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ECE-EDA LEC05 Bipolar Junction Transistor

(a) When VIN = 0 V, the transistor is in cutoff region. In cutoff region, VCE is approximately equal to VCC. (b) For the transistor to operate in saturation region, the minimum value of IB required is given by: IB(min) = IC(sat) / βDC Where, IC(sat) is the saturation current of the transistor which is given by: IC(sat) = (VCC - VCE(sat)) / RC Substituting the given values of VCC = 12 V, VCE(sat) = 0.2 V, RC = 1 kΩ, we get: IC(sat) = (

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0% found this document useful (0 votes)
246 views51 pages

ECE-EDA LEC05 Bipolar Junction Transistor

(a) When VIN = 0 V, the transistor is in cutoff region. In cutoff region, VCE is approximately equal to VCC. (b) For the transistor to operate in saturation region, the minimum value of IB required is given by: IB(min) = IC(sat) / βDC Where, IC(sat) is the saturation current of the transistor which is given by: IC(sat) = (VCC - VCE(sat)) / RC Substituting the given values of VCC = 12 V, VCE(sat) = 0.2 V, RC = 1 kΩ, we get: IC(sat) = (

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Kim Opena
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BIPOLAR JUNCTION TRANSISTOR

1. Introduction
2. Transistor Structure
3. Basic Transistor Operation
4. BJT Characteristics and
Parameters OUTLINE
5. The BJT as an Amplifier
6. The BJT as a Switch
7. The Phototransistor
8. Transistor Categories and
Packaging
1. Describe the basic structure of the
BJT
2. Discuss basic BJT operation
3. Discuss basic BJT parameters and
characteristics and analyse transistor
circuits OBJECTIVES
4. Discuss how a BJT is used as a
voltage amplifier
5. Discuss how a BJT is used as a switch
6. Discuss the phototransistor and its
operation
7. Identify various types of transistor
packages
• The invention of the transistor
was the beginning of a
technological revolution that is
INTRODUCTION still continuing.
• Two basic types of transistor
– Bipolar junction transistor (BJT)
– Field-effect gransistor (FET)
• Transistor as replacement of
vacuum tube
• 1947
HISTORY – Bell Laboratories
• William Shockley
• Walter Brattain
• John Bardeen

5
• Three doped semiconductor regions
BIPOLAR separated by two pn junctions
JUNCTION
TRANSISTOR
(BJT)
STRUCTURE

BIPOLAR
• use of both holes and electrons as current
carriers in the transistor structure
BIPOLAR Standard BJT symbols
JUNCTION
TRANSISTOR
(BJT) BASE
• Lightly doped, very thin
STRUCTURE
EMITTER
• Heavily doped
COLLECTOR
• Moderately doped
TITLE
CHECKPOINT
1. Name the two types of BJTs according to
their structure.
2. The BJT is a three-terminal device. Name
the three terminals.
3. What separates the three regions in a
BJT?
AMPLIFIER
– electronic device that increases
the voltage, current, or power of
BASIC BJT a signal
OPERATION BIASING
– Forward-reverse bias
•TRANSISTOR
  CURRENTS
BASIC BJT – The emitter current (IE) is the
OPERATION sum of the collector current (IC)
and the base current (IB).
TITLE
CHECKPOINT
1. What are the bias conditions of the base-emitter and base-
collector junctions for a transistor to operate as an amplifier?
2. Which is the largest of the three transistor currents?
3. Is the base current smaller or larger than the emitter current?
4. Is the base region much thinner or much wider than the
collector and emitter regions?
5. If the collector current is 1 mA and the base current is 10 uA,
what is the emitter current?
BJT
CHARACTERISTICS
AND PARAMETERS
DC Beta (βDC)   𝐼𝐶
𝛽 𝐷𝐶 =
• DC Beta 𝐼𝐵
– dc current gain
– from less than 20 to 200 or higher
– designated as an equivalent
 h
(h) parameter, hFE 𝐹𝐸 𝛽
hybrid
= 𝐷𝐶
BJT
CHARACTERISTICS
AND PARAMETERS
DC Alpha (αDC)  𝐼𝐶
𝛼 𝐷𝐶 =
𝐼𝐸
– less used parameter than beta
– range from 0.95 to 0.99 but less than 1
Determine the dc current gain βDC
and the emitter current IE for a
BJT PARAMETER

transistor where IB=50 uA and


IC=3.65 mA.
Example

Also determine αDC


TITLE
HOMEWORK 1

Research:
1. How can BJT be used as amplifier?
2. How does BJT use as a switch?

Short bondpaper, handwritten


Ideal dc model of an npn transistor

TRANSISTOR
DC MODEL
– The input circuit is forward bias
– The output circuit is dependent
current source
BJT CIRCUIT
Transistor currents and voltages
ANALYSIS
IB : dc base current
IE : dc emitter current
IC : dc collector current
VBE : dc voltage at base
with respect to emitter
VCB : dc voltage at
collector with respect to
base
VCE : dc voltage at
collector with respect to
emitter
BJT CIRCUIT
Transistor currents and voltages
ANALYSIS
 
BJT CIRCUIT ANALYSIS Determine IB, IC, IE, VBE, VCE, and VCB
in the circuit. The transistor has a
βDC = 150.
Example
COLLECTOR
CHARACTERISTIC CURVES
Saturation Region
– Both junction is forward biased
COLLECTOR – Collector current has reached
maximum and is independent of the
CHARACTERISTIC base current
CURVES
Linear Region (Active Region)
– BC junction becomes reverse biased
when VCE exceeds 0.7V
COLLECTOR
– IC increases very slightly as VCE
CHARACTERISTIC increases
CURVES
Breakdown Region
– VCE reaches a sufficiently high voltage
COLLECTOR and the reverse biased base-collector
goes into breakdown causing a rapid
CHARACTERISTIC increase in IC
CURVES
Cutoff Region
– When IB is equal to 0, causing a very
COLLECTOR small collector leakage current
– Non-conducting state of transistor
CHARACTERISTIC
CURVES
Sketch an ideal family of collector
BJT CHARACTERISTIC CURVES
curves for the circuit for IB=5uA to 25uA
in 5uA increments. Assume βDC = 100
and that VCE does not exceed
breakdown.
EXAMPLE
Cutoff
• Collector leakage current (ICEO) is
COLLECTOR extremely small and is usually neglected.
Base-emitter and base-collector junctions
CHARACTERISTIC are reverse-biased.
CURVES
Saturation
• Increase in IB causes increase in IC, and
COLLECTOR decrease in VCE.
• Saturation point occurs when VCE drops to
CHARACTERISTIC VCE,sat where it can no, longer decrease in
CURVES value making IC stop increasing
• DC load line on a family of collector
characteristic curves illustrating the cutoff
and saturation conditions.

DC LOAD LINE
Determine whether or not the transistor
BJT CHARACTERISTIC CURVES
is in saturation. Assume VCE(sat) = 0.2 V.
EXAMPLE
• Dependency of βDC or hFE to collector
current temperature

MORE ABOUT
βDC

• Directly proportional to temperature.


• Directly proportional to IC up until a
maximum point, then becomes inversely
proportional.
TITLE
CHECKPOINT
1. Define βDC and αDC. What is hFE?
2. If the dc current gain of a transistor is 100, determine βDC and αDC.
3. What two variables are plotted on a collector characteristic
curve?
4. What bias conditions must exist for a transistor to operate as an
amplifier?
5. Does βDC increase or decrease with temperature?
6. For a given type of transistor, can βDC be considered to be a
constant?
AMPLIFICATION
• process of linearly increasing the
amplitude of an electrical signal and is
BJT AS one of the major properties of a
AMPLIFIER transistor
• Amplifier has dc and ac quantities.
AMPLIFICATION
• process of linearly increasing the amplitude of
an electrical signal and is one of the major
properties of a transistor
VOLTAGE
• Voltage gain Av
AMPLIFICATION

 
VOLTAGE AMPLIFICATION
Determine the voltage gain and the ac
output voltage if r’e = 50 Ω.
EXAMPLE
TITLE
CHECKPOINT
1. What is amplification?
2. How is voltage gain defined?
3. Name two factors that determine the voltage gain of
an amplifier.
4. What is the voltage gain of a transistor amplifier that
has an output of 5 V rms and an input of 250 mV rms?
5. A transistor connected as in figure has an r’e = 20 Ω. If
RC is 1200 Ω, what is the voltage gain?
SWITCHING OPERATION
• Operating the BJT alternately in cutoff
and saturation.
BJT AS A
SWITCH

• Cutoff
 
SWITCHING OPERATION
• Operating the BJT alternately in cutoff
and saturation.
BJT AS A
SWITCH

• Saturation
  𝑉 𝐶𝐶 − 𝑉 𝐶𝐸 (𝑠𝑎𝑡  ) 𝐼 𝐶(𝑠𝑎𝑡 )
𝐼 𝐶 ( 𝑠𝑎𝑡 )= 𝐼 𝐵 (𝑚𝑖𝑛) =
𝑅𝐶 𝛽 𝐷𝐶
(a) For the transistor circuit, what is VCE when VIN=0V?
(b) What minimum value of IB is required to saturate
this transistor if βDC is 200? Neglect VCE(sat).
(c) Calculate the maximum value of RB when VIN = 5 V.
BJT AS SWITCH
EXAMPLE
Simple Application of Transistor Switch
• A transistor used to switch an LED on and
off.
BJT AS A
SWITCH
TITLE
CHECKPOINT
1. When a transistor is used as a switch, in what two
states is it operated?
2. When is the collector current maximum?
3. When is the collector current approximately zero?
4. Under what condition is VCE = VCC?
5. When is VCE minimum?
PHOTOTRANSISTOR
• Similar to BJT except the base current
is produced and controlled by light
THE instead of a voltage source
PHOTOTRANSISTOR • Converts light energy to electrical
energy
  𝐼 𝐶 =𝛽 𝐷𝐶 𝐼 𝜆

• Iλ is the base current and directly


proportional to light intensity
THE Phototransistor circuit and characteristic
PHOTOTRANSISTOR curve
Typical phototransistor spectral response

THE
PHOTOTRANSISTOR

• Sensitive with red and infrared spectrum


OPTOCOUPLERS
• Uses an LED optically coupled to a
photodiode or a phototransistor in a
PHOTODIODE single package.
APPLICATIONS

• used to isolate sections of a circuit that are


incompatible in terms of the voltage levels or
currents required.
CTR (current transfer ratio)
– Indication of how efficiently a signal is
coupled from input to output
PHOTODIODE – Change in the LED current to the
change in corresponding
APPLICATIONS photodiode/phototransistor current.
TITLE
CHECKPOINT
1. How does a phototransistor differ from a
conventional BJT?
2. The collector current in a phototransistor
circuit depends on what two factors?
3. What is the optocoupler parameter CTR?
END OF CLASS NEXT
MEETING

LECTURE
• LONG QUIZ
• SPECIAL PURPOSE DIODES
• BIPOLAR JUNCTION TRANSISTORS
Determine IB, IC, IE, VBE, VCE, and VCB in
the circuit for the following values: RB =
22kΩ, RC = 220Ω, VBB = 6V, VCC = 9V and
βDC = 90.
EXERCISE 1
Determine whether or not the transistor is
saturated for the following values:
βDC=125, VBB=1.5V, RB=6.8kΩ, RC=180Ω, and
VCC=12 V. Assume VCE(sat) = 0.2 V.
EXERCISE 1
Determine the value of RC and the ac
output voltage if r’e = 50 Ω and the
voltage gain is 50.
EXERCISE 1

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