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Diode Resistance & Diode Equivalent Circuits

This document discusses diode resistance and equivalent circuits. It describes how diodes have small forward resistance compared to large reverse resistance. The forward resistance consists of static (DC) and dynamic (AC) components, while the reverse resistance is calculated similarly. Equivalent circuits are proposed to model diode behavior, ranging from ideal to piecewise-linear to complete models. Temperature effects are also reviewed, defining concepts like thermal voltage and how it influences diode current. Sample problems demonstrate calculations of resistance, saturation current, and bias voltages at different temperatures.

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310 views42 pages

Diode Resistance & Diode Equivalent Circuits

This document discusses diode resistance and equivalent circuits. It describes how diodes have small forward resistance compared to large reverse resistance. The forward resistance consists of static (DC) and dynamic (AC) components, while the reverse resistance is calculated similarly. Equivalent circuits are proposed to model diode behavior, ranging from ideal to piecewise-linear to complete models. Temperature effects are also reviewed, defining concepts like thermal voltage and how it influences diode current. Sample problems demonstrate calculations of resistance, saturation current, and bias voltages at different temperatures.

Uploaded by

girishkumardarisi254
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Diode Resistance & Diode

equivalent circuits
Contents
• Diode Equivalent circuits.
Diode Resistance:
• Forward Resistance-DC(or)Static and Ac (or)
Dynamic resistances
• Reverse Resistance -DC(or)Static and Ac (or)
Dynamic resistances
Diode Resistance
• An ideal diode offers zero resistance in
forward bias and infinite resistance in reverse
bias.
• Forward Biased conducts easily where as
reverse biased diode practically conducts no
current.
• Forward Resistance of a diode is quite small as
compared with reverse resistance.
Forward Resistance-Types
Forward Resistance: The resistance offered by
the diode to forward bias is known as forward
bias resistance.
Forward Resistance

AC (or)
DC (or) Static
Dynamic
Resistance (Rf)
Resistance (rd)
DC (or) Static Resistance(Rf)
It is the ratio of the dc voltage across the diode
to the resulting dc current through it.

 
DC (or)
Static Resistance
AC (or) Dynamic Resistance(rd)
It is the ratio of change in voltage across diode
to the resulting changing in current through it.

AC (or)
Dynamic Resistance

  ∆𝑽𝒅
𝒓 𝒇 ( 𝒐𝒓 ) 𝒓 𝒅= Ω
∆ 𝑰𝒅
Alternate Derivation for rf
•  

(1)
Contd..
•  

Generally
Contd..
•  

Normally forward resistance is in the range of 1


to 25Ω
Reverse Resistance(Rr)
• The resistance offered by the diode to the
reverse bias is known as reverse resistance.
• In germanium diodes, the ratio of reverse to
forward resistance is 40000:1 while for the
silicon this ratio is 1000000:1
• Calculations of dc and ac reverse resistance is
same as dc and ac forward resistance.
Static Reverse Resistance
•DC  (or) Static Resistance(Rr):
AC (or) Dynamic Reverse Resistance(rr)

  𝑂𝐵 − 𝑂𝐴
𝑟𝑟 = 𝐾 Ω (𝑜𝑟 ) 𝑀 Ω
𝑂𝐷 −𝑂𝐶
Diode Equivalent Circuits /Small signal switching motels

Def.: An equivalent circuit is a combination of


elements properly chosen to best represent the
actual terminal characteristics of a device or
system in a particular operating region.
• It can be used in traditional circuit analysis
techniques.
Ideal Diode Model
Simplified Model/Practical Diode Model
Piecewise-Linear Model/Complete Diode
Model/Approximate Model
Summary
Recall Temperature Ranges
• Absolute temperature(0K)
• Room temperature(300k)
• Ambient temperature(TA)=290K

0
𝐶𝑜𝑛𝑣𝑒𝑟𝑠𝑖𝑜𝑛 𝐹𝑜𝑟𝑚𝑢𝑙𝑎 : 𝐾 =𝐶 +273
 
Recall Temperature Ranges
• Absolute temperature(0K) =-2730C
• Room temperature(300k) =270C
• Ambient temperature(TA)=290K =170C

𝐶𝑜𝑛𝑣𝑒𝑟𝑠𝑖𝑜𝑛
  𝐹𝑜𝑟𝑚𝑢𝑙𝑎 : 𝐾 =𝐶 0 +273
Recall Thermal Voltage(VT)
•  Volt Equivalent of temperature

Where J/0K
q= 1.6 x 10-19 C
Contd..
•If T=0K
  then VT=0V
If T=300k then
Problems
1. The Voltage across a silicon diode at a room
temperature of 3000K is 0.71V when 2.5mA
current flows through it, if the voltage
increases to 0.8V , calculate the new diode
current.
Sol.:
Contd..
2. Determine the forward resistance of PN
junction diode when the forward current is 5mA
at T=300K.Assume the diode is silicon.
Sol.: Given data
Contd..
•3.   Find the reverse saturation current for a
silicon PN junction diode which passes a current
of 15 mA at 270 C when the forward bias voltage
is 680 mV.
Sol.: V=680mV, I=15mA, =26mv (at room
temperature), =2 (for si)
_______
Contd..
4. Calculate the factor by which the current will
increase in silicon diode operating at a forward
voltage of 0.4V when the temperature is raised
from 250C to 1500C.
Sol.: Given data
Contd..
5. A Germanium diode has a reverse saturation
current of 3μA. Calculate the forward bias
voltage at the room temperature of 270C and 1%
of the rated current is flowing through the
forward biased diode. The diode forward rated
current is 1A.
Sol.: Given data
Next session
• Diode Capacitance
THANK YOU

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