = 10V

ANSWER: ID = 0.2 mA

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