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On Igbt

The IGBT is a combination of a MOSFET and BJT that benefits from the high switching speed of a MOSFET and high current carrying capability of a BJT. It has a voltage controlled semiconductor structure that enables large collector-emitter currents with almost zero gate current. The IGBT consists of a MOSFET and two BJTs, and its operation is faster than a power MOSFET or BJT. It has advantages like lower gate drive requirements and lower switching losses compared to other power devices.

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650 views19 pages

On Igbt

The IGBT is a combination of a MOSFET and BJT that benefits from the high switching speed of a MOSFET and high current carrying capability of a BJT. It has a voltage controlled semiconductor structure that enables large collector-emitter currents with almost zero gate current. The IGBT consists of a MOSFET and two BJTs, and its operation is faster than a power MOSFET or BJT. It has advantages like lower gate drive requirements and lower switching losses compared to other power devices.

Uploaded by

Sayanta Saha
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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POWER ELECTRPONICS

INSULATED GATE BIPOLAR TRANSISTOR


INTRODUCTION
  IGBT is a combination of MOSFET and Transistor

 MOSFET has advantages of high switching speed with high


impedance and on the other side BJT has advantage of high
gain and low saturation voltage.

 IGBT is a voltage controlled semiconductor which enables


large collector emitter currents with almost zero gate current
drive.

 BJT is current controlled device but for the IGBT, the control
depends on the MOSFET
CONTD
 Though the unipolar nature of PMOSFETs leads to low switching times, it
also leads to high ON-state resistance as the voltage rating increases.

 IGBT is known by various other names also, such as- Metal


Oxide Insulated Gate Transistor (MOSIGT), Gain Modulated
Field Effect Transistor (GEMFET), Conductively Modulated
Field Effect Transistor (COMFET), Insulated Gate Transistor
(IGT).

 IGBT is a voltage controlled semiconductor which enables


large collector emitter currents with almost zero gate current
drive.
SYMBOLIC DIFFERENCE BETWEEN MOSFET, BJT&
IGBT
STRUCTURE OF IGBT
CONTD

 The structure of this device is plain and the Si section of the IGBT is
nearly similar to that of a vertical power of a MOSFET excluding P+
injecting layer.

 It shares the equal structure of metal oxide semiconductor’s


gate & P-wells through N+ source regions.

 N+ layer consists of four layers and that are situated at the


upper is called as the source and the lowest layer is called as
a collector or drain.

 one layer known as injection layer which is p+ unlike n+


substrate in PMOSFET.
CONTD

 This injection layer is the key to the superior characteristics of IGBT.

 Other layers are called the drift and the body region. an
n-channel MOSFET and two BJTs- Q1 and Q2.

 The operation of an IGBT is faster than the power BJT and


power MOSFET.
IGBT PRINCIPLE OF OPERATION
CONTD

 The two transistor back to back connection forms a parasitic Thyristor.

 N-channel IGBT turns ON when the collector is at a positive


potential with respect to emitter.

 And gate also at sufficient positive potential (>V GET) with respect to
emitter.
 This condition leads to the formation of an inversion layer just
below the gate, leading to a channel formation and a current
begins to flow from collector to emitter.
 The collector current Ic in IGBT constitutes of two components- Ie
and Ih. Ie is the current due to injected electrons flowing from
collector to emitter through injection layer, drift layer and finally
the channel formed.
CONTD

 Hence, Ic +Ih

 Although Ih is almost negligible and hence Ic ≈ Ie.

 A peculiar phenomenon is observed in IGBT known as Latching up


of IGBT.

 when collector current exceeds a certain threshold value (I CE).

 In this the parasitic thyristor gets latched up and the gate


terminal loses control over collector current and IGBT fails to turn
off even when gate potential is reduced below V GET.
 For turning OFF of IGBT, need typical commutation circuitry as in
the case of forced commutation of thyristors.
CHARACTERISTICS OF IGBT
STATIC I-V CHARACTERISTICS OF IGBT
CONTD..

 I-V characteristics are shown depending on the different gate voltage or Vge .

 X axis denotes collector emitter voltage or Vce and the Y axis


denotes the collector current.

 During the off state the current flowing through the collector and
the gate voltage is zero. When we change the Vge or the gate
voltage the device goes in to the active region.

 Stable and continuous voltage across gate provides continuous


and stable current flow through the collector.

 Increase of Vge is proportionally increasing the collector


current, Vge3 > Vge2 > Vge3.  BV is the breakdown voltage of the
IGBT.
Transfer Characteristics of IGBT
 It is almost identical with PMOSFET. The IGBT will go to the “ON”
state after Vge is greater than a threshold value depending on
the IGBT specification
\
SWITCHING CHARACTERISTICS OF IGBT
CONTD..

 Turn on time ton is composed of two components as usual, delay time (t dn) and
rise time (tr).

 Delay time is defined as the time in which collector current rises


from leakage current ICE to 0.1 IC (final collector current) and
collector emitter voltage falls from V CE to 0.9VCE.

 Rise time is defined as the time in which collector current rises


from 0.1 IC to IC and collector emitter voltage falls from 0.9V CE to
0.1 VCE.
 tON = tdn + tr

 The turn off time toff consists of three components, delay time
(tdf), initial fall time (tf1) and final fall time (tf2)
CONTD..

 Delay time is defined as time when collector current falls from IC to 0.9 IC
and VCE begins to rise.

 Initial fall time is the time during which collector current falls
from 0.9 IC to 0.2 IC and collector emitter voltage rises to 0.1
VCE.

 The final fall time is defined as time during which collector


current falls from 0.2 IC to 0.1 IC and 0.1VCE rises to final value
VCE.

 Toff = tdf + tf1 + tf2


Advantages and Disadvantages of IGBT

Advantages:-
 Lower gate drive requirements

 Low switching losses

 Small snubber circuitry requirements

 High input impedance

 Voltage controlled device

 Temperature coefficient of ON state resistance is positive and

less than PMOSFET, hence less On-state voltage drop and


power loss.
 Enhanced conduction due to bipolar nature
 Better Safe Operating Area
CONTD..

Disadvantages:-
 Cost

 Latching-up problem

 High turn off time compared to PMOSFET

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