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Unit I

The document provides an overview of integrated circuit (IC) technologies including MOS and BiCMOS circuits. It discusses key MOS transistor characteristics such as the IDS-VDS relationship and threshold voltage. It also covers CMOS and NMOS inverters as well as BiCMOS inverters. The document lists textbook references and outlines the course, covering topics like basic electrical properties, transconductance, and IC design analysis.

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0% found this document useful (0 votes)
62 views25 pages

Unit I

The document provides an overview of integrated circuit (IC) technologies including MOS and BiCMOS circuits. It discusses key MOS transistor characteristics such as the IDS-VDS relationship and threshold voltage. It also covers CMOS and NMOS inverters as well as BiCMOS inverters. The document lists textbook references and outlines the course, covering topics like basic electrical properties, transconductance, and IC design analysis.

Uploaded by

Ramarao B
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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UNIT-I

IC Technologies
Introdu Basic Electrical
Properties of MOS
ction and BiCMOS Circuits

IDS - VDS
MOS relationships

MOS transistor
Threshold Voltage - VT
PMOS figure of merit-ω0

Transconducta
nce-gm, gds;
NMOS
Pass
CMOS transistor
& NMOS Inverter, Various
pull ups, CMOS Inverter
analysis and design
Bi-CMOS
Technologi
es Bi-CMOS
Inverters
Course Outline:
TEXT BOOKS:

1. D A Pucknell and K Eshraghian “Basic VLSI Design” – Prentice-Hall, 2006.


2. Kang & Leblebigi “CMOS Digital IC Circuit Analysis & Design”- McGraw Hill, 2003.
3. J M Rabaey, “Digital Integrated Circuits Design”, Pearson Education, Second Edition,
2003.

References:

• N. Weste and K. Eshraghian, “Principles of CMOS VLSI design” Addison-Wesley, 2002.

• Additional reading from selected journals / papers.


Why do We Want to Design VLSI Circuit?
Answer :


Realization of complex circuits using discrete devices are difficult and costly too.

ICs solve this problem by printing all small circuits on single flat surface.

This reduces the cost because cost depends upon die size.

Thus VLSI design manages complexity and helps to simplify the complex design
problems.

It determines efficient solutions in terms of area, power, time and performance.


HISTORICAL OVERVIEW: ERA of ICs

1954, 1st Silicon Transistor, cost $2.50.

1961, 1st IC( FF circuit), cost $50.

1961-1966 : SSI era, 90-150 Tr/C, FF, Gates.

1967-1971 : MSI, 100-1000 Tr/C, Adders, counters and 1K RAM chip by Intel.

1972-1978 : LSI, 1K-20K Tr/C, 4-8bit µPs, ROM.

1978-1988 : VLSI, 20K-500K Tr/C, 16-32bit µPs, sophisticated peripherals.


Technology Trends
Brief History
The Start of the Modern Electronics Era

Bardeen, Shockley, and Brattain at The first germanium bipolar


Bell Labs - Brattain and Bardeen transistor.
invented the bipolar transistor in
1947
Electronics Milestones

1958 Integrated circuits developed by Kilby (TI) and Noyce and Moore
1874 Braun invents the solid-state rectifier (Fairchild Semiconductor)
(using point contact based on lead sulphide)
1961 First commercial IC from Fairchild Semiconductor
1906 DeForest invents triode vacuum
tube. 1963 IEEE formed from merger of IRE and AIEE

1907-1927 First radio circuits developed 1968 First commercial IC opamp


from diodes and triodes.
1970 One transistor DRAM cell invented by Dennard at IBM.
1925 Lilienfeld field-effect device
patent filed. 1971 4004 Intel microprocessor introduced.

1947 Bardeen and Brattain at Bell 1978 First commercial 1-kilobit memory.
Laboratories invent bipolar transistors.
1974 8080 microprocessor introduced.
1952 Commercial bipolar transistor
production at Texas Instruments. 1984 Megabit memory chip introduced.
1956 Bardeen, Brattain, and 1995 Gigabite memory chip presented.
Shockley receive Nobel prize.
Evolution of Electronic Devices

Discrete
Vacuum Transistors
Tubes

SSI and MSI VLSI


Integrated Surface-Mount
Circuits Circuits
Evolution of IC from SSI, MSI, LSI to VLSI

Firstly, between 1961-1965 in SSI (small scale integration) transistors were fabricated
about 10 to 100 on a single chip. This technology is used for making logic gates, flip flops.

In 1966-1970 in MSI (medium scale integration) transistors were fabricated about 100 to
1000 on a single chip. This technology is used for making counters, multiplexers, decoders.

In 1971-1979 in LSI (large scale integration) transistors were fabricated about 1000 to
20000 on a single chip. This technology is used for making microprocessor, RAM, ROM

In 1980-1984 in VLSI (very large scale integration) transistors were fabricated about 20000
to 50000 on a single chip. This technology is used for making DSP (digital signal processing)
IC’s, RISC microprocessor, 16-bit and 32-bit microprocessors.

From 1985- present technology is ULSI (ultra large scale integration), in which transistors
are fabricated about greater than 50000 to billions on a single chip. This technology is used
for making 64-bit microprocessors.
MOORE’S LAW:
HOW TRANSISTOR REQUIREMENT INCREASES WITH TIME
In 1965 Moore’s gave a law, in which he observed the number of transistors in a dense integrated circuit doubles about every year.
Integrated Circuits (IC’s)are popularly known as the Silicon Chip or
Computer chip or Micro Chip
Why the idea for the smaller circuits came ??

Why the idea for the smaller circuits came ??

Actually as the technology starts developing, and the new devices of different
performance and sizes came into being, then the manufacturers felt the need for the
better electronic components.

Although they are using the transistors instead of the vacuum tubes(which are bulky
than the transistors). But still they want something even better.

And they wanted whole circuit consisting the transistors, wires,& everything else
In 1958, Jack S Kilby (Texas In 1959, Rober Noyce (Fair Child
Instruments) showed that it was Semiconductor) demonmstrated an IC
possible to fabricate a simple IC in Made in Silicon using Sio2 as the insulator
Germanium. and AL for the Metallic interconnects

The first planar IC


( actual size: 0.06In. Diameter)
IC’s Based on the size(or the no. of components).

Small scale integration(SSI):-Up to 100 components


Medium scale integration(MSI):-100 –3k component
Large scale integration(LSI):-3k-10k components
Very large scale integration(VLSI):-10k-100k comp.
Ultra large scale integration(ULSI):-more than 1M.
IC’s Based on the Signal types

1)Analog IC’s: Analog ICs, 2)Digital IC’s: Digital


such as sensors, power integrated circuits can contain
anything from one to millions 3)Mixed(Analog +
management circuits, and
of logic gates, flip - flops, Digital) IC’s: ICs can
operational amplifiers, work
by processing continuous
multiplexers, and other circuits also combine analog and
in a few square millimeters. digital circuits on a single
signals. They perform
The small size of these circuits chip to create functions
functions like amplification,
allows high speed, low power
active filtering, demodulation,
dissipation, and reduced
such as A/D converters
and mixing. Analog ICs ease and D/A converters. Such
manufacturing cost compared
the burden on circuit circuits offer smaller size
with board-level integration.
designers by having expertly These digital ICs, typically and lower cost, but must
designed analog circuits microprocessors, DSPs, and
available instead of designing carefully account for
micro controllers, work using
a difficult analog circuit from signal interference.
binary mathematics to process
scratch. "one" and "zero" signals.
THE INTEGRATED CIRCUITS OFFER A NUMBER OF ADVANTAGES OVER THOSE MADE BY
INTERCONNECTING DISCRETE COMPONENTS. THESE ARE SUMMARIZED AS FOLLOWS

1. Extremely small size—thousands times smaller than discrete circuit. It is because of


fabrication of various circuit elements in a single chip of Semi-conductor material

2. Very small weight owing to miniaturized circuit.

3. Very low cost because of simultaneous production of hundreds of similar circuits on a


small semiconductor wafer. Owing to mass production an IC costs as much as an
individual transistor.

4. More reliable because of elimination of soldered joints and need for fewer inter-
connections.

5. Low power consumption because of their smaller size.

6. Easy replacement as it is more economical to replace them than to repair them.


7. Increased operating speeds because of absence of parasitic capacitance effect.

8. Close matching of components and temperature coefficients because of bulk Production


in batches

9. Improved functional performance as more complex circuits can be fabricated for


achieving better characteristics.

10. Greater ability of operating at extreme temperatures.

11. Suitable for small signal operation because of no chance of stray electrical pickup as
various components of an IC are located very close to each other on a silicon wafer

12. No component project above the chip surface in an IC as all the components are
formed within the chip.
THE INTEGRATED CIRCUITS HAVE FEW LIMITATIONS ALSO, AS LISTED BELOW :

In an IC the various components are part of a small semiconductor chip and the individual component or
components cannot be removed or replaced, therefore, if any component in an IC fails, the whole IC has to be
replaced by the new one.

Limited power rating as it is not possible to manufacture high power (say greater than 10 Watt)
Ics

Need of connecting inductors and transformers exterior to the semi-conductor chip as it is not
possible to fabricate inductors and transformers on the semi-conductor chip surface.

Operations at low voltage as ICs function at fairly low voltage

Quite delicate in handling as these cannot withstand rough handling or excessive heat.

t a sufficiently acceptable level.


THE INTEGRATED CIRCUITS HAVE FEW LIMITATIONS ALSO, AS LISTED BELOW :


Need of connecting capacitor exterior to the semi-conductor chip as it is neither convenient nor economical to fabricate capacitances exceeding 30 pff Therefore, for higher values of capacitance, discrete components exterior to IC chip are connected.

High grade P-N-P assembly is not possible.

Low temperature coefficient is difficult to be achieved

Difficult to fabricate an IC with low noise.

Large value of saturation resistance of transistors.

Voltage dependence of resistors and capacitors.

The diffusion processes and other related procedures used in the fabrication process are not good enough to permit a precise control of the parameter values for the circuit elements. However, control of the ratios is at a sufficiently acceptable level.

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