Unit I
Unit I
IC Technologies
Introdu Basic Electrical
Properties of MOS
ction and BiCMOS Circuits
IDS - VDS
MOS relationships
MOS transistor
Threshold Voltage - VT
PMOS figure of merit-ω0
Transconducta
nce-gm, gds;
NMOS
Pass
CMOS transistor
& NMOS Inverter, Various
pull ups, CMOS Inverter
analysis and design
Bi-CMOS
Technologi
es Bi-CMOS
Inverters
Course Outline:
TEXT BOOKS:
References:
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Realization of complex circuits using discrete devices are difficult and costly too.
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ICs solve this problem by printing all small circuits on single flat surface.
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This reduces the cost because cost depends upon die size.
Thus VLSI design manages complexity and helps to simplify the complex design
problems.
1967-1971 : MSI, 100-1000 Tr/C, Adders, counters and 1K RAM chip by Intel.
1958 Integrated circuits developed by Kilby (TI) and Noyce and Moore
1874 Braun invents the solid-state rectifier (Fairchild Semiconductor)
(using point contact based on lead sulphide)
1961 First commercial IC from Fairchild Semiconductor
1906 DeForest invents triode vacuum
tube. 1963 IEEE formed from merger of IRE and AIEE
1947 Bardeen and Brattain at Bell 1978 First commercial 1-kilobit memory.
Laboratories invent bipolar transistors.
1974 8080 microprocessor introduced.
1952 Commercial bipolar transistor
production at Texas Instruments. 1984 Megabit memory chip introduced.
1956 Bardeen, Brattain, and 1995 Gigabite memory chip presented.
Shockley receive Nobel prize.
Evolution of Electronic Devices
Discrete
Vacuum Transistors
Tubes
Firstly, between 1961-1965 in SSI (small scale integration) transistors were fabricated
about 10 to 100 on a single chip. This technology is used for making logic gates, flip flops.
In 1966-1970 in MSI (medium scale integration) transistors were fabricated about 100 to
1000 on a single chip. This technology is used for making counters, multiplexers, decoders.
In 1971-1979 in LSI (large scale integration) transistors were fabricated about 1000 to
20000 on a single chip. This technology is used for making microprocessor, RAM, ROM
In 1980-1984 in VLSI (very large scale integration) transistors were fabricated about 20000
to 50000 on a single chip. This technology is used for making DSP (digital signal processing)
IC’s, RISC microprocessor, 16-bit and 32-bit microprocessors.
From 1985- present technology is ULSI (ultra large scale integration), in which transistors
are fabricated about greater than 50000 to billions on a single chip. This technology is used
for making 64-bit microprocessors.
MOORE’S LAW:
HOW TRANSISTOR REQUIREMENT INCREASES WITH TIME
In 1965 Moore’s gave a law, in which he observed the number of transistors in a dense integrated circuit doubles about every year.
Integrated Circuits (IC’s)are popularly known as the Silicon Chip or
Computer chip or Micro Chip
Why the idea for the smaller circuits came ??
Actually as the technology starts developing, and the new devices of different
performance and sizes came into being, then the manufacturers felt the need for the
better electronic components.
Although they are using the transistors instead of the vacuum tubes(which are bulky
than the transistors). But still they want something even better.
And they wanted whole circuit consisting the transistors, wires,& everything else
In 1958, Jack S Kilby (Texas In 1959, Rober Noyce (Fair Child
Instruments) showed that it was Semiconductor) demonmstrated an IC
possible to fabricate a simple IC in Made in Silicon using Sio2 as the insulator
Germanium. and AL for the Metallic interconnects
4. More reliable because of elimination of soldered joints and need for fewer inter-
connections.
11. Suitable for small signal operation because of no chance of stray electrical pickup as
various components of an IC are located very close to each other on a silicon wafer
12. No component project above the chip surface in an IC as all the components are
formed within the chip.
THE INTEGRATED CIRCUITS HAVE FEW LIMITATIONS ALSO, AS LISTED BELOW :
In an IC the various components are part of a small semiconductor chip and the individual component or
components cannot be removed or replaced, therefore, if any component in an IC fails, the whole IC has to be
replaced by the new one.
Limited power rating as it is not possible to manufacture high power (say greater than 10 Watt)
Ics
Need of connecting inductors and transformers exterior to the semi-conductor chip as it is not
possible to fabricate inductors and transformers on the semi-conductor chip surface.
Quite delicate in handling as these cannot withstand rough handling or excessive heat.
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Need of connecting capacitor exterior to the semi-conductor chip as it is neither convenient nor economical to fabricate capacitances exceeding 30 pff Therefore, for higher values of capacitance, discrete components exterior to IC chip are connected.
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High grade P-N-P assembly is not possible.
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Low temperature coefficient is difficult to be achieved
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Difficult to fabricate an IC with low noise.
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Large value of saturation resistance of transistors.
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Voltage dependence of resistors and capacitors.
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The diffusion processes and other related procedures used in the fabrication process are not good enough to permit a precise control of the parameter values for the circuit elements. However, control of the ratios is at a sufficiently acceptable level.